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公开(公告)号：US20080038936A1
公开(公告)日：2008-02-14
申请号：US11877480
申请日：2007-10-23
IPC分类号： H01L21/469
CPC分类号： C23C16/45523 , C23C16/24 , C23C16/345 , C23C16/45525 , C23C16/56 , H01L21/0217 , H01L21/02247 , H01L21/02252 , H01L21/3144 , H01L21/31612 , H01L21/31662 , H01L21/3185
摘要： Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
摘要翻译： 在反应室中进行多个顺序的工艺以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体在衬底上沉积硅层。 然后通过氮化硅层形成氮化硅层。 通过重复这些步骤，形成期望厚度的氮化硅层。
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公开(公告)号：US20050118837A1
公开(公告)日：2005-06-02
申请号：US10623482
申请日：2003-07-18
IPC分类号： C23C16/24 , C23C16/34 , C23C16/44 , C23C16/455 , C23C16/56 , H01L21/314 , H01L21/316 , H01L21/318 , H01L23/58 , H01L21/31 , H01L21/469
CPC分类号： C23C16/45523 , C23C16/24 , C23C16/345 , C23C16/45525 , C23C16/56 , H01L21/0217 , H01L21/02247 , H01L21/02252 , H01L21/3144 , H01L21/31612 , H01L21/31662 , H01L21/3185
摘要： Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
摘要翻译： 在反应室中进行多个顺序的工艺以形成包括氮化硅层的超高质量含硅化合物层。 在优选实施例中，使用丙硅烷作为硅前体在衬底上沉积硅层。 然后通过氮化硅层形成氮化硅层。 通过重复这些步骤，形成期望厚度的氮化硅层。
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公开(公告)号：US08197597B2
公开(公告)日：2012-06-12
申请号：US12305534
申请日：2007-11-15
IPC分类号： C30B25/10 , C30B25/14 , C01B21/06 , B01F3/02 , C23C16/08 , C23C16/28 , C23C16/34 , C23C16/448 , C23C16/455 , C01B21/072 , C23C16/452
CPC分类号： C30B25/10 , C23C16/303 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45593 , C30B25/14 , C30B29/406 , C30B35/00 , H01L21/0254 , H01L21/0262
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours. A system for conducting the method is also provided.
摘要翻译： 本发明涉及半导体处理设备和方法的领域，并且特别提供用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料的方法和设备，以供使用 作为用于外延沉积的衬底，用于晶片等。 在优选的实施方案中，这些方法被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。 具体地说，该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为另外的反应物在反应室中反应，条件足以在一个或多个反应器上提供持续的大量制造半导体材料 底物，气态III族前体以50g III族元素/小时的质量流量连续提供至少48小时。 还提供了一种用于进行该方法的系统。
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公开(公告)号：US20090283029A1
公开(公告)日：2009-11-19
申请号：US12305495
申请日：2007-11-15
IPC分类号： C30B25/02 , C23C16/00 , C23C16/513
CPC分类号： C30B25/14 , C23C16/4412 , C30B25/08 , C30B25/165 , C30B29/40 , C30B29/403
摘要： Methods for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, or for wafers. The equipment and methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. The method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber to form the semiconductor material; removing exhaust gases including unreacted Group III precursor, unreacted Group V component and reaction byproducts; and heating the exhaust gases to a temperature sufficient to reduce condensation thereof and enhance manufacture of the semiconductor material. Advantageously, the exhaust gases are heated to sufficiently avoid condensation to facilitate sustained high volume manufacture of the semiconductor material.
摘要翻译： 用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料，用作外延沉积的基底或用于晶片的方法。 该设备和方法被优化用于生产III-N（氮）化合物半导体晶片，并专门用于生产GaN晶片。 该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为反应室中的另一反应物反应以形成半导体材料; 去除废气，包括未反应的III族前体，未反应的V族组分和反应副产物; 并将废气加热到足以减少其冷凝的温度，并且增强半导体材料的制造。 有利地，排气被加热以充分避免冷凝，以促进半导体材料的持续高容量制造。
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公开(公告)号：US06544900B2
公开(公告)日：2003-04-08
申请号：US09992215
申请日：2001-11-14
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , C23C16/44 , H01L21/28017 , H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L29/513 , H01L29/518
摘要： Multiple sequential processes are conducted in situ in a single-wafer processing chamber, particularly for forming ultrathin dielectric stacks of high quality. The chamber exhibits single-pass, laminar gas flow, facilitating safe and clean sequential processing. Furthermore, a remote plasma source widens process windows, permitting isothermal sequential processing and thereby reducing the transition time for temperature ramping between in situ steps. In exemplary processes, extremely thin interfacial silicon oxide, nitride and/or oxynitride is grown, followed by in situ silicon nitride deposition. Cleaning, anneal and electrode deposition can also be conducted in situ, reducing transition time without commensurate loss in reaction rates.
