公开(公告)号：USD651565S1

公开(公告)日：2012-01-03

申请号：US29354620

申请日：2010-01-27

申请人： Masashi Yura ,  Shinichi Fujino ,  Yusuke Takagi ,  Toshiya Satoh ,  Kinya Nakatsu ,  Takeshi Tokuyama

设计人： Masashi Yura ,  Shinichi Fujino ,  Yusuke Takagi ,  Toshiya Satoh ,  Kinya Nakatsu ,  Takeshi Tokuyama

公开(公告)号：USD651170S1

公开(公告)日：2011-12-27

申请号：US29354621

申请日：2010-01-27

申请人： Masashi Yura ,  Shinichi Fujino ,  Yusuke Takagi ,  Toshiya Satoh ,  Kinya Nakatsu ,  Takeshi Tokuyama

设计人： Masashi Yura ,  Shinichi Fujino ,  Yusuke Takagi ,  Toshiya Satoh ,  Kinya Nakatsu ,  Takeshi Tokuyama

公开(公告)号：US20130279230A1

公开(公告)日：2013-10-24

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H02M7/00 ,  H05K7/20

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×εr, where a relative permittivity of the insulating member is Er and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 消耗功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×ε的关系，其中绝缘部件的相对介电常数为Er，浪涌电压 在导体板和散热板之间产生的功率半导体器件的ON / OFF开关操作是Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US07973405B2

公开(公告)日：2011-07-05

申请号：US12784331

申请日：2010-05-20

申请人： Yoshimasa Takahashi ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

发明人： Yoshimasa Takahashi ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

IPC分类号： H01L23/34

CPC分类号： H01L25/072 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H02M1/08 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.

摘要翻译： 以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的 可靠性。 还提供了一种包括这种集成电路的功率转换器。 构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个 构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。 构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。 因此，制造驱动器IC2。

公开(公告)号：US20100225363A1

公开(公告)日：2010-09-09

申请号：US12784331

申请日：2010-05-20

申请人： Yoshimasa TAKAHASHI ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

发明人： Yoshimasa TAKAHASHI ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

IPC分类号： H03K3/00

CPC分类号： H01L25/072 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H02M1/08 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.

摘要翻译： 以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的 可靠性。 还提供了一种包括这种集成电路的功率转换器。 构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个 构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。 构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。 因此，制造驱动器IC2。

公开(公告)号：US20070008679A1

公开(公告)日：2007-01-11

申请号：US10545021

申请日：2004-02-13

申请人： Yoshimasa Takahasi ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

发明人： Yoshimasa Takahasi ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

IPC分类号： H02B1/00

CPC分类号： H01L25/072 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H02M1/08 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.

摘要翻译： 以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的 可靠性。 还提供了一种包括这种集成电路的功率转换器。 构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个 高耐压IC芯片200。 构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213 n中。 构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223 p和垂直n沟道MOS-FET芯片223 n中。 因此，制造驱动器IC2。

公开(公告)号：US5682044A

公开(公告)日：1997-10-28

申请号：US591420

申请日：1996-01-19

申请人： Takashige Tamamushi ,  Kimihiro Muraoka ,  Yoshiaki Ikeda ,  Keun Sam Lee ,  Naohiro Shimizu ,  Masashi Yura ,  Kinji Yoshioka

发明人： Takashige Tamamushi ,  Kimihiro Muraoka ,  Yoshiaki Ikeda ,  Keun Sam Lee ,  Naohiro Shimizu ,  Masashi Yura ,  Kinji Yoshioka

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L29/7416

摘要： The present invention provides a reverse conducting (RC) thyristor of a planar-gate structure for low-and-medium power use which is relatively simple in construction because of employing a planar structure for each of thyristor and diode regions, permits simultaneous formation of the both region and have high-speed performance and a RC thyristor of a buried-gate or recessed-gate structure which has a high breakdown voltage by the use of a buried-gate or recessed-gate structure, permits simultaneous formation of thyristor and diode regions and high-speed, high current switching performance, and the RC thyristor of the planar-gate structure has a construction which comprises an SI thyristor or miniaturized GTO of a planar-gate structure in the thyristor region and an SI diode of a planar structure in the diode region, the diode region having at its cathode side a Schottky contact between n emitters or diode cathode shorted region and the thyristor region having at its anode side an SI anode shorted structure formed by p.sup.+ anode layers, wave-shaped anode layers or anode n.sup.+ layers; in the case of a high breakdown device, an n buffer layer is added; similarly the RC thyristor of the buried-gate or recessed-gate structure has a construction which comprises an SI thyristor of a buried-gate or recessed-gate structure at the thyristor region and an SI diode of the buried or recessed structure.

