摘要:
According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.
摘要:
According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.
摘要:
According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.
摘要:
According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.
摘要:
According to the invention, techniques for automatically adjusting for astigmatism in a charged particle beam apparatus. Embodiments according to the present invention can provide a charged particle beam apparatus and an automatic astigmatism adjustment methods capable of automatically correcting astigmatism and a focal point in a relatively short period of time by finding a plurality of astigmatism correction quantities and a focal point correction quantity in a single operation from a relatively small number of 2 dimensional images. Specific embodiments can perform such automatic focusing while minimizing damages inflicted on subject samples. Embodiments include, among others, a charged particle optical system for carrying out an inspection, a measurement and a fabrication with a relatively high degree of accuracy by using a charged particle beam.
摘要:
A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.
摘要:
A pattern inspection method which irradiates a charged particle beam onto a surface of a specimen on which a pattern is formed, simultaneously detecting with plural sensors secondary particles emanated from the surface of the specimen by the irradiation, adding signals outputted from each sensor of the plural sensors which simultaneously detected the secondary particles, obtaining an image of the surface of the specimen on which the pattern is formed from the added signals and processing the image to detect a defect of the pattern.
摘要:
In the detecting system for irradiating the electron beam and detecting the secondary electron thereof, an area of the detector is an important factor for high-speed detection. For the technique of the current electron optical system and detector, a detector of the area larger than a constant area is necessary and detection of 200 Msps or more by receiving limitation on the frequency inversely proportional to the area is substantially difficult. For example, for detection at 400 Msps under the condition that the required area is 4 mm square and the rate for 4 mm square is defined as 150 Msps, four discrete high-speed detectors of 2 mm square are arranged to amplify and then add the signals for A/D conversion. Otherwise, the secondary electron is sequentially inputted to the detector of 8 mm square with the secondary electron deflector, the secondary electron is detected at 100 Msps and arranged after the A/D conversion. In any case, the area of 4 mm square and rate of 400 Msps can be attained.
摘要:
A pattern inspection method and apparatus in which a charged particle beam is irradiated onto a surface of a specimen on which a pattern is formed, plural sensors simultaneously detect secondary particles emanated from the surface of the specimen by the irradiation, signals outputted from each sensor of the plural sensors which simultaneously detect the secondary particles are added, an image of the surface of the specimen on which the pattern is obtained from the added signals, and the image is processed to detect a defect of the pattern.
摘要:
Problems encountered in the conventional inspection method and the conventional apparatus adopting the method are solved by the present invention using an electron beam by providing a novel inspection method and an inspection apparatus adopting the novel method which are capable of increasing the speed to scan a specimen such as a semiconductor wafer.The inspection novel method provided by the present invention comprises the steps of: generating an electron beam; converging the generated electron beam on a specimen by using an objective lens; scanning the specimen by using the converged electron beam; continuously moving the specimen during scanning; detecting charged particles emanating from the specimen at a location between the specimen and the objective lens and converting the detected charged particles into an electrical signal; storing picture information conveyed by the electrical signal; comparing a picture with another by using the stored picture information; and detecting a defect of the specimen.