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    ELECTRONIC TEXT TO BRAILLE DEVICE
    6.
    发明申请
    ELECTRONIC TEXT TO BRAILLE DEVICE 审中-公开

    公开(公告)号：US20190236120A1

    公开(公告)日：2019-08-01

    申请号：US15884311

    申请日：2018-01-30

    申请人： Eric Thomas Reid ,  Katherine Isabella Porfirio ,  Nelson Tansu

    发明人： Eric Thomas Reid ,  Katherine Isabella Porfirio ,  Nelson Tansu

    IPC分类号： G06F17/22 ,  A61F9/08 ,  G09B21/00 ,  G06F15/02

    CPC分类号： G06F17/2223 ,  A61F9/08 ,  G06F15/025 ,  G09B21/004

    摘要： At present, a vast number of technologies are designed specifically for users that are able to employ the use of sight. Additionally, many products designed to allow the visually impaired to use these technologies are expensive, and often not easy to use. In order to expand the benefits of technology to the visually impaired, we have invented an Electronic Braille Interface that can connect to any device with a USB port (laptops, cell phones, e-readers, etc.) and effectively translate ASCII characters from the device into physical Braille characters. The Braille text will be displayed on the Electronic Braille Interface though moveable pins that, in groups of six, are able to display different Braille characters in the same fashion as normal, stationary Braille text. The user will be able to feel the pins and interpret the Braille characters. The pins are raised through a magnetic write head, which moves from letter to letter through the use of a motorized positioning system in order to raise the correct pins for each character. The pins are held in their up or down states through a system of springs and magnets. This allows a very small set of motors to easily write all of the characters on the display. A pin is held in the up position through the attraction of a magnet on the bottom of the pin with an iron layer embedded into the screen. The spring is in equilibrium when the pin is in the down position, and is compressed when the pin is in the up position; so that it can effectively hold the pin in the down position by default. When the write head reaches the pin, it applies a current to a coil directly underneath the pin, which will produce enough magnetic force to make the pin switch to the up position. A bar magnet resets all of the pins simultaneously by moving across the entire device and creating a magnetic force that causes all of the pins to reset to the down position. Additionally, a software program will be installed on any device connecting to the Electronic Braille Interface in order to write, erase, and control the pins. Our Electronic Braille Interface will be low-cost, lightweight, and able to integrate well into existing devices. Future generations will include the capability of drawing images, creating interactive displays, and allowing the user to play games (similar to the games that people often play on their cell phones or tablets).

    Staggered composition quantum well method and device
    7.
    发明授权
    Staggered composition quantum well method and device 有权
    交错组合量子阱方法和装置

    公开(公告)号：US08659005B2

    公开(公告)日：2014-02-25

    申请号：US12520708

    申请日：2007-12-24

    申请人： Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee ,  Hongping Zhao

    发明人： Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee ,  Hongping Zhao

    IPC分类号： H01L29/06 ,  H01S5/00

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/0014 ,  H01S5/342 ,  H01S5/3422 ,  H01S5/34333

    摘要： A light emitting device comprising a staggered composition quantum well (QW) has a step-function-like profile in the QW, which provides higher radiative efficiency and optical gain by providing improved electron-hole wavefunction overlap. The staggered QW includes adjacent layers having distinctly different compositions. The staggered QW has adjacent layers Xn wherein X is a quantum well component and in one quantum well layer n is a material composition selected for emission at a first target light regime, and in at least one other quantum well layer n is a distinctly different composition for emission at a different target light regime. X may be an In-content layer and the multiple Xn-containing a step function In-content profile.

    摘要翻译： 包括交错组合量子阱（QW）的发光器件在QW中具有阶梯函数样轮廓，其通过提供改进的电子 - 空穴波函数重叠来提供更高的辐射效率和光学增益。 交错的QW包括具有明显不同组成的相邻层。 交错的QW具有相邻层Xn，其中X是量子阱分量，并且在一个量子阱层n中，选择用于在第一目标光状态下发射的材料组成，并且在至少一个其它量子阱层n中是明显不同的组成 用于在不同的目标光体系下发射。 X可以是内容层，并且具有多个Xn的步骤功能内容简档。

    SEMICONDUCTOR LIGHT-EMITTING DEVICES HAVING CONCAVE MICROSTRUCTURES PROVIDING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR PRODUCING SAME
    8.
    发明申请
    SEMICONDUCTOR LIGHT-EMITTING DEVICES HAVING CONCAVE MICROSTRUCTURES PROVIDING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR PRODUCING SAME 有权
    具有提供改进的光提取效率的微结构的半导体发光装置及其生产方法

