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公开(公告)号:US09222172B2
公开(公告)日:2015-12-29
申请号:US12195127
申请日:2008-08-20
IPC分类号: C23C16/455 , C23C16/44
CPC分类号: C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译: 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中,用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体,其中,主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中,主体可以具有中心杆和外环,其与中心杆的下部连接并径向向外延伸。 在一些实施方案中,制造挡板的方法可以包括烧结铝,氮和金属氧化物结合剂以形成挡板的主体,所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。
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公开(公告)号:US08022377B2
公开(公告)日:2011-09-20
申请号:US12107281
申请日:2008-04-22
IPC分类号: G21G5/00
CPC分类号: H01L21/67115 , H01L21/3105 , H01S3/03 , H01S3/034 , H01S3/0385 , H01S3/225 , H05H1/2406 , H05H2001/2431 , H05H2001/245
摘要: An apparatus for An apparatus for generating excimer radiation is provided. The apparatus includes a housing having a housing wall. An electrode is configured within the housing. A tubular body is around the electrode. The tubular body includes an outer wall and an inner wall. At least one inert gas is between the outer wall and the inner wall, wherein the housing wall and the electrode are configured to excite the inert gas to illuminate an excimer light for curing.
摘要翻译: 提供了一种用于产生准分子辐射的装置。 该装置包括具有壳体壁的壳体。 电极配置在外壳内。 管状体在电极周围。 管状体包括外壁和内壁。 至少一个惰性气体位于外壁和内壁之间,其中壳体壁和电极构造成激发惰性气体以照射准分子光以进行固化。
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公开(公告)号:US20100048028A1
公开(公告)日:2010-02-25
申请号:US12195127
申请日:2008-08-20
CPC分类号: C23C16/45591 , C04B35/581 , C04B40/0092 , C23C16/4404 , C23C16/45563 , C23C16/45565 , H01J37/32449 , H01L21/02271 , H01L21/0262 , H01L21/28556
摘要: Methods and apparatus relating to aluminum nitride baffles are provided herein. In some embodiments, a baffle for use in semiconductor process chambers may include a body comprising aluminum nitride and a metal oxide binding agent, wherein a ratio of aluminum nitride to metal oxide on a surface of the body is greater than or equal to the ratio within the body. In some embodiments, the body may have a center stem and an outer annulus coupled to and extending radially outwards from a lower portion of the center stem. In some embodiments, a method of fabricating a baffle may include sintering aluminum, nitrogen, and a metal oxide binding agent to form a body of the baffle, the body having excess metal oxide binding agent disposed on a surface thereof; and removing a bulk of the excess metal oxide binding agent from a surface of the body.
摘要翻译: 本文提供了与氮化铝挡板相关的方法和装置。 在一些实施例中,用于半导体处理腔室的挡板可以包括包括氮化铝和金属氧化物结合剂的主体,其中,主体表面上的氮化铝与金属氧化物的比例大于或等于 身体。 在一些实施例中,主体可以具有中心杆和外环,其与中心杆的下部连接并径向向外延伸。 在一些实施方案中,制造挡板的方法可以包括烧结铝,氮和金属氧化物结合剂以形成挡板的主体,所述主体具有设置在其表面上的过量的金属氧化物结合剂; 以及从身体的表面去除大量的多余的金属氧化物粘合剂。
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公开(公告)号:US20090120464A1
公开(公告)日:2009-05-14
申请号:US12265641
申请日:2008-11-05
CPC分类号: H01L21/67069 , C23C16/4412 , H01J37/32834 , H01J37/32862 , Y10S134/902 , Y10T137/85978 , Y10T137/87571
摘要: An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.
