公开(公告)号：US5571578A

公开(公告)日：1996-11-05

申请号：US372325

申请日：1995-01-13

申请人： Naruhiko Kaji ,  Riichirou Aoki ,  Hiroyuki Toyama ,  Hidemitsu Egawa ,  Takamitsu Yoshida ,  Yukio Nishiyama

发明人： Naruhiko Kaji ,  Riichirou Aoki ,  Hiroyuki Toyama ,  Hidemitsu Egawa ,  Takamitsu Yoshida ,  Yukio Nishiyama

IPC分类号： H01L21/205 ,  C23C16/40 ,  C23C16/509 ,  H01L21/31 ,  H01L21/316 ,  H05H1/24

CPC分类号： H01J37/32165 ,  C23C16/402 ,  C23C16/5096 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02362 ,  H01L21/31608

摘要： A plasma CVD device having a chamber, an upper electrode provided in the chamber, an under electrode provided in the chamber to be opposite to the upper electrode and to mount a sample thereon, and a plurality of power sources having a different frequency connected to the upper electrode. Gas is introduced into the chamber of the plasma CVD device, the gas contains at least an organic silicon compound, CF.sub.4 and O.sub.2, and has an element ratio (F/Si) of silicon (Si), constituting the organic silicon compound, to fluorine (F), constituting CF.sub.4, to be set to 15 or more. Si(OC.sub.2 H.sub.5).sub.4 or Si(OCH.sub.3).sub.4 is used as an organic silicon compound.

摘要翻译： 一种等离子体CVD装置，其具有室，设置在室中的上电极，设置在室中的与上电极相对的底电极，并在其上安装样品，以及具有不同频率的多个电源连接到 上电极。 将气体引入到等离子体CVD装置的室中，气体至少含有有机硅化合物CF4和O2，并且构成有机硅化合物的硅（Si）的元素比（F / Si）与氟 （F），构成CF4，设定为15以上。 Si（OC2H5）4或Si（OCH3）4用作有机硅化合物。

公开(公告)号：US07371654B2

公开(公告)日：2008-05-13

申请号：US11395134

申请日：2006-04-03

申请人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

发明人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

摘要翻译： 根据HDP技术，在形成在半导体衬底的表面上或上方的沟槽的内表面上开始形成第一氧化硅膜。 然后，第一氧化硅膜的沉积在沟槽的开口闭合之前停止。 此外，蚀刻沉积在开口附近的第一氧化硅膜，并且根据HDP技术在沉积在沟槽底部的第一氧化硅膜上形成第二氧化硅膜。 以这种方式，第一和第二氧化硅膜可以层压在沟槽的底部。

公开(公告)号：US20060189092A1

公开(公告)日：2006-08-24

申请号：US11395134

申请日：2006-04-03

申请人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

发明人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

IPC分类号： H01L21/76

CPC分类号： H01L21/76224

摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

公开(公告)号：US06798038B2

公开(公告)日：2004-09-28

申请号：US10140941

申请日：2002-05-09

申请人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

发明人： Atsuhiro Sato ,  Masayuki Ichige ,  Seiichi Mori ,  Yuji Takeuchi ,  Hiroaki Hazama ,  Yukio Nishiyama ,  Hirotaka Ogihara ,  Naruhiko Kaji

IPC分类号： H01L2900

CPC分类号： H01L21/76224

摘要： Forming of a first silicon oxide film is started on an internal surface of a trench formed on a surface or upwardly of a semiconductor substrate according to an HDP technique. Then, deposition of the first silicon oxide film stops before an opening of the trench closes. Further, the first silicon oxide film deposited in the vicinity of an opening is etched, and a second silicon oxide film is formed on the first silicon oxide film deposited on the bottom of the trench according to the HDP technique. In this manner, the first and second silicon oxide films can be laminated on the bottom of the trench.

