Method for determining chemical content of complex structures using X-ray microanalysis
    1.
    发明授权
    Method for determining chemical content of complex structures using X-ray microanalysis 失效
    使用X射线微量分析法确定复合结构的化学成分的方法

    公开(公告)号:US07197110B2

    公开(公告)日:2007-03-27

    申请号:US10999083

    申请日:2004-11-29

    IPC分类号: G01N23/223 G01N23/06

    摘要: A method for identifying hazardous substances in a printed wiring assembly having a plurality of discrete components, using micro X-ray fluorescence spectroscopy. A micro X-ray fluorescence spectroscopy (μ-XRF) and/or X-ray Absorption Fine Structure (XAFS) spectroscopy are used as detecting analyzers, to identify materials of concern in an electronic device. The device or assembly to be examined is analyzed by moving it in the X, Y, and Z directions under a probe in response to information in a reference database, to determine elemental composition at selected locations on the assembly, the probe positioned at an optimum analytical distance from each selected location for analysis. The determined elemental composition at each selected location is then correlated to the reference database, and the detected elements are assigned to the various components in the assembly.

    摘要翻译: 一种使用微X射线荧光光谱法鉴定具有多个分立元件的印刷线路组件中的有害物质的方法。 使用微X射线荧光光谱(μ-XRF)和/或X射线吸收精细结构(XAFS)光谱作为检测分析仪,以识别电子设备中关注的材料。 要检查的设备或组件是通过在探针下在X,Y和Z方向上移动来响应于参考数据库中的信息来分析的,以确定组件上选定位置处的元素组成,探针定位在最佳状态 从每个选定位置的分析距离进行分析。 然后将确定的每个选定位置的元素组成与参考数据库相关联,并将检测到的元素分配给组件中的各种组件。

    Organic semiconductor device having an oxide layer
    3.
    发明授权
    Organic semiconductor device having an oxide layer 有权
    具有氧化物层的有机半导体器件

    公开(公告)号:US06677607B2

    公开(公告)日:2004-01-13

    申请号:US10057367

    申请日:2002-01-25

    IPC分类号: H01L3524

    摘要: A semiconductor device having a flexible or rigid substrate (11) having a gate electrode (21), a source electrode (61 and 101), and a drain electrode (62 and 102) formed thereon and organic semiconductor material (51, 81, and 91) disposed at least partially thereover. The gate electrode (21) has a thin dielectric layer 41 formed thereabout through oxidation. In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 一种具有柔性或刚性基板(11)的半导体器件,具有栅电极(21),源电极(61,101)和形成在其上的漏极电极(62和102)和有机半导体材料(51,81和 91)至少部分地设置在其上。 栅电极(21)具有通过氧化形成在其周围的薄介电层41。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    Organic semiconductor and method
    4.
    发明授权
    Organic semiconductor and method 失效
    有机半导体和方法

    公开(公告)号:US06603141B2

    公开(公告)日:2003-08-05

    申请号:US10034337

    申请日:2001-12-28

    IPC分类号: H01L2700

    摘要: A semiconductor device formed of a flexible or rigid substrate (10) having a gate electrode (11), a source electrode (12), and a drain electrode (13) formed thereon and organic semiconductor material (14) disposed at least partially thereover. With appropriate selection of material, the gate electrode (11) will form a Schottky junction and an ohmic contact will form between the organic semiconductor material (14) and each of the source electrode (12) and drain electrode (13). In many of the embodiments, any of the above elements can be formed through contact or non-contact printing. Sizing of the resultant device can be readily scaled to suit various needs.

