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公开(公告)号：US20110303890A1
公开(公告)日：2011-12-15
申请号：US13142504
申请日：2011-06-28
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/165
摘要： An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.
摘要翻译： 电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。 在第一电极和接合处建立材料。 材料的至少一部分是矩阵区域。 电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。 电流传导通道在其中具有受控的掺杂剂分布。
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公开(公告)号：US08502188B2
公开(公告)日：2013-08-06
申请号：US13142504
申请日：2011-06-28
IPC分类号： H01L29/02
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/165
摘要： An electrically actuated device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle, thereby forming a junction therebetween. A material is established on the first electrode and at the junction. At least a portion of the material is a matrix region. A current conduction channel extends substantially vertically between the first and second electrodes, and is defined in at least a portion of the material positioned at the junction. The current conduction channel has a controlled profile of dopants therein.
摘要翻译： 电驱动装置包括第一电极和第二电极，其以非零角度与第一电极交叉，从而在它们之间形成接合部。 在第一电极和接合处建立材料。 材料的至少一部分是矩阵区域。 电流传导通道在第一和第二电极之间基本垂直地延伸，并且限定在位于结处的材料的至少一部分中。 电流传导通道在其中具有受控的掺杂剂分布。
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公开(公告)号：US08547727B2
公开(公告)日：2013-10-01
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachan , R. Stanley Williams , Marco Florentino , Shih-Yuan Wang , Nathaniel J. Quitoriano , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
IPC分类号： G11C11/00
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device includes a memristive matrix, mobile dopants moving with the memristive matrix in response to programming electrical fields and remaining stable within the memristive matrix in the absence of the programming electrical fields; and at least three electrodes surrounding the memristive matrix. A method for tuning electrical circuits with a memristive device includes measuring a circuit characteristic and applying a programming voltage to the memristive device which causes motion of dopants within the memristive device to alter the circuit characteristic. A method for increasing a switching speed of a memristive device includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions and then switching the memristive device to a conductive state by applying a programming voltage which rapidly merges the two conductive regions to form a conductive pathway between a source electrode and a drain electrode.
摘要翻译： 忆阻路由设备包括忆阻矩阵，响应于编程电场而与忆阻矩阵一起移动的移动掺杂物，并且在没有编程电场的情况下在忆阻矩阵内保持稳定; 以及围绕忆阻矩阵的至少三个电极。 一种用忆阻器件调谐电路的方法包括测量电路特性并将编程电压施加到忆阻器件，其使得忆阻器件内的掺杂剂的运动改变电路特性。 用于增加忆阻器件的切换速度的方法包括将来自两个几何分离位置的掺杂剂绘制成紧密接近形成两个导电区域，然后通过施加快速合并两个导电区域的编程电压将忆阻器件切换到导通状态 在源电极和漏电极之间形成导电路径。
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公开(公告)号：US20110182107A1
公开(公告)日：2011-07-28
申请号：US13119932
申请日：2008-12-12
申请人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
发明人： Wei Wu , John Paul Strachen , R. Stanely Williams , Marco Florentino , Shih-Yuan Wang , Hans S. Cho , Julien Borghetti , Sagi Varghese Mathai
CPC分类号： H01L45/145 , H01L27/2472 , H01L45/08 , H01L45/1206 , H01L45/1226 , H01L45/14 , H01L45/146 , H01L45/147
摘要： A memristive routing device (200) includes a memristive matrix (240), mobile dopants (255) moving with the memristive matrix (240) in response to programming electrical fields and remaining stable within the memristive matrix (240) in the absence of the programming electrical fields; and at least three electrodes (210, 220, 230) surrounding the memristive matrix (240). A method for tuning electrical circuits with a memristive device (900) includes measuring a circuit characteristic (805) and applying a programming voltage to the memristive device (900) which causes motion of dopants within the memristive device (900) to alter the circuit characteristic (805). A method for increasing a switching speed of a memristive device (1300) includes drawing dopants from two geometrically separated locations into close proximity to form two conductive regions (1380, 1390) and then switching the memristive device (1300) to a conductive state by applying a programming voltage which rapidly merges the two conductive regions (1380, 1390) to form a conductive pathway between a source electrode (1310) and a drain electrode (1320).
