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14 条记录 (耗时 0.027 秒)

    Methods and apparatus for forming nitrogen-containing layers
    2.
    发明授权
    Methods and apparatus for forming nitrogen-containing layers 有权
    用于形成含氮层的方法和装置

    公开(公告)号：US08546273B2

    公开(公告)日：2013-10-01

    申请号：US13192139

    申请日：2011-07-27

    申请人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

    发明人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

    IPC分类号： H01L21/469

    CPC分类号： H01L21/3144 ,  C23C8/02 ,  C23C8/36 ,  C23C8/80 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/318

    摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH3) and an inert gas while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer.

    摘要翻译： 本文提供了形成含氮层的方法和装置。 在一些实施方案中，形成含氮层的方法可以包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将基底加热到至少约250摄氏度的温度; 以及将第一层暴露于由基本上由氨（NH 3）和惰性气体组成的工艺气体形成的射频（RF）等离子体，同时将处理室保持在约10mTorr至约40mTorr的压力下，以至少将 第一层的上部成为含氮层。

    Methods and apparatus for forming nitrogen-containing layers
    3.
    发明授权
    Methods and apparatus for forming nitrogen-containing layers 有权
    用于形成含氮层的方法和装置

    公开(公告)号：US08481433B2

    公开(公告)日：2013-07-09

    申请号：US12749088

    申请日：2010-03-29

    申请人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

    发明人： Malcolm J. Bevan ,  Johanes Swenberg ,  Son T. Nguyen ,  Wei Liu ,  Jose Antonio Marin ,  Jian Li

    IPC分类号： H01L21/469

    CPC分类号： H01L21/3144 ,  C23C8/02 ,  C23C8/36 ,  C23C8/80 ,  H01L21/02329 ,  H01L21/02332 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/318

    摘要： Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method includes placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas comprising nitrogen while maintaining the process chamber at a pressure of about 10 mTorr to about 40 mTorr to transform at least an upper portion of the first layer into a nitrogen-containing layer. In some embodiments, the process gas includes ammonia (NH3).

    摘要翻译： 本文提供了形成含氮层的方法和装置。 在一些实施例中，一种方法包括将其上设置有第一层的衬底放置在处理室的衬底支撑件上; 将基底加热到至少约250摄氏度的温度; 以及将第一层暴露于由包括氮气的工艺气体形成的射频（RF）等离子体，同时将处理室保持在约10mTorr至约40mTorr的压力，以将至少第一层的上部转化为氮 包含层。 在一些实施方案中，工艺气体包括氨（NH 3）。

    Electrostatic chuck assembly
    4.
    发明授权
    Electrostatic chuck assembly 有权
    静电吸盘组件

    公开(公告)号：US09117867B2

    公开(公告)日：2015-08-25

    申请号：US13536098

    申请日：2012-06-28

    申请人： Bernard L. Hwang ,  Jose Antonio Marin ,  Son T. Nguyen

    发明人： Bernard L. Hwang ,  Jose Antonio Marin ,  Son T. Nguyen

    IPC分类号： H01L21/683 ,  H01L21/687

    CPC分类号： H01L21/6833 ,  H01L21/68785 ,  Y10T279/23

    摘要： Embodiments of electrostatic chucks for substrate processing are provided herein. In some embodiments, an electrostatic chuck may include a puck for supporting a substrate, the puck formed from a dielectric material and having a chucking electrode disposed within the puck proximate a support surface of the puck to electrostatically retain the substrate when disposed on the puck; a base having a ring extending from the base to support the puck; and a spacer disposed between the base and the puck to support the puck above the base such that a gap is formed between the puck and the base, wherein the spacer supports the puck proximate a peripheral edge of the puck.

    摘要翻译： 本文提供了用于基板处理的静电卡盘的实施例。 在一些实施例中，静电卡盘可以包括用于支撑基底的圆盘，所述圆盘由电介质材料形成，并且具有设置在靠近所述圆盘的支撑表面的所述圆盘内的卡盘电极，以在设置在所述圆盘上时静电地保持所述基板; 具有从所述基部延伸以支撑所述圆盘的环的基部; 以及间隔件，其设置在所述基部和所述圆盘之间，以将所述圆盘支撑在所述基座上方，使得在所述圆盘和所述基座之间形成间隙，其中所述间隔件支撑靠近所述圆盘的周边边缘的所述圆盘。

    CHAMBER FOR PROCESSING HARD DISK DRIVE SUBSTRATES
    6.
    发明申请
    CHAMBER FOR PROCESSING HARD DISK DRIVE SUBSTRATES 审中-公开
    用于加工硬盘驱动基板的机箱

    公开(公告)号：US20110127156A1

    公开(公告)日：2011-06-02

    申请号：US12955619

    申请日：2010-11-29

    申请人： Majeed A. Foad ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Jose Antonio Marin ,  Matthew D. Scotney-Castle

    发明人： Majeed A. Foad ,  Martin A. Hilkene ,  Peter I. Porshnev ,  Jose Antonio Marin ,  Matthew D. Scotney-Castle

    IPC分类号： C23C14/34

    CPC分类号： G11B5/8404

    摘要： An apparatus for forming a magnetic pattern in a magnetic storage substrate. A chamber comprises a chamber wall that defines an internal volume, a substrate support in the internal volume of the chamber, a gas distributor disposed in a wall region of the chamber facing the substrate support, a compact energy source for ionizing a portion of the process gas provided to the chamber, and a throttle valve having a z-actuated gate member with a sealing surface for covering an outlet portal of the chamber. Ions are accelerated toward the substrate support by an electrical bias, amplifying the ion density of the process gas. A substrate disposed on the substrate support is bombarded by the ions to alter a magnetic property of the substrate surface.

