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    METHOD OF FORMING PATTERN
    6.
    发明申请
    METHOD OF FORMING PATTERN 有权
    形成图案的方法

    公开(公告)号：US20120244474A1

    公开(公告)日：2012-09-27

    申请号：US13430185

    申请日：2012-03-26

    申请人： Koji ASAKAWA ,  Shigeki Hattori ,  Ryota Kitagawa

    发明人： Koji ASAKAWA ,  Shigeki Hattori ,  Ryota Kitagawa

    IPC分类号： G03F7/20

    CPC分类号： G03F7/16 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0392

    摘要： According to one embodiment, a method of forming a pattern includes applying a block copolymer to a substrate, the block copolymer including a first block and a second block, the first block including polyacrylate or polymethacrylate having a side chain to which an alicyclic hydrocarbon group or a hydrocarbon group including a tertiary carbon is introduced, and the second block including polystyrene substituted with hydrocarbon or halogen at an α-position, causing the block copolymer to be phase-separated, irradiating the block copolymer with an energy beam to decompose the second block, and removing the second block with a developer to form a pattern of the first block.

    摘要翻译： 根据一个实施方案，形成图案的方法包括将嵌段共聚物施加到基材上，所述嵌段共聚物包括第一嵌段和第二嵌段，所述第一嵌段包括聚丙烯酸酯或聚甲基丙烯酸酯，所述侧链具有脂环族烃基或 导入包含叔碳的烃基，第二嵌段包括在α-位被烃或卤素取代的聚苯乙烯，使嵌段共聚物相分离，用能量束照射嵌段共聚物以分解第二嵌段 并且用显影剂移除第二块以形成第一块的图案。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20120223348A1

    公开(公告)日：2012-09-06

    申请号：US13221319

    申请日：2011-08-30

    申请人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

    发明人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

    IPC分类号： H01L33/60

    CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

    摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

    摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF 审中-公开
    半导体发光元件及其生产工艺

    公开(公告)号：US20100220757A1

    公开(公告)日：2010-09-02

    申请号：US12717750

    申请日：2010-03-04

    申请人： Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA

    发明人： Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA

    IPC分类号： H01S5/02 ,  H01L33/10 ,  H01L33/00 ,  H01L33/44

    CPC分类号： H01L33/22 ,  H01L33/005 ,  H01S5/187

    摘要： One embodiment of the present invention provides a semiconductor light-emitting element having both high light-extraction efficiency and excellent adhesion between a light-extraction surface and a sealing resin, and it also provides a process for production thereof. This element comprises a semiconductor multilayered film and a light-extraction surface. In the multilayered film, plural semiconductor layers and an active layer are stacked. The light-extraction surface is provided on the multilayered film, and plural micro-projections are formed thereon. These micro-projections have flat top faces parallel to the multilayered film, and they can be formed by an etching process. The etching process is performed by use of a dot pattern as a mask, and the dot pattern is formed by phase separation of a block copolymer.

    摘要翻译： 本发明的一个实施方案提供了一种半导体发光元件，其具有高的光提取效率和光提取表面与密封树脂之间的优异粘附性，并且还提供了其生产方法。 该元件包括半导体多层膜和光提取表面。 在多层膜中堆叠多个半导体层和有源层。 在多层膜上设置光提取面，在其上形成有多个微突起。 这些微型突起具有与多层膜平行的平坦顶面，并且它们可以通过蚀刻工艺形成。 通过使用点阵图案作为掩模进行蚀刻处理，并且通过嵌段共聚物的相分离形成点图案。

    LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE
    10.
    发明申请
    LIGHT-TRANSMITTING METAL ELECTRODE, ELECTRONIC APPARATUS AND LIGHT EMITTING DEVICE 有权
    光发射金属电极，电子装置和发光装置

    公开(公告)号：US20130075778A1

    公开(公告)日：2013-03-28

    申请号：US13407291

    申请日：2012-02-28

    申请人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

    发明人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

    IPC分类号： H01L33/40 ,  H01B5/00 ,  B82Y99/00

    CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

    摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

    摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。