摘要翻译： 本发明提供了一种用于中低功率使用的平面栅极结构的反向导通（RC）晶闸管，由于采用晶体管和二极管区域中的每一个的平面结构，其结构相对简单，允许同时形成 具有高速性能和通过使用掩埋栅极或凹入栅极结构具有高击穿电压的掩埋栅极或凹入栅极结构的RC晶闸管，允许同时形成晶闸管和二极管区域 和高速，高电流开关性能，并且平面栅极结构的RC晶闸管具有在晶闸管区域中包括SI晶闸管或平面栅极结构的小型化GTO以及平面结构的SI二极管的结构 二极管区域，二极管区域在其阴极侧具有n个发射极或二极管阴极短路区域之间的肖特基接触，并且在其阳极侧具有SI a的晶闸管区域 由p +阳极层，波形阳极层或阳极n +层形成的短路结构; 在高击穿装置的情况下，添加n缓冲层; 类似地，埋入栅极或凹入栅极结构的RC晶闸管具有包括在晶闸管区域处的掩埋栅极或凹入栅极结构的SI晶闸管和埋入或凹陷结构的SI二极管的结构。

公开(公告)号：US09326425B2

公开(公告)日：2016-04-26

申请号：US13996640

申请日：2011-12-07

申请人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

发明人： Tokihito Suwa ,  Yujiro Kaneko ,  Masashi Yura ,  Nobutake Tsuyuno ,  Toshiaki Ishii ,  Junpei Kusukawa

IPC分类号： H05K7/02 ,  H05K7/20 ,  H01L23/433 ,  H01L25/16 ,  H02M7/00 ,  H01L23/473 ,  H01L25/18 ,  H01L23/36 ,  H01L25/11 ,  H01L23/367

CPC分类号： H05K7/20509 ,  H01L23/36 ,  H01L23/3677 ,  H01L23/4334 ,  H01L23/473 ,  H01L25/072 ,  H01L25/115 ,  H01L25/16 ,  H01L25/18 ,  H01L2224/32245 ,  H01L2224/40137 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H02M7/003 ,  H05K7/209 ,  H05K7/20927 ,  H01L2924/00

摘要： Provided is a power conversion device including an insulating member manufactured such that a thickness di (mm) of the insulating member made from a resin, provided between a heat dissipating surface of a conductor plate bonded to a power semiconductor device and a heat dissipating plate that dissipates the heat of the power semiconductor device satisfies a relation of di>(1.36×10-8×Vt2+3.4×10-5×Vt−0.015)×∈r, where a relative permittivity of the insulating member is ∈r and a surge voltage generated between the conductor plate and the heat dissipating plate accompanied by an ON/OFF switching operation of the power semiconductor device is Vt (V). The conductor plate of the power semiconductor device, the insulating member, and the heat dissipating plate are bonded by thermocompression bonding.

摘要翻译： 本发明提供一种电力转换装置，其特征在于，包括绝缘部件，其制造成使得由与树脂形成的绝缘部件的厚度di（mm）设置在与功率半导体装置接合的导体板的散热面与散热板之间， 散发功率半导体器件的热量满足di>（1.36×10-8×Vt2 + 3.4×10-5×Vt-0.015）×∈r的关系，其中绝缘构件的相对介电常数为∈r，a 伴随功率半导体器件的ON / OFF开关操作的导体板和散热板之间产生的浪涌电压为Vt（V）。 功率半导体器件的导体板，绝缘构件和散热板通过热压接而接合。

