公开(公告)号：US07109558B2

公开(公告)日：2006-09-19

申请号：US10160098

申请日：2002-06-04

申请人： Takashi Nakano ,  Satoshi Shiraki ,  Yutaka Fukuda ,  Nobumasa Ueda ,  Shoji Miura

发明人： Takashi Nakano ,  Satoshi Shiraki ,  Yutaka Fukuda ,  Nobumasa Ueda ,  Shoji Miura

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7811 ,  H01L23/4824 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1087 ,  H01L29/1095 ,  H01L29/7802 ,  H01L29/7816 ,  H01L29/7835 ,  Y10S257/901

摘要： A power MOS transistor formed of an array of source cells and drain cells on an IC chip substrate has a plurality of substrate contact cells, each formed external to the source cells, having respective substrate potential-setting electrodes to which an externally supplied substrate bias voltage can be applied, enabling the substrate potential to be set independently of the source potential of the transistor. It thereby becomes possible to modify the threshold voltage of the transistor or maintain a constant potential difference between the substrate potential and that of a gate input signal. Since the requirement for a substrate contact region within each source cell is eliminated, and the number of substrate contact cells can be fewer than that of the source cells, the chip area occupied by the transistor can be reduced by comparison with a prior art configuration providing such a substrate potential control capability.

公开(公告)号：US06242792B1

公开(公告)日：2001-06-05

申请号：US09315132

申请日：1999-05-20

申请人： Shoji Miura ,  Satoshi Shiraki ,  Tetsuaki Kamiya ,  Makio Iida

发明人： Shoji Miura ,  Satoshi Shiraki ,  Tetsuaki Kamiya ,  Makio Iida

IPC分类号： H01L2941

CPC分类号： H01L28/20 ,  H01L22/22 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/00

摘要： A laser trimming is favorably performed by a strengthened laser beam energy. A level difference portion having a taper portion that is oblique with respect to the thicknesswise direction of a semiconductor substrate is formed at a surface of a semiconductor substrate. An insulating film is formed thereon and has its surface made flat, and then the thin film element is formed thereon. Thereafter, laser trimming is performed with respect to the thin film resistor. As a result, a state of interference between incident laser beam and reflected laser beam reflected from the interface between the semiconductor substrate and the insulating film is varied to thereby enable the production of a zone where laser beam energy is strengthened and a zone where laser beam energy is weakened.

摘要翻译： 通过强化的激光束能量有利地进行激光修整。 在半导体基板的表面形成有具有相对于半导体基板的厚度方向倾斜的锥形部的电平差部。 在其上形成绝缘膜并使其表面平坦化，然后在其上形成薄膜元件。 此后，相对于薄膜电阻器进行激光微调。 结果，入射激光束与从半导体衬底和绝缘膜之间的界面反射的反射激光束之间的干涉状态变化，从而能够生成激光束能量增强的区域和激光束 能量减弱。

公开(公告)号：US06274452B1

公开(公告)日：2001-08-14

申请号：US08965030

申请日：1997-11-05

申请人： Shoji Miura ,  Satoshi Shiraki ,  Hajime Soga

发明人： Shoji Miura ,  Satoshi Shiraki ,  Hajime Soga

IPC分类号： H01L2120

CPC分类号： H01L28/20 ,  H01L21/84 ,  H01L27/13 ,  H01L2924/0002 ,  H01L2924/00

摘要： After an insulating layer made of BPSG is formed on a diffusion layer, a contact hole is formed to expose the diffusion layer. Then, a first aluminum layer is formed in the contact hole. Then, first and second TEOS layers are formed. Thereafter, a thin film resistor is formed on the second TEOS layer by photo-lithography and etching treatments. In this process, the other parts are covered with the second TEOS layer to prevent being damaged. As a result, occurrence of a leak current at the diffusion layer and the like can be prevented. Further, a third TEOS layer is formed on the thin film resistor, and then a second aluminum layer is formed to be electrically connected to the thin film resistor through a contact hole by an ECR dry etching treatment. In this etching treatment, the thin film resistor is not damaged due to the third TEOS layer.

