公开(公告)号：US20140256061A1

公开(公告)日：2014-09-11

申请号：US13214107

申请日：2011-08-19

申请人： Krishnakumar Mani ,  Benjamin Chen

发明人： Krishnakumar Mani ,  Benjamin Chen

IPC分类号： H01L43/12

CPC分类号： H01L27/222 ,  H01L22/26 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A method for fabricating a magnetic film structure is provided. The method comprises forming a magnetic structure on a bottom electrode layer, the magnetic structure comprising at least one pinned bottom magnetic film layer having a fixed magnetic orientation; at least one top magnetic film layer whose magnetic orientation can be manipulated by a current; and a tunneling layer between the bottom magnetic film layer and the top magnetic film layer; forming a metallic hard mask atop the magnetic structure; patterning and etching the metallic hard mask to define exposed areas of the magnetic structure; selectively etching the exposed areas of the magnetic structure by a chemical etch process based on a CO etch chemistry to form discrete magnetic bits.

摘要翻译： 提供一种制造磁性膜结构的方法。 该方法包括在底部电极层上形成磁性结构，所述磁性结构包括至少一个具有固定磁性取向的固定底部磁性薄膜层; 至少一个磁性取向可由电流操纵的顶部磁性膜层; 以及在底部磁性膜层和顶部磁性膜层之间的隧道层; 在磁性结构上形成金属硬掩模; 图案化和蚀刻金属硬掩模以限定磁结构的暴露区域; 通过基于CO蚀刻化学的化学蚀刻工艺来选择性地蚀刻磁性结构的暴露区域以形成离散磁性位。

公开(公告)号：US09105569B2

公开(公告)日：2015-08-11

申请号：US13214107

申请日：2011-08-19

申请人： Krishnakumar Mani ,  Benjamin Chen

发明人： Krishnakumar Mani ,  Benjamin Chen

IPC分类号： H01L43/12 ,  H01L27/22

CPC分类号： H01L27/222 ,  H01L22/26 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： A method for fabricating a magnetic film structure is provided. The method comprises forming a magnetic structure on a bottom electrode layer, the magnetic structure comprising at least one pinned bottom magnetic film layer having a fixed magnetic orientation; at least one top magnetic film layer whose magnetic orientation can be manipulated by a current; and a tunneling layer between the bottom magnetic film layer and the top magnetic film layer; forming a metallic hard mask atop the magnetic structure; patterning and etching the metallic hard mask to define exposed areas of the magnetic structure; selectively etching the exposed areas of the magnetic structure by a chemical etch process based on a CO etch chemistry to form discrete magnetic bits.

摘要翻译： 提供一种制造磁性膜结构的方法。 该方法包括在底部电极层上形成磁性结构，所述磁性结构包括至少一个具有固定磁性取向的固定底部磁性薄膜层; 至少一个磁性取向可由电流操纵的顶部磁性膜层; 以及在底部磁性膜层和顶部磁性膜层之间的隧道层; 在磁性结构上形成金属硬掩模; 图案化和蚀刻金属硬掩模以限定磁结构的暴露区域; 通过基于CO蚀刻化学的化学蚀刻工艺来选择性地蚀刻磁性结构的暴露区域以形成离散磁性位。

公开(公告)号：US09713203B2

公开(公告)日：2017-07-18

申请号：US13424337

申请日：2012-03-19

申请人： Krishnakumar Mani

发明人： Krishnakumar Mani

IPC分类号： H05B6/10 ,  H01L21/67

CPC分类号： H05B6/10 ,  H01L21/67109 ,  H01L21/6719

摘要： In one embodiment of the invention, there is provided a tool for annealing a magnetic stack. The tool includes a housing defining a heating chamber; a holding mechanism to hold at least one wafer in a single line within the heating chamber, a heating mechanism to heat the at least one wafer; and a magnetic field generator to generate a magnetic field whose field lines pass through the single line of wafers during a magnetic annealing process; wherein the holding mechanism comprises a wafer support of holding the single line of wafers between the heating mechanism and the magnetic field generator. The tool may be a rapid thermal processor retrofitted with the magnetic field generator.

