摘要:
Disclosed herein is a power module package, including: a first substrate having one surface and the other surface; first vias formed to penetrate from one surface of the first substrate to the other surface thereof; a metal layer formed on one surface of the first substrate; semiconductor devices formed on the metal layer; and a metal plate formed on the other surface of the first substrate.
摘要:
Disclosed is a rigid-flexible circuit board, which includes a rigid region and a flexible region, the rigid region including a flexible substrate having a first circuit layer on both surfaces thereof, a metal core substrate formed on the flexible substrate and having a second circuit layer on both surfaces thereof, and an adhesive layer disposed between the flexible substrate and the metal core substrate, wherein the metal core substrate includes a metal core having a through hole, and an insulating layer formed on a surface of the metal core, so that the rigid region and the flexible region are thermally separated from each other and heat dissipation properties of the rigid region are improved. A method of manufacturing the rigid-flexible circuit board is also provided.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: a base substrate having grooves formed between a plurality of semiconductor device mounting areas; semiconductor devices mounted on the semiconductor device mounting areas of the base substrate; and a molding formed on the base substrate and in inner portions of the grooves.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes first and second lead frames disposed to face each other; ceramic coating layers formed on a portion of a first surface of both or one of both of the first and second lead frames; and semiconductor devices mounted on second surfaces of the first and second lead frames.
摘要:
Disclosed herein is a power module package including: a first substrate; a second substrate having a pad for connection to the first substrate formed on one side or both sides of one surface thereof and having external connection terminals for connection to the outside formed on the other surface thereof; and a lead frame having one end bonded to the first substrate and the other end bonded to the pad of the second substrate to thereby vertically connect the first and second substrates to each other.
摘要:
Disclosed herein is a semiconductor package. The semiconductor package includes a semiconductor module, a first heat dissipation unit, a second heat dissipation unit and a housing. The semiconductor module contains a semiconductor device. The first heat dissipation unit is provided under the semiconductor module. The first heat dissipation unit includes at least one first pipe through which first cooling water passes. A first rotator is rotatably disposed in the first pipe. The second heat dissipation unit is provided on the semiconductor module. The second heat dissipation unit includes at least one second pipe through which second cooling water passes. A second rotator is rotatably disposed in the second pipe. The housing is provided on opposite sides of the semiconductor module, the first heat dissipation unit and the second heat dissipation unit and supports the semiconductor module, the first heat dissipation unit and the second heat dissipation unit.
摘要:
Disclosed herein are a substrate for a power module package and a method for manufacturing the same, including: a base substrate made of a metal material; an anodized layer formed on the base substrate; and a circuit layer formed on the anodized layer, wherein the anodized layer is formed to correspond to circuit patterns on the circuit layer or is formed to be divided into a plurality of areas.
摘要:
Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.
摘要:
Disclosed herein are a power module package and a method for manufacturing the same. The power module package includes: first and second lead frames arranged to face each other, both or either of the first and second frames being made of aluminum; anodized layers formed on portions of the lead frame(s) made of aluminum in the first and second lead frames; and semiconductor devices mounted on first surfaces of the first and second lead frames.
摘要:
There is provided a semiconductor package module, and more particularly, a semiconductor package module constituted by modularizing power semiconductor devices incapable of being able to be easily integrated due to heat generated therefrom. To this end, the semiconductor package module includes a plurality of semiconductor packages; and a plurality of semiconductor packages; and a heat dissipation member having a pipe shape including a flow channel formed therein and including at least one or more through holes into which the semiconductor packages are inserted.