摘要翻译: 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一,第二和第三端口。 还描述了包括具有第一,第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一,第二和第三端口的多端口前级线,其中第一前级线路端口耦合到第一接口端口,第二前级线路端口耦合到第二接口端口,并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。
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公开(公告)号:US08409355B2
公开(公告)日:2013-04-02
申请号:US12109187
申请日:2008-04-24
申请人: Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
发明人: Muhammad M. Rasheed , Teruki Iwashita , Hiroshi Otake , Yuki Koga , Kazutoshi Maehara , Xinglong Chen , Sudhir Gondhalekar , Dmitry Lubomirsky
IPC分类号: C23C16/00 , C23F1/00 , H01L21/306
CPC分类号: C23C16/4585 , C23C16/4581 , H01J37/32082 , H01J37/32642 , H01L21/68735
摘要: Embodiments of process kits for substrate supports of semiconductor substrate process chambers are provided herein. In some embodiments, a process kit for a semiconductor process chamber may include an annular body being substantially horizontal and having an inner and an outer edge, and an upper and a lower surface; an inner lip disposed proximate the inner edge and extending vertically from the upper surface; and an outer lip disposed proximate the outer edge and on the lower surface, and having a shape conforming to a surface of the substrate support pedestal. In some embodiments, a process kit for a semiconductor process chamber my include an annular body having an inner and an outer edge, and having an upper and lower surface, the upper surface disposed at a downward angle of between about 5-65 degrees in an radially outward direction from the inner edge toward the outer edge.
摘要翻译: 本文提供了半导体衬底处理室的衬底支撑件的工艺组件的实施例。 在一些实施例中,用于半导体处理室的处理套件可以包括基本上水平的并具有内部和外部边缘以及上部和下部表面的环形体; 靠近所述内边缘并从所述上表面垂直延伸的内唇缘; 以及设置在所述外边缘和所述下表面附近并且具有与所述基板支撑基座的表面相符的形状的外唇缘。 在一些实施例中,用于半导体处理腔室的处理套件包括具有内边缘和外边缘的环形体,并具有上表面和下表面,上表面以约5-65度的向下角度设置在 从内缘朝向外缘的径向向外方向。
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公开(公告)号:US07964040B2
公开(公告)日:2011-06-21
申请号:US12265641
申请日:2008-11-05
IPC分类号: B08B5/00
CPC分类号: H01L21/67069 , C23C16/4412 , H01J37/32834 , H01J37/32862 , Y10S134/902 , Y10T137/85978 , Y10T137/87571
摘要: An exhaust foreline for purging fluids from a semiconductor fabrication chamber is described. The foreline may include a first, second and third ports independently coupled to the chamber. A semiconductor fabrication system is also described that includes a substrate chamber that has a first, second and third interface port. The system may also include a multi-port foreline that has a first, second and third port, where the first foreline port is coupled to the first interface port, the second foreline port is coupled to the second interface port, and the third foreline port is coupled to the third interface port. The system may further include an exhaust vacuum coupled to the multi-port foreline.
摘要翻译: 描述了用于从半导体制造室清洗流体的排气前沿。 前排可以包括独立地联接到室的第一,第二和第三端口。 还描述了包括具有第一,第二和第三接口端口的衬底室的半导体制造系统。 该系统还可以包括具有第一,第二和第三端口的多端口前级线,其中第一前级线路端口耦合到第一接口端口,第二前级线路端口耦合到第二接口端口,并且第三前级端口 耦合到第三接口端口。 该系统还可以包括耦合到多端口前级管线的排气真空。
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公开(公告)号:US10283321B2
公开(公告)日:2019-05-07
申请号:US13251714
申请日:2011-10-03
申请人: Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
发明人: Jang-Gyoo Yang , Matthew L. Miller , Xinglong Chen , Kien N. Chuc , Qiwei Liang , Shankar Venkataraman , Dmitry Lubomirsky
IPC分类号: H01J37/32
摘要: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
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公开(公告)号:US20160035544A1
公开(公告)日:2016-02-04
申请号:US14614199
申请日:2015-02-04
IPC分类号: H01J37/32 , H01L21/687 , C23C16/52 , H01L21/67 , C23C16/458 , C23C16/46
CPC分类号: H01J37/32724 , H01J37/32082 , H01J37/3244 , H01J37/32715 , H01J2237/334 , H01L21/67069 , H01L21/67103 , H01L21/67109 , H01L21/67248 , H01L21/68785
摘要: A wafer carrier is described with independent isolated heater zones. In one example, the carrier has a puck to carry a workpiece for fabrication processes, a heater plate having a plurality of thermally isolated blocks each thermally coupled to the puck, and each having a heater to heat a respective block of the heater plate, and a cooling plate fastened to and thermally coupled to the heater plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate.
