公开(公告)号：US4581622A

公开(公告)日：1986-04-08

申请号：US578992

申请日：1984-02-13

申请人： Kanetake Takasaki ,  Mikio Takagi ,  Kenji Koyama

发明人： Kanetake Takasaki ,  Mikio Takagi ,  Kenji Koyama

IPC分类号： H01L21/318 ,  C23C16/30 ,  G11C16/02 ,  G11C17/00 ,  H01L21/314 ,  H01L21/56 ,  H01L21/8247 ,  H01L23/29 ,  H01L23/31 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  G11C11/40 ,  H01L27/10 ,  H01L27/14 ,  H01L21/94

CPC分类号： H01L29/518 ,  C23C16/308 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/7881 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/081 ,  Y10S148/114 ,  Y10S438/958 ,  Y10S438/972

摘要： A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.

公开(公告)号：US4532022A

公开(公告)日：1985-07-30

申请号：US499477

申请日：1983-05-31

申请人： Kanetake Takasaki ,  Mikio Takagi ,  Kenji Koyama

发明人： Kanetake Takasaki ,  Mikio Takagi ,  Kenji Koyama

IPC分类号： H01L21/318 ,  C23C16/30 ,  G11C16/02 ,  G11C17/00 ,  H01L21/314 ,  H01L21/56 ,  H01L21/8247 ,  H01L23/29 ,  H01L23/31 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  C23C15/00

CPC分类号： H01L29/518 ,  C23C16/308 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/56 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/7881 ,  H01L2924/0002 ,  Y10S148/043 ,  Y10S148/081 ,  Y10S148/114 ,  Y10S438/958 ,  Y10S438/972

摘要： A silicon nitride film containing from 20 to 70% oxygen, for use as a surface passivation film, has enhanced ultraviolet ray transmissivity while exhibiting the desirable moisture proofness quality of a silicon nitride film.

摘要翻译： 含有20〜70％氧的用作表面钝化膜的氮化硅膜具有增强的紫外线透射率，同时表现出氮化硅膜所需的防潮性。

公开(公告)号：US4539068A

公开(公告)日：1985-09-03

申请号：US412260

申请日：1982-08-27

申请人： Mikio Takagi ,  Kanetake Takasaki ,  Kenji Koyama

发明人： Mikio Takagi ,  Kanetake Takasaki ,  Kenji Koyama

IPC分类号： C30B25/00 ,  B01J19/08 ,  C01B21/068 ,  C23C16/30 ,  C23C16/509 ,  C30B25/02 ,  H01L21/205 ,  H01L21/3065

CPC分类号： C23C16/5096

摘要： A plasma chemical vapor deposition method for forming a film on a substrate which is placed on one of a pair of electrodes oppositely arranged within the reaction chamber of a reactor. A plurality of power generators of different frequencies are applied to the electrodes to excite reactive gases introduced into the reaction chamber, whereby the reactive gases are transformed into a plasma and a desired film is formed on the substrate. Film with a small number of pinholes was formed at a relatively high deposition rate by combinations of power generator frequencies of, for example, 13.56 MHz and 1 MHz, 13.56 MHz and 50 KHz, and 5 MHz and 400 KHz.

摘要翻译： 一种用于在基板上形成膜的等离子体化学气相沉积方法，其被放置在反应器的反应室内相对布置的一对电极中的一个电极上。 将多个不同频率的发电机施加到电极以激励引入到反应室中的反应气体，由此将反应气体转化为等离子体，并在基板上形成所需的膜。 通过组合例如13.56MHz和1MHz，13.56MHz和50KHz以及5MHz和400KHz的发电机频率，以相对高的沉积速率形成具有少量针孔的膜。

公开(公告)号：US4394401A

公开(公告)日：1983-07-19

申请号：US290978

申请日：1981-08-07

申请人： Yoshimi Shioya ,  Mamoru Maeda ,  Kanetake Takasaki ,  Mikio Takagi

发明人： Yoshimi Shioya ,  Mamoru Maeda ,  Kanetake Takasaki ,  Mikio Takagi

IPC分类号： C01B33/113 ,  C03C17/02 ,  C03C17/245 ,  C23C16/30 ,  C23C16/40 ,  C23C16/50 ,  C23C16/509 ,  C30B25/02 ,  C30B29/18 ,  H01L21/316

CPC分类号： H01L21/02129 ,  C23C16/401 ,  C23C16/5096 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31625

摘要： A method of plasma enhanced chemical vapor deposition of a phosphosilicate glass film on a substrate from a reaction gas mixture including SiH.sub.4, N.sub.2 O and PH.sub.3 is disclosed. This deposition is effected under the conditions such that a mol ratio of N.sub.2 O to SiH.sub.4 (N.sub.2 O/SiH.sub.4) in the reaction gas mixture is 50 or more and that a mol ratio of PH.sub.3 to SiH.sub.4 (PH.sub.3 /SiH.sub.4) in the reaction gas mixture is 0.08 or less. In the phosphosilicate glass film thus deposited, no cracking occurs due to a high temperature heat-treatment and due to the stress, caused by cooling the deposited films to an ordinarily ambient temperature.

