摘要:
A partial data changing method of a memory controller includes receiving a request to change partial data from a host; detecting an error of old data, the old data being partial data read from a memory device using an error detection code; if the old data is not erroneous, calculating a data difference between new data provided from the host and the old data, and calculating a new parity using the data difference and an old parity read from the memory device; and storing the new data and the new parity at the memory device.
摘要:
A method of iteratively decoding data transferred through a channel is provided. The method may include iteratively decoding each sector of 1 to N sectors of the data in continuous succession until all N sectors are decoded, wherein upon determination of successful completion of iterative decoding corresponding to a current sector of the N sectors, immediately initiating iterative decoding a next sector of the N sectors.
摘要:
A method of iteratively decoding data transferred through a channel is provided. The method may include iteratively decoding each sector of 1 to N sectors of the data in continuous succession until all N sectors are decoded, wherein upon determination of successful completion of iterative decoding corresponding to a current sector of the N sectors, immediately initiating iterative decoding a next sector of the N sectors.
摘要:
A storage device may include a nonvolatile memory device, a buffer memory, and a controller. The controller may perform first accesses on the nonvolatile memory device using the buffer memory, collect access result information and access environment information of the first accesses in the buffer memory, and generate an access classifier that predicts a result of a second access to the nonvolatile memory device by performing machine learning based on the access result information and the access environment information collected in the buffer memory.
摘要:
A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.
摘要:
A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state.
摘要:
A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要:
An operating method is for a storage device that includes a nonvolatile memory and a memory controller configured to control the nonvolatile memory. The operating method may include the memory controller receiving a read request from an external device, the memory controller adjusting a read scheme according to target data indicated by the read request among data of one page of the nonvolatile memory, and the memory controller reading the target data from the nonvolatile memory according to the adjusted read scheme.
摘要:
A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.
摘要:
A memory system includes: a bit counter and a regression analyzer. The bit counter is configured to generate a plurality of count values based on data read from selected memory cells using a plurality of different read voltages, each of the plurality of count values being indicative of a number of memory cells of a memory device having threshold voltages between pairs of the plurality of different read voltages. The regression analyzer is configured to determine read voltage for the selected memory cells based on the plurality of count values using regression analysis.