摘要翻译: 用独立的隔离加热器区域描述晶片载体。 在一个示例中,载体具有用于承载用于制造工艺的工件的圆盘,具有多个热耦合到圆盘的热隔离块的加热器板,并且每个具有用于加热加热器板的相应块的加热器, 冷却板固定并加热耦合到加热板,冷却板具有一个冷却通道,用于承载传热流体以从冷却板传递热量。
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公开(公告)号:US09068265B2
公开(公告)日:2015-06-30
申请号:US13363342
申请日:2012-01-31
申请人: Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
发明人: Dmitry Lubomirsky , Kartik Ramaswamy , Kallol Bera , Jennifer Sun
IPC分类号: B05B5/00 , B05B1/14 , C23C16/509 , C23C16/455 , H01J37/32
CPC分类号: C23C16/5096 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45572 , H01J37/32091 , H01J37/3244 , H01J37/32559
摘要: Embodiments of the present invention provide a gas distribution plate assembly having protective elements for plasma processing. The gas distribution plate assembly includes a base plate having a front side and a backside, and a plurality of protective elements in direct contact with the base plate. The protective elements cover the front side of the base plate to protect the base plate from a plasma processing environment during use.
摘要翻译: 本发明的实施例提供一种具有用于等离子体处理的保护元件的气体分配板组件。 气体分配板组件包括具有前侧和后侧的基板,以及与基板直接接触的多个保护元件。 保护元件覆盖基板的前侧,以在使用过程中保护基板免受等离子体处理环境的影响。
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公开(公告)号:US08937800B2
公开(公告)日:2015-01-20
申请号:US13867515
申请日:2013-04-22
申请人: Dmitry Lubomirsky , Jennifer Y. Sun , Mark Markovsky , Konstantin Makhratchev , Douglas A. Buchberger, Jr. , Samer Banna
发明人: Dmitry Lubomirsky , Jennifer Y. Sun , Mark Markovsky , Konstantin Makhratchev , Douglas A. Buchberger, Jr. , Samer Banna
CPC分类号: H02N13/00 , H01L21/67103
摘要: Electrostatic chucks (ESCs) with RF and temperature uniformity are described. For example, an ESC includes a top dielectric layer. An upper metal portion is disposed below the top dielectric layer. A second dielectric layer is disposed above a plurality of pixilated resistive heaters and surrounded in part by the upper metal portion. A third dielectric layer is disposed below the second dielectric layer, with a boundary between the third dielectric layer and the second dielectric layer. A plurality of vias is disposed in the third dielectric layer. A bus power bar distribution layer is disposed below and coupled to the plurality of vias. A fourth dielectric layer is disposed below the bus bar power distribution layer, with a boundary between the fourth dielectric layer and the third dielectric layer. A metal base is disposed below the fourth dielectric layer. The metal base includes a plurality of high power heater elements housed therein.
摘要翻译: 描述了具有RF和温度均匀性的静电卡盘(ESCs)。 例如,ESC包括顶部电介质层。 上部金属部分设置在顶部电介质层的下方。 第二电介质层设置在多个像素化电阻加热器的上方,并且被上部金属部分部分地包围。 第三电介质层设置在第二电介质层的下方,第三介电层和第二电介质层之间具有边界。 多个通孔设置在第三电介质层中。 总线功率棒分布层设置在多个通孔的下方并耦合到多个通孔。 第四电介质层设置在母线功率分配层的下方,第四电介质层和第三电介质层之间具有边界。 金属基底设置在第四电介质层的下方。 金属基座包括容纳在其中的多个高功率加热器元件。
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