摘要翻译： 在扩散层上形成由BPSG制成的绝缘层之后，形成接触孔以露出扩散层。 然后，在接触孔中形成第一铝层。 然后，形成第一和第二TEOS层。 此后，通过光刻和蚀刻处理在第二TEOS层上形成薄膜电阻器。 在此过程中，其他部分被第二个TEOS层覆盖，以防止损坏。 结果，可以防止在扩散层等处发生泄漏电流。 此外，在薄膜电阻器上形成第三TEOS层，然后通过ECR干蚀刻处理通过接触孔形成第二铝层与薄膜电阻器电连接。 在这种蚀刻处理中，由于第三TEOS层，薄膜电阻器不会被损坏。

公开(公告)号：US06927167B2

公开(公告)日：2005-08-09

申请号：US10732376

申请日：2003-12-11

申请人： Yutaka Fukuda ,  Naohiko Hirano ,  Chikage Noritake ,  Shoji Miura

发明人： Yutaka Fukuda ,  Naohiko Hirano ,  Chikage Noritake ,  Shoji Miura

IPC分类号： H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/331 ,  H01L21/336 ,  H01L23/433 ,  H01L23/495 ,  H01L29/34 ,  H01L29/41 ,  H01L29/78 ,  H01L21/302

CPC分类号： H01L24/33 ,  H01L21/304 ,  H01L21/30604 ,  H01L23/4334 ,  H01L23/49562 ,  H01L24/32 ,  H01L24/48 ,  H01L29/34 ,  H01L29/66333 ,  H01L2224/05599 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a semiconductor device with a substrate having a device layer and a backside electrode is disclosed. Here, a surface roughness of the substrate is defined as a ratio between a substantial area and a projected area. The method includes polishing and wet-etching a backside surface of the substrate mechanically with using predetermined abrasive grains so that a surface roughness of the backside surface of the substrate becomes to be equal to or larger than 1.04, and forming the backside electrode on the backside surface of the substrate after polishing and wet-etching the backside surface of the substrate.

摘要翻译： 公开了一种具有具有器件层和背面电极的衬底的半导体器件的制造方法。 这里，基板的表面粗糙度被定义为实质面积和投影面积之间的比率。 该方法包括使用预定的磨粒机械地抛光和湿法蚀刻衬底的背面，使得衬底的背面的表面粗糙度等于或大于1.04，并且在背面形成背面电极 抛光后的基板的表面和湿法蚀刻基板的背面。

公开(公告)号：US07468318B2

公开(公告)日：2008-12-23

申请号：US11702498

申请日：2007-02-06

申请人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

发明人： Naohiko Hirano ,  Nobuyuki Kato ,  Takanori Teshima ,  Yoshitsugu Sakamoto ,  Shoji Miura ,  Akihiro Niimi

IPC分类号： H01L21/4763

CPC分类号： H01L24/33 ,  H01L23/482 ,  H01L23/485 ,  H01L23/488 ,  H01L24/32 ,  H01L24/48 ,  H01L2224/05599 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/32245 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/351 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method for manufacturing a mold type semiconductor device is provided. The device includes a semiconductor chip having a semiconductor part and a metallic member connecting to the chip via a conductive layer and a connecting member. The method includes: forming the semiconductor part on a semiconductor substrate so that a cell portion is provided; forming the conductive layer on the substrate; forming a first resist layer to cover a part of the conductive layer corresponding to the cell portion; etching the conductive layer with the first resist layer as a mask so that a first conductive layer is provided; removing the first resist layer and forming a second conductive layer to cover a surface and an edge of the first conductive layer. The second conductive layer has a Young's modulus equal to or larger than the semiconductor substrate.

