利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

124 条记录 (耗时 0.027 秒)

    Semiconductor memory with trench capacitor and method of fabricating the same
    2.
    发明申请
    Semiconductor memory with trench capacitor and method of fabricating the same 失效
    具有沟槽电容器的半导体存储器及其制造方法

    公开(公告)号：US20050184323A1

    公开(公告)日：2005-08-25

    申请号：US11038173

    申请日：2005-01-21

    申请人： Mitsuru Sato ,  Hirofumi Inoue ,  Masaru Kito

    发明人： Mitsuru Sato ,  Hirofumi Inoue ,  Masaru Kito

    IPC分类号： H01L27/108 ,  H01L21/8242 ,  H01L27/10

    CPC分类号： H01L27/10867

    摘要： A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor adjacently formed to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.

    摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底中的沟槽电容器，与沟槽电容器相邻形成并具有形成在半导体衬底上的栅极电极和形成在半导体衬底的表面中的源极/漏极区域的单元晶体管， 形成在半导体衬底中以便电连接在沟槽电容器和源极/漏极区域之间的杂质扩散区域和形成在杂质扩散区域和沟槽电容器之间的Ge包含区域。

    Semiconductor memory with trench capacitor and method of fabricating the same
    5.
    发明授权
    Semiconductor memory with trench capacitor and method of fabricating the same 失效
    具有沟槽电容器的半导体存储器及其制造方法

    公开(公告)号：US07091546B2

    公开(公告)日：2006-08-15

    申请号：US11038173

    申请日：2005-01-21

    申请人： Mitsuru Sato ,  Hirofumi Inoue ,  Masaru Kito

    发明人： Mitsuru Sato ,  Hirofumi Inoue ,  Masaru Kito

    IPC分类号： H01L29/772

    CPC分类号： H01L27/10867

    摘要： A semiconductor device includes semiconductor substrate, a trench capacitor formed in the semiconductor substrate, a cell transistor formed so as to the trench capacitor and having a gate electrode formed on the semiconductor substrate and a source/drain region formed in a surface of the semiconductor substrate, an impurity diffusion region formed in the semiconductor substrate so as to be electrically connected between the trench capacitor and the source/drain region, and a Ge inclusion region formed between the impurity diffusion region and the trench capacitor.

    摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底中的沟槽电容器，形成为沟槽电容器的单元晶体管，并且具有形成在半导体衬底上的栅极电极和形成在半导体衬底的表面中的源极/漏极区域 形成在半导体衬底中以便电连接在沟槽电容器和源极/漏极区之间的杂质扩散区域和形成在杂质扩散区域和沟槽电容器之间的Ge包含区域。

    Trench capacitor and method of manufacturing the same
    6.
    发明申请
    Trench capacitor and method of manufacturing the same 审中-公开
    沟槽电容器及其制造方法

    公开(公告)号：US20050095801A1

    公开(公告)日：2005-05-05

    申请号：US10947388

    申请日：2004-09-23

    申请人： Mitsuru Sato ,  Hirofumi Inoue

    发明人： Mitsuru Sato ,  Hirofumi Inoue

    IPC分类号： H01L21/334 ,  H01L21/8242 ,  H01L27/108 ,  H01L29/94 ,  H01L21/20 ,  H01L29/76 ,  H01L31/119

    CPC分类号： H01L27/1087 ,  H01L27/10829 ,  H01L27/10867 ,  H01L29/66181 ,  H01L29/945

    摘要： A trench capacitor comprises a semiconductor substrate, a trench provided in the semiconductor substrate, a first doped polysilicon filled in the trench at a lower end of the trench via a first dielectric film, and a second doped polysilicon filled in the trench at an upper end of the trench via a second dielectric film, the second doped polysilicon being contiguously disposed to the first doped polycrystal silicon, wherein the second dielectric film consists of an oxide film using radicals.

