公开(公告)号：US06774465B2

公开(公告)日：2004-08-10

申请号：US10265081

申请日：2002-10-04

申请人： Keun hyuk Lee ,  Ji-hwan Kim ,  Dae-woong Chung ,  O-seob Jeon

发明人： Keun hyuk Lee ,  Ji-hwan Kim ,  Dae-woong Chung ,  O-seob Jeon

IPC分类号： H01L23495

CPC分类号： H01L25/16 ,  H01L23/049 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/165 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/19107 ,  H01L2924/00014

摘要： A semiconductor power module in which a power circuit chip and a control circuit chip are integrated in a package, is provided. The semiconductor power module includes a case; a terminal inserted into the case, the terminal including portions protruding upward to the outside of the case, and portions exposed in the case; a first substrate to which the power circuit chip is attached, the first substrate attached to the case for encapsulating the bottom of the package; a second substrate to which the control circuit chip is attached, the second substrate being spaced from the first substrate at a predetermined interval in a perpendicular direction in the case; and a cover for covering the top of the case, and for encapsulating the top of the package.

摘要翻译： 提供了将电源电路芯片和控制电路芯片集成在封装中的半导体功率模块。 半导体功率模块包括壳体; 插入壳体的端子，端子包括向上突出到壳体外部的部分和暴露在壳体中的部分; 附接有电源电路芯片的第一基板，附接到用于封装封装的底部的壳体的第一基板; 所述第二基板与所述控制电路芯片相连接，所述第二基板在所述壳体中以垂直方向以预定间隔与所述第一基板间隔开; 以及用于覆盖壳体的顶部并且用于封装包装的顶部的盖子。

公开(公告)号：US20100167470A1

公开(公告)日：2010-07-01

申请号：US12702615

申请日：2010-02-09

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L21/56 ,  H01L21/60

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US07701048B2

公开(公告)日：2010-04-20

申请号：US11743829

申请日：2007-05-03

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L23/52

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US07951645B2

公开(公告)日：2011-05-31

申请号：US12702615

申请日：2010-02-09

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L21/44

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US20070257351A1

公开(公告)日：2007-11-08

申请号：US11743829

申请日：2007-05-03

申请人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

发明人： Keun-hyuk Lee ,  O-seob Jeon ,  Seung-won Lim

IPC分类号： H01L23/24

CPC分类号： H01L23/3735 ,  H01L21/565 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/32225 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1815 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00

摘要： A power module with low thermal resistance buffers the stress put on a substrate during a package molding operation to virtually always prevent a fault in the substrate of the module. The power module includes a substrate, a conductive adhesive layer formed on the substrate, a device layer comprising a support tab, a power device, and a passive device which are formed on the conductive adhesive layer, and a sealing material hermetically sealing the device layer. The support tab is buffers the stress applied by a support pin to the substrate, thereby virtually always preventing a ceramic layer included in the substrate from cracking or breaking. As a result, a reduction in the isolation breakdown voltage of the substrate is virtually always prevented and the failure of the entire power module is do to a reduction in the breakdown voltage of the substrate is virtually always prevented.

摘要翻译： 具有低热阻的功率模块缓冲在封装成型操作期间施加在基板上的应力，几乎总是防止模块的衬底中的故障。 功率模块包括基板，形成在基板上的导电粘合剂层，形成在导电粘合剂层上的支撑突片，功率器件和无源器件的器件层，以及密封材料密封器件层 。 支撑片缓冲由支撑销施加到基板上的应力，从而实际上总是防止包含在基板中的陶瓷层破裂或断裂。 结果，实际上总是防止基板的隔离击穿电压的降低，并且实际上总是防止整个电源模块的故障，以致基板的击穿电压的降低。

公开(公告)号：US06710439B2

公开(公告)日：2004-03-23

申请号：US10244101

申请日：2002-09-12

申请人： Keun-hyuk Lee ,  Gi-Young Jeun ,  O-seob Jeon

发明人： Keun-hyuk Lee ,  Gi-Young Jeun ,  O-seob Jeon

IPC分类号： H01L2352

CPC分类号： H01L25/165 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48096 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/484 ,  H01L2224/4911 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power semiconductor module in which a main circuit terminal lead frame part and a control circuit lead frame part are bent toward a main circuit lead frame part, is provided. The power semiconductor module includes a main circuit part; a control circuit part and a control circuit terminal which are placed along a plane perpendicular to the main circuit part; a main circuit terminal placed along another plane perpendicular to the main circuit part, facing the control circuit part the control circuit terminal; a bonding wire; and a mold compound. Accordingly, it is possible to realize a light and compact intelligent power module that is simple to manufactured at a low cost.

