公开(公告)号：US20100103356A1

公开(公告)日：2010-04-29

申请号：US12528766

申请日：2008-02-28

Applicant: Masashi Yoshimura ,  Takenori Yoshikane ,  Shigeru Nakayama ,  Akihito Fujii

Inventor： Masashi Yoshimura ,  Takenori Yoshikane ,  Shigeru Nakayama ,  Akihito Fujii

IPC: G02F1/1333 ,  C04B35/053

CPC classification number: C04B35/443 ,  C04B35/6455 ,  C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  C04B2111/805 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3272 ,  C04B2235/3418 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/72 ,  C04B2235/77 ,  C04B2235/79 ,  C04B2235/9653 ,  G02B1/02 ,  G02F2001/133311 ,  G02F2201/50 ,  G02F2202/09 ,  G02F2203/01 ,  G02F2203/06 ,  G03B21/005 ,  C04B41/4529 ,  C04B41/5027 ,  C04B41/5055

Abstract: A spinel sintered body has a composition of MgO·nAl2O3 (1.05≦n≦1.30) containing 20 ppm or less of Si element. A production method thereof includes the steps of: forming a compacted body from a spinel powder containing 50 ppm or less of Si element and having a purity of not less than 99.5 mass %; a first sintering step of forming a sintered body having a density of not less than 95% by sintering the compacted body at 1500° C. to 1700° C. in a vacuum; and a second sintering step of subjecting the sintered body to pressurized sintering at 1600° C. to 1800° C.

Abstract translation: 尖晶石烧结体具有含有20ppm以下的Si元素的MgO·nAl 2 O 3（1.05＆nlE; n＆nlE; 1.30）的组成。 其制造方法包括以下步骤：由含有50ppm以下Si元素，纯度为99.5质量％以上的尖晶石粉末形成压实体; 通过在真空中在1500℃〜1700℃下烧结压实体，形成密度不低于95％的烧结体的第一烧结步骤; 以及第二烧结步骤，使烧结体在1600℃至1800℃下进行加压烧结。

公开(公告)号：US20100033849A1

公开(公告)日：2010-02-11

申请号：US12520355

申请日：2007-12-19

Applicant: Shuji Seki ,  Hideki Komiya ,  Susumu Shibasaki ,  Makoto Aihara ,  Masashi Yoshimura

Inventor： Shuji Seki ,  Hideki Komiya ,  Susumu Shibasaki ,  Makoto Aihara ,  Masashi Yoshimura

IPC: G02B7/02 ,  B29D11/00 ,  B28B3/00

CPC classification number: C03B11/08 ,  C03B2215/404 ,  C03B2215/49 ,  C03B2215/73 ,  Y02P40/57

Abstract: An optical element being high in productivity and capable of ensuring a large bonding area, and a production method of the optical element. At mold opening when a top part (120) provided with a round portion (121) moves upward, a preform is placed in an inner space the interior of which is formed by a rectangular sleeve (110) and the round portion (131) of a bottom part (130). At mold clamping when the top part (120) moves downward, the preform is pressurized. That is, a convex lens portion is transferred by the concave curved surface (122) and the edge surface (123) of the round portion (121) and the concave curved surface (132) and the edge surface (133) of the round portion (131). The four side surfaces of an optical element (1) are transferred by the inner wall surface (110a) of the sleeve (110). Further, part of the preform jumps out into the gap portion (140) between the outer peripheral surfaces (121a, 131a) of the round portions (121, 131) and the inner wall surface (110a) of the sleeve (110) to thereby form a protrusion portion of the optical element (1). The optical element (1) has a marker (2) formed on the top surface (11a) of its body, and the marker (2) may be formed to extend linearly along the optical axis of lens portions (12, 16). The marker (2) is formed to protrude from the top surface (11a). The side surface (11b) and the side surface (11c) of the body may be formed such that the separating distance between the side surface (11b) and the side surface (11c) gradually increases toward a bottom surface (11d).

