WIRING SUBSTRATE, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE
    2.
    发明申请
    WIRING SUBSTRATE, ITS MANUFACTURING METHOD, AND SEMICONDUCTOR DEVICE 有权
    接线基板及其制造方法和半导体器件

    公开(公告)号:US20120327626A1

    公开(公告)日:2012-12-27

    申请号:US13528987

    申请日:2012-06-21

    IPC分类号: H05K1/02 H05K3/00 H05K7/06

    摘要: One embodiment provides a wiring substrate including: a core substrate having an insulative base member, the insulative base member having a first surface and a second surface, a plurality of linear conductors penetrating through the insulative base member from the first surface to the second surface; an inorganic material layer joined to at least one of the first surface and the second surface of the insulative base member; and a penetration line penetrating through the inorganic material layer, wherein one end of the penetration line is electrically connected to a corresponding part of the linear conductors, without intervention of a bump.

    摘要翻译: 一个实施例提供一种布线基板,包括:具有绝缘基底构件的芯基板,所述绝缘基底构件具有第一表面和第二表面;多个线状导体,从所述第一表面穿过所述绝缘基底构件到所述第二表面; 连接到所述绝缘基体的第一表面和所述第二表面中的至少一个的无机材料层; 以及穿透无机材料层的穿透线,其中穿透线的一端电连接到线性导体的相应部分,而不会发生凹凸。

    BASE MEMBER
    10.
    发明申请
    BASE MEMBER 审中-公开
    基地会员

    公开(公告)号:US20130048350A1

    公开(公告)日:2013-02-28

    申请号:US13588013

    申请日:2012-08-17

    IPC分类号: H05K1/05

    摘要: A base member includes: a core layer including: a plate-like body, made of aluminum oxide; and plural linear conductors, which penetrate through the plate-like body in a thickness direction of the plate-like body; a bonding layer, formed on at least one of a first surface and a second surface of the core layer; and a silicon layer or a glass layer, formed on the bonding layer.

    摘要翻译: 基底构件包括:芯层,包括:由氧化铝制成的板状体; 以及在板状体的厚度方向上穿过板状体的多个线状导体; 形成在芯层的第一表面和第二表面中的至少一个上的结合层; 以及形成在所述接合层上的硅层或玻璃层。