公开(公告)号：US07981798B2

公开(公告)日：2011-07-19

申请号：US12233875

申请日：2008-09-19

申请人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

发明人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

IPC分类号： H01L21/44

CPC分类号： H01L33/486 ,  B81B2207/096 ,  B81C1/00301 ,  H01L24/97 ,  H01L33/62 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/12041 ,  H01L2924/15788 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/05599

摘要： The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film.

摘要翻译： 本公开涉及一种制造衬底的方法。 该方法包括：（a）通过从硅衬底的第一表面向硅衬底施加各向异性蚀刻形成通孔; （b）形成第一绝缘膜以覆盖硅衬底的第一表面，从通孔露出的硅衬底的表面和与第一表面相对的硅衬底的第二表面; （c）在设置在第二表面上的第一绝缘膜的一部分中形成开口，第一绝缘膜的与形成通孔的区域相对应的部分; （d）使用设置在第二表面上的第一绝缘膜作为掩模蚀刻硅衬底，从而在硅衬底中形成空腔; 和（e）去除第一绝缘膜。

公开(公告)号：US07708613B2

公开(公告)日：2010-05-04

申请号：US11656580

申请日：2007-01-23

申请人： Yuichi Taguchi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Mitsutoshi Higashi

发明人： Yuichi Taguchi ,  Masahiro Sunohara ,  Hideaki Sakaguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Mitsutoshi Higashi

IPC分类号： H01J1/62

CPC分类号： H01L33/507 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2924/16195 ,  H01L2933/0041

摘要： A method of producing a light emitting apparatus including a light emitting element, a light emitting element housing having a recess for housing the light emitting element, and a translucent substrate placed on the light emitting element housing is disclosed. The disclosed method includes a fluorescent-substance-containing resin forming step of forming a fluorescent-substance-containing resin on a first side of the translucent substrate which first side is opposite to a second side of the translucent substrate which second side faces the recess. In the fluorescent-substance-containing resin forming step, luminance and chromaticity of light that is emitted from the light emitting element and then transmitted by the fluorescent-substance-containing resin are measured and a thickness of the fluorescent-substance-containing resin is adjusted based on the measured luminance and chromaticity so that light emitted from the light emitting apparatus attains the specified luminance and chromaticity.

摘要翻译： 公开了一种制造包括发光元件的发光装置的方法，具有用于容纳发光元件的凹部的发光元件壳体和放置在发光元件壳体上的透光性基板。 所公开的方法包括在透光性基板的第一面上形成含有荧光物质的树脂的荧光物质的树脂形成工序，第一面与透光性基板的第二面相对，第二面与凹部相对。 在含荧光物质的树脂形成步骤中，测量从发光元件发射并随后由含荧光物质的树脂透射的光的亮度和色度，并调节含荧光物质的树脂的厚度 基于测量的亮度和色度，使得从发光装置发射的光达到规定的亮度和色度。

公开(公告)号：US07705451B2

公开(公告)日：2010-04-27

申请号：US11882568

申请日：2007-08-02

申请人： Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Masahiro Sunohara ,  Akinori Shiraishi ,  Mitsutoshi Higashi

发明人： Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Masahiro Sunohara ,  Akinori Shiraishi ,  Mitsutoshi Higashi

IPC分类号： H01L23/06

CPC分类号： H01L23/055 ,  B81B2207/012 ,  B81C1/0023 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/00 ,  H01L2224/0401

摘要： A semiconductor device includes a laminated substrate formed by laminating a plurality of semiconductor substrates, a concave part formed in the laminated substrate, and a semiconductor element mounted in the concave part. A method of manufacturing a semiconductor device includes a first step of forming a laminated substrate by laminating a plurality of semiconductor substrates, a second step of forming a concave part by etching the laminated substrate, and a third step of mounting a semiconductor element in the concave part.

摘要翻译： 半导体器件包括通过层叠多个半导体衬底，形成在层叠衬底中的凹部和安装在凹部中的半导体元件而形成的层叠衬底。 一种制造半导体器件的方法包括：通过层叠多个半导体衬底形成层叠衬底的第一步骤，通过蚀刻层叠衬底形成凹部的第二步骤，以及将半导体元件安装在凹部中的第三步骤 部分。

公开(公告)号：US07494898B2

公开(公告)日：2009-02-24

申请号：US11641336

申请日：2006-12-19

申请人： Masahiro Sunohara ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

发明人： Masahiro Sunohara ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Naoyuki Koizumi ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

IPC分类号： H01L21/00

CPC分类号： H01L33/483 ,  B81B7/0067 ,  H01L2224/16225

摘要： A disclosed method for manufacturing a semiconductor device having a structure where a semiconductor element is mounted on a first substrate includes the steps of: bonding the first substrate on which the semiconductor element is mounted and a second substrate made of a material different from a material of the first substrate so as to encapsulate the semiconductor element; forming a first groove in the first substrate and a second groove in the second substrate; and cleaving a portion between the first groove and the second groove so as to individualize the semiconductor device.

