Solid-state imaging apparatus and signal processing method for transforming image signals output from a honeycomb arrangement to high quality video signals
    1.
    发明授权
    Solid-state imaging apparatus and signal processing method for transforming image signals output from a honeycomb arrangement to high quality video signals 失效
    用于将从蜂窝装置输出的图像信号变换为高质量视频信号的固态成像装置和信号处理方法

    公开(公告)号:US06882364B1

    公开(公告)日:2005-04-19

    申请号:US09203363

    申请日:1998-12-02

    CPC分类号: H04N9/045 H04N2209/046

    摘要: A solid-state imaging apparatus includes an image pick-up section in which photosensitive devices are arranged in, e.g., a honeycomb G square lattice, RB full-checker pattern due to shifted pixels. Regions void of the photosensitive devices are assumed to be virtual photosensitive devices. A signal processing section generates data for the virtual photosensitive devices by using the data of surrounding photosensitive devices while attaching importance to accurate color reproduction and horizontal and/or vertical resolution. As a result, the number of pixel data are increased in a square lattice arrangement. Therefore, high quality image signals are readily achievable with a smaller number of photosensitive devices than conventional with a conventional apparatus. Interpolation can be executed with the high quality signals to the limit of resolution with an adequate circuit scale. The honeycomb arrangement guarantees the required size of the individual pixel and thereby the sensitivity of the entire apparatus while increasing yield on a production line. False colors particular to a single photosensitive portion can be reduced by, e.g., uniform interpolation. Particularly, when a digital camera is constructed by using an imaging apparatus including optics operable with a silver halide sensitive type of film, false colors can be reduced without resorting to an optical low pass filter.

    摘要翻译: 固态成像装置包括其中感光装置布置在例如蜂窝G方格中的图像拾取部分,由于偏移的像素而导致的RB全检查图案。 假定感光器件无效的区域是虚拟光敏器件。 信号处理部分通过使用周围的感光装置的数据来产生虚拟光敏装置的数据,同时重视准确的色彩再现以及水平和/或垂直分辨率。 结果,像素数据的数量以正方形的格子排列增加。 因此,与常规装置相比,使用较少数量的感光装置可以容易地实现高质量图像信号。 可以使用适当的电路规模将高质量信号执行到分辨率极限。 蜂窝布置保证了单个像素的所需尺寸,从而保证了整个设备的灵敏度,同时提高了生产线上的产量。 通过例如均匀插值可以减少单个感光部分特有的假色。 特别地,当通过使用包括可用卤化银敏感类型的膜操作的光学的成像装置构造数字照相机时,可以减少伪色而不诉诸于光学低通滤光器。

    Dry etching agent and dry etching method using the same
    2.
    发明授权
    Dry etching agent and dry etching method using the same 有权
    干蚀刻剂和干蚀刻法使用该方法

    公开(公告)号:US09093388B2

    公开(公告)日:2015-07-28

    申请号:US13576093

    申请日:2011-01-25

    摘要: A dry etching agent according to the present invention contains (A) a fluorinated propyne represented by the chemical formula: CF3C≡CX where X is H, F, Cl, Br, I, CH3, CFH2 or CF2H; and either of: (B) at least one kind of gas selected from the group consisting of O2, O3, CO, CO2, COCl2 and COF2; (C) at least one kind of gas selected from the group consisting of F2, NF3, Cl2, Br2, I2 and YFn where Y is Cl, Br or I; and n is an integer of 1 to 5; and (D) at least one kind of gas selected from the group consisting of CF4, CHF3, C2F6, C2F5H, C2F4H2, C3F8, C3F4H2, C3ClF3H and C4F8. This dry etching agent has a small environmental load and a wide process window and can be applied for high-aspect-ratio processing without special operations such as substrate excitation.

    摘要翻译: 根据本发明的干蚀刻剂包含(A)由化学式CF 3C≡CX表示的氟化丙炔,其中X为H,F,Cl,Br,I,CH 3,CFH 2或CF 2 H; 和(B)选自O 2,O 3,CO,CO 2,COCl 2和COF 2中的至少一种气体; (C)选自由F2,NF3,Cl2,Br2,I2和YFn组成的组中的至少一种气体,其中Y是Cl,Br或I; n为1〜5的整数。 和(D)选自CF4,CHF3,C2F6,C2F5H,C2F4H2,C3F8,C3F4H2,C3ClF3H和C4F8中的至少一种气体。 这种干蚀刻剂具有小的环境负荷和宽的工艺窗口,并且可以应用于高纵横比处理,而不需要诸如基板激励的特殊操作。

    Sensor shape of a CPP magnetic head for improving the MR ratio
    4.
    发明授权
    Sensor shape of a CPP magnetic head for improving the MR ratio 有权
    用于改善MR比的CPP磁头的传感器形状

