摘要:
An electrical connection structure for an integrated circuit chip includes a through via provided in a opening and a laterally adjacent void that are formed in a rear face of a substrate die. A front face of the substrate die includes integrated circuits and a layer incorporating a front electrical interconnect network. The via extends through the substrate die to reach a connection portion of the front electrical interconnect network. An electrical connection pillar made of an electrically conductive material is formed on a rear part of the electrical connection via above the void. A local external protection layer may at least partly cover the electrical connection via and the electrical connection pillar.
摘要:
Integrated-circuit chips are fabricated according to a process wherein weak portions are formed in a substrate wafer surrounding a plurality of locations. An integrated-circuit chip is defined at each location by destroying the weak portions so as to singulate integrated-circuit chips.
摘要:
A semiconductor device includes an assembly of two integrated circuits. The assembly has a layer of photoresist filling the space between the two integrated circuits, and at least one electrically conducting pillar within the resist and electrically coupling the two integrated circuits.
摘要:
A method is for formation of an electrically conducting through-via within a first semiconductor support having a front face and comprising a silicon substrate. The method may include forming of a first insulating layer on top of the front face of the first semiconductor support, fabricating a handle including, within an additional rigid semiconductor support having an intermediate semiconductor layer, and forming on either side of the intermediate semiconductor layer of a porous region and of an additional insulating layer. The method may also include direct bonding of the first insulating layer and of the additional insulating layer, and thinning of the silicon substrate of the first semiconductor support so as to form a back face opposite to the front face.
摘要:
An electronic chip including a semiconductor substrate (1) covered with an insulating layer (4) including metal interconnection levels (3) and interconnection pillars (10) connected to said metal interconnection levels (3), said pillars (110) forming regions (111) protruding from the upper surface of said insulating layer (4) and capable of forming an electric contact, wherein said pillars (110) have a built-in portion (115) in a housing formed across the thickness of at least said insulating layer (4).
摘要:
Front-side integrated parts of integrated-circuit chips are produced at locations on a substrate wafer. The front-side parts have a front side. A support wafer having a bearing side is mounted with the bearing side on top of said front-side parts. The support wafer includes at least one weak surface layer. This weak surface layer is attached to the substrate wafer using a retaining adhesive. In one implementation, the weak surface layer is attached to a front surface of the wafer. In another implementation, the weak surface layer is attached to a peripheral edge of the wafer. After attaching the support wafer, back-side integrated parts of the integrated-circuit chips are produced on the substrate wafer. The weak surface layer is then destroyed so as to demount the support wafer from the substrate wafer.
摘要:
A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which the at least one through via is formed by a substantially identical method, a rear surface layer being further arranged on this second wafer so that the via emerges on the layer; measuring the mechanical stress in the rear surface layer; and deducing therefrom the mechanical stress induced in the first semiconductor material wafer.
摘要:
Front-side integrated parts of integrated-circuit chips are produced at locations on a substrate wafer. The front-side parts have a front side. A support wafer having a bearing side is mounted with the bearing side on top of said front-side parts. The support wafer includes at least one weak surface layer. This weak surface layer is attached to the substrate wafer using a retaining adhesive. In one implementation, the weak surface layer is attached to a front surface of the wafer. In another implementation, the weak surface layer is attached to a peripheral edge of the wafer. After attaching the support wafer, back-side integrated parts of the integrated-circuit chips are produced on the substrate wafer. The weak surface layer is then destroyed so as to demount the support wafer from the substrate wafer.
摘要:
An electrical connection structure for an integrated circuit chip includes a through via provided in a opening and a laterally adjacent void that are formed in a rear face of a substrate die. A front face of the substrate die includes integrated circuits and a layer incorporating a front electrical interconnect network. The via extends through the substrate die to reach a connection portion of the front electrical interconnect network. An electrical connection pillar made of an electrically conductive material is formed on a rear part of the electrical connection via above the void. A local external protection layer may at least partly cover the electrical connection via and the electrical connection pillar.
摘要:
A method for determining, in a first semiconductor material wafer having at least one through via, mechanical stress induced by the at least one through via, this method including the steps of: manufacturing a test structure from a second wafer of the same nature as the first wafer, in which the at least one through via is formed by a substantially identical method, a rear surface layer being further arranged on this second wafer so that the via emerges on the layer; measuring the mechanical stress in the rear surface layer; and deducing therefrom the mechanical stress induced in the first semiconductor material wafer.