摘要:
A charged particle beam apparatus is provided with a parameter adjustment practice function for allowing any user to easily learn manual focus adjustment and stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.
摘要:
In recent years, a range of users for a charged particle beam apparatus such as a scanning electron microscope has been broadened. All users want to learn a manual adjustment technology, but it is very difficult to adjust all parameters for observation to have an appropriate value. Therefore, a beginner is unlikely to sufficiently show a performance of an apparatus. This disclosure aims to provide the charged particle beam apparatus including a parameter adjustment practice function for allowing any user to easily learn the manual adjustment technology.In order to solve the above-described problem, there is provided means for practicing a focus adjustment and a stigma adjustment. Control conditions of the focus arrangement of an objective lens, an X-stigmator and a Y-stigmator are set according to the user's operation. According to a group of the focus adjustment, an X-stigma adjustment and a Y-stigma adjustment which are set, a practice-purpose image corresponding to the control conditions is read out from a storage device and is displayed on a screen.
摘要:
Disclosed herein is a scanning electron microscope having a function for positioning an object point of an objective lens at a defined position even under an electronic optical condition in which it is difficult to accurately control the position of the object point of the objective lens. A deflector is provided to deflect an electron beam in order to detect the object point and located at a desired position of the object point of the objective lens. The deflector is not used to scan a sample with the electron beam. The scanning electron microscope has a function for automatically adjusting the position of the object point to ensure that the object point of the objective lens is located at the position of the object point detection deflector by using a characteristic in which a displacement of an image by the deflector is minimal when the object point is located at the position of the deflector.
摘要:
Disclosed herein is a scanning electron microscope having a function for positioning an object point of an objective lens at a defined position even under an electronic optical condition in which it is difficult to accurately control the position of the object point of the objective lens. A deflector is provided to deflect an electron beam in order to detect the object point and located at a desired position of the object point of the objective lens. The deflector is not used to scan a sample with the electron beam. The scanning electron microscope has a function for automatically adjusting the position of the object point to ensure that the object point of the objective lens is located at the position of the object point detection deflector by using a characteristic in which a displacement of an image by the deflector is minimal when the object point is located at the position of the deflector.
摘要:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.
摘要:
This invention provides an organic thin film transistor, which can realize the modification of the surface of a gate insulating layer not only the case where the gate insulating layer is formed of an oxide, but also the case where the gate insulating layer is formed of a material other than the oxide and consequently can significantly improve transistor characteristics, and a method for surface modification of a gate insulating layer in the organic thin film transistor. In an organic thin film transistor comprising a gate insulating layer, an organic semiconductor layer stacked on the gate insulating layer, and an electrode provided on the organic semiconductor layer, a polyparaxylylene layer formed of a continuous polyparaxylylene film is formed on the surface of the gate insulating layer, between the gate insulating layer and the organic semiconductor layer, so as to face and contact with the organic semiconductor layer.
摘要:
Provided is an element which is formed of a conductor composed of a monocrystalline organic compound. Employed is an element including a pair of electrodes with a gap of 10 to 900 nm therebetween and a conductor composed of a monocrystalline organic compound disposed between the pair of electrodes.
摘要:
A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.