摘要:
A current control circuit controls a gate potential of a transistor to equalize a load current IL with a trapezoidal wave signal Sb. The trapezoidal wave signal Sb increases at a constant gradient when a drive command signal Sa turns into H level. Due to increase of load current IL, the transistor starts operating in a linear region and a gate voltage VGS abruptly increases. A saturation state detecting circuit turns a current saturation signal Sc into L level when the gate voltage VGS exceeds a reference voltage Vr. A trapezoidal wave generating circuit stops increase of trapezoidal wave signal Sb. When drive command signal Sa turns into L level, the trapezoidal wave signal Sb decreases at a constant gradient. The load current IL decreases according to reduction of trapezoidal wave signal Sb.
摘要:
A control circuit board has a plurality of connectors that can connect each control module circuit board to control a plurality of in-vehicle equipment. A power supply circuit board has a power supply circuit that controls a power supply from a battery to a controlled equipment of the control module circuit boards connected with each connector. The control circuit board and the power supply circuit board are electrically connected and accommodated in a case. When the control module circuit boards are connected with any connector of the control circuit board, the power supply circuit is controlled by the control module and it becomes possible to control the controlled equipment such as engines.
摘要:
A power MOS transistor formed of an array of source cells and drain cells on an IC chip substrate has a plurality of substrate contact cells, each formed external to the source cells, having respective substrate potential-setting electrodes to which an externally supplied substrate bias voltage can be applied, enabling the substrate potential to be set independently of the source potential of the transistor. It thereby becomes possible to modify the threshold voltage of the transistor or maintain a constant potential difference between the substrate potential and that of a gate input signal. Since the requirement for a substrate contact region within each source cell is eliminated, and the number of substrate contact cells can be fewer than that of the source cells, the chip area occupied by the transistor can be reduced by comparison with a prior art configuration providing such a substrate potential control capability.
摘要:
In order to protect semiconductor switching-devices employed in an H bridge circuit against an over-voltage without using a special protection circuit, a control circuit outputs a control signal to a driving circuit for driving the H bridge circuit in order to turn off FETs serving as the semiconductor switching-devices when an over-voltage detection circuit detects the over-voltage applied to the H bridge circuit.
摘要:
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.
摘要:
A vehicle power system is provided with a switching power supply that generates an operation power for operating a plurality of ECU by stepping down a power supply supplied from at least one of a generator and a battery, and a power distributor that distributes and supplies the operation power generated by the switching power supply to the individual ECUs.
摘要:
A control circuit board has a plurality of connectors that can connect each control module circuit board to control a plurality of in-vehicle equipment. A power supply circuit board has a power supply circuit that controls a power supply from a battery to a controlled equipment of the control module circuit boards connected with each connector. The control circuit board and the power supply circuit board are electrically connected and accommodated in a case. When the control module circuit boards are connected with any connector of the control circuit board, the power supply circuit is controlled by the control module and it becomes possible to control the controlled equipment such as engines.
摘要:
In an electronic unit with a substrate, a control circuit is mounted on the substrate and is configured to execute an operation related to a load. A package encapsulates the control circuit and the substrate. The package has sides around a periphery of the substrate. At least one input terminal for input of a signal externally sent to the electronic unit is disposed on at least one of the plurality of surfaces. At least one output terminal for output of a control signal for controlling the load is disposed on at least another one of the plurality of surfaces. At least one check terminal for input/output of a signal for checking at least the control circuit is disposed on at least another one of the plurality of surfaces.
摘要:
A smart actuator that includes a driving device and an electric actuator such as a DC motor includes a driving current detecting circuit, a driving circuit connected to the electric actuator, a control circuit that controls the driving circuit according to current data provided by the current detecting circuit to supply the electric actuator with a set amount of driving current when the electric actuator has a designed operating condition and a correction circuit that corrects the current data of the driving current if the operating condition is shifted from the designed operating condition to supply the set amount of driving current to the electric actuator.
摘要:
When a semiconductor device having an element isolation structure is formed, first, a trench is formed in a wafer from a principal surface of the wafer, and the trench is filled with an insulating film. Then, the back surface of the wafer is polished so that the insulating film is exposed on the back surface. Accordingly, the insulating film penetrates the wafer from the principal surface to the back surface, thereby performing element isolation of the wafer. It is not necessary to use a bonding wafer. Thus, the method for manufacturing the semiconductor device is simplified.