公开(公告)号：US5337015A

公开(公告)日：1994-08-09

申请号：US75628

申请日：1993-06-14

申请人： Naftali E. Lustig ,  Randall M. Feenstra ,  William L. Guthrie

发明人： Naftali E. Lustig ,  Randall M. Feenstra ,  William L. Guthrie

IPC分类号： B24B37/013 ,  G01B7/34 ,  G01D5/24 ,  G01R27/26

CPC分类号： B24B37/013 ,  G01B7/345 ,  G01D5/2405

摘要： An in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control.

摘要翻译： 公开了一种在半导体晶片的顶表面上的电介质层的用于化学机械抛光（CMP）的原位厚度监测/终点检测方法和装置。 该装置包括中心和保护电极以及相关联的电子电路，包括用于将与电介质层厚度成反比的电流​​转换成对应的模拟电压的高频低电压信号发生装置。 当晶片被抛光时，位置检测装置触发模数转换器将模拟电压转换为数字信号，同时晶片位于检测区域内。 控制装置收集与用于处理的厚度数据相对应的数字信号和CMP装置控制。

公开(公告)号：US5633195A

公开(公告)日：1997-05-27

申请号：US532376

申请日：1995-09-22

申请人： William L. Guthrie ,  Naftali E. Lustig

发明人： William L. Guthrie ,  Naftali E. Lustig

IPC分类号： B23K26/00 ,  B23K26/16 ,  C23C14/14 ,  C23C14/34 ,  C23C14/58 ,  C23C26/00 ,  H01L21/268 ,  H01L21/306 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/26

CPC分类号： C23C14/5813 ,  C23C14/14 ,  C23C14/34 ,  H01L21/32115

摘要： A method of laser planarizing metallic thin films minimizes the laser fluences required to melt or nearly melt the metalization. This is accomplished by reducing the optical reflectivity of the metallic lines and vias by using textured thin films. This reduction of optical reflectivity, in turn, reduces the minimum fluence needed to melt or nearly melt the metal using a laser, thus improving the process window and minimizing the damage to the surrounding media.

摘要翻译： 激光平面化金属薄膜的方法使得融化或几乎熔化金属化所需的激光能量密度最小化。 这是通过使用纹理化薄膜来减少金属线和通孔的光学反射率来实现的。 光学反射率的这种降低又降低了使用激光熔化或几乎熔化金属所需的最小注量，从而改善了工艺窗口并使对周围介质的损害最小化。

公开(公告)号：US07011565B2

公开(公告)日：2006-03-14

申请号：US10405421

申请日：2003-04-01

申请人： Manoocher Birang ,  Allan Gleason ,  William L. Guthrie

发明人： Manoocher Birang ,  Allan Gleason ,  William L. Guthrie

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D18/00 ,  G01B11/06 ,  G01B11/0683

摘要： The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

公开(公告)号：US07255629B2

公开(公告)日：2007-08-14

申请号：US11532498

申请日：2006-09-15

申请人： Manoocher Birang ,  Allan Gleason ,  William L. Guthrie

发明人： Manoocher Birang ,  Allan Gleason ,  William L. Guthrie

IPC分类号： B24B49/00

CPC分类号： B24B37/205 ,  B24B37/013 ,  B24B47/12 ,  B24B49/04 ,  B24B49/12 ,  B24B51/00 ,  B24D18/00 ,  G01B11/06 ,  G01B11/0683

摘要： The polishing pad for a chemical mechanical polishing apparatus, and a method of making the same. The polishing pad has a covering layer with a polishing surface and a backing layer which is adjacent to the platen. A first opening in the covering layer with a first cross-sectional area and a second opening in the backing layer with a second, different cross-sectional area form an aperture through the polishing pad. A substantially transparent polyurethane plug is positioned in the aperture, and an adhesive material fixes the plug in the aperture.

摘要翻译： 用于化学机械抛光装置的抛光垫及其制造方法。 抛光垫具有与抛光表面相邻的覆盖层和与压板相邻的背衬层。 具有第一横截面积的覆盖层中的第一开口和具有第二不同横截面积的背衬层中的第二开口形成穿过抛光垫的孔。 基本上透明的聚氨酯塞被定位在孔中，并且粘合剂材料将塞子固定在孔中。

公开(公告)号：US5795215A

公开(公告)日：1998-08-18

申请号：US667221

申请日：1996-06-19

申请人： William L. Guthrie ,  Tsungnan Cheng ,  Sen-Hou Ko ,  Harry Q. Lee ,  Michael T. Sherwood ,  Norm Shendon

发明人： William L. Guthrie ,  Tsungnan Cheng ,  Sen-Hou Ko ,  Harry Q. Lee ,  Michael T. Sherwood ,  Norm Shendon

IPC分类号： B24B5/00

CPC分类号： B24B5/00

摘要： A process using a retaining ring assembly of a carrier head to precompress a polishing pad to reduce or minimize the edge effect in a chemical mechanical polishing process.

