摘要:
A power module includes a substrate that includes an upper layer, an electrical insulator and a thermal coupling layer. The upper layer includes an electrically conductive pattern and is configured for receiving power devices. The electrical insulator is disposed between the upper layer and the thermal coupling layer. The thermal coupling layer is configured for thermal coupling to a heat sink. The power module further includes at least one laminar interconnect that includes first and second electrically conductive layers and an insulating layer disposed between the first and second electrically conductive layers. The first electrically conductive layer of the laminar interconnect is electrically connected to the upper layer of the substrate. Electrical connections connect a top side of the power devices to the second electrically conductive layer of the laminar interconnect.
摘要:
A power module includes at least one semiconductor die holding structure. Each die holding structure has a substantially cylindrical outer profile and a central axis. Each die holding structure is disposed within a common cylindrical EMI shield. A plurality of semiconductor devices are mounted to each die holding structure to form a substantially symmetric die mounting pattern respect to the central axis of the die holding structure.
摘要:
A heat sink for directly cooling at least one electronic device package is provided. The electronic device package has an upper contact surface and a lower contact surface. The heat sink comprises a cooling piece formed of at least one thermally conductive material. The cooling piece defines multiple inlet manifolds configured to receive a coolant and multiple outlet manifolds configured to exhaust the coolant. The inlet and outlet manifolds are interleaved. The cooling piece further defines multiple millichannels configured to receive the coolant from the inlet manifolds and to deliver the coolant to the outlet manifolds. The millichannels and inlet and outlet manifolds are further configured to directly cool one of the upper and lower contact surface of the electronic device package by direct contact with the coolant, such that the heat sink comprises an integral heat sink.
摘要:
A cooling device includes a ceramic substrate with a metal layer bonded to an outer planar surface. The cooling device also includes a channel layer bonded to an opposite side of the ceramic substrate and a manifold layer bonded to an outer surface of the channel layer. The substrate layers are bonded together using a high temperature process such as brazing to form a single substrate assembly. A plenum housing is bonded to the single substrate assembly via a low temperature bonding process such as adhesive bonding and is configured to provide extended manifold layer inlet and outlet ports.
摘要:
A power module includes at least one semiconductor die holding structure. Each die holding structure has a substantially cylindrical outer profile and a central axis. Each die holding structure is disposed within a common cylindrical EMI shield. A plurality of semiconductor devices are mounted to each die holding structure to form a substantially symmetric die mounting pattern respect to the central axis of the die holding structure.
摘要:
A heat sink for cooling at least one electronic device package is provided. The electronic device package has an upper contact surface and a lower contact surface. The heat sink comprises at least one thermally conductive material and defines multiple inlet manifolds configured to receive a coolant, multiple outlet manifolds configured to exhaust the coolant, and multiple millichannels configured to receive the coolant from the inlet manifolds and to deliver the coolant to the outlet manifolds. The manifolds and millichannels are disposed proximate to the respective one of the upper and lower contact surface of the electronic device package for cooling the respective surface with the coolant.
摘要:
A device is provided that includes a first conductive substrate and a second conductive substrate. A first power semiconductor component having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal can also be electrically coupled to the first conductive substrate, while a negative terminal can be electrically coupled to the second power semiconductor component, and an output terminal may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.
摘要:
A substrate for power electronics mounted thereon, comprises a middle ceramic layer having a lower surface and an upper surface, an upper metal layer attached to the upper surface of the middle ceramic layer, and a lower metal layer attached to the lower surface of the middle ceramic layer. The lower metal layer has a plurality of millichannels configured to deliver a coolant for cooling the power electronics, wherein the millichannels are formed on the lower metal layer prior to attachment to the lower surface of the middle ceramic layer. Methods for making a cooling device and an apparatus are also presented.
摘要:
A heat sink for directly cooling at least one electronic device package is provided. The electronic device package has an upper contact surface and a lower contact surface. The heat sink comprises a cooling piece formed of at least one thermally conductive material. The cooling piece defines multiple inlet manifolds configured to receive a coolant and multiple outlet manifolds configured to exhaust the coolant. The inlet and outlet manifolds are interleaved. The cooling piece further defines multiple millichannels configured to receive the coolant from the inlet manifolds and to deliver the coolant to the outlet manifolds. The millichannels and inlet and outlet manifolds are further configured to directly cool one of the upper and lower contact surface of the electronic device package by direct contact with the coolant, such that the heat sink comprises an integral heat sink.
摘要:
A device is provided that includes a first conductive substrate and a second conductive substrate. A first power semiconductor component having a first thickness can be electrically coupled to the first conductive substrate. A second power semiconductor component having a second thickness can be electrically coupled to the second conductive substrate. A positive terminal can also be electrically coupled to the first conductive substrate, while a negative terminal can be electrically coupled to the second power semiconductor component, and an output terminal may be electrically coupled to the first power semiconductor component and the second conductive substrate. The terminals, the power semiconductor components, and the conductive substrates may thereby be incorporated into a common circuit loop, and may together be configured such that a width of the circuit loop in at least one direction is defined by at least one of the first thickness or the second thickness.