摘要翻译： 公开的制造半导体器件的半导体器件的方法，其中半导体元件安装在第一衬底上，包括以下步骤：将其上安装有半导体元件的第一衬底和由不同于 第一衬底以封装半导体元件; 在所述第一基板中形成第一凹槽，在所述第二基板中形成第二凹槽; 并且在第一凹槽和第二凹槽之间切割一部分，以使半导体器件单独化。

公开(公告)号：US20080150109A1

公开(公告)日：2008-06-26

申请号：US11962232

申请日：2007-12-21

申请人： Masahiro Sunohara ,  Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Mitsutoshi Higashi

发明人： Masahiro Sunohara ,  Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Naoyuki Koizumi ,  Mitsutoshi Higashi

IPC分类号： H01L23/46

CPC分类号： H01L23/427 ,  H01L23/473 ,  H01L2224/16225 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： An electronic component has a substrate made of silicon in which a flow path for circulating a refrigerant is formed, a conductive pattern formed on a first principal surface of the substrate, a via plug penetrating the substrate and also connected to the conductive pattern, and an elastically deformable external connection terminal installed on a second principal surface of the substrate.

摘要翻译： 电子部件具有由硅构成的基板，其中形成有用于使制冷剂循环的流路，形成在基板的第一主表面上的导电图案，穿透基板的通孔塞，并且还连接到导电图案， 可弹性变形的外部连接端子安装在基板的第二主表面上。

公开(公告)号：US20070290329A1

公开(公告)日：2007-12-20

申请号：US11812149

申请日：2007-06-15

申请人： Kei Murayama ,  Mitsutoshi Higashi ,  Naoyuki Koizumi ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara

发明人： Kei Murayama ,  Mitsutoshi Higashi ,  Naoyuki Koizumi ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara

IPC分类号： H01L23/12

CPC分类号： H01L25/167 ,  H01L23/147 ,  H01L23/4926 ,  H01L23/62 ,  H01L24/48 ,  H01L25/16 ,  H01L2224/32145 ,  H01L2224/48137 ,  H01L2224/4823 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12035 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： In a semiconductor device 100, a light emitting element 120 has been mounted on an upper plane of a semiconductor substrate 102. In an impurity diffusion region of the semiconductor substrate 102, a P conducting type of a layer 104, and an N layer 106 have been formed, while an N conducting type impurity is implanted to the P layer 104, and then the implanted impurity is diffused to constitute the N layer 106. A zener diode 108 made of a semiconductor device has been formed by the P layer 104 and the N layer 106.

摘要翻译： 在半导体器件100中，发光元件120已经被安装在半导体衬底102的上平面上。在半导体衬底102的杂质扩散区域中，P导电类型的层104和N层106具有 形成N导电型杂质，然后将N导电型杂质注入到P层104中，然后将注入的杂质扩散以构成N层106.由P层104形成由半导体器件制成的齐纳二极管108， N层106。

公开(公告)号：US20110227218A1

公开(公告)日：2011-09-22

申请号：US13116623

申请日：2011-05-26

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L23/498

CPC分类号： H01L23/147 ,  H01L23/13 ,  H01L23/49827 ,  H01L24/48 ,  H01L33/486 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/48091 ,  H01L2224/48235 ,  H01L2224/85455 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12043 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15157 ,  H01L2924/15165 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity.

