公开(公告)号：US07470601B2

公开(公告)日：2008-12-30

申请号：US11543983

申请日：2006-10-06

申请人： Michael Bauer ,  Ludwig Heitzer ,  Eric Kuerzel ,  Peter Strobel

发明人： Michael Bauer ,  Ludwig Heitzer ,  Eric Kuerzel ,  Peter Strobel

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/49816 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor device includes a semiconductor chip and an adhesive film between the back side of the semiconductor chip and a chip pad of a leadframe. The adhesive film includes a film core and adhesive layers that cover both sides of the film core. The film core includes a brittle, fragile hard material.

摘要翻译： 半导体器件包括半导体芯片和半导体芯片的背面与引线框的芯片焊盘之间的粘合膜。 粘合膜包括膜芯和覆盖膜芯的两侧的粘合剂层。 薄膜芯包括脆性脆弱的硬质材料。

公开(公告)号：US20070082463A1

公开(公告)日：2007-04-12

申请号：US11543983

申请日：2006-10-06

申请人： Michael Bauer ,  Ludwig Heitzer ,  Eric Kuerzel ,  Peter Strobel

发明人： Michael Bauer ,  Ludwig Heitzer ,  Eric Kuerzel ,  Peter Strobel

IPC分类号： H01L21/30 ,  H01L21/44 ,  H01L21/46

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/49816 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2224/05599 ,  H01L2224/274 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85399 ,  H01L2224/92247 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/0781 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor device includes a semiconductor chip and an adhesive film between the back side of the semiconductor chip and a chip pad of a leadframe. The adhesive film includes a film core and adhesive layers that cover both sides of the film core. The film core includes a brittle, fragile hard material.

摘要翻译： 半导体器件包括半导体芯片和半导体芯片的背面与引线框的芯片焊盘之间的粘合膜。 粘合膜包括膜芯和覆盖膜芯的两侧的粘合剂层。 薄膜芯包括脆性脆弱的硬质材料。

公开(公告)号：US07592236B2

公开(公告)日：2009-09-22

申请号：US11582551

申请日：2006-10-18

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/6715 ,  H01L23/3128 ,  H01L24/27 ,  H01L24/48 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/838 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A structure of joining material is applied to the back surfaces of semiconductor chips in manufacturing semiconductor devices. The joining material is applied, in finely metered and structured form via a joining material jet appliance, to the back surfaces of the semiconductor chips of a divided semiconductor wafer.

摘要翻译： 在制造半导体器件中，将半导体芯片的背面施加接合材料的结构。 接合材料通过接合材料喷射器具以精细计量和结构化的形式施加到分开的半导体晶片的半导体芯片的背面。

公开(公告)号：US07547645B2

公开(公告)日：2009-06-16

申请号：US11504782

申请日：2006-08-16

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/20

CPC分类号： H01L21/56 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for coating a structure that includes at least one semiconductor chip involves electrostatically depositing coating particles on the areas of the structure to be coated. The coating particles are first applied to a carrier and the latter is electrostatically charged with the coating particles. The structure including at least one semiconductor chip is charged electrostatically to a polarity opposite to the carrier. The carrier and/or the structure are then moved towards one another in the direction of an area of the structure to be coated until the coating particles jump to the areas of the structure to be coated and adhere there. The coating particles are liquefied by heating the area with coating particles to form a coating.

摘要翻译： 涂覆包括至少一个半导体芯片的结构的方法包括在待涂覆结构的区域上静电沉积涂层颗粒。 首先将涂层颗粒施加到载体上，然后将涂层颗粒带电涂覆颗粒。 包括至少一个半导体芯片的结构被静电充电到与载体相反的极性。 然后将载体和/或结构沿待涂覆结构的区域的方向彼此移动，直到涂层颗粒跳到要涂覆的结构的区域并粘附在那里。 涂覆颗粒通过用涂覆颗粒加热该区域而液化以形成涂层。

公开(公告)号：US07294916B2

公开(公告)日：2007-11-13

申请号：US11465547

申请日：2006-08-18

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L23/02

CPC分类号： H01L23/49562 ,  H01L21/3081 ,  H01L21/78 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.

摘要翻译： 公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。

公开(公告)号：US07662664B2

公开(公告)日：2010-02-16

申请号：US11780786

申请日：2007-07-20

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L23/02 ,  H01L21/00

CPC分类号： H05K1/141 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8388 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0102 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/3025 ,  H05K3/3436 ,  H05K2201/049 ,  H05K2201/10515 ,  H05K2201/1053 ,  H05K2201/10734 ,  H01L2924/00 ,  H01L2924/3512

摘要： An electronic circuit in a package-on-package configuration includes: a lower subassembly with a first electronic element, a first wiring carrier, a first housing with a first redistribution layer and an arrangement of solder balls disposed on the first redistribution layer and an upper subassembly with a second electronic element mounted on the lower subassembly. A method for producing the electronic circuit in a package-on-package configuration includes: adhering an upper side of the first electronic element to an underside of the first redistribution layer via a radiation-crosslinking thermoplastic adhesive.