摘要翻译： 公开了一种从包括SiH 4，N 2 O和PH 3的反应气体混合物在基底上等离子体增强化学气相沉积磷硅酸盐玻璃膜的方法。 这种沉积是在反应气体混合物中N2O与SiH4（N2O / SiH4）的摩尔比为50以上，反应气体混合物中PH3〜SiH4（PH3 / SiH4）的摩尔比为 0.08以下。 在这样沉积的磷硅玻璃膜中，不会由于高温热处理而引起裂纹，并且由于通过将沉积膜冷却到常规环境温度而引起的应力。

公开(公告)号：US20100184297A1

公开(公告)日：2010-07-22

申请号：US12665529

申请日：2008-06-20

申请人： Mikio Takagi ,  Seiichi Takahashi

发明人： Mikio Takagi ,  Seiichi Takahashi

IPC分类号： H01L21/306

CPC分类号： H01L21/02063 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069

摘要： [Task] In a proposed protection method, re-oxidation of a semiconductor wafer is prevented. The method is appropriate for fine patterned semiconductor device. A wafer is dry etched and is subjected to a next step of forming an electrode material film. The dry-etched wafer is maintained not re-oxidized until the next step. The dry etching reaction products are appropriately removed.[Means for Solution] A wafer, on which the dry etching reaction products remain, is protected by the reaction products. The wafer is held in an inert gas protective atmosphere having a pressure of 50 Pa or more and an atmospheric pressure or less, or is held in air equivalent to the air of a clean room or in a gas-mixture atmosphere of said air and an inert gas. The reaction products are decomposed and removed by heating immediately before the formation of an electrode-material film.

摘要翻译： [任务]在所提出的保护方法中，防止了半导体晶片的再氧化。 该方法适用于精细图案化半导体器件。 将晶片干蚀刻，并进行形成电极材料膜的下一步骤。 干蚀刻的晶片保持不再氧化直到下一步骤。 适当地除去干蚀刻反应产物。 [解决方案]残留有干蚀刻反应产物的晶片被反应产物保护。 将晶片保持在压力为50Pa以上且大气压以下的惰性气体保护气氛中，或者保持在与洁净室的空气或空气的气体混合气氛相当的空气中， 惰性气体。 反应产物在形成电极材料膜之前立即加热分解和除去。

公开(公告)号：US20090117747A1

公开(公告)日：2009-05-07

申请号：US11990440

申请日：2006-08-15

申请人： Mikio Takagi ,  Seiichi Takahashi ,  Hiroaki Inoue ,  Masayuki Satou ,  Yutaka Miura

发明人： Mikio Takagi ,  Seiichi Takahashi ,  Hiroaki Inoue ,  Masayuki Satou ,  Yutaka Miura

IPC分类号： H01L21/3065

CPC分类号： H01L21/67109 ,  H01L21/02046 ,  H01L21/306 ,  H01L21/67017 ,  H01L21/67757

摘要： [Task] Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again used for loading new semiconductor silicon wafer(s) 10. The wafer(s) on the jig 9 is subjected to removal of a native oxide film and then hydrogen bonding. The resultant heat remains in jig and makes it difficult to maintain the wafers to temperature appropriate to removal of a native oxide film.[Means for Solution] After treatment of hydrogen bonding, inert gas having temperature of from 0 to −30° C. is injected into reaction vessel 5 and/or treatment preparing vessel 21, in which a native oxide film has been removed.

摘要翻译： [任务]半导体硅晶片上的天然氧化物膜在50℃以下的温度下进行干法蚀刻。 然后进行氢气处理，其温度为100℃以上，以使悬挂键与氢键合。 已经使用的夹具9再次用于装载新的半导体硅晶片10.将夹具9上的晶片除去自然氧化膜，然后氢键合。 所得到的热量保留在夹具中，并且使得难以将晶片保持适于去除天然氧化物膜的温度。 [解决方案]在氢键合处理之后，将温度为0〜-30℃的惰性气体注入已除去自然氧化膜的反应容器5和/或处理制备容器21中。

公开(公告)号：US06248672B1

公开(公告)日：2001-06-19

申请号：US09310760

申请日：1999-05-13

申请人： Mikio Takagi

发明人： Mikio Takagi

IPC分类号： C23C16455

CPC分类号： C23C16/45521 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45591 ,  C23C16/4584 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115

摘要： In a method for producing a semiconductor device using a dual tube reactor, inert gas is fed into the vertical reaction-tube, a reaction gas is introduced into the vertical reaction-tube, the inert gas is exhausted through the annular channel formed between the inner tube and the outer tube at a bottom portion of the vertical reaction-tube; and, a wafer is heat treated in the vertical reaction-tube by means of a heating furnace. In order to decrease the number and size of the particles, the wafer is displaced upward and then positioned at a level substantially the same as or above the top end of the inner tube, and the reaction gas is introduced into the vertical reaction-tube at or above the position of the wafer. Furthermore, the inert gas is caused to flow from a bottom portion of the inner tube toward the wafer positioned as above. As a result, inflow of the reaction gas into the inner tube is impeded, and the generation of particles there can be lessened.