    摘要翻译: 由具有形成在其上的栅电极(11),源电极(12)和漏电极(13)的柔性或刚性基板(10)形成的半导体器件和至少部分地设置在其上的有机半导体材料(14)构成。 通过适当选择材料,栅电极(11)将形成肖特基结,在有机半导体材料(14)与源电极(12)和漏电极(13)之间形成欧姆接触。 在许多实施例中,可以通过接触或非接触印刷形成任何上述元件。 可以容易地缩放所得到的装置的尺寸以适应各种需要。

    Method for forming a thick-film resistor and thick-film resistor formed thereby
    5.
    发明授权
    Method for forming a thick-film resistor and thick-film resistor formed thereby 失效
    用于形成由此形成的厚膜电阻器和厚膜电阻器的方法

    公开(公告)号:US06171921B2

    公开(公告)日:2001-01-09

    申请号:US09093007

    申请日:1998-06-05

    IPC分类号: B05D512

    摘要: A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer. Thereafter, subsequent processing is preformed to include the photoimageable layer as a permanent photoimageable layer of a circuit board, with the resistive mass and appropriate terminations forming a resistor in the permanent photoimageable layer.

    摘要翻译: 一种用于形成可以精确获得尺寸的厚膜电阻器的方法,从而产生精确的电阻值。 该方法包括在基底上提供优选形成多层结构的永久介电层的可光成像层。 在光致成像层的表面中光刻限定开口,然后用电阻材料过满,以形成具有位于围绕开口的可光成象层的表面上的多余部分的电阻质量。 在固化之后,电阻材料的表面在可光成像层的表面下凹陷,电阻质量块的过剩部分优选通过研磨或类似的操作被去除,使得电阻质量的横向尺寸被确定 通过可光成像层中的开口的横向尺寸。 此后,进行后续处理,以将可光成像层作为电路板的永久可光成像层,其中电阻质量和合适的端接在永久可光成像层中形成电阻器。

    METHOD AND APPARATUS FOR SELECTIVELY PATTERNING FREE STANDING QUANTUM DOT (FSQDT) POLYMER COMPOSITES
    6.
    发明申请
    METHOD AND APPARATUS FOR SELECTIVELY PATTERNING FREE STANDING QUANTUM DOT (FSQDT) POLYMER COMPOSITES 有权
    用于选择自由定型量子点(FSQDT)聚合物复合材料的方法和装置

    公开(公告)号:US20090017268A1

    公开(公告)日:2009-01-15

    申请号:US11776087

    申请日:2007-07-11

    IPC分类号: B32B3/10 G03F7/20 C08F2/50

    CPC分类号: G03F7/038 Y10T428/24802

    摘要: Free standing quantum do (FSQDT) polymer composites and a method and apparatus for patterning the FSQDT polymer composites is provided. The method for patterning the FSQDT polymer composites includes creating a solution including FSQDTs where each of the FSQDTs has a plurality of reactive ligands chemically attached thereto. The method further includes providing a substrate, forming a coated substrate by coating a surface of the substrate with a layer of the solution, and providing a photo mask having a predetermined pattern thereon transparent to a predetermined radiation over the coated substrate. Finally, the method includes exposing a portion of the coated substrate to the predetermined radiation passing through the mask to pattern a polymer matrix in the predetermined pattern while adhering the FSQDTs to the polymer matrix to form the FSQDT polymer composite.

    摘要翻译: 提供了自由立体量子(FSQDT)聚合物复合材料和用于图案化FSQDT聚合物复合材料的方法和设备。 图案化FSQDT聚合物复合材料的方法包括产生包括FSQDT的溶液,其中每个FSQDT具有与其化学连接的多个反应性配体。 该方法还包括提供基底,通过用溶液层涂覆基底的表面形成涂覆的基底,并且提供具有预定图案的光掩模,其上涂覆的基底上的预定辐射透明。 最后,该方法包括将涂覆的基底的一部分暴露于通过掩模的预定辐射,以将FSQDTs粘附到聚合物基质上以形成FSQDT聚合物复合材料,从而以预定图案形成聚合物基质。

    Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites
    8.
    发明授权
    Method and apparatus for selectively patterning free standing quantum DOT (FSQDT) polymer composites 有权
    用于选择性构图自由置换量子DOT(FSQDT)聚合物复合材料的方法和装置

    公开(公告)号:US07989153B2

    公开(公告)日:2011-08-02

    申请号:US11776087

    申请日:2007-07-11

    IPC分类号: G03F7/00 G03F1/00

    CPC分类号: G03F7/038 Y10T428/24802

    摘要: Free standing quantum do (FSQDT) polymer composites and a method and apparatus for patterning the FSQDT polymer composites is provided. The method for patterning the FSQDT polymer composites includes creating a solution including FSQDTs where each of the FSQDTs has a plurality of reactive ligands chemically attached thereto. The method further includes providing a substrate, forming a coated substrate by coating a surface of the substrate with a layer of the solution, and providing a photo mask having a predetermined pattern thereon transparent to a predetermined radiation over the coated substrate. Finally, the method includes exposing a portion of the coated substrate to the predetermined radiation passing through the mask to pattern a polymer matrix in the predetermined pattern while adhering the FSQDTs to the polymer matrix to form the FSQDT polymer composite.

    摘要翻译: 提供了自由立体量子(FSQDT)聚合物复合材料和用于图案化FSQDT聚合物复合材料的方法和设备。 图案化FSQDT聚合物复合材料的方法包括产生包括FSQDT的溶液,其中每个FSQDT具有与其化学连接的多个反应性配体。 该方法还包括提供基底,通过用溶液层涂覆基底的表面形成涂覆的基底,并且提供具有预定图案的光掩模,其上涂覆的基底上的预定辐射透明。 最后,该方法包括将涂覆的基底的一部分暴露于通过掩模的预定辐射,以将FSQDTs粘附到聚合物基质上以形成FSQDT聚合物复合材料,从而以预定图案形成聚合物基质。

    Method for forming a thick-film resistor and thick-film resistor formed thereby
    10.
    发明授权
    Method for forming a thick-film resistor and thick-film resistor formed thereby 失效
    用于形成由此形成的厚膜电阻器和厚膜电阻器的方法

    公开(公告)号:US06229098B1

    公开(公告)日:2001-05-08

    申请号:US09621148

    申请日:2000-07-21

    IPC分类号: H05K116

    摘要: A process for forming a thick-film resistor whose dimensions can be accurately obtained, thereby yielding a precise resistance value. The method includes providing on a substrate a photoimageable layer that preferably forms a permanent dielectric layer of a multilayer structure. An opening is photodefined in the surface of the photoimageable layer, and then overfilled with an electrically-resistive material to form a resistive mass having an excess portion that lies on the surface of the photoimageable layer surrounding the opening. Following curing which causes the surface of the resistive material to become recessed below the surface of the photoimageable layer, the excess portion of the resistive mass is removed, preferably by abrading or a similar operation, such that the lateral dimensions of the resistive mass are determined by the lateral dimensions of the opening in the photoimageable layer. Thereafter, subsequent processing is performed to include the photoimageable layer as a permanent photoimageable layer of a circuit board, with the resistive mass and appropriate terminations forming a resistor in the permanent photoimageable layer.

    摘要翻译: 一种用于形成可以精确获得尺寸的厚膜电阻器的方法,从而产生精确的电阻值。 该方法包括在基底上提供优选形成多层结构的永久介电层的可光成像层。 在光致成像层的表面中光刻限定开口,然后用电阻材料过满,以形成具有位于围绕开口的可光成象层的表面上的多余部分的电阻质量。 在固化之后,电阻材料的表面在可光成像层的表面下凹陷,电阻质量块的过剩部分优选通过研磨或类似的操作被去除,使得电阻质量的横向尺寸被确定 通过可光成像层中的开口的横向尺寸。 此后,进行后续处理,将可光成像层作为电路板的永久可光成像层,其中电阻质量和适当的端接在永久可光成像层中形成电阻器。