摘要翻译： 提供了主电路端子引线框架部分和控制电路引线框架部分朝向主电路引线框架部分弯曲的功率半导体模块。 功率半导体模块包括主电路部分; 控制电路部分和控制电路端子，其沿垂直于主电路部分的平面放置; 主电路端子沿垂直于主电路部分的另一平面放置，面向控制电路部分的控制电路端子; 接合线; 和模具化合物。 因此，可以实现以低成本制造简单的轻巧紧凑的智能电力模块。

公开(公告)号：US07687903B2

公开(公告)日：2010-03-30

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H01L23/34

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20090194859A1

公开(公告)日：2009-08-06

申请号：US12358566

申请日：2009-01-23

申请人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

发明人： In-goo Kang ,  O-seob Jeon ,  Joon-seo Son

IPC分类号： H01L23/495 ,  H01L21/71

CPC分类号： H01L23/49575 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49586 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/371 ,  H01L2224/37124 ,  H01L2224/37144 ,  H01L2224/37147 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13034 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00014 ,  H01L2924/00

摘要： Provided is a semiconductor package having a power device and methods of fabricating the same. The semiconductor package includes a lead frame, a polymer layer component on the lead frame, a metal layer component on the polymer layer component, and a semiconductor chip on the metal layer component. The polymer layer component may include a material formed by adding alumina Al2O3 an aluminum nitride (AlN), or a boron nitride BN to an epoxy resin. The polymer layer component may have high thermal conductivity and good electric insulating characteristics.

摘要翻译： 提供了具有功率器件的半导体封装及其制造方法。 半导体封装包括引线框架，引线框架上的聚合物层部件，聚合物层部件上的金属层部件和金属层部件上的半导体芯片。 聚合物层组分可以包括通过将氧化铝Al 2 O 3添加到氮化铝（AlN）或氮化硼BN至环氧树脂而形成的材料。 聚合物层组分可具有高导热性和良好的电绝缘特性。

公开(公告)号：US20090129028A1

公开(公告)日：2009-05-21

申请号：US12220638

申请日：2008-07-24

申请人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

发明人： Joon-seo Son ,  Seung-won Lim ,  O-seob Jeon

IPC分类号： H05K7/20 ,  H01L23/34 ,  H01L21/00

CPC分类号： H01L23/49551 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/4951 ,  H01L23/49572 ,  H01L23/49575 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/165 ,  H01L2224/16245 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48095 ,  H01L2224/48247 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1532 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Provided are a power module including a power package and a control package that are provided separately and can be highly integrated, and method of fabricating the power module. The power module includes: a molded power package including at least one power device on a first lead frame; and a molded control package vertically stacked on the power package, and including at least one control device on a second lead frame. A first part of the first lead frame and a first part of the second lead frame are coupled to each other so that the power package and the control package can be electrically coupled to each other.

摘要翻译： 提供了一种功率模块，其包括单独提供并且可以高度集成的功率封装和控制封装以及制造功率模块的方法。 功率模块包括：模制功率封装，其包括在第一引线框架上的至少一个功率器件; 以及垂直堆叠在所述功率封装上的模制控制组件，并且在第二引线框架上包括至少一个控制装置。 第一引线框架的第一部分和第二引线框架的第一部分彼此耦合，使得功率封装和控制封装可以彼此电耦合。

公开(公告)号：US20050104168A1

公开(公告)日：2005-05-19

申请号：US10987550

申请日：2004-11-12

申请人： Yoon-hwa Choi ,  Shi-baek Nam ,  O-seob Jeon ,  Rajeev Joshi ,  Maria Estacio

发明人： Yoon-hwa Choi ,  Shi-baek Nam ,  O-seob Jeon ,  Rajeev Joshi ,  Maria Estacio

IPC分类号： H01L23/31 ,  H01L23/433 ,  H01L23/495

CPC分类号： H01L23/4334 ,  H01L23/3107 ,  H01L23/315 ,  H01L23/49568 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Provided are a molded leadless package, and a sawing type molded leadless package and method of manufacturing same. The molded leadless package includes a lead frame pad having first and second surfaces opposite to each other. A semiconductor chip is adhered to the first surface of the lead frame pad. A lead is electrically coupled to the semiconductor chip. A molding material covers the lead frame pad, the semiconductor chip, and the lead and exposes a portion of the lead and a portion of the second surface of the lead frame pad. A step difference is formed between a surface of the molding material covering the second surface of the lead frame pad and the second surface of the lead frame pad itself. The sawing type molded leadless package includes a short-circuit preventing member that is post-shaped or convex, and protruding from the lower surface of the die pad.

摘要翻译： 提供了一种模制无引线封装和锯切型模制无引线封装及其制造方法。 模制的无引线封装包括具有彼此相对的第一和第二表面的引线框架焊盘。 半导体芯片粘附到引线框架焊盘的第一表面。 引线电耦合到半导体芯片。 模制材料覆盖引线框架焊盘，半导体芯片和引线，并且暴露引线的一部分和引线框架焊盘的第二表面的一部分。 在覆盖引线框架焊盘的第二表面的成型材料的表面与引线框架焊盘本身的第二表面之间形成台阶差。 锯切型成型无引线封装包括后形状或凸形并从管芯焊盘的下表面突出的防短路部件。