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    Acoustically agitated delivery
    3.
    发明授权
    Acoustically agitated delivery 失效
    声音搅动输送

    公开(公告)号：US6106374A

    公开(公告)日：2000-08-22

    申请号：US116792

    申请日：1998-07-16

    申请人： Karl E. Boggs ,  Leonard C. Stevens

    发明人： Karl E. Boggs ,  Leonard C. Stevens

    IPC分类号： B24B1/04 ,  B24B37/04 ,  B24B57/02 ,  B24B57/00

    CPC分类号： B24B37/04 ,  B24B1/04 ,  B24B57/02

    摘要： A chemical mechanical polishing apparatus comprises a delivery system for supplying a slurry, wherein the slurry includes suspended particles and at least one acoustic element, connected to the delivery system, the acoustic element generating sound waves for agitating the slurry and maintaining the particles in suspension.

    摘要翻译： 化学机械抛光装置包括用于供应浆料的输送系统，其中所述浆料包括悬浮颗粒和连接到输送系统的至少一个声学元件，所述声学元件产生用于搅拌浆料并保持悬浮液的声波。

    Regeneration of chemical mechanical polishing pads in-situ
    5.
    发明授权
    Regeneration of chemical mechanical polishing pads in-situ 失效
    化学机械抛光垫原位再生

    公开(公告)号：US06296717B1

    公开(公告)日：2001-10-02

    申请号：US09330657

    申请日：1999-06-11

    申请人： Adam D. Ticknor ,  Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael L. Passow

    发明人： Adam D. Ticknor ,  Karl E. Boggs ,  Kenneth M. Davis ,  William F. Landers ,  Michael L. Passow

    IPC分类号： C23G136

    CPC分类号： B24B37/042 ,  H01L21/30625

    摘要： An in-situ method for regenerating a chemical-mechanical polishing pad which includes the steps of: forming the polishing pad by dispensing liquid moldable material, such as wax, polymers or water, on a polishing surface and solidifying the liquid material by reducing the temperature, allowing the moldable material to harden; distributing slurry material on the polishing pad; polishing the surface of a semiconductor wafer with a combination of the slurry material and the polishing pad; and regenerating in-situ the polishing pad. This method quickly, easily and repeatably, resurfaces and refreshes the surface on which the a semiconductor wafer is polished. The polishing pad may also include abrasives embedded therein to enhance its polishing capabilities.

    摘要翻译： 一种用于再生化学机械抛光垫的原位方法，其包括以下步骤：通过在抛光表面上分配液体可模制材料（例如蜡，聚合物或水）形成抛光垫，并通过降低温度来固化液体材料 ，使可模塑材料硬化; 在抛光垫上分配浆料; 用浆料和抛光垫的组合抛光半导体晶片的表面; 并原位再生抛光垫。 该方法快速，容易和重复地重现和刷新其上抛光半导体晶片的表面。 抛光垫还可以包括嵌入其中的磨料以增强其抛光能力。

    CMP process using indicator areas to determine endpoint
    7.
    发明授权
    CMP process using indicator areas to determine endpoint 有权
    CMP过程使用指示器区域来确定端点

    公开(公告)号：US5972787A

    公开(公告)日：1999-10-26

    申请号：US135866

    申请日：1998-08-18

    申请人： Karl E. Boggs ,  Chenting Lin ,  Joachim F. Nuetzel ,  Robert Ploessl ,  Maria Ronay ,  Florian Schnabel ,  Jeremy K. Stephens

    发明人： Karl E. Boggs ,  Chenting Lin ,  Joachim F. Nuetzel ,  Robert Ploessl ,  Maria Ronay ,  Florian Schnabel ,  Jeremy K. Stephens

    IPC分类号： H01L21/304 ,  B24B37/013 ,  B24B49/12 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/66 ,  H01L23/544 ,  H01L21/4763 ,  H01L21/302 ,  H01L21/31

    CPC分类号： B24B49/12 ,  B24B37/013 ,  H01L21/31053 ,  H01L22/20 ,  H01L22/34 ,  H01L2924/0002

    摘要： The method of polishing metal layers on wafers comprises the steps of: providing indicator areas on said wafer, said indicator areas having combinations of line widths and pattern factors violating existing ground rules of metal lines thereby said indicator areas being dished out during said polishing using a chemical-mechanical polisher to polish the metal layers to remove material therefrom, inspecting indicator areas on the wafer to determine an amount of material removed from said areas, and adjusting the operation of the chemical-mechanical polisher in response to the inspection of the indicator areas. The indicator areas may include macroblocks comprised of a multitude of individual blocks. The wafer may be inspected by optically identifying the polishing state of to blocks in the macroblock. Additionally, the process may be automated for mass production. A feedback loop to the polisher can be formed where data from optical inspection of macroblocks on a polished wafer can be immediately fed back to the polisher in order to adjust process parameters.

    摘要翻译： 在晶片上抛光金属层的方法包括以下步骤：在所述晶片上提供指示器区域，所述指示器区域具有违反金属线的现有基准规则的线宽度和图案因素的组合，从而在所述抛光期间抛光所述指示器区域， 化学机械抛光机抛光金属层以从中去除材料，检查晶片上的指示器区域以确定从所述区域移除的材料的量，以及响应于指示器区域的检查来调整化学机械抛光机的操作 。 指示器区域可以包括由多个单独块组成的宏块。 可以通过光学地识别宏块中的块的抛光状态来检查晶片。 此外，该方法可以自动化用于批量生产。 可以形成到抛光机的反馈回路，其中来自抛光晶片上的宏块的光学检查的数据可以被立即反馈到抛光机，以便调整工艺参数。

    High throughput chemical mechanical polishing composition for metal film planarization
    9.
    发明授权
    High throughput chemical mechanical polishing composition for metal film planarization 失效
    用于金属膜平面化的高通量化学机械抛光组合物

    公开(公告)号：US08304344B2

    公开(公告)日：2012-11-06

    申请号：US12026414

    申请日：2008-02-05

    申请人： Karl E. Boggs ,  Michael S. Darsillo ,  Peter Wrschka ,  James Welch

    发明人： Karl E. Boggs ,  Michael S. Darsillo ,  Peter Wrschka ,  James Welch

    IPC分类号： H01L21/302

    CPC分类号： C09G1/02 ,  B24B37/044 ,  H01L21/3212

    摘要： A chemical mechanical polishing process including a single copper removal CMP slurry formulation for planarization of a microelectronic device structure preferably having copper deposited thereon. The process includes the bulk removal of a copper layer using a first CMP slurry formulation having oxidizing agent, passivating agent, abrasive and solvent, and the soft polishing and over-polishing of the microelectronic device structure using a formulation including the first CMP slurry formulation and at least one additional additive. The CMP process described herein provides a high copper removal rate, a comparatively low barrier material removal rate, appropriate material selectivity ranges to minimize copper dishing at the onset of barrier material exposure, and good planarization efficiency.

    摘要翻译： 化学机械抛光方法，其包括用于平坦化微电子器件结构的单一铜去除CMP浆料制剂，优选在其上沉积铜。 该方法包括使用具有氧化剂，钝化剂，研磨剂和溶剂的第一CMP浆料制剂以及使用包括第一CMP浆料配方的制剂对微电子器件结构进行软抛光和过度抛光的铜层的大量去除， 至少一种附加添加剂。 本文所述的CMP方法提供了高的铜去除速率，较低的屏障材料去除速率，适当的材料选择性范围，以使阻挡材料暴露开始时的铜凹陷最小化以及良好的平坦化效率。