Abstract translation: 光学元件生产率高，能够确保大的接合面积的光学元件，以及光学元件的制造方法。 在模具打开时，当具有圆形部分（121）的顶部（120）向上移动时，预制件被放置在内部空间中，内部空间由矩形套筒（110）和圆形部分（131）形成， 底部（130）。 在顶部（120）向下移动时的模具夹紧中，预制件被加压。 也就是说，凸透镜部分通过凹曲面（122）和圆形部分（121）的边缘表面（123）和凹曲面（132）和圆形部分的边缘表面（133） （131）。 光学元件（1）的四个侧表面被套筒（110）的内壁表面（110a）转移。 此外，一部分预成型件弹出到圆筒部（121,131）的外周面（121a，131a）与套筒（110）的内壁面（110a）之间的间隙部（140） 形成光学元件（1）的突出部分。 光学元件（1）具有形成在其本体的顶表面（11a）上的标记（2），并且标记（2）可以形成为沿透镜部分（12,16）的光轴线性延伸。 标记（2）形成为从顶面（11a）突出。 主体的侧面（11b）和侧面（11c）可以形成为使得侧面（11b）与侧面（11c）之间的分离距离朝向底面（11d）逐渐增大。

公开(公告)号：US07288151B2

公开(公告)日：2007-10-30

申请号：US10999338

申请日：2004-11-29

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Ryu Hirota

IPC: C30B11/14

CPC classification number: C30B29/403 ,  C30B11/00 ,  C30B11/04 ,  C30B29/406

Abstract: There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

Abstract translation: 提供了一种制造III族氮化物晶体的方法，其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外，还提供了一种III族氮化物晶体的制造方法，其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长，其中 熔体的表面和基板的表面设定为至多50mm。

公开(公告)号：US07132061B2

公开(公告)日：2006-11-07

申请号：US10466838

申请日：2002-01-17

Applicant: Masashi Yoshimura

Inventor： Masashi Yoshimura

IPC: C04B35/58 ,  B29C67/00 ,  H05B6/00

CPC classification number: C04B35/58007 ,  B82Y30/00 ,  C04B35/58014 ,  C04B35/584 ,  C04B35/593 ,  C04B35/6261 ,  C04B35/6303 ,  C04B35/64 ,  C04B41/009 ,  C04B41/53 ,  C04B41/91 ,  C04B2111/00353 ,  C04B2111/94 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3878 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/666 ,  C04B2235/77 ,  C04B2235/781 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/963 ,  C04B35/58

Abstract: A conductive silicon nitride composite sintered body having an average grain size of 100 nm or less and whose relative roughness (Ra) after electric discharge machining is 0.3 μm or less can be obtained by grinding/mixing a silicon nitride powder and a metal powder together until the average particle size of the silicon nitride powder becomes 30 nm or less, and subsequently by molding and sintering. It is preferable that the crushing/mixing is continued until it is apparent that a peak of added metal in an X-ray diffraction pattern has disappeared during the crushing/mixing.

Abstract translation: 通过将氮化硅粉末和金属粉末一起研磨/混合，可以得到平均粒径为100nm以下，并且放电加工后的相对粗糙度（Ra）为0.3μm以下的导电性氮化硅复合烧结体，直到 氮化硅粉末的平均粒径为30nm以下，随后通过成型和烧结。 优选的是，破碎/混合是持续的，直到在粉碎/混合期间X射线衍射图中添加的金属的峰值已经消失。

公开(公告)号：US06964560B2

公开(公告)日：2005-11-15

申请号：US10490870

申请日：2001-12-14

Applicant: Masashi Yoshimura

Inventor： Masashi Yoshimura

IPC: B65G53/24 ,  F04C18/16 ,  F04C23/00 ,  F04C25/02 ,  F04C29/00 ,  F04C29/04 ,  F01C1/16 ,  F01C1/24

CPC classification number: F04C29/0021 ,  F04C18/16 ,  F04C23/00 ,  F04C29/042 ,  F05C2201/0442

Abstract: An object of this invention is to prevent drop of life of a bearing by an axial force when using a pump as a compressor. In a vacuum pump 1 compressing and discharging gas in a direction of a rotor axis by rotation of screw rotors 3, 4 engaged together which are supported rotatably in a casing 2, balance pistons 13, 14 are disposed on shafts 6, 7 of said screw rotors at inlet side of said casing. The balance pistons separate a receiving section 17 at area of the screw rotor and a pressurizing section 16 at area of the balance piston, and a thrust force of the screw rotors at a pressurizing condition is canceled by acting the discharge pressure in the pressurizing section. The pump is used as a compressor when the discharge pressure is acted on the balance pistons 13, 14. When the pump is used as a vacuum pump, air at discharge side is sucked as cool air through a cooler toward a place near to the discharge side of the receiving section 17 at area of the screw rotor.