摘要翻译： 忆阻路由设备（200）包括忆阻矩阵（240），移动掺杂物（255）响应于编程电场而与忆阻矩阵（240）一起移动，并且在没有编程的情况下保持稳定在忆阻矩阵（240）内 电场; 以及围绕所述忆阻矩阵（240）的至少三个电极（210,220,230）。 一种利用忆阻器件（900）来调谐电路的方法包括测量电路特性（805）并将编程电压施加到忆阻器件（900），其使得忆阻器件（900）内的掺杂剂的运动改变电路特性 （805）。 提高忆阻装置（1300）的切换速度的方法包括将来自两个几何分离的位置的掺杂剂绘制成紧邻形成两个导电区域（1380,1390），然后通过应用将所述忆阻装置（1300）切换到导电状态 编程电压，其迅速地合并两个导电区域（1380,1390）以在源电极（1310）和漏电极（1320）之间形成导电通路。
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5.发明授权公开(公告)号：US08569900B2
公开(公告)日：2013-10-29
申请号：US13383183
申请日：2009-07-20
IPC分类号： H01L23/58
CPC分类号： B81B1/00 , B81B2201/0214
摘要： A nanowire device includes a nanowire having differently functionalized segments. Each of the segments is configured to interact with a species to modulate the conductance of a segment. The nanowire is grown from a single catalyst and the segments include a first segment at a non-linear angle from a second segment.
摘要翻译： 纳米线器件包括具有不同功能化片段的纳米线。 每个片段被配置为与物种相互作用以调节片段的电导。 纳米线从单个催化剂生长，并且所述段包括与第二段非线性角度的第一段。
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6.发明授权公开(公告)号：US08022408B2
公开(公告)日：2011-09-20
申请号：US12659776
申请日：2010-03-22
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Do-Young Kim , Huaxiang Yin , Xiaoxin Zhang
IPC分类号： H01L29/04
CPC分类号： H01L29/0673 , B82Y10/00 , H01L29/0665 , H01L29/66772 , H01L29/78654 , H01L29/78684 , H01L29/78696 , Y10S977/762 , Y10S977/814 , Y10S977/90 , Y10S977/932 , Y10S977/943
摘要： Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film.
摘要翻译： 示例性实施例涉及具有其中可以在基板上形成具有相对较细的线宽的结晶纳米线膜的结构的晶体纳米线基板及其制造方法，以及使用其制造薄膜晶体管的方法 。 制造结晶纳米线基板的方法可以包括制备基板，在基板上形成绝缘膜，在绝缘膜上形成硅膜，将绝缘膜和硅膜图案化成带状，减小线宽 绝缘膜通过底切蚀刻绝缘膜的至少一个侧面，并且通过使硅膜熔化和结晶而在绝缘膜的上表面上形成自对准硅纳米线膜。
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公开(公告)号：US20110012222A1
公开(公告)日：2011-01-20
申请号：US12505377
申请日：2009-07-17
申请人： Hans S. Cho , Theodore I. Kamins
发明人： Hans S. Cho , Theodore I. Kamins
IPC分类号： H01L31/0352 , H01L21/268 , H01L31/0368 , H01L31/0376
CPC分类号： H01L21/268 , H01L31/02363 , H01L31/028 , H01L31/0296 , H01L31/0304 , H01L31/03046 , H01L31/0312 , H01L31/035281 , H01L31/03682 , H01L31/03685 , H01L31/07 , H01L31/072 , H01L31/075 , H01L31/1804 , H01L31/182 , H01L31/1872 , Y02E10/544 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method of making a crystalline semiconductor structure provides a photonic device by employing low thermal budget annealing process. The method includes annealing a non-single crystal semiconductor film formed on a substrate to form a polycrystalline layer that includes a transition region adjacent to a surface of the film and a relatively thicker columnar region between the transition region and the substrate. The transition region includes small grains with random grain boundaries. The columnar region includes relatively larger columnar grains with substantially parallel grain boundaries that are substantially perpendicular to the substrate. The method further includes etching the surface to expose the columnar region having an irregular serrated surface.
摘要翻译： 制造晶体半导体结构的方法通过采用低热预算退火工艺提供光子器件。 该方法包括退火形成在衬底上的非单晶半导体膜以形成多晶层，该多晶层包括与膜的表面相邻的过渡区域和过渡区域与衬底之间相对较厚的柱状区域。 过渡区域包括具有随机晶界的小颗粒。 柱状区域包括具有基本上垂直于衬底的基本上平行的晶界的相对较大的柱状晶粒。 该方法还包括蚀刻表面以暴露具有不规则锯齿状表面的柱状区域。
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8.发明申请Microlens, an image sensor including a microlens, method of forming a microlens and method for manufacturing an image sensor 失效微透镜，包括微透镜的图像传感器，形成微透镜的方法和用于制造图像传感器的方法公开(公告)号：US20100208368A1
公开(公告)日：2010-08-19
申请号：US12662607
申请日：2010-04-26
申请人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
发明人： Huaxiang Yin , Hyuck Lim , Young-soo Park , Wenxu Xianyu , Hans S. Cho
IPC分类号： G02B7/02
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327
摘要： A microlens, an image sensor including the microlens, a method of forming the microlens and a method of manufacturing the image sensor are provided. The microlens includes a polysilicon pattern, having a cylindrical shape, formed on a substrate, and a round-type shell portion enclosing the polysilicon pattern. The microlens may further include a filler material filling an interior of the shell portion, or a second shell portion covering the first shell portion. The method of forming a microlens includes forming a silicon pattern on a semiconductor substrate having a lower structure, forming a capping film on the semiconductor substrate over the silicon pattern, annealing the silicon pattern and the capping film altering the silicon pattern to a polysilicon pattern having a cylindrical shape and the capping film to a shell portion for a round-type microlens, and filling an interior of the shell portion with a lens material through an opening between the semiconductor substrate and an edge of the shell portion. The image sensor includes a microlens formed by a similar method and a photodiode having a cylindrical shape.