    公开(公告)号:US08355224B2

    公开(公告)日:2013-01-15

    申请号:US12011904

    申请日:2008-01-29

    IPC分类号: G11B5/33

    摘要: Embodiments of the present invention help to prevent a head characteristic from being deteriorated by re-deposition or damage which occurs when a sensor film is etched, a track width is narrowed, and the head characteristic is stabilized. According to one embodiment, when it is assumed that the thickness of the sensor film on an air bearing surface is T, and a distance between an end of a medium layer that is interposed between a free layer and a pinned layer which comprise the sensor film and an end of the sensor film lowest portion, a relationship of 1.2×T≦X≦2.5×T is satisfied, and the ends of a pair of magnetic films which are in contact with both sides in the track-width direction through an insulator do not exist in the track central portion from the free layer end. The sensor film is etched while an incident angle of an etching beam is changed over, and when it is assumed that a direction normal to the sensor film surface is the incident angle of 0, etching is conducted under the condition where the incident angle of the etching beam becomes smaller with time.

    摘要翻译: 本发明的实施例有助于通过在传感器膜被蚀刻,轨道宽度变窄并且头部特性稳定时发生的再沉积或损伤来防止头部特性劣化。 根据一个实施例,当假设空气轴承表面上的传感器膜的厚度为T时,介于介于包含传感器膜的自由层和被钉扎层之间的介质层的端部之间的距离 和传感器膜最低部分的一端,满足1.2×T≦̸ X≦̸ 2.5×T的关系,并且通过绝缘体在轨道宽度方向上与两侧接触的一对磁性膜的端部 不存在于自由层末端的轨道中心部分。 在蚀刻光束的入射角变化的同时蚀刻传感器膜,并且当假定与传感器膜表面垂直的方向为入射角为0时,在其入射角 刻蚀光束随时间变小。

    Method for manufacturing semiconductor device
    6.
    发明授权
    Method for manufacturing semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号:US08124544B2

    公开(公告)日:2012-02-28

    申请号:US12477303

    申请日:2009-06-03

    IPC分类号: H01L21/302 H01L21/461

    摘要: It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; forming a resist mask over the second conductive layer; processing the second conductive layer by dry etching with the use of the mask; and processing the first conductive layer by wet etching with the mask left, wherein the etching rate of the second conductive layer is higher than that of the first conductive layer in the dry etching, and wherein the etching rate of the second conductive layer is the same as or more than that of the first conductive layer in the wet etching.

    摘要翻译: 本发明的目的是提供一种包括具有优选形状的布线的半导体器件。 一种制造方法包括以下步骤:形成连接到元件的第一导电层和其上的第二导电层; 在所述第二导电层上形成抗蚀剂掩模; 通过使用掩模的干法蚀刻处理第二导电层; 以及通过左蚀刻法进行湿式蚀刻来处理第一导电层,其中在干蚀刻中第二导电层的蚀刻速率高于第一导电层的蚀刻速率,并且其中第二导电层的蚀刻速率相同 与湿蚀刻中的第一导电层的相同或更多。

    Optical Node Device, Network Control Device, Maintenance-Staff Device, Optical Network, and 3R Relay Implementation Node Decision Method
    10.
    发明申请
    Optical Node Device, Network Control Device, Maintenance-Staff Device, Optical Network, and 3R Relay Implementation Node Decision Method 有权
    光节点设备,网络控制设备,维护人员设备,光网络和3R中继实现节点决策方法

    公开(公告)号:US20090052895A1

    公开(公告)日:2009-02-26

    申请号:US12255923

    申请日:2008-10-22

    IPC分类号: H04J14/00

    摘要: An economical optical network is constituted by effectively using network resources by using the minimum number of, or minimum capacity of 3R repeaters. 3R section information corresponding to topology information on the optical network to which an optical node device itself belongs is stored, and the 3R section information stored is referred so as to autonomously determine whether or not the optical node device itself is an optical node device for implementing the 3R relay when setting an optical path passing through the optical node device itself. Alternatively, when the optical node device itself is a source node, another optical node device for implementing the 3R relay among the other optical node devices through which the optical path from the optical node device itself to the destination node passes is identified, and this identified optical node device is requested to implement the 3R relay when setting an optical path in which the optical node device itself is a source node.

    摘要翻译: 通过使用3R中继器的最小或最小容量有效地使用网络资源来构成经济的光网络。 存储与光节点设备本身所属的光网络上的拓扑信息对应的3R部分信息,并且参考存储的3R部分信息,以便自主地确定光节点设备本身是否是用于实现的光节点设备 当设置通过光节点设备本身的光路时,3R继电器。 或者,当光节点设备本身是源节点时,识别用于在从光节点设备本身到目的地节点通过的光路经过的其他光节点设备中实现3R中继器的另一光节点设备,并且这被识别 要求光节点设备在设置光节点设备本身是源节点的光路时实现3R中继。