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    METHOD FOR EXPOSING A WAFER
    4.
    发明申请
    METHOD FOR EXPOSING A WAFER 审中-公开
    曝光方法

    公开(公告)号：US20140264085A1

    公开(公告)日：2014-09-18

    申请号：US14287241

    申请日：2014-05-27

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Teunis VAN DE PEUT ,  Marco Jan-Jaco WIELAND

    IPC: H01J37/317 ,  H01J37/30

    CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  G06T1/20 ,  G06T1/60 ,  H01J37/045 ,  H01J37/3002 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31761 ,  H01J2237/31764 ,  H04N1/405

    Abstract: A method for exposing a wafer according to pattern data using a charged particle lithography machine generating a plurality of charged particle beamlets for exposing the wafer. The method comprises providing the pattern data in a vector format, rendering the vector pattern data to generate multi-level pattern data, dithering the multi-level pattern data to generate two-level pattern data, supplying the two-level pattern data to the charged particle lithography machine, and switching on and off the beamlets generated by the charged particle lithography machine on the basis of the two-level pattern data, wherein the pattern data is adjusted on the basis of corrective data.

    Abstract translation: 一种用于使用产生多个带电粒子子束的带电粒子光刻机根据图案数据曝光晶片的方法，用于暴露晶片。 该方法包括以矢量格式提供图形数据，渲染矢量图案数据以产生多电平图案数据，使多电平图案数据抖动以产生两电平图案数据，将两电平图案数据提供给带电 并且基于两级图案数据来打开和关闭由带电粒子光刻机产生的子束，其中基于校正数据调整图案数据。

    MULTI-ELECTRODE ELECTRON OPTICS
    6.
    发明申请
    MULTI-ELECTRODE ELECTRON OPTICS 有权
    多电极电子光学

    公开(公告)号：US20150136995A1

    公开(公告)日：2015-05-21

    申请号：US14541233

    申请日：2014-11-14

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Marco Jan-Jaco WIELAND ,  Willem Henk URBANUS

    IPC: G21K1/02 ,  G21K5/04 ,  H01J37/30

    CPC classification number: G21K1/02 ,  G21K5/04 ,  H01J37/026 ,  H01J37/065 ,  H01J37/12 ,  H01J37/16 ,  H01J37/24 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/002 ,  H01J2237/0216 ,  H01J2237/024 ,  H01J2237/032 ,  H01J2237/04 ,  H01J2237/1215 ,  H01J2237/16 ,  H01J2237/1825 ,  H01J2237/303 ,  H01J2237/30472

    Abstract: The invention relates to a collimator electrode stack (70), comprising: at least three collimator electrodes (71-80) for collimating a charged particle beam along an optical axis (A), wherein each collimator electrode comprises an electrode body with an electrode aperture for allowing passage to the charged particle beam, wherein the electrode bodies are spaced along an axial direction (Z) which is substantially parallel with the optical axis, and wherein the electrode apertures are coaxially aligned along the optical axis; and a plurality of spacing structures (89) provided between each pair of adjacent collimator electrodes and made of an electrically insulating material, for positioning the collimator electrodes at predetermined distances along the axial direction. Each of the collimator electrodes (71-80) is electrically connected to a separate voltage output (151-160).The invention further relates to a method of operating a charged particle beam generator.

    Abstract translation: 本发明涉及一种准直电极堆叠（70），包括：用于沿着光轴（A）准直带电粒子束的至少三个准直器电极（71-80），其中每个准直器电极包括具有电极孔 允许通过所述带电粒子束，其中所述电极体沿着与所述光轴基本平行的轴向方向（Z）间隔开，并且其中所述电极孔沿着所述光轴同轴对准; 以及设置在每对相邻的准直器电极之间并由电绝缘材料制成的多个间隔结构（89），用于沿着轴向将准直器电极定位在预定距离。 每个准直器电极（71-80）电连接到单独的电压输出（151-160）。 本发明还涉及一种操作带电粒子束发生器的方法。

    CHARGED PARTICLE LITHOGRAPHY SYSTEM
    7.
    发明申请
    CHARGED PARTICLE LITHOGRAPHY SYSTEM 审中-公开
    充电粒子光刻系统

    公开(公告)号：US20140264086A1

    公开(公告)日：2014-09-18

    申请号：US14287234

    申请日：2014-05-27

    Applicant: MAPPER LITHOGRAPHY IP B.V.