公开(公告)号：US09047963B2

公开(公告)日：2015-06-02

申请号：US12202429

申请日：2008-09-01

申请人： Krishnakumar Mani

发明人： Krishnakumar Mani

IPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C13/02

CPC分类号： G11C11/16 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C13/025 ,  G11C2213/81

摘要： A novel magnetic memory cell utilizing nanotubes as conducting leads. The magnetic memory cell may be built based on MTJ (Magnetic Tunnel Junction) or GMR (Giant Magneto Resistance) sensors or devices of similar nature. A SET (Single Electron Transistor) made of semiconducting nanotubes may be used as access devices and/or to build peripheral circuitry.

摘要翻译： 一种利用纳米管作为导线的新型磁记忆体。 磁存储单元可以基于MTJ（磁隧道结）或GMR（巨磁阻）传感器或类似性质的装置来构建。 可以使用由半导体纳米管制成的SET（单电子晶体管）作为存取装置和/或构建外围电路。

公开(公告)号：US20150055410A1

公开(公告)日：2015-02-26

申请号：US13153471

申请日：2011-06-06

申请人： Krishnakumar Mani

发明人： Krishnakumar Mani

IPC分类号： G11C11/14

CPC分类号： G11C11/14 ,  G11C7/14 ,  G11C7/24 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1695 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

摘要： Memory circuit and method for at least partially dissipating an external magnetic field before the magnetic field affects operation of an array of addressable magnetic storage element stacks in the memory circuit. Multiple dummy magnetic storage element stacks are provided around the periphery of the array. Each of the dummy stacks is substantially circular for orienting along the external magnetic field, thereby causing the dissipation. Each of the addressable and the dummy stacks may be formed with a magnetic tunnel junction (MTJ).

摘要翻译： 用于在磁场影响存储器电路中的可寻址磁存储元件堆阵列的操作之前至少部分耗散外部磁场的存储器电路和方法。 围绕阵列周边设置多个虚拟磁存储元件堆叠。 每个虚拟堆叠基本上是圆形的，用于沿着外部磁场定向，从而导致耗散。 可寻址和虚拟堆叠中的每一个可以形成有磁性隧道结（MTJ）。

公开(公告)号：US20150021724A1

公开(公告)日：2015-01-22

申请号：US13444805

申请日：2012-04-11

申请人： Krishnakumar Mani

发明人： Krishnakumar Mani

IPC分类号： H01L43/02

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08

摘要： Embodiments of the invention disclose magnetic memory cell configurations in which a magnetic storage structure is coupled to an upper metal layer with minimal overlay margin. This greatly reduces a size of the memory cell.

摘要翻译： 本发明的实施例公开了磁存储单元配置，其中磁存储结构以最小的覆盖裕度耦合到上金属层。 这大大减小了存储单元的大小。

公开(公告)号：US07894252B2

公开(公告)日：2011-02-22

申请号：US12690049

申请日：2010-01-19

申请人： Krishnakumar Mani

发明人： Krishnakumar Mani

IPC分类号： G11C11/00

CPC分类号： G01R33/091 ,  G11C11/161 ,  G11C11/1657 ,  G11C11/1659 ,  G11C11/1673

摘要： A magnetic memory cell in which a sensor is magnetically coupled to a magnetic media wherein the separation of the magnetic media from the sensor permits each to be magnetically optimized separate from the other, thus improving defect tolerance and minimizing the magnetic influence of neighboring cells in an array on one another. In an embodiment, the read circuitry is positioned so that no read current passes through the media during a read operation. In an alternative embodiment, processing is simplified but the read current is allowed to pass through the media.