摘要翻译： 在用于封装的硅衬底中，设置有通孔，其中填充有用于容纳电子器件的芯片的空腔的底表面的通孔到衬底的背面。 在空腔的底面侧的贯通电极的端部具有与形成包括电子器件的芯片的电路的布线的连接部。 用于封装的硅衬底的特征在于，（1）包括薄膜布线作为布线，并且连接部分被连接到薄膜布线的导体加强和/或（2）引线接合部分被包括为 通过在空腔的底面侧引线接合贯通电极的端部而形成布线和连接部。

公开(公告)号：US07960820B2

公开(公告)日：2011-06-14

申请号：US12265203

申请日：2008-11-05

申请人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

发明人： Akinori Shiraishi ,  Kei Murayama ,  Yuichi Taguchi ,  Masahiro Sunohara ,  Mitsutoshi Higashi

IPC分类号： H01L23/14

CPC分类号： H01L33/04 ,  B81B2207/012 ,  B81C1/0023 ,  B81C2203/031 ,  H01L24/16 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/167 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48465 ,  H01L2224/4911 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01014 ,  H01L2924/01018 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0107 ,  H01L2924/01074 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/1461 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/15311 ,  H01L2924/1532 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2924/20752 ,  H01L2224/05599

摘要： A semiconductor package in which an electronic device chip is provided in a cavity of a silicon substrate stacked product constituted by stacking a plurality of silicon substrates.

摘要翻译： 一种半导体封装件，其中电子器件芯片设置在通过堆叠多个硅衬底而构成的硅衬底堆叠产品的空腔中。

公开(公告)号：US07838897B2

公开(公告)日：2010-11-23

申请号：US11673818

申请日：2007-02-12

申请人： Mitsutoshi Higashi ,  Masahiro Sunohara ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Kei Murayama ,  Naoyuki Koizumi ,  Hideaki Sakaguchi

发明人： Mitsutoshi Higashi ,  Masahiro Sunohara ,  Yuichi Taguchi ,  Akinori Shiraishi ,  Kei Murayama ,  Naoyuki Koizumi ,  Hideaki Sakaguchi

IPC分类号： H01L29/267 ,  H01L29/16

CPC分类号： H01L33/60 ,  H01L33/62 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2924/00014 ,  Y10T29/49002 ,  Y10T83/04 ,  H01L2224/05599

摘要： The invention provides a light-emitting device 10 including a light-emitting element 12 and a substrate 11 where the light-emitting element 12 is arranged, characterized in that a housing part 28 housing the light-emitting element 12 and having a shape that is tapered upward from the substrate 11 and a metal frame 15 surrounding the light-emitting element 12 and including the side face 28A of the housing part 28 made into a almost mirror-polished surface are provided on the substrate 11.

摘要翻译： 本发明提供一种发光装置10，其包括发光元件12和布置有发光元件12的基板11，其特征在于，容纳发光元件12的壳体部28，其形状为 在基板11上设置有从基板11向上方逐渐变细的金属框架15和包围发光元件12的金属框架15，并且将金属框架15包括在壳体部件28的侧面28A上，该壳体部件28被形成为近似镜面抛光的表面。

公开(公告)号：US07795140B2

公开(公告)日：2010-09-14

申请号：US12247496

申请日：2008-10-08

申请人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

发明人： Yuichi Taguchi ,  Akinori Shiraishi ,  Masahiro Sunohara ,  Kei Murayama ,  Hideaki Sakaguchi ,  Mitsutoshi Higashi

IPC分类号： H01L21/44

CPC分类号： H01L21/486 ,  H01L21/76898 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/18301

摘要： A method of manufacturing a substrate, includes: (a) forming the through hole by etching the silicon substrate from a first surface of the silicon substrate by a Bosch process; (b) forming a thermal oxide film such that the thermal oxide film covers the first surface of the silicon substrate, a second surface of the silicon substrate opposite to the first surface, and a surface of the silicon substrate corresponding to a side surface of the through hole, by thermally oxidizing the silicon substrate where the through hole is formed; (c) removing the thermal oxide film; (d) forming an insulating film such that the insulating film covers the first and second surfaces of the silicon substrate and the surface of the silicon substrate corresponding to the side surface of the through hole; and (e) forming the through electrode in the through hole on which the insulating film is formed.

摘要翻译： 一种制造衬底的方法，包括：（a）通过使用Bosch工艺从硅衬底的第一表面上蚀刻硅衬底形成通孔; （b）形成热氧化膜，使得热氧化膜覆盖硅衬底的第一表面，与第一表面相对的硅衬底的第二表面和与衬底的侧表面相对应的硅衬底的表面 通孔，通过热氧化形成通孔的硅衬底; （c）去除热氧化膜; （d）形成绝缘膜，使得所述绝缘膜覆盖所述硅衬底的所述第一表面和所述第二表面以及所述硅衬底的与所述通孔的侧表面相对应的表面; 和（e）在其上形成有绝缘膜的通孔中形成通孔。