公开(公告)号：US06836498B2

公开(公告)日：2004-12-28

申请号：US09874828

申请日：2001-06-05

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01S500

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: &mgr;m) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: &mgr;m) along the direction of laminating the n-side contact layer is 15 or less. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density.

摘要翻译： 提供能够获得晶体轴的波动较小并且能够提高器件特性的晶体生长层的半导体激光器，半导体器件和氮化物系III-V族化合物基片及其制造方法。 半导体激光器在用于生长的基板的一个表面上包括多个间隔开的晶种层和具有基于多个晶种层生长的侧向生长区域的n侧接触层。 晶种层形成为沿着排列方向A相对于n侧接触层的边界处的宽度w1（单位：毫姆）的乘积和层叠方向的厚度t1（单位：毫姆） n侧接触层为15以下。在包含n型GaN的基板11上层叠包含氮化物系III-V族化合物半导体的半导体层。 形成突出的晶种部分，并且将具有与晶种部分对应的开口的生长抑制层设置在基板上。 半导体层基于晶种部分生长，具有低位错密度的侧向生长区域。

公开(公告)号：US06509579B2

公开(公告)日：2003-01-21

申请号：US09760959

申请日：2001-01-16

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Masao Ikeda ,  Takeharu Asano ,  Shinro Ikeda ,  Tomonori Hino ,  Katsuyoshi Shibuya

IPC分类号： H01L2906

CPC分类号： H01L21/02378 ,  H01L21/0242 ,  H01L21/02422 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01S5/32341 ,  H01S2304/12

摘要： To provide a semiconductor device capable of preventing the bowing of the substrate, and having a semiconductor layer of a III-V group compound of a nitride system with excellent crystallinity. The semiconductor layer of the III-V group compound of the nitride system whose thickness is equal to or less than 8 &mgr;m, is provided onto a substrate made of sapphire. This reduces the bowing of the substrate due to differences in a thermal expansion coefficient and a lattice constant between the substrate and the semiconductor layer of the III-V group compound of the nitride system. An n-side contact layer forming the semiconductor layer of the III-V group of the nitride system has partially a lateral growth region made by growing in a lateral direction from a crystalline part of a seed crystal layer. In the lateral growth region, dislocation density restricts low, therefore, regions corresponding to the lateral growth region of each layer formed onto the n-side contact layer has excellent crystallinity.

摘要翻译： 提供能够防止基板弯曲的半导体器件，并且具有具有优异结晶度的氮化物系的III-V族化合物的半导体层。氮化物体系的III-V族化合物的半导体层的厚度 等于或小于8μm，设置在由蓝宝石制成的基板上。 由于氮化物系III-V族化合物的基板与半导体层之间的热膨胀系数和晶格常数的差异，这减少了基板的弯曲。 形成氮化物体系的III-V族的半导体层的n侧接触层部分地是由晶种层的结晶部分沿横向生长而形成的横向生长区域。 在横向生长区域中，位错密度低，因此，与形成在n侧接触层上的各层的横向生长区域对应的区域具有优异的结晶性。

公开(公告)号：US20050000407A1

公开(公告)日：2005-01-06

申请号：US10909911

申请日：2004-08-02

申请人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

发明人： Motonobu Takeya ,  Katsunori Yanashima ,  Takeharu Asano ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Tomonori Hino ,  Satoru Kijima ,  Masao Ikeda

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/02 ,  H01S5/343 ,  C30B15/00 ,  C30B21/06 ,  C30B23/00 ,  C30B25/00 ,  C30B27/02 ,  C30B28/10 ,  C30B28/12 ,  C30B28/14 ,  C30B30/04

CPC分类号： B82Y20/00 ,  H01L21/0237 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L33/0075 ,  H01S5/0207 ,  H01S5/0422 ,  H01S5/22 ,  H01S5/34333 ,  H01S2304/12

摘要： A semiconductor laser, a semiconductor device and a nitride series III-V group compound substrate capable of obtaining a crystal growth layer with less fluctuation of the crystallographic axes and capable of improving the device characteristics, as well as a manufacturing method therefor are provided. The semiconductor laser comprises, on one surface of a substrate used for growing, a plurality of spaced apart seed crystal layers and an n-side contact layer having a lateral growing region which is grown on the basis of the plurality of seed crystal layers. The seed crystal layer is formed in that a product of width w1 (unit: μm) at the boundary thereof relative to the n-side contact layer along the arranging direction A and a thickness t1 (unit: μm) along the direction of laminating the n-side contact layer is 15 or less. This can decrease the fluctuation of the crystallographic axes in the n-side contact layer. Accordingly, crystallinity of the semiconductor layer including from n-type clad layer to a p-side contact layer laminated on the n-side contact layer is improved. A semiconductor laser and a semiconductor device capable of decreasing dislocation density and improving device characteristics, as well as a manufacturing method therefor are provided. A semiconductor layer comprising a nitride series III-V group compound semiconductor is laminated on a substrate 11 comprising an n-type GaN. Protruded seed crystal portions are formed and a growth suppression layer having an opening corresponding to the seed crystal portion is disposed to the substrate. The semiconductor layer grows on the basis of the seed crystal portion and has a lateral growing region of low dislocation density. When a current injection region is disposed corresponding to the lateral growing region, the light emission efficiency can be improved. Further, when the growth suppression layer is provided with a function of reflecting or absorbing light generated in the semiconductor layer, it is possible to prevent leakage of light or intrusion of stray light from the substrate to suppress generation of noises.