公开(公告)号：US07763974B2

公开(公告)日：2010-07-27

申请号：US10545021

申请日：2004-02-13

申请人： Yoshimasa Takahashi ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

发明人： Yoshimasa Takahashi ,  Naoki Sakurai ,  Masashi Yura ,  Masahiro Iwamura ,  Mutsuhiro Mori

IPC分类号： H01L23/34

CPC分类号： H01L25/072 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L25/162 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48139 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01039 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/30107 ,  H02M1/08 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： An integrated circuit for driving a semiconductor device, which is adaptable for demands, such as a higher output (larger current), a higher voltage, and a smaller loss, and has a small size, is produced at a low cost, and has high reliability. A power converter including such an integrated circuit is also provided. Circuit elements constituting a drive section of an upper arm drive circuit 212, a level shift circuit 20 including a current sensing circuit 210, a drive section of a lower arm drive circuit 222, and a drive signal processing circuit 224 are integrated and built in one high withstand voltage IC chip 200. Circuit elements constituting a final output stage buffer section 213 of the upper arm drive circuit 212 are built in a vertical p-channel MOS-FET chip 213p and a vertical n-channel MOS-FET chip 213n. Circuit elements constituting a final output stage buffer section 223 of the lower arm drive circuit 222 are built in a vertical p-channel MOS-FET chip 223p and a vertical n-channel MOS-FET chip 223n. Thus, a driver IC 2 is fabricated.

摘要翻译： 以低成本生产用于驱动半导体器件的集成电路，其具有较高的输出（较大的电流），更高的电压和更小的损耗，并且尺寸更小的需求，并且具有高的 可靠性。 还提供了一种包括这种集成电路的功率转换器。 构成上臂驱动电路212的驱动部的电路元件，包括电流检测电路210的电平移动电路20，下臂驱动电路222的驱动部以及驱动信号处理电路224被一体化并内置于一个 构成上臂驱动电路212的最终输出级缓冲器部分213的电路元件内置在垂直p沟道MOS-FET芯片213p和垂直n沟道MOS-FET芯片213n中。 构成下臂驱动电路222的最终输出级缓冲部分223的电路元件内置在垂直p沟道MOS-FET芯片223p和垂直n沟道MOS-FET芯片223n中。 因此，制造驱动器IC2。

公开(公告)号：US06426521B1

公开(公告)日：2002-07-30

申请号：US09614274

申请日：2000-07-12

申请人： Masashi Yura

发明人： Masashi Yura

IPC分类号： H01L2974

CPC分类号： H01L29/7392 ,  H01L29/42312

摘要： In a semiconductor device of self-extinguish type, in which a channel constituting a current path is controlled by a control voltage applied to a gate electrode, the channel is constructed between an n type cathode region 12 formed in one major surface of n silicon substrate 11 and p type anode region 15 formed in the other major surface of the silicon substrate is opened and closed by the control voltage applied to a gate region 14 as well as a guard region. The guard region is formed by p+ type guard regions 18 and 19 provided adjacent to the channels, and a p type auxiliary guard region 20 formed between the p+ type guard regions 18 and 19 and having a lower impurity concentration than that of the guard regions 18 and 19. During the conduction state, electrons are hardly diffuse laterally underneath the guard region, and therefore upon the turn-off operation, electrons can be taken out at a high speed. Since electrons are taken out uniformly, the electrical field is not concentrated and the semiconductor device is effectively prevented from being broken.

摘要翻译： 在自熄灭型的半导体器件中，其中构成电流路径的沟道由施加到栅电极的控制电压控制，该沟道被构造在形成在n个硅衬底的一个主表面中的n型阴极区12之间 形成在硅衬底的另一个主表面中的p型阳极区域15被施加到栅极区域14的防护电压以及保护区域而被打开和闭合。 保护区域由与通道相邻设置的p +型保护区域18和19形成，并且形成在p +型保护区域18和19之间并且具有比防护区域18和19的杂质浓度低的p型辅助保护区域20。 在导通状态期间，电子几乎不在保护区域的下方横向扩散，因此在关断操作时，可以高速地取出电子。 由于均匀地取出电子，所以电场不集中，有效地防止了半导体器件的破损。