摘要翻译： 封装在封装构造中的电子电路包括：具有第一电子元件的下部子组件，第一布线载体，具有第一再分布层的第一壳体和布置在第一再分布层上的焊球布置，以及上部 子组件具有安装在下部子组件上的第二电子元件。 一种封装在封装结构中的电子电路的制造方法，其特征在于，包括：通过辐射交联热塑性粘合剂将第一电子元件的上侧粘接到第一再分布层的下侧。

公开(公告)号：US20070087532A1

公开(公告)日：2007-04-19

申请号：US11582551

申请日：2006-10-18

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/00

CPC分类号： H01L21/67132 ,  H01L21/6715 ,  H01L23/3128 ,  H01L24/27 ,  H01L24/48 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2224/838 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A structure of joining material is applied to the back surfaces of semiconductor chips in manufacturing semiconductor devices. The joining material is applied, in finely metered and structured form via a joining material jet appliance, to the back surfaces of the semiconductor chips of a divided semiconductor wafer.

摘要翻译： 在制造半导体器件中，将半导体芯片的背面施加接合材料的结构。 接合材料通过接合材料喷射器具以精细计量和结构化的形式施加到分开的半导体晶片的半导体芯片的背面。

公开(公告)号：US07919857B2

公开(公告)日：2011-04-05

申请号：US11867132

申请日：2007-10-04

申请人： Michael Bauer ,  Peter Strobel ,  Jens Pohl ,  Christian Stuempfl ,  Ludwig Heitzer

发明人： Michael Bauer ,  Peter Strobel ,  Jens Pohl ,  Christian Stuempfl ,  Ludwig Heitzer

IPC分类号： H01L23/06 ,  H01L23/552 ,  H01L21/00

CPC分类号： G01L19/0069 ,  G01L19/147 ,  H01L23/295 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/15311 ,  H01L2924/3025 ,  H01L2924/00

摘要： A plastic housing includes plastic external faces and the underside of the plastic housing comprises external contact areas on which external contacts are arranged. The plastic external faces are covered by a closed metal layer apart from the underside, wherein the boundary layer between plastic external faces and the closed metal layer includes exposed electrically conductive inclusions of the plastic of the housing.

摘要翻译： 塑料外壳包括塑料外表面，并且塑料外壳的下侧包括外部接触区域，外部接触件布置在其上。 塑料外表面被与下侧隔开的封闭金属层覆盖，其中塑料外表面和封闭金属层之间的边界层包括外壳的塑料的露出的导电夹杂物。

公开(公告)号：US07749864B2

公开(公告)日：2010-07-06

申请号：US11866853

申请日：2007-10-03

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/30

CPC分类号： H01L23/49562 ,  H01L21/3081 ,  H01L21/78 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.

摘要翻译： 公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。

公开(公告)号：US20080242057A1

公开(公告)日：2008-10-02

申请号：US11866853

申请日：2007-10-03

申请人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

发明人： Michael Bauer ,  Ludwig Heitzer ,  Jens Pohl ,  Peter Strobel ,  Christian Stuempfl

IPC分类号： H01L21/304

CPC分类号： H01L23/49562 ,  H01L21/3081 ,  H01L21/78 ,  H01L23/49524 ,  H01L24/32 ,  H01L24/40 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/32245 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/37099

摘要： A semiconductor device with a thinned semiconductor chip and a method for producing the latter is disclosed. In one embodiment, the thinned semiconductor chip has a top side with contact areas and a rear side with a rear side electrode. In this case, the rear side electrode is cohesively connected to a chip pad of a circuit carrier via an electrically conductive layer. In another embodiment, the thinned semiconductor chips of this semiconductor device according to the invention have low-microdefect edge side regions with semiconductor element structures and edge sides patterned by etching technology.

摘要翻译： 公开了一种具有薄型半导体芯片的半导体器件及其制造方法。 在一个实施例中，变薄的半导体芯片具有具有接触区域的顶侧和具有后侧电极的后侧。 在这种情况下，后侧电极经由导电层与电路载体的芯片焊盘粘结地连接。 在另一个实施例中，根据本发明的该半导体器件的薄化半导体芯片具有具有半导体元件结构和通过蚀刻技术图案化的边缘侧的低微细边缘侧区域。