    公开(公告)号：US20110155999A1

    公开(公告)日：2011-06-30

    申请号：US12963098

    申请日：2010-12-08

    申请人： Nelson Tansu ,  James F. Gilchrist ,  Yik-Khoon Ee ,  Pisist Kumnorkaew

    发明人： Nelson Tansu ,  James F. Gilchrist ,  Yik-Khoon Ee ,  Pisist Kumnorkaew

    IPC分类号： H01L33/32 ,  H01L33/58 ,  H01L33/50

    CPC分类号： H01L33/22 ,  H01L33/06 ,  H01L33/58 ,  H01L2933/0058 ,  H01L2933/0091

    摘要： A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

    摘要翻译： 常规的半导体LED被修改为在其发光表面上包括微透镜。 LED可以具有包括至少一个InGaN和GaN的量子阱层的有源层。 微透镜层包括多个凹形微结构，其使得从LED发出的光线向外扩散，导致LED的光提取效率的增加。 凹形微结构可以以基本均匀的阵列布置，例如紧密堆积的六边形阵列。 微透镜层优选由可固化材料（例如聚二甲基硅氧烷（PDMS））构成，并且通过软平版印刷形成，通过使微透镜层的流体材料与含有单层均匀微球晶体的模板接触，以产生凹面印模，以及 然后固化材料以将微观结构层中的凹形微结构固定在微透镜层中并提供相对均匀的表面粗糙度。

    GALLIUM NITRIDE-BASED DEVICE AND METHOD
    9.
    发明申请
    GALLIUM NITRIDE-BASED DEVICE AND METHOD 有权
    基于氮化镓的设备和方法

    公开(公告)号：US20090162963A1

    公开(公告)日：2009-06-25

    申请号：US12398448

    申请日：2009-03-05

    申请人： Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee

    发明人： Nelson Tansu ,  Ronald A. Arif ,  Yik Khoon Ee

    IPC分类号： H01L33/00

    CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/3422 ,  H01S5/34333

    摘要： A gallium nitride-based device has a first GaN layer and a type II quantum well active region over the GaN layer. The type II quantum well active region comprises at least one InGaN layer and at least one GaNAs layer comprising 1.5 to 8% As concentration. The type II quantum well emits in the 400 to 700 nm region with reduced polarization affect.

    摘要翻译： 氮化镓基器件在GaN层上具有第一GaN层和II型量子阱有源区。 II型量子阱有源区包括至少一个InGaN层和至少一个包含1.5至8％As浓度的GaNA层。 II型量子阱在400至700nm区域发射，具有减小的偏振影响。

    Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same
    10.
    发明授权
    Semiconductor light-emitting devices having concave microstructures providing improved light extraction efficiency and method for producing same 有权
    具有提供改进的光提取效率的凹形微结构的半导体发光器件及其制造方法

    公开(公告)号：US08586963B2

    公开(公告)日：2013-11-19

    申请号：US12963098

    申请日：2010-12-08

    申请人： Nelson Tansu ,  James F. Gilchrist ,  Yik-Khoon Ee ,  Pisist Kumnorkaew

    发明人： Nelson Tansu ,  James F. Gilchrist ,  Yik-Khoon Ee ,  Pisist Kumnorkaew

    IPC分类号： H01L33/24

    CPC分类号： H01L33/22 ,  H01L33/06 ,  H01L33/58 ,  H01L2933/0058 ,  H01L2933/0091

    摘要： A conventional semiconductor LED is modified to include a microlens layer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness.

    摘要翻译： 常规的半导体LED被修改为在其发光表面上包括微透镜层。 LED可以具有包括至少一个InGaN和GaN的量子阱层的有源层。 微透镜层包括多个凹形微结构，其使得从LED发出的光线向外扩散，导致LED的光提取效率的提高。 凹形微结构可以以基本均匀的阵列布置，例如紧密堆积的六边形阵列。 微透镜层优选由可固化材料（例如聚二甲基硅氧烷（PDMS））构成，并且通过软平版印刷形成，通过使微透镜层的流体材料与带有单层均匀微球晶体的模板接触以引起凹面印模，以及 然后固化材料以将微观结构层中的凹形微结构固定在微透镜层中并提供相对均匀的表面粗糙度。