MEMORY SYSTEM WITH PAGE-BASED ITERATIVE DECODING STRUCTURE AND PAGE-BASED ITERATIVE DECODING METHOD THEREOF
    2.
    发明申请
    MEMORY SYSTEM WITH PAGE-BASED ITERATIVE DECODING STRUCTURE AND PAGE-BASED ITERATIVE DECODING METHOD THEREOF 有权
    具有基于页面的迭代解码结构的存储器系统和基于页面的迭代解码方法

    公开(公告)号:US20110289384A1

    公开(公告)日:2011-11-24

    申请号:US13110395

    申请日:2011-05-18

    IPC分类号: H03M13/05 G06F11/10 G06F12/00

    摘要: A method of iteratively decoding data transferred through a channel is provided. The method may include iteratively decoding each sector of 1 to N sectors of the data in continuous succession until all N sectors are decoded, wherein upon determination of successful completion of iterative decoding corresponding to a current sector of the N sectors, immediately initiating iterative decoding a next sector of the N sectors.

    摘要翻译: 提供了一种迭代地解码通过信道传送的数据的方法。 该方法可以包括以连续顺序迭代地解码数据的1至N个扇区的每个扇区,直到所有N个扇区被解码,其中在确定对应于N个扇区的当前扇区的迭代解码的成功完成时,立即启动迭代解码 N部门的下一个部门。

    Memory system with page-based iterative decoding structure and page-based iterative decoding method thereof
    3.
    发明授权
    Memory system with page-based iterative decoding structure and page-based iterative decoding method thereof 有权
    具有基于页面的迭代解码结构和基于页面的迭代解码方法的存储器系统

    公开(公告)号:US08635512B2

    公开(公告)日:2014-01-21

    申请号:US13110395

    申请日:2011-05-18

    摘要: A method of iteratively decoding data transferred through a channel is provided. The method may include iteratively decoding each sector of 1 to N sectors of the data in continuous succession until all N sectors are decoded, wherein upon determination of successful completion of iterative decoding corresponding to a current sector of the N sectors, immediately initiating iterative decoding a next sector of the N sectors.

    摘要翻译: 提供了一种迭代地解码通过信道传送的数据的方法。 该方法可以包括以连续顺序迭代地解码数据的1至N个扇区的每个扇区,直到所有N个扇区被解码,其中在确定对应于N个扇区的当前扇区的迭代解码的成功完成时,立即启动迭代解码 N部门的下一个部门。

    Method of operating a memory system having an erase control unit
    5.
    发明授权
    Method of operating a memory system having an erase control unit 有权
    一种具有擦除控制单元的存储系统的操作方法

    公开(公告)号:US09437310B2

    公开(公告)日:2016-09-06

    申请号:US14827930

    申请日:2015-08-17

    摘要: A method of operating a memory system including a nonvolatile memory including a memory block, and a memory controller including an erase control unit, includes performing pre-reading a plurality of memory cells connected to a selected word line of the memory block, generating an off cell count based on the pre-reading result, by operation of the erase control unit, comparing the off cell count with a reference value to generate a comparison result, and changing an erase operation condition based on the comparison result, by operation of the nonvolatile memory, and erasing the memory block according to the changed erase operation condition.

    摘要翻译: 一种操作包括包括存储器块的非易失性存储器的存储器系统的方法和包括擦除控制单元的存储器控​​制器,包括执行预读取连接到所述存储器块的选定字线的多个存储器单元,产生关断 基于预读取结果的单元计数,通过擦除控制单元的操作,将关闭单元计数与参考值进行比较以产生比较结果,以及通过非易失性存储器的操作来改变基于比较结果的擦除操作条件 存储器,并根据改变的擦除操作条件擦除存储器块。

    Non-volatile random access memory device and data read method thereof
    6.
    发明授权
    Non-volatile random access memory device and data read method thereof 有权
    非易失性随机存取存储器件及其数据读取方法

    公开(公告)号:US09093145B2

    公开(公告)日:2015-07-28

    申请号:US14141609

    申请日:2013-12-27

    IPC分类号: G11C7/00 G11C13/00

    摘要: A nonvolatile random access memory device includes a plurality of memory cells configured to store data therein, a plurality of reference cells separate from the memory cells, the reference cells each configured to output a corresponding reference cell signal, and a read/write circuit. The read/write circuit is configured to generate from the reference cell signals a reference signal which is variable to have a plurality of different reference levels. The read/write circuit is further configured to identify, in response to the reference signal, a logic state among a first logic state and a second logic state for each of one or more selected memory cells, and to output read data corresponding to the identified logic state.

    摘要翻译: 非易失性随机存取存储器件包括多个存储器单元,其被配置为在其中存储数据,多个参考单元与存储器单元分离,每个参考单元被配置为输出相应的参考单元信号,以及读/写电路。 读/写电路被配置为从参考单元信号产生可变为具有多个不同参考电平的参考信号。 读/写电路还被配置为响应于参考信号识别一个或多个所选择的存储器单元中的每一个的第一逻辑状态和第二逻辑状态之间的逻辑状态,并且输出与所识别的对应的读取数据 逻辑状态。

    Encoding program data based on data stored in memory cells to be programmed
    9.
    发明授权
    Encoding program data based on data stored in memory cells to be programmed 有权
    根据存储在要编程的存储单元中的数据编码程序数据

    公开(公告)号:US09183138B2

    公开(公告)日:2015-11-10

    申请号:US14053893

    申请日:2013-10-15

    IPC分类号: G06F12/02 G11C16/10 G11C13/00

    摘要: A method of programming data in a nonvolatile memory device comprises receiving program data to be programmed in selected memory cells of the nonvolatile memory device, reading data from the selected memory cells, encoding the program data using at least one encoding scheme selected from among multiple encoding schemes according to a comparison of the program data and the read data, generating flag data including encoding information, and programming the encoded program data and the flag data in the selected memory cells.

    摘要翻译: 一种在非易失性存储器件中编程数据的方法包括:接收要在非易失性存储器件的选定存储器单元中编程的程序数据,从所选择的存储器单元读取数据,使用从多个编码中选择的至少一种编码方案对程序数据进行编码 根据程序数据和读取数据的比较,生成包括编码信息的标志数据,以及对选择的存储单元中的编码程序数据和标志数据进行编程的方案。

    Semiconductor memory systems using regression analysis and read methods thereof
    10.
    发明授权
    Semiconductor memory systems using regression analysis and read methods thereof 有权
    使用回归分析及其读取方法的半导体存储器系统

    公开(公告)号:US09111626B2

    公开(公告)日:2015-08-18

    申请号:US14062092

    申请日:2013-10-24

    摘要: A memory system includes: a bit counter and a regression analyzer. The bit counter is configured to generate a plurality of count values based on data read from selected memory cells using a plurality of different read voltages, each of the plurality of count values being indicative of a number of memory cells of a memory device having threshold voltages between pairs of the plurality of different read voltages. The regression analyzer is configured to determine read voltage for the selected memory cells based on the plurality of count values using regression analysis.

    摘要翻译: 存储器系统包括:位计数器和回归分析器。 位计数器被配置为基于使用多个不同的读取电压从所选择的存储器单元读取的数据生成多个计数值,多个计数值中的每一个表示具有阈值电压的存储器件的存储单元的数量 在多个不同读取电压的对之间。 回归分析器被配置为使用回归分析来基于多个计数值来确定所选择的存储器单元的读取电压。