公开(公告)号：US20050098791A1

公开(公告)日：2005-05-12

申请号：US11001951

申请日：2004-12-02

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/20 ,  H01L33/00

CPC分类号： H01L29/045 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

公开(公告)号：US06890785B2

公开(公告)日：2005-05-10

申请号：US10372903

申请日：2003-02-24

申请人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

发明人： Osamu Goto ,  Takeharu Asano ,  Motonobu Takeya ,  Katsunori Yanashima ,  Shinro Ikeda ,  Katsuyoshi Shibuya ,  Yasuhiko Suzuki

IPC分类号： H01L21/20 ,  H01L29/04 ,  H01L29/20 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L29/045 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02645 ,  H01L29/2003 ,  H01L33/007

摘要： A nitride semiconductor having a large low-defect region in a surface thereof, and a semiconductor device using the same are provided. Also, a manufacturing method for a nitride semiconductor comprising a layer formation step using a transverse growth technique where surface defects can easily be reduced, and a manufacturing method for a semiconductor device using the same are provided. On a substrate, a seed crystal part is formed in a stripe pattern with a buffer layer in between. Next, crystals are grown from the seed crystal part in two stages of growth conditions to form a nitride semiconductor layer. Low temperature growing parts with a trapezoid shaped cross section are formed at a growth temperature of 1030° C. in the first stage and a transverse growth is dominantly advanced at a growth temperature of 1070° C. to form a high temperature growing part between the low temperature growing parts in the second stage. Thereby, hillocks and conventional lattice defects are reduced in a surface of the nitride semiconductor layer which is above the low temperature growing part.

摘要翻译： 提供了其表面具有大的低缺陷区域的氮化物半导体和使用其的半导体器件。 而且，提供一种氮化物半导体的制造方法，其包括使用横向生长技术的层形成步骤，其中可以容易地降低表面缺陷，并且提供了使用其的半导体器件的制造方法。 在基板上，以条纹图案形成晶种部分，其间具有缓冲层。 接下来，在生长条件的两个阶段从晶种部分生长晶体以形成氮化物半导体层。 在第一阶段中在1030℃的生长温度下形成具有梯形横截面的低温生长部件，并且在1070℃的生长温度下横向生长主要进展，以形成高温生长部分 低温生长部件在第二阶段。 因此，在低温生长部分以上的氮化物半导体层的表面，减少了小丘和常规晶格缺陷。

公开(公告)号：US07026179B2

公开(公告)日：2006-04-11

申请号：US10873479

申请日：2004-06-23

申请人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

发明人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

IPC分类号： H01L21/00 ,  H01L29/22

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0

摘要翻译： 当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。 或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

公开(公告)号：US20050191773A1

公开(公告)日：2005-09-01

申请号：US10873479

申请日：2004-06-23

申请人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

发明人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

IPC分类号： C30B29/38 ,  C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L33/00 ,  H01L33/06 ,  H01L33/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/00

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0

摘要翻译： 当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。 或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

公开(公告)号：US06829270B2

公开(公告)日：2004-12-07

申请号：US10228181

申请日：2002-08-27

申请人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

发明人： Yasuhiko Suzuki ,  Takeharu Asano ,  Motonobu Takeya ,  Osamu Goto ,  Shinro Ikeda ,  Katsuyoshi Shibuya

IPC分类号： H01S500

CPC分类号： C30B25/18 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02647 ,  H01L33/007

摘要： When GaN or other nitride III-V compound semiconductor layers are grown on a substrate such as a sapphire substrate, thickness x of the substrate relative to thickness y of the nitride III-V compound semiconductor layers is controlled to satisfy 0

摘要翻译： 当GaN或其它氮化物III-V化合物半导体层在诸如蓝宝石衬底的衬底上生长时，衬底的厚度x相对于氮化物III-V化合物半导体层的厚度y被控制为满足0 =450μm。 或者，如果基板的最大尺寸为D（cm），则其翘曲H在0

公开(公告)号：US20060273326A1

公开(公告)日：2006-12-07

申请号：US11425595

申请日：2006-06-21

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V族化合物半导体制成的半导体发光器件包括由含有In和Ga的第一氮化物III-V化合物半导体构成的有源层，例如InGaN; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。

公开(公告)号：US20080108160A1

公开(公告)日：2008-05-08

申请号：US11969088

申请日：2008-01-03

申请人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

发明人： Osamu Goto ,  Takeharu Asano ,  Yasuhiko Suzuki ,  Motonobu Takeya ,  Katsuyoshi Shibuya ,  Takashi Mizuno ,  Tsuyoshi Tojo ,  Shiro Uchida ,  Masao Ikeda

IPC分类号： H01L33/00

CPC分类号： H01L33/0075 ,  B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/2004 ,  H01S5/2013 ,  H01S5/3201 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/12

摘要： A semiconductor light emitting device made of nitride III-V compound semiconductors is includes an active layer made of a first nitride III-V compound semiconductor containing In and Ga, such as InGaN; an intermediate layer made of a second nitride III-V compound semiconductor containing In and Ga and different from the first nitride III-V compound semiconductor, such as InGaN; and a cap layer made of a third nitride III-V compound semiconductor containing Al and Ga, such as p-type AlGaN, which are deposited in sequential contact.

摘要翻译： 由氮化物III-V化合物半导体制成的半导体发光器件包括由In和Ga等InGaN的第一氮化物III-V化合物半导体构成的有源层; 由包含In和Ga的不同于第一氮化物III-V化合物半导体的第二氮化物III-V化合物半导体制成的中间层，例如InGaN; 以及由含有Al和Ga的第三氮化物III-V化合物半导体（例如p型AlGaN）制成的覆盖层，其以顺序接触沉积。