Abstract translation: 本发明的目的是在使用泵作为压缩机时防止轴承的寿命下降。 在真空泵1中，通过可旋转地支撑在壳体2中的螺旋转子3,4的接合的螺杆转子3,4的旋转，在转子轴线的方向上压缩和排出气体，平衡活塞13,14设置在所述螺杆的轴6,7上 所述壳体入口侧的转子。 平衡活塞在螺杆转子的区域和在平衡活塞的区域处的加压部16分离接收部17，并且通过作用加压部中的排出压力来消除螺杆转子在加压条件下的推力。 当排出压力作用在平衡活塞13,14上时，泵用作压缩机。 当泵用作真空泵时，在螺旋转子的区域处，排出侧的空气通过冷却器作为冷空气被吸入靠近接收部17的排出侧的位置。

公开(公告)号：US20050070388A1

公开(公告)日：2005-03-31

申请号：US10944756

申请日：2004-09-21

Applicant: Hirofumi Miyata ,  Shinichiro Nishikawa ,  Masashi Yoshimura

Inventor： Hirofumi Miyata ,  Shinichiro Nishikawa ,  Masashi Yoshimura

IPC: F16H7/08 ,  F16H7/12 ,  F16H7/20 ,  F16H55/36

CPC classification number: F16H55/36 ,  F16H7/12 ,  F16H7/20 ,  F16H2007/0865 ,  F16H2055/363

Abstract: A hollow cylindrical pulley body 5 is carried rotatably by a hollow cylindrical shaft member 11. A support rod 8 is inserted in the shaft member 11 to support the shaft member 11 for rocking motion about a pivot axis C2 orthogonal to the shaft member 11. The pivot axis C2 is inclined backward in the direction of belt travel with respect to the direction of load on the shaft member 11. With this configuration, when the drive belt 3 deviates to one side, the pulley body 5 is immediately angularly moved so that it is inclined with a level difference with respect to the direction of load on the shaft member 11 and is positioned obliquely relative to the drive belt 3, thereby producing a force of returning the drive belt 3 to its normal position.

Abstract translation: 中空的圆筒形滑轮主体5由中空圆柱形轴构件11可旋转地承载。支撑杆8插入轴构件11中，以支撑轴构件11，以围绕与轴构件11正交的枢转轴线C2摆动。 枢轴线C2相对于轴构件11上的负载方向在带行进方向上向后倾斜。利用这种构造，当驱动带3偏离到一侧时，滑轮体5立即成角度地移动，使得 相对于轴构件11上的负载方向倾斜，并且相对于传动带3倾斜定位，从而产生将传动带3返回其正常位置的力。

公开(公告)号：US06844282B2

公开(公告)日：2005-01-18

申请号：US10311604

申请日：2002-04-18

Applicant: Masashi Yoshimura

Inventor： Masashi Yoshimura

IPC: C04B35/583 ,  C04B35/584 ,  C04B35/591 ,  C04B35/593 ,  C04B35/596 ,  C04B35/577

CPC classification number: C04B35/58071 ,  B82Y30/00 ,  C04B35/58014 ,  C04B35/58064 ,  C04B35/583 ,  C04B35/584 ,  C04B35/587 ,  C04B35/591 ,  C04B35/593 ,  C04B35/62615 ,  C04B35/62842 ,  C04B35/6303 ,  C04B35/64 ,  C04B2235/3217 ,  C04B2235/3225 ,  C04B2235/3804 ,  C04B2235/3813 ,  C04B2235/3826 ,  C04B2235/3843 ,  C04B2235/3856 ,  C04B2235/386 ,  C04B2235/3873 ,  C04B2235/3886 ,  C04B2235/404 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/46 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5454 ,  C04B2235/549 ,  C04B2235/666 ,  C04B2235/781 ,  C04B2235/80 ,  C04B2235/85 ,  C04B2235/96

Abstract: The present invention provides a silicon nitride based sintered body having excellent mechanical properties from room temperature to a medium low temperature range, a low friction coefficient and excellent wear resistance. The sintered body comprises silicon nitride, titanium compounds and boron nitride or silicon nitride, titanium based nitride and/or carbide, silicon carbide and graphite and/or carbon; and has a mean particle diameter of 100 nm or less and a friction coefficient under lubricant free conditions of 0.3 or less.