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6.发明申请公开(公告)号：US20090205563A1
公开(公告)日：2009-08-20
申请号：US12305553
申请日：2007-11-16
CPC分类号： C30B25/14 , C23C16/303 , C23C16/4401 , C23C16/4412 , C23C16/481 , C23C16/54 , C30B29/403 , H01L21/0254 , H01L21/0262 , Y10T117/10 , Y10T117/1008
摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译： 本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。 具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。 特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。
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7.发明授权公开(公告)号：US08545628B2
公开(公告)日：2013-10-01
申请号：US12305553
申请日：2007-11-16
CPC分类号： C30B25/14 , C23C16/303 , C23C16/4401 , C23C16/4412 , C23C16/481 , C23C16/54 , C30B29/403 , H01L21/0254 , H01L21/0262 , Y10T117/10 , Y10T117/1008
摘要： The present invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. In particular, the invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译： 本发明涉及为生产III-N（氮）化合物半导体晶片而专门用于生产GaN晶片的方法和装置。 具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。 特别地，本发明提供了用于限制用于系统中的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法，以及通过使一定量的气态反应形成单晶III-V族半导体材料的方法 III族前体作为一种反应物，一定量的气态V族组分作为反应室中的另一反应物。
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公开(公告)号：US20120048182A1
公开(公告)日：2012-03-01
申请号：US13288396
申请日：2011-11-03
CPC分类号： C30B25/10 , C23C16/303 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45593 , C30B25/14 , C30B29/406 , C30B35/00 , H01L21/0254 , H01L21/0262
摘要： The invention relates to a method and system for epitaxial deposition of a Group III-V semiconductor material that includes gallium. The method includes reacting an amount of a gaseous Group III precursor having one or more gaseous gallium precursors as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber; and supplying sufficient energy to the gaseous gallium precursor(s) prior to their reacting so that substantially all such precursors are in their monomer forms. The system includes sources of the reactants, a reaction chamber wherein the reactants combine to deposit Group III-V semiconductor material, and one or more heating structures for heating the gaseous Group III precursors prior to reacting to a temperature to decompose substantially all dimers, trimers or other molecular variations of such precursors into their component monomers.
摘要翻译： 本发明涉及用于外延沉积包括镓的III-V族III族半导体材料的方法和系统。 该方法包括使一定量的具有一种或多种气态镓前体的气态III族前体作为一种反应物与一定量的气态V族组分作为反应室中的另一反应物反应; 并在其反应之前向气态镓前体提供足够的能量，使得基本上所有这些前体都是其单体形式。 该系统包括反应物的源，其中反应物结合以沉积III-V族半导体材料的反应室，以及一个或多个加热结构，用于在使温度反应至基本上分解所有二聚体，三聚体之前加热气态III族前体 或这些前体的其它分子变体转化成它们的组分单体。
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9.发明申请公开(公告)号：US20090223453A1
公开(公告)日：2009-09-10
申请号：US12305574
申请日：2007-11-16
IPC分类号： C23C16/00
CPC分类号： C30B25/14 , C30B29/406 , C30B35/00
摘要： The invention relates to methods and apparatus that are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically GaN wafers. Specifically, the methods relate to substantially preventing the formation of unwanted materials on an isolation valve fixture within a chemical vapor deposition (CVD) reactor. The invention provides apparatus and methods for limiting deposition/condensation of GaCl3 and reaction by-products on an isolation valve that is used in the system and method for forming a monocrystalline Group III-V semiconductor material by reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber.
摘要翻译： 本发明涉及为生产III-N（氮）化合物半导体晶片，特别是GaN晶片而优化的方法和装置。 具体地说，这些方法涉及基本上防止在化学气相沉积（CVD）反应器内的隔离阀装置上形成不需要的材料。 本发明提供了用于限制用于该系统的隔离阀上的GaCl 3和反应副产物的沉积/冷凝的装置和方法以及通过使一定量的第III族前体气体反应形成单晶III-V族半导体材料的方法 作为一种反应物，其具有一定量的气态V族组分作为反应室中的另一反应物。
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公开(公告)号：US20090178611A1
公开(公告)日：2009-07-16
申请号：US12305534
申请日：2007-11-15
CPC分类号： C30B25/10 , C23C16/303 , C23C16/4411 , C23C16/4412 , C23C16/45504 , C23C16/45593 , C30B25/14 , C30B29/406 , C30B35/00 , H01L21/0254 , H01L21/0262
摘要： The present invention is related to the field of semiconductor processing equipment and methods and provides, in particular, methods and equipment for the sustained, high-volume production of Group III-V compound semiconductor material suitable for fabrication of optic and electronic components, for use as substrates for epitaxial deposition, for wafers and so forth. In preferred embodiments, these methods are optimized for producing Group III-N (nitrogen) compound semiconductor wafers and specifically for producing GaN wafers. Specifically, the method includes reacting an amount of a gaseous Group III precursor as one reactant with an amount of a gaseous Group V component as another reactant in a reaction chamber under conditions sufficient to provide sustained high volume manufacture of the semiconductor material on one or more substrates, with the gaseous Group III precursor continuously provided at a mass flow of 50 g Group III element/hour for at least 48 hours. A system for conducting the method is also provided.
摘要翻译： 本发明涉及半导体处理设备和方法的领域，并且特别提供用于持续，大批量生产适用于制造光学和电子部件的III-V族化合物半导体材料的方法和设备，以供使用 作为用于外延沉积的衬底，用于晶片等。 在优选的实施方案中，这些方法被优化用于生产III-N（氮）化合物半导体晶片，并且专门用于生产GaN晶片。 具体地说，该方法包括将一定量的作为一种反应物的气态III族前体与一定量的气态V族组分作为另外的反应物在反应室中反应，条件足以在一个或多个反应器上提供持续的大量制造半导体材料 底物，气态III族前体以50g III族元素/小时的质量流量连续提供至少48小时。 还提供了一种用于进行该方法的系统。
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