摘要翻译： 根据HDP技术，在形成在半导体衬底的表面上或上方的沟槽的内表面上开始形成第一氧化硅膜。 然后，第一氧化硅膜的沉积在沟槽的开口闭合之前停止。 此外，蚀刻沉积在开口附近的第一氧化硅膜，并且根据HDP技术在沉积在沟槽底部的第一氧化硅膜上形成第二氧化硅膜。 以这种方式，第一和第二氧化硅膜可以层压在沟槽的底部。

公开(公告)号：US6153509A

公开(公告)日：2000-11-28

申请号：US343699

申请日：1999-06-30

申请人： Kei Watanabe ,  Yukio Nishiyama ,  Naruhiko Kaji ,  Hideshi Miyajima

发明人： Kei Watanabe ,  Yukio Nishiyama ,  Naruhiko Kaji ,  Hideshi Miyajima

IPC分类号： H01L21/768 ,  H01L21/38 ,  H01L21/322 ,  H01L21/44

CPC分类号： H01L21/76837 ,  H01L21/76834 ,  Y10S438/963

摘要： In a method of manufacturing a semiconductor device including a semiconductor element formed on a semiconductor substrate, an SiOF film is formed at least on the top surfaces of metal wirings under condition that an in-chamber pressure is 5 mTorr or lower. The SiOF film can thus be buried into a space between the metal wirings without causing any void and the capacitance between the wirings can be prevented from increasing, while preventing the metal wirings from being damaged and preventing the aspect ratio from increasing.

摘要翻译： 在制造半导体元件的半导体器件的制造方法中，在室内压力为5mTorr以下的条件下，至少在金属配线的上表面上形成SiOF膜。 因此，可以将SiOF膜埋入金属配线之间的空间，而不产生任何空隙，并且可以防止布线之间的电容增加，同时防止金属布线被损坏并防止纵横比增加。

公开(公告)号：US5641581A

公开(公告)日：1997-06-24

申请号：US411994

申请日：1995-03-28

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  B32B9/00

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4, P.ltoreq.10.sup.-1.times.10.sup.-E/45( A)and the relationship between the ion energy E (eV) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11.times.10.sup.-E/45, 10 .ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 4，P <= 10-1×10-E / 45（A），离子能E（eV）与等离子体密度D（/ cm 3）之间的关系满足以下公式B：D> / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US5429995A

公开(公告)日：1995-07-04

申请号：US94423

申请日：1993-07-16

申请人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

发明人： Yukio Nishiyama ,  Rempei Nakata ,  Nobuo Hayasaka ,  Haruo Okano ,  Riichirou Aoki ,  Takahito Nagamatsu ,  Akemi Satoh ,  Masao Toyosaki ,  Hitoshi Ito

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/311 ,  H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/31111 ,  H01L21/31625 ,  H01L21/31629 ,  H01L21/76801 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002

摘要： Disclosed is a method of manufacturing a semiconductor device, in which a silicon oxide film containing fluorine, said film exhibiting a low dielectric constant and a low hygroscopicity and acting as an insulating film for electrically isolating wirings included in a semiconductor device, is formed by a plasma CVD method using a source gas containing at least silicon, oxygen and fluorine, under the conditions that the relationship between the gas pressure P (Torr) and the ion energy E (eV) satisfies formula A given below:P.gtoreq.5.times.10.sup.-4,P.ltoreq.10.sup.-1 .times.10.sup.-E/45(A)and the relationship between the ion energy E (ev) and the plasma density D (/cm.sup.3) satisfies the formula B given below:D.gtoreq.2.times.10.sup.11 .times.10.sup.-E/45, 10.ltoreq.E(B)

摘要翻译： 公开了一种制造半导体器件的方法，其中含有氟的氧化硅膜，所述膜具有低介电常数和低吸湿性并且用作用于电绝缘包括在半导体器件中的布线的绝缘膜，其通过 在气体压力P（Torr）和离子能量E（eV）之间的关系满足下面给出的公式A的条件下，使用至少含有硅，氧和氟的源气体的等离子体CVD方法：P> = 5×10- 如图4所示，P / = 2x1011×10-E / 45,10（E）（B）

公开(公告)号：US07052971B2

公开(公告)日：2006-05-30

申请号：US10193143

申请日：2002-07-12

申请人： Yukio Nishiyama ,  Hirotaka Ogihara ,  Rempei Nakata

发明人： Yukio Nishiyama ,  Hirotaka Ogihara ,  Rempei Nakata

IPC分类号： H01L21/762

CPC分类号： H01L21/76802 ,  H01L21/31055 ,  H01L21/3125 ,  H01L21/76224 ,  H01L21/76831 ,  H01L21/76837

摘要： A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion formed in a surface region of a semiconductor workpiece to a position lower than an upper surface of the recess portion, and forming a second silicon oxide film by SOG on the first silicon oxide film so as to fill the recess portion.