    摘要翻译： 沟槽电容器包括半导体衬底，设置在半导体衬底中的沟槽，经由第一电介质膜填充在沟槽的下端处的沟槽中的第一掺杂多晶硅，以及在上端填充在沟槽中的第二掺杂多晶硅 的第二电介质膜，所述第二掺杂多晶硅连续地设置在所述第一掺杂多晶硅上，其中所述第二电介质膜由使用自由基的氧化膜组成。

    Electrostatic discharge protector
    7.
    发明授权
    Electrostatic discharge protector 失效
    静电放电保护器

    公开(公告)号：US08625248B2

    公开(公告)日：2014-01-07

    申请号：US13123262

    申请日：2009-10-06

    申请人： Mina Onishi ,  Yoshimitsu Ishihara ,  Hirofumi Inoue ,  Yukihiko Azuma

    发明人： Mina Onishi ,  Yoshimitsu Ishihara ,  Hirofumi Inoue ,  Yukihiko Azuma

    IPC分类号： H02H1/04 ,  H02H3/22

    CPC分类号： H01C7/12 ,  H01T4/10 ,  H05K1/0259 ,  H05K2201/09672 ,  H05K2201/09881

    摘要： The present invention provides an electrostatic discharge protector capable of protecting electronic circuit boards having various designs from electrostatic discharge freely, simply and easily. The electrostatic discharge protector of the present invention comprises at least three conductive members containing one pair of electrodes and the conductive members other than the electrodes, the conductive members are each disposed in such a way that the gap between one conductive member and the other conductive member has a width of 0.1 to 10 μm, an insulating member is disposed and embedded in at least one of gaps having a width of 0.1 to 10 μm which are adjacent to each conductive member and one electrode is connected to the other electrode paired with the one electrode through the insulating member and the conductive members other than electrodes.

    摘要翻译： 本发明提供一种静电放电保护器，其能够简单且容易地保护具有各种设计的电子电路板免受静电放电。 本发明的静电放电保护器包括至少三个包含一对电极的导电构件和除电极之外的导电构件，导电构件各自设置成使得一个导电构件和另一个导电构件之间的间隙 具有0.1至10微米的宽度，绝缘构件设置并嵌入在与每个导电构件相邻的宽度为0.1至10μm的间隙中的至少一个中，并且一个电极连接到与该一个配对的另一个电极 电极通过绝缘构件和除电极之外的导电构件。

    Suspension system for vehicle
    8.
    发明授权
    Suspension system for vehicle 有权
    车辆悬挂系统

    公开(公告)号：US08398091B2

    公开(公告)日：2013-03-19

    申请号：US12935703

    申请日：2009-05-08

    申请人： Hirofumi Inoue ,  Takuhiro Kondo

    发明人： Hirofumi Inoue ,  Takuhiro Kondo

    IPC分类号： B60G17/0165

    CPC分类号： B60G17/0157 ,  B60G17/06 ,  B60G2202/42 ,  B60G2400/102 ,  B60G2400/206 ,  B60G2400/252

    摘要： A suspension system for a vehicle, including: an electromagnetic actuator configured to generate an actuator force and including a sprung-side unit supported by a sprung portion, an unsprung-side unit supported by an unsprung portion, a screw mechanism, and an electromagnetic motor; a connecting mechanism including a support spring for permitting one of the sprung-side and unsprung-side units to be floatingly supported as a floating unit by a unit-floatingly support portion that is one of the sprung and unsprung portions by which the floating unit is supported; and a controller including a sprung-vibration-damping control portion and a relative-vibration-damping control portion that is configured to execute a relative-vibration damping control for damping a vibration of the floating unit caused by the structure in which the floating unit is floatingly supported by the support spring.

    摘要翻译： 一种用于车辆的悬架系统，包括：电磁致动器，其被配置为产生致动器力，并且包括由簧上部支撑的簧上侧单元，由簧下部支撑的簧下侧单元，螺旋机构和电磁马达 ; 一种连接机构，包括：支撑弹簧，用于通过单元浮动支撑部分将所述簧上侧和簧下侧单元中的一个作为浮动单元浮动地支撑，所述单元浮动支撑部分是所述浮动单元和簧下侧单元之一 支持的; 以及控制器，其包括弹簧减振控制部分和相对减振控制部分，所述相关减振控制部分被配置为执行相对振动衰减控制，以减缓由所述浮动单元是 由支撑弹簧浮动支撑。