Abstract translation: 本发明提供一种从室温到中等低温范围具有优异的机械性能，低摩擦系数和优异的耐磨性的氮化硅基烧结体。 烧结体包括氮化硅，钛化合物和氮化硼或氮化硅，钛基氮化物和/或碳化物，碳化硅和石墨和/或碳; 平均粒径为100nm以下，无润滑条件下的摩擦系数为0.3以下。

公开(公告)号：US5585055A

公开(公告)日：1996-12-17

申请号：US442661

申请日：1995-05-17

Applicant: Masashi Yoshimura ,  Koichi Niihara

Inventor： Masashi Yoshimura ,  Koichi Niihara

IPC: C04B35/505 ,  C04B35/645 ,  B28B3/00

CPC classification number: C04B35/645 ,  C04B35/505

Abstract: The strength of a composite sintered body including yttrium oxide is improved. A composite ceramics sintered body includes a matrix of yttrium oxide and silicon carbide particles dispersed within the matrix. A compound oxide phase including yttrium and silicon is present at the surface of the sintered body. A sintered body is obtained by compression-molding mixed powder including yttrium oxide powder and silicon carbide powder in an inert gas atmosphere of at least 1550.degree. C. The sintered body is subjected to a heat treatment for at least 0.5 hour and not more than 12 hours in an atmosphere including oxygen gas in the range of at least 900.degree. C. and less than 1200.degree. C.

Abstract translation: 提高了包含氧化钇的复合烧结体的强度。 复合陶瓷烧结体包括分散在基质内的氧化钇和碳化硅颗粒的基体。 在烧结体的表面存在包含钇和硅的复合氧化物相。 通过在至少1550℃的惰性气体气氛中将含有氧化钇粉末和碳化硅粉末的混合粉末压缩成型而获得烧结体。烧结体经受至少0.5小时且不超过12的热处理 在包括氧气在900℃以上且小于1200℃的气氛中的小时。

公开(公告)号：US20130149847A1

公开(公告)日：2013-06-13

申请号：US13696873

申请日：2011-12-21

Applicant: Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

Inventor： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  C03C10/0018 ,  C04B35/106 ,  C04B35/16 ,  C04B35/185 ,  C04B35/481 ,  C04B35/486 ,  C04B35/488 ,  C04B35/645 ,  C04B35/6455 ,  C04B2235/3225 ,  C04B2235/3244 ,  C04B2235/3246 ,  C04B2235/3463 ,  C04B2235/9607 ,  C30B23/025 ,  C30B25/183 ,  C30B29/406 ,  H01L21/02002 ,  H01L21/02422 ,  H01L21/02436 ,  H01L21/02458 ,  H01L21/02658 ,  H01L21/02664

Abstract: The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate including a support substrate dissoluble in hydrofluoric acid and a single crystal film arranged on a side of a main surface of the support substrate, a coefficient of thermal expansion in the main surface of the support substrate being more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal, forming a GaN-based film on a main surface of the single crystal film arranged on the side of the main surface of the support substrate, and removing the support substrate by dissolving the support substrate in hydrofluoric acid. Thus, the method of manufacturing a GaN-based film capable of efficiently obtaining a GaN-based film having a large main surface area, less warpage, and good crystallinity, as well as a composite substrate used therefor are provided.

Abstract translation: 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括可溶于氢氟酸的支撑基板和布置在支撑基板的主表面侧的单晶膜，热膨胀系数 支撑基板的主表面比GaN晶体大0.8倍以上且小于热膨胀系数的1.2倍，在配置在该基板侧的单晶膜的主面上形成GaN基膜 支撑基板的主表面，并且通过将支撑基板溶解在氢氟酸中来除去支撑基板。 因此，提供了能够有效地获得具有较大主表面积，较少翘曲和良好结晶度的GaN基膜的GaN基膜的制造方法以及用于其的复合基板。

公开(公告)号：US20080283968A1

公开(公告)日：2008-11-20

申请号：US11579645

申请日：2005-03-30

Applicant: Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

Inventor： Takatomo Sasaki ,  Yusuke Mori ,  Masashi Yoshimura ,  Fumio Kawamura ,  Seiji Nakahata ,  Ryu Hirota

IPC: H01L29/20 ,  C03B9/00

CPC classification number: C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

Abstract: A method of manufacturing group III-nitride semiconductor crystal includes the steps of accommodating an alloy containing at least a group III-metal element and an alkali metal element in a reactor, introducing a nitrogen-containing substance in the reactor, dissolving the nitrogen-containing substance in an alloy melt in which the alloy has been melted, and growing group III-nitride semiconductor crystal is provided. The group III-nitride semiconductor crystal attaining a small absorption coefficient and an efficient method of manufacturing the same, as well as a group III-nitride semiconductor device attaining high light emission intensity can thus be provided.

Abstract translation: 一种制造III族氮化物半导体晶体的方法包括以下步骤：在反应器中容纳至少含有III族金属元素和碱金属元素的合金，将含氮物质引入反应器中，将含氮物质 提供合金熔融的合金中的物质，以及生长III族氮化物半导体晶体。 因此可以提供获得小吸收系数的III族氮化物半导体晶体及其制造方法，以及获得高发光强度的III族氮化物半导体器件。