    摘要翻译： 一种用于在磁存储基板中形成磁图案的装置。 室包括限定内部容积的室壁，室的内部体积中的衬底支撑件，布置在面向衬底支撑件的腔室的壁区域中的气体分配器，用于使过程的一部分电离的紧凑能量源 提供给腔室的气体以及具有z致动门构件的节流阀，其具有用于覆盖腔室出口的密封表面。 离子通过电偏压加速朝向衬底支撑，从而放大工艺气体的离子密度。 设置在基板支撑体上的基板被离子轰击以改变基板表面的磁性。

    INDUCTIVE PLASMA SOURCE WITH METALLIC SHOWER HEAD USING B-FIELD CONCENTRATOR
    7.
    发明申请
    INDUCTIVE PLASMA SOURCE WITH METALLIC SHOWER HEAD USING B-FIELD CONCENTRATOR 审中-公开
    使用B场浓缩器的金属淋浴头的电感等离子体源

    公开(公告)号：US20110278260A1

    公开(公告)日：2011-11-17

    申请号：US12780531

    申请日：2010-05-14

    申请人： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

    发明人： Canfeng Lai ,  Jeffrey Tobin ,  Peter I. Porshnev ,  Jose Antonio Marin

    IPC分类号： H01L21/306 ,  C23F1/00 ,  B05D1/00 ,  C23C16/00 ,  H05H1/24

    CPC分类号： H01J37/3211 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J2237/33

    摘要： A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.

    摘要翻译： 提供了一种用于衬底等离子体处理的方法和装置。 处理室具有基板支撑件和面向基板支撑件的盖组件。 盖组件具有等离子体源，其包括设置在导电板内的感应线圈，其可以包括嵌套的导电环。 感应线圈与导电板基本上共面，并且通过安装在形成在导电板中的通道内的绝缘体与绝缘体绝缘，或嵌套在导电环内。 在感应线圈周围设置场集中器，并通过隔离器与其隔离。 等离子体源由导电支撑板支撑。 气体分配器通过支撑板的中心开口和来自设置穿过导电板的导管的等离子体源向腔室供应气体。

    SYSTEM FOR BATCH PROCESSING OF MAGNETIC MEDIA
    8.
    发明申请
    SYSTEM FOR BATCH PROCESSING OF MAGNETIC MEDIA 有权
    磁介质批处理系统

    公开(公告)号：US20110163065A1

    公开(公告)日：2011-07-07

    申请号：US12984528

    申请日：2011-01-04

    申请人： Steven Verhaverbeke ,  Jose Antonio Marin

    发明人： Steven Verhaverbeke ,  Jose Antonio Marin

    IPC分类号： G11B5/84 ,  C23C16/448 ,  H01L21/3065 ,  C23C16/458 ,  B05C13/02 ,  B05D5/12

    CPC分类号： G11B5/8404 ,  C23C14/48 ,  C23C14/50 ,  H01L21/67721 ,  H01L21/67736 ,  H01L21/67766 ,  H01L21/67781 ,  H01L21/68771

    摘要： A method and apparatus for processing multiple substrates simultaneously is provided. Each substrate may have two major active surfaces to be processed. The apparatus has a substrate handling module and a substrate processing module. The substrate handling module has a loader assembly, a flipper assembly, and a factory interface. Substrates are disposed on a substrate carrier at the loader assembly. The flipper assembly is used to flip all the substrates on a substrate carrier in the event two-sided processing is required. The factory interface positions substrate carriers holding substrates for entry into and exit from the substrate processing module. The substrate processing module comprises a load-lock, a transfer chamber, and a plurality of processing chambers, each configured to process multiple substrates disposed on a substrate carrier.

    摘要翻译： 提供了一种用于同时处理多个基板的方法和装置。 每个基底可以具有待处理的两个主要活性表面。 该装置具有基板处理模块和基板处理模块。 基板处理模块具有加载器组件，导板组件和工厂接口。 衬底在装载机组件上设置在衬底载体上。 在需要双面处理的情况下，导板组件用于翻转衬底载体上的所有衬底。 工厂接口定位用于保持进入和离开基板处理模块的基板的基板载体。 衬底处理模块包括负载锁定，传送室和多个处理室，每个处理室被配置为处理设置在衬底载体上的多个衬底。