摘要翻译： 一种磁性存储单元，其中传感器磁耦合到磁介质，其中磁介质与传感器的分离允许每个磁性介质与其他磁体分离，从而提高缺陷容限并最小化邻近单元的磁影响 阵列在另一个。 在一个实施例中，读取电路被定位成使得在读取操作期间没有读取电流通过介质。 在替代实施例中，简化了处理，但允许读取电流通过介质。

公开(公告)号：US20100220524A1

公开(公告)日：2010-09-02

申请号：US12714401

申请日：2010-02-26

申请人： Krishnakumar Mani ,  Jannier Maximo Roiz Wilson ,  Kimihiro Satoh

发明人： Krishnakumar Mani ,  Jannier Maximo Roiz Wilson ,  Kimihiro Satoh

IPC分类号： G11C11/14 ,  H01L21/00

CPC分类号： H01L27/222 ,  G11C11/1659 ,  G11C11/1675

摘要： Disclosed is a nonvolatile magnetic memory cell, comprising: a) a switchable magnetic element; b) a word line and a bit line to energize the switchable magnetic element; and c) a magnetic field boosting material positioned adjacent to at least one of the word line and the bit line to boost a magnetic field generated by current flowing therein.

摘要翻译： 公开了一种非易失性磁存储单元，包括：a）可切换磁性元件; b）字线和位线，以激励可切换的磁性元件; 以及c）与所述字线和所述位线中的至少一个相邻定位的磁场增强材料，以增加在其中流动的电流产生的磁场。

公开(公告)号：US20090141542A1

公开(公告)日：2009-06-04

申请号：US11949693

申请日：2007-12-03

申请人： Krishnakumar Mani ,  Jannier Maximo Roiz Wilson ,  Anil Gupta ,  Kimihiro Satoh

发明人： Krishnakumar Mani ,  Jannier Maximo Roiz Wilson ,  Anil Gupta ,  Kimihiro Satoh

IPC分类号： G11C11/02

CPC分类号： G11C11/15 ,  G11C7/18 ,  Y10S977/935

摘要： Embodiments of the present invention disclose an MRAM device having a plurality of magnetic memory cells grouped into words, and write conductors for carrying write currents to write to the memory cells, wherein at least some of the write conductors have a reduced cross-sectional area in the vicinity of a group of memory cells.

摘要翻译： 本发明的实施例公开了一种具有分组成多个磁存储器单元的MRAM器件和用于承载写入电流以写入存储器单元的写导体，其中写入导体中的至少一些具有减小的横截面积 一组存储单元的附近。

公开(公告)号：US09395410B2

公开(公告)日：2016-07-19

申请号：US13153472

申请日：2011-06-06

申请人： Krishnakumar Mani

发明人： Krishnakumar Mani

IPC分类号： G01R27/08 ,  G01R31/28 ,  G01R31/30 ,  G11C5/00 ,  H01F1/00 ,  H01L21/00

CPC分类号： G01R31/2884 ,  G01R31/3004 ,  G11C5/00 ,  G11C5/005 ,  G11C11/1673 ,  G11C11/1677 ,  G11C29/50008 ,  G11C29/52 ,  H01F1/00 ,  H01L21/00

摘要： Integrated circuit comprising a sensing unit that includes a sensing circuit, two conductors and a magnetic storage element. The sensing circuit monitors a voltage drop across the element when a current is passed between the conductors with the element in between. The voltage drop is pre-calibrated to indicate a change in conductivity in the element that is caused by an external magnetic field. Advantageously, this indication is usable particularly for assessing a possible data corruption in a magnetic memory circuit in the integrated circuit, due to stray and external magnetic fields. Methods of using the sensing unit are also proposed.

摘要翻译： 集成电路包括感测单元，其包括感测电路，两个导体和磁存储元件。 当电流在导体之间通过元件之间时，感测电路监测元件两端的电压降。 电压降被预校准，以指示由外部磁场引起的元件中的电导率的变化。 有利地，该指示特别用于评估由于杂散和外部磁场而导致的集成电路中的磁存储器电路中可能的数据损坏。 还提出了使用感测单元的方法。