摘要翻译： 提供了一种用于制造模具型半导体器件的方法。 该器件包括具有半导体部件和通过导电层和连接部件与芯片连接的金属部件的半导体芯片。 该方法包括：在半导体衬底上形成半导体部分以便提供电池部分; 在所述基板上形成所述导电层; 形成第一抗蚀剂层以覆盖对应于所述电池单元部分的所述导电层的一部分; 用第一抗蚀剂层作为掩模蚀刻导电层，从而提供第一导电层; 去除第一抗蚀剂层并形成第二导电层以覆盖第一导电层的表面和边缘。 第二导电层的杨氏模量等于或大于半导体衬底。

公开(公告)号：US07247929B2

公开(公告)日：2007-07-24

申请号：US10808567

申请日：2004-03-25

申请人： Shoji Miura ,  Yoshimi Nakase

发明人： Shoji Miura ,  Yoshimi Nakase

IPC分类号： H01L23/495

CPC分类号： H01L23/4334 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/05553 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012

摘要： A power element package includes a semiconductor chip, radiating members, a mold resin member, a lead terminal for control signals, and lead terminals for large electric current. On a heat accepting surface of the radiating member, an insulating layer and a conductive layer are disposed. The lead terminal for control signals is electrically connected with a gate of the semiconductor chip through the conductive layer. An emitter of the semiconductor chip is electrically connected through a solder connection member with a non-insulating portion of the heat accepting surface.

摘要翻译： 功率元件封装包括半导体芯片，散热构件，模制树脂构件，用于控制信号的引线端子和用于大电流的引线端子。 在散热构件的受热表面上设置绝缘层和导电层。 控制信号的引线端子通过导电层与半导体芯片的栅极电连接。 半导体芯片的发射极通过焊接连接部件与受热面的非绝缘部分电连接。

公开(公告)号：US06972459B2

公开(公告)日：2005-12-06

申请号：US10164313

申请日：2002-06-07

申请人： Shoji Miura ,  Mikimasa Suzuki ,  Akira Kuroyanagi ,  Yoshitaka Nakano

发明人： Shoji Miura ,  Mikimasa Suzuki ,  Akira Kuroyanagi ,  Yoshitaka Nakano

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/32 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L29/7813 ,  H01L29/32 ,  H01L29/7811 ,  H01L2924/0002 ,  H01L2924/00

摘要： A drift layer is formed on a substrate. A base region is formed on the drift layer. A plurality of source regions are formed in a surficial layer of the base region. A plurality of gate electrodes face to the base region and the source region via a gate insulating film. A source electrode is brought into contact with the base region and the source region. A nitrogen cluster containing layer is embedded in the drift layer so as to extend laterally under the base region so that at least part of the drift region is left under the nitrogen cluster containing layer.

摘要翻译： 在基板上形成漂移层。 在漂移层上形成基极区域。 多个源极区域形成在基极区域的表面层中。 多个栅电极经由栅极绝缘膜与基极区域和源极区域面对。 源电极与基极区域和源极区域接触。 含氮簇层包含在漂移层中，以在基底区域横向延伸，使得漂移区的至少一部分留在含氮簇层的下方。

公开(公告)号：US06809348B1

公开(公告)日：2004-10-26

申请号：US09675209

申请日：2000-09-29

申请人： Mikimasa Suzuki ,  Akira Kuroyanagi ,  Takeshi Miyajima ,  Shoji Miura ,  Yutaka Tomatsu ,  Fuminari Suzuki

发明人： Mikimasa Suzuki ,  Akira Kuroyanagi ,  Takeshi Miyajima ,  Shoji Miura ,  Yutaka Tomatsu ,  Fuminari Suzuki

IPC分类号： H01L2974

CPC分类号： H01L29/0696 ,  H01L23/4334 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0207 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/4813 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/49113 ,  H01L2224/49175 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10162 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2224/45099 ,  H01L2924/00

摘要： A semiconductor device has a semiconductor substrate, several cell blocks provided on the semiconductor substrate, several gate electrodes electrically independent of one another and respectively provided in the cell blocks, and several gate pads respectively connected with the gate electrodes. In this construction, the cell blocks can be determined whether they are defective or not by utilizing the gate pads easily. Therefore, the semiconductor device can be operated only with non-defective cell blocks.

