公开(公告)号：US06836498B2

公开(公告)日：2004-12-28

申请号：US09874828

申请日：2001-06-05

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.

摘要翻译： 提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。 半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。 晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。 形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。 半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

公开(公告)号：US06509579B2

公开(公告)日：2003-01-21

申请号：US09760959

申请日：2001-01-16

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

IPC分类号： H01L2906

CPC分类号： H01L21/02378 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/32341 ,  H01S2304/12

摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.

摘要翻译： 提供能够防止基板弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。氮化物体系的III-V族化合物的半导体层的厚度 等于或小于8μm，设置在由蓝宝石制成的基板上。 由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。 形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。 在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。

公开(公告)号：US20050000407A1

公开(公告)日：2005-01-06

申请号：US10909911

申请日：2004-08-02

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/343 ,  C30B15/00 ,  C30B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B27/02 ,  C30B28/10 ,  C30B28/12 ,  C30B28/14 ,  C30B30/04

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

公开(公告)号：US06995406B2

公开(公告)日：2006-02-07

申请号：US10486050

申请日：2003-06-06

申请人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

发明人： Tsuyoshi Tojo ,  Yoshifumi Yabuki ,  Shinichi Ansai ,  Tomonori Hino ,  Osamu Goto ,  Tsuyoshi Fujimoto ,  Osamu Matsumoto ,  Motonobu Takeya ,  Yoshio Oofuji

IPC分类号： H01L33/00

CPC分类号： B82Y20/00 ,  H01L2224/18 ,  H01L2224/24137 ,  H01L2224/73267 ,  H01S5/02276 ,  H01S5/042 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/34333 ,  H01S5/4031

摘要： In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.

摘要翻译： 在包括层叠在蓝宝石或其他材料的基板的一个表面上的氮化物III-V化合物半导体层以形成激光结构的多光束半导体激光器中，并且包括形成在氮化物III上的多个阳极电极和多个阴极电极 -V化合物半导体层，其中一个阳极形成为通过绝缘膜桥接在一个阴极电极上，并且另一个阳极电极形成为通过绝缘膜桥接在另一个阴极电极上。

公开(公告)号：US08435880B2

公开(公告)日：2013-05-07

申请号：US12906217

申请日：2010-10-18

申请人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

发明人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32 ,  H01S5/3013

摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.

摘要翻译： 在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料 具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

公开(公告)号：US20070085093A1

公开(公告)日：2007-04-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US08859401B2

公开(公告)日：2014-10-14

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20110212559A1

公开(公告)日：2011-09-01

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/32

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US09034738B2

公开(公告)日：2015-05-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20110095401A1

公开(公告)日：2011-04-28

申请号：US12906217

申请日：2010-10-18

申请人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

发明人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32 ,  H01S5/3013

摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.

摘要翻译： 在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料 具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。