摘要翻译： 提供微透镜，包括微透镜的图像传感器，形成微透镜的方法和制造图像传感器的方法。 微透镜包括形成在基板上的具有圆柱形状的多晶硅图案和包围多晶硅图案的圆形外壳部分。 微透镜还可以包括填充壳体部分的内部的填充材料或覆盖第一壳体部分的第二壳体部分。 形成微透镜的方法包括在具有较低结构的半导体衬底上形成硅图案，在硅图案上的半导体衬底上形成覆盖膜，使硅图案和覆盖膜退火，将硅图案改变为具有 圆筒形，并且封盖膜用于圆形微透镜的外壳部分，并且通过半导体基板和外壳部分的边缘之间的开口用透镜材料填充外壳部分的内部。 图像传感器包括通过类似方法形成的微透镜和具有圆柱形状的光电二极管。
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公开(公告)号：US20100041214A1
公开(公告)日：2010-02-18
申请号：US12461315
申请日：2009-08-07
申请人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Huaxiang Yin
发明人： Hans S. Cho , Takashi Noguchi , Wenxu Xianyu , Xiaoxin Zhang , Huaxiang Yin
IPC分类号： H01L21/20
CPC分类号： H01L21/02636 , H01L21/02381 , H01L21/0242 , H01L21/02532 , H01L21/02686
摘要： A high quality single crystal substrate and a method of fabricating the same are provided. The method of fabricating a single crystal substrate includes: forming an insulator on a substrate; forming a window in the insulator, the window exposing a portion of the substrate; forming an epitaxial growth silicon or germanium seed layer on the portion of the substrate exposed through the window; depositing a silicon or germanium material layer, which are crystallization target material layers, on the epitaxial growth silicon 6r germanium seed layer and the insulator; and crystallizing the crystallization target material layer by melting and cooling the crystallization target material layer.
摘要翻译： 提供了高质量的单晶基板及其制造方法。 制造单晶衬底的方法包括：在衬底上形成绝缘体; 在所述绝缘体中形成窗口，所述窗口暴露所述基板的一部分; 在通过窗户暴露的衬底的部分上形成外延生长硅或锗种子层; 在外延生长硅6r锗种子层和绝缘体上沉积作为结晶靶材料层的硅或锗材料层; 并且通过熔化和冷却结晶化目标材料层来使结晶目标材料层结晶。
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公开(公告)号：US20150076438A1
公开(公告)日：2015-03-19
申请号：US14396406
申请日：2012-07-31
申请人： Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
发明人： Hans S. Cho , Janice H. Nickel , R. Stanley Williams , Jaesung Roh , Jinwon Park , Choi Hyejung , Moonsig Joo , Jiwon Moon , Changgoo Lee , Yongsun Sohn , Jeongtae Kim
IPC分类号： H01L45/00
CPC分类号： H01L45/1233 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/124 , H01L45/1253 , H01L45/146 , H01L45/1641 , H01L45/1675 , H01L45/1691
摘要： Examples of the present disclosure include non-volatile resistive memory cells and methods of forming the same. An example of a non-volatile resistive memory cell includes a first portion of the non-volatile resistive memory cell formed as a vertically-extending structure on a first electrode, where the first portion comprises at least one memristive material across a width of the vertically-extending structure. The non-volatile resistive memory cell also includes a second portion formed as a vertically-extending memristive material structure on at least one sidewall of the first portion.
摘要翻译： 本公开的实例包括非易失性电阻存储器单元及其形成方法。 非易失性电阻性存储单元的示例包括在第一电极上形成为垂直延伸结构的非易失性电阻性存储单元的第一部分，其中第一部分包括跨越垂直宽度的至少一个阻聚材料 延伸结构。 非易失性电阻性存储单元还包括在第一部分的至少一个侧壁上形成为垂直延伸的忆阻材料结构的第二部分。
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