公开(公告)号：US4834036A

公开(公告)日：1989-05-30

申请号：US203494

申请日：1988-06-07

申请人： Yukio Nishiyama ,  Junzo Fujioka ,  Haruki Hino ,  Takuya Miyashita

发明人： Yukio Nishiyama ,  Junzo Fujioka ,  Haruki Hino ,  Takuya Miyashita

IPC分类号： B23P15/00 ,  F01L3/02

CPC分类号： F01L3/02 ,  B23P15/002

摘要： A composite follow valve for internal combustion engines such as an intake and an exhaust valve and the method for producing the same are disclosed. The valve is produced by integrating into the whole a valve head portion molded from a lightweight, heat-resistant material selected from a group of titanium alloys and titanium-aluminium alloys, a stem portion molded from a high-strength alloy steel, made hollow inside to reduce weight, and a stem end portion molded from a hard material selected from a group of martensitic stainless steel, silicon nitride and silicon carbide ceramics. Since the different materials of the separate valve components are selected to meet the requirements of their particular functions and operating condition under which they are placed. Also, because of this separate arrangement, the valve can be produced at a relatively reduced cost, since the use of expensive materials is saved. Furthermore, the valve is molded, not in a whole body, but in separate components, there is no use for expensive isothermal forging machines as in the case of prior art production methods.

公开(公告)号：US07446061B2

公开(公告)日：2008-11-04

申请号：US11633484

申请日：2006-12-05

申请人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

发明人： Hiroshi Sato ,  Rempei Nakata ,  Yukio Nishiyama ,  Taketo Matsuda

IPC分类号： H01L21/44 ,  H01L21/31

CPC分类号： H01L21/31612 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625 ,  H01L21/76224 ,  H01L21/76837

摘要： A semiconductor substrate with a groove is placed in a plasma generating reaction chamber. Silicon, oxygen and hydrogen containing gases are introduced into the reaction chamber as process gases. A ratio of a gas flow of the hydrogen containing gas except the silicon containing gas to a total gas flow of the silicon containing gas and the oxygen containing gas defines a first gas-flow ratio. A ratio of a gas flow of the oxygen containing gas to that of the silicon containing gas defines a second gas-flow ratio. The first and second gas-flow ratios establish a linear function for a critical condition. A cluster formation condition is set up by relatively increasing the first gas-flow ratio while relatively decreasing the second gas-flow ratio with respect to the critical condition. A cluster suppression condition is also set up by relatively decreasing the first gas-flow ratio while relatively increasing the second gas-flow ratio with respect to the critical condition. The process gases are supplied to the reaction chamber under the cluster formation condition and under the cluster suppression condition, alternately, to form an insulating film buried in the groove.

摘要翻译： 将具有凹槽的半导体衬底放置在等离子体产生反应室中。 硅，氧和含氢气体作为工艺气体被引入到反应室中。 含硅气体以外的含氢气体的气体流量与含硅气体和含氧气体的总气体流量的比率定义为第一气体流量比。 含氧气体的气体流量与含硅气体的气体流量的比定义第二气体流量比。 第一和第二气体流量比建立了关键条件的线性函数。 通过相对增加第一气体流量比来建立簇形成条件，同时相对于临界条件相对降低第二气体流量比。 通过相对地降低第一气体流量比同时相对于临界条件相对增加第二气体流量比也建立了集束抑制条件。 处理气体在簇形成条件下并在簇抑制条件下交替地供给到反应室，以形成埋在槽中的绝缘膜。