摘要翻译： 半导体器件具有半导体衬底，设置在半导体衬底上的几个单元块，彼此电独立且分别设置在单元块中的几个栅极电极以及分别与栅电极连接的多个栅极焊盘。 在这种结构中，可以容易地利用栅极焊盘来确定电池块是否有缺陷。 因此，半导体器件可以仅用无缺陷单元块操作。

公开(公告)号：US5525831A

公开(公告)日：1996-06-11

申请号：US222815

申请日：1994-04-05

申请人： Makoto Ohkawa ,  Makio Iida ,  Shoji Miura ,  Osamu Ishihara ,  Tetsuaki Kamiya

发明人： Makoto Ohkawa ,  Makio Iida ,  Shoji Miura ,  Osamu Ishihara ,  Tetsuaki Kamiya

IPC分类号： H01C17/24 ,  H01L21/02 ,  H01L29/00 ,  H01L23/58 ,  H01L29/76

CPC分类号： H01L28/20 ,  H01C17/24

摘要： A thin film resistor on a semiconductor device may be laser trimmed while reducing the influence of film thickness of a passivation film formed on the thin film resistor. An underlying oxide film consisting of a BPSG film and a silicon oxide film is formed on an Si substrate. A silicon oxide film and a silicon nitride film are formed on the underlying film as a passivation film, and a silicon oxide film is formed on this assembly. The silicon oxide film contributes to controlling a variation of the laser energy absorption rate of a thin film resistor due to an uneven thickness of the silicon nitride film. Thus, it is possible to stabilize adjustment of the resistance value of the thin film resistor with a laser.

摘要翻译： 半导体器件上的薄膜电阻器可以被激光修整，同时减少在薄膜电阻器上形成的钝化膜的膜厚度的影响。 在Si衬底上形成由BPSG膜和氧化硅膜构成的底层氧化物膜。 在作为钝化膜的基底膜上形成氧化硅膜和氮化硅膜，在该组件上形成氧化硅膜。 氧化硅膜有助于控制由于氮化硅膜的不均匀厚度导致的薄膜电阻器的激光能量吸收率的变化。 因此，可以通过激光来稳定薄膜电阻器的电阻值的调整。

公开(公告)号：US20070232108A1

公开(公告)日：2007-10-04

申请号：US11691802

申请日：2007-03-27

申请人： Shoji Miura ,  Emiko Sumimoto

发明人： Shoji Miura ,  Emiko Sumimoto

IPC分类号： H01R13/62

CPC分类号： E03C1/042 ,  E03C1/0403 ,  Y10T137/698 ,  Y10T137/9464

摘要： Disclosed is a water discharge device (1) provided with a device body (2) and a connector (4) and adapted to be attached to a feedwater pipe (6). The water discharge device comprises fixing means (8) for fixing the device body to the connector at a given installation position. The connector has a feedwater-pipe-joining portion (4a) adapted to be joined to the feedwater pipe, and a connector-side engaging thread portion (4b), and the device body has a body-side engaging thread portion (14) positioned in such a manner as to be engaged with the connector-side engaging thread portion once during an operation of attaching the device body to the connector, and located beyond the connector-side engaging thread portion after the device body is fixed at the installation position. The water discharge device of the present invention can reliably prevent falling-off of the device body.

摘要翻译： 公开了一种具有装置主体（2）和连接器（4）的排水装置（1），其适于附接到给水管（6）。 排水装置包括用于在给定的安装位置将装置主体固定到连接器的固定装置（8）。 连接器具有适于与给水管接合的给水管接合部分（4a）和连接器侧接合螺纹部分（4b），并且该装置主体具有主体侧接合螺纹部分（14） ），在将装置本体连接到连接器的操作期间，以与连接器侧接合线部分接合的方式定位，并且在装置主体被固定在安装件之后位于连接器侧接合线部分之外 位置。 本发明的排水装置能够可靠地防止装置主体的脱落。