摘要翻译： 在使用双管反应器的半导体器件的制造方法中，将惰性气体供给到垂直反应管中，将反应气体引入到垂直反应管中，惰性气体通过内部形成的环状通路排出 管和外管在垂直反应管的底部; 并且通过加热炉在垂直反应管中对晶片进行热处理。 为了减小颗粒的数量和尺寸，将晶片向上移位，然后定位在与内管的顶端基本相同或高于内管的水平上，并将反应气体引入垂直反应管中 或高于晶片的位置。 此外，使惰性气体从内管的底部朝向如上定位的晶片流动。 结果，阻止反应气体进入内管，并且可以减少颗粒的产生。

公开(公告)号：US06204194B1

公开(公告)日：2001-03-20

申请号：US09231821

申请日：1999-01-15

申请人： Mikio Takagi

发明人： Mikio Takagi

IPC分类号： H01L2131

CPC分类号： C23C16/45504 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/45521 ,  C23C16/45578 ,  C23C16/45591 ,  C23C16/4584 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31612

摘要： The film growth speed of a conventional vertical heating method, such as SiO2 film, polycrystalline Si film or the like of a semiconductor device, is enhanced by means of discharging and sucking the reaction gas onto and from the Si wafers placed horizontally in the vertical furnace. The wafers are rotated and the wafer-distance is set at 5 mm or more.

摘要翻译： 通过将反应气体排放到水平放置在立式炉中的Si晶片上并从其中吸出反应气体来提高常规垂直加热方法的膜生长速度，例如半导体器件的SiO 2膜，多晶Si膜等 。 晶片旋转，晶片间距设定在5mm以上。

公开(公告)号：US5445676A

公开(公告)日：1995-08-29

申请号：US321745

申请日：1994-10-12

申请人： Mikio Takagi

发明人： Mikio Takagi

IPC分类号： C23C16/46 ,  C23C16/54 ,  C30B31/12 ,  F27B17/00 ,  F27D3/00 ,  H01L21/00 ,  C23C16/00

CPC分类号： H01L21/67115 ,  C23C16/46 ,  C23C16/54 ,  C30B31/12 ,  F27B17/0025 ,  F27D2003/0075 ,  Y10T29/41

摘要： A wafer(s) for producing semiconductor devices is subjected to heat treatment in a vertical thermal reactor, which is provided with an electric heating means setting a first temperature and another electric heating means setting a second temperature higher than the first temperature. The wafer(s) is moved upwards and is subjected to a treatment in the second region of the vertical thermal reactor; and, is reverted to the first region. Rapid thermal processing of 6 or 8 inch wafer(s) is possible without causing slip lines.

摘要翻译： 用于制造半导体器件的晶片在垂直热反应器中进行热处理，所述立式热反应器设置有设定第一温度的电加热装置和设置高于第一温度的第二温度的另一电加热装置。 将晶片向上移动并在垂直热反应器的第二区域中进行处理; 并被恢复到第一个地区。 6或8英寸晶圆的快速热处理是可能的，而不会导致滑移线。

公开(公告)号：US4263087A

公开(公告)日：1981-04-21

申请号：US120094

申请日：1980-02-11

申请人： Kaoru Tanabe ,  Yoshifumi Nomura ,  Mamoru Maeda ,  Mikio Takagi

发明人： Kaoru Tanabe ,  Yoshifumi Nomura ,  Mamoru Maeda ,  Mikio Takagi

IPC分类号： C30B25/02 ,  C30B25/10 ,  C30B25/12 ,  H01L21/205 ,  H01L21/31 ,  C23C13/00

CPC分类号： C30B29/06 ,  C30B25/10 ,  C30B25/12 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： Epitaxial layers are formed by introducing a reaction gas mixture into a reaction vessel in which semiconductor substrates are located, under a pressure of not higher than 1333 Pa (10 Torr), and heating said semiconductor substrates by high frequency induction power so that layers grow epitaxially on said semiconductor substrates. The frequency f of high frequency power is not higher than 50 kHz, and the pressure P in said reaction vessel is maintained in the following range ##STR1## wherein, P is the pressure in units of Pa or Torr in the reaction vessel and f is the frequency in kHz of said high frequency power.

摘要翻译： 通过在不高于1333Pa（10Torr）的压力下将反应气体混合物引入到其中位于半导体衬底的反应容器中并通过高频感应功率加热所述半导体衬底以使得层外延生长来形成外延层 在所述半导体衬底上。 高频功率的频率f不高于50kHz，并且所述反应容器中的压力P保持在以下范围内：其中P是反应容器中的Pa或Torr单位的压力 f是所述高频功率的kHz的频率。