公开(公告)号：US5053297A

公开(公告)日：1991-10-01

申请号：US502679

申请日：1990-04-02

申请人： Takayuki Yamahira ,  Hisayuki Kato ,  Masanori Anzai

发明人： Takayuki Yamahira ,  Hisayuki Kato ,  Masanori Anzai

IPC分类号： H01M4/36 ,  H01M4/587 ,  H01M4/66 ,  H01M10/05 ,  H01M10/052 ,  H01M10/34

CPC分类号： H01M10/0525 ,  H01M4/36 ,  H01M4/364 ,  H01M4/485 ,  H01M4/525 ,  H01M2004/028

摘要： A nonaqueous electrolyte secondary battery is disclosed, which comprises an anode having a carbonaceous material as the anode active material which permits lithium to be doped and undoped and a current collector, a cathode having a lithium compound as the cathode active material which permits lithium to be doped and undoped, and a nonaqueous electrolyte. The cathode active material contains the primary active material of a first lithium compound having the potential which is more "noble" than the potential of the current collector and the auxiliary active material of a second lithium compound having the potential which is more "base" than the potential of the current collector. The auxiliary active material works to avoid the dissolution of the anode current collector at the final stage of discharge.

公开(公告)号：US09449883B2

公开(公告)日：2016-09-20

申请号：US13376081

申请日：2009-06-05

申请人： Hisayuki Kato ,  Yoshihiko Kusakabe

发明人： Hisayuki Kato ,  Yoshihiko Kusakabe

IPC分类号： H01L27/092 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/66 ,  H01L29/51 ,  H01L29/66

CPC分类号： H01L21/823468 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823864 ,  H01L22/26 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

摘要： First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by causing a portion of the first protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as a mask, and then, cleaning is done. Since silicon nitride films are formed on surfaces of the first protective films, the resistance to chemical solutions is improved. Furthermore, second protective films are formed on the first protective films, respectively. In a pMOS region, an extention implantation region is formed by causing a portion of the first protective film and a portion of the second protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as the mask, and then, cleaning is done.

摘要翻译： 形成第一保护膜以覆盖栅电极部分的侧表面。 在nMOS区域中，通过使位于栅极电极部分的侧表面上的第一保护膜的一部分用作偏移间隔物并使用偏移间隔物作为掩模来形成延伸注入区域，然后清洁 完成了 由于在第一保护膜的表面上形成氮化硅膜，因此提高了对化学溶液的耐性。 此外，在第一保护膜上分别形成第二保护膜。 在pMOS区域中，通过使第一保护膜的一部分和位于栅极电极部分的侧表面上的第二保护膜的一部分用作偏移间隔物并使用偏移间隔物形成延伸注入区 面具，然后进行清洁。

公开(公告)号：US06187100B1

公开(公告)日：2001-02-13

申请号：US09413890

申请日：1999-10-07

申请人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

发明人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

IPC分类号： C23C1600

CPC分类号： H01L21/02667 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/045 ,  H01L29/4916 ,  H01L29/66757 ,  H01L31/182 ,  H01L2924/0002 ,  Y02E10/546 ,  Y02P70/521 ,  H01L2924/00

摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

摘要翻译： 包含多晶硅薄膜的半导体器件可以通过沉积非杂质掺杂的硅薄膜来制造，其中硅薄膜的晶粒主要具有柱状结构和单个晶粒的晶体取向几乎是均匀的方向 或下层膜的界面上的杂质层，然后如果需要，沉积杂质掺杂的硅薄膜，然后进行多结晶热处理。

公开(公告)号：US08487402B2

公开(公告)日：2013-07-16

申请号：US12869323

申请日：2010-08-26

申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

IPC分类号： H01L29/00

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

公开(公告)号：US20110006392A1

公开(公告)日：2011-01-13

申请号：US12878977

申请日：2010-09-09

申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

IPC分类号： H01L23/525

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

公开(公告)号：US06559037B2

公开(公告)日：2003-05-06

申请号：US09809046

申请日：2001-03-16

申请人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

发明人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

IPC分类号： H01L2120

CPC分类号： H01L21/02667 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/045 ,  H01L29/4916 ,  H01L29/66757 ,  H01L31/182 ,  H01L2924/0002 ,  Y02E10/546 ,  Y02P70/521 ,  H01L2924/00

摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

摘要翻译： 包含多晶硅薄膜的半导体器件可以通过沉积非杂质掺杂的硅薄膜来制造，其中硅薄膜的晶粒主要具有柱状结构和单个晶粒的晶体取向几乎是均匀的方向 或下层膜的界面上的杂质层，然后如果需要，沉积杂质掺杂的硅薄膜，然后进行多结晶热处理。

公开(公告)号：US06326216B1

公开(公告)日：2001-12-04

申请号：US08906102

申请日：1997-08-05

申请人： Hisayuki Kato ,  Hisahiko Abe ,  Shinji Nishihara ,  Masahito Yamazaki ,  Keiichi Yoshizumi

发明人： Hisayuki Kato ,  Hisahiko Abe ,  Shinji Nishihara ,  Masahito Yamazaki ,  Keiichi Yoshizumi

IPC分类号： H01L2100

CPC分类号： H01L21/02197 ,  C23C14/088 ,  C23C14/3414 ,  H01L21/02266 ,  H01L21/31691 ,  H01L27/10814 ,  H01L28/55

摘要： In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.

摘要翻译： 为了提高用于形成DRAM或铁电RAM的电容器的电容绝缘膜的高电介质或铁电薄膜的介电常数，残留介电极化，滞后特性等，具有密度 至少90％的理论值用于通过溅射形成用于形成DRAM或铁电RAM的电容器的电容绝缘膜的高电介质或铁电薄膜。

公开(公告)号：US06204155B1

公开(公告)日：2001-03-20

申请号：US09597985

申请日：2000-06-19

申请人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

发明人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

IPC分类号： H01L2120

CPC分类号： H01L21/02667 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/45561 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/045 ,  H01L29/4916 ,  H01L29/66757 ,  H01L31/182 ,  H01L2924/0002 ,  Y02E10/546 ,  Y02P70/521 ,  H01L2924/00

摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

公开(公告)号：US20080164969A1

公开(公告)日：2008-07-10

申请号：US11958360

申请日：2007-12-17

申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

IPC分类号： H01H37/76

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部分10f形成在从电熔丝部分10a的中间位置偏移的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部分20f形成在从电熔丝部分20a的中间位置移位的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

公开(公告)号：US06995058B2

公开(公告)日：2006-02-07

申请号：US10183669

申请日：2002-06-28

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L21/8242

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).