    Inventor： Teunis VAN DE PEUT ,  Marco Jan-Jaco WIELAND

    IPC: H01J37/04 ,  H01J37/317

    CPC classification number: H01J37/3026 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/70475 ,  G06T1/20 ,  G06T1/60 ,  H01J37/045 ,  H01J37/3002 ,  H01J37/3174 ,  H01J37/3175 ,  H01J37/3177 ,  H01J2237/3175 ,  H01J2237/31761 ,  H01J2237/31764 ,  H04N1/405

    Abstract: A charged particle lithography system for exposing a wafer according to pattern data. The system comprises an electron optical column for generating a plurality of electron beamlets for exposing the wafer, the electron optical column including a beamlet blanker array for switching the beamlets on or off, a data path for transmitting beamlet control data for control of the switching of the beamlets, and a wafer positioning system for moving the wafer under the electron optical column in a scan direction. The wafer positioning system is provided with synchronization signals from the data path to align the wafer with the electron beams from the electron-optical column. The data path further comprises one or more processing units for generating the beamlet control data and one or more transmission channels for transmitting the beamlet control data to the beamlet blanker array.

    Abstract translation: 一种用于根据图案数据曝光晶片的带电粒子光刻系统。 该系统包括用于产生用于暴露晶片的多个电子子束的电子光学柱，该电子光学柱包括用于开启或关闭子束的子束遮蔽器阵列，用于发射用于控制切换的子束控制数据的数据路径 子束，以及用于在扫描方向上移动电子光学柱下的晶片的晶片定位系统。 晶圆定位系统具有来自数据通路的同步信号，以将晶片与来自电子 - 光学柱的电子束对准。 数据路径还包括用于产生子束控制数据的一个或多个处理单元和用于将子束控制数据发送到子束消隐器阵列的一个或多个传输信道。

    METHOD OF AND SYSTEM FOR EXPOSING A TARGET
    8.
    发明申请
    METHOD OF AND SYSTEM FOR EXPOSING A TARGET 有权
    用于实现目标的方法和系统

    公开(公告)号：US20140042334A1

    公开(公告)日：2014-02-13

    申请号：US13935602

    申请日：2013-07-05

    Applicant: Mapper Lithography IP B.V.

    Inventor： Marco Jan-Jaco WIELAND

    IPC: H01J37/317

    CPC classification number: H01J37/3177 ,  B82Y10/00 ,  B82Y40/00

    Abstract: The invention relates to a method of exposing a target by means of a plurality of beamlets. First, a plurality of beamlets is provided. The beamlets are arranged in an array. Furthermore, a target to be exposed is provided. Subsequently, relative movement in a first direction between the plurality of beamlets and the target is created. Finally, the plurality of beamlets is moved in a second direction, such that each beamlet exposes a plurality of scan lines on the target. The relative movement in the first direction and the movement of the plurality of beamlets in the second direction are such that the distance between adjacent scan lines exposed by the plurality of beamlets is smaller than a projection pitch Pproj,X in the first direction between beamlets of the plurality of beamlets in the array.

    Abstract translation: 本发明涉及通过多个子束曝光目标的方法。 首先，提供多个子束。 子束排列成阵列。 此外，提供要暴露的目标。 随后，产生在多个子束与目标之间的第一方向的相对运动。 最后，多个子束在第二方向上移动，使得每个子束在目标上露出多条扫描线。 第一方向上的相对移动和多个子束在第二方向上的移动使得由多个子束暴露的相邻扫描线之间的距离小于第一方向上的投影间距Pproj，X在子束之间的第一方向上 阵列中的多个子束。

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