摘要翻译： 使用载体头的保持环组件来预压缩抛光垫以减少或最小化化学机械抛光工艺中的边缘效应的方法。

公开(公告)号：US4702792A

公开(公告)日：1987-10-27

申请号：US791862

申请日：1985-10-28

申请人： Ming-Fea Chow ,  William L. Guthrie ,  Frank B. Kaufman

发明人： Ming-Fea Chow ,  William L. Guthrie ,  Frank B. Kaufman

IPC分类号： H01L21/3205 ,  H01L21/304 ,  H01L21/306 ,  H01L21/60 ,  H01L21/768 ,  H05K3/46 ,  C23F1/00 ,  H05K3/26

CPC分类号： H01L21/3212 ,  H01L21/7684 ,  H01L21/76885 ,  H05K3/4644

摘要： The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric material becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

摘要翻译： 本发明公开了一种形成细导电线，图案和连接器的方法，并且在电子器件的形成中特别有用。 该方法包括一系列步骤，其中：将聚合物材料施加到基底上; 将聚合物材料图案化以在聚合物材料中形成开口，其内部或其组合; 随后，将导电材料施加到图案化聚合物材料上，使得其至少填充聚合物材料中存在的开口和空间; 并且使用化学机械抛光从多孔材料的外主表面除去过量的导电材料，以至少露出聚合材料的外表面。 剩余的结构具有平坦的外表面，其中填充图案化聚合物材料中的开口和空间的导电材料变成由聚合材料包围的特征，例如细线，图案和连接器。 聚合物材料可以作为绝缘体留在原位或移除，留下基底上的导电特征。

公开(公告)号：US06051499A

公开(公告)日：2000-04-18

申请号：US982823

申请日：1997-12-02

申请人： Robert D. Tolles ,  William L. Guthrie ,  Jeffrey Marks ,  Tsungnan Cheng ,  Semyon Spektor ,  Ivan A. Ocanada ,  Norm Shendon

发明人： Robert D. Tolles ,  William L. Guthrie ,  Jeffrey Marks ,  Tsungnan Cheng ,  Semyon Spektor ,  Ivan A. Ocanada ,  Norm Shendon

IPC分类号： H01L21/304 ,  B24B37/04 ,  B24B57/02 ,  B24B1/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： Slurry is provided to the surface of the polishing pad by pumping the slurry up through a central port, or by dripping the slurry down onto the surface of the polishing pad from a slurry feed tube. A slurry wiper, which may have one or more flexible members, sweeps the slurry evenly and thinly across the polishing pad. A control system coordinates the distribution of slurry to the polishing pad with the motion of the carrier head.

摘要翻译： 通过将浆料向上泵送通过中心口，或通过从浆料进料管将浆料向下滴落到抛光垫的表面上而将浆料提供到抛光垫的表面。 可以具有一个或多个柔性构件的浆料刮水器将抛光浆料均匀且薄薄地扫过抛光垫。 控制系统通过载体头的运动来协调浆料与抛光垫的分布。

公开(公告)号：US4954142A

公开(公告)日：1990-09-04

申请号：US285435

申请日：1989-03-07

申请人： Jeffrey W. Carr ,  Lawrence D. David ,  William L. Guthrie ,  Frank B. Kaufman ,  William J. Patrick ,  Kenneth P. Rodbell ,  Robert W. Pasco ,  Anton Nenadic

发明人： Jeffrey W. Carr ,  Lawrence D. David ,  William L. Guthrie ,  Frank B. Kaufman ,  William J. Patrick ,  Kenneth P. Rodbell ,  Robert W. Pasco ,  Anton Nenadic

IPC分类号： B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/48

CPC分类号： H01L21/4871 ,  C09G1/02 ,  H01L21/4864

摘要： Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps;obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; andcontacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt.The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

摘要翻译： 公开了电子部件基板的化学研磨方法。 该方法包括以下步骤： 获得其上具有至少两个特征的衬底，其中相对于特定蚀刻剂具有不同的蚀刻速率; 以及使所述基板与抛光垫接触，同时使所述基板与含有所述蚀刻剂的浆料接触，其中所述浆料包括磨料颗粒，过渡金属螯合盐和所述盐的溶剂。 化学铣削使得至少两个特征基本上共面。 还公开了化学研磨浆料。

公开(公告)号：US4789648A

公开(公告)日：1988-12-06

申请号：US791887

申请日：1985-10-28

申请人： Melanie M. Chow ,  John E. Cronin ,  William L. Guthrie ,  Carter W. Kaanta ,  Barbara Luther ,  William J. Patrick ,  Kathleen A. Perry ,  Charles L. Standley

发明人： Melanie M. Chow ,  John E. Cronin ,  William L. Guthrie ,  Carter W. Kaanta ,  Barbara Luther ,  William J. Patrick ,  Kathleen A. Perry ,  Charles L. Standley

IPC分类号： H01L21/3205 ,  H01L21/302 ,  H01L21/304 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/768 ,  H05K3/04 ,  H05K3/10 ,  H05K3/46 ,  H01L21/306

CPC分类号： H01L21/7681 ,  H01L21/304 ,  H01L21/32134 ,  H01L21/7684 ,  H01L21/76877 ,  H05K3/04 ,  H05K3/107 ,  H05K3/4644

摘要： Patterned conductive lines are formed simultaneously with stud via connections through an insulation layer to previously formed underlying patterned conductive lines in multilevel VLSI chip technology. A first planarized layer of insulation is deposited over a first level of patterned conductive material to which contacts are to be selectively established. The first layer then is covered by an etch stop material. Contact holes are defined in the etch stop material at locations where stud connectors are required. The first layer of insulation is not etched at this time.Next, a second planarized layer of insulation, is deposited over the etch stop material. The second layer insulation, in turn, is etched by photolithography down to the etch stop material to define desired wiring channels, some of which will be in alignment with the previously formed contact holes in the etch stop material. In those locations where the contact holes are exposed, the etching is continued into the first layer of insulation to uncover the underlying first level of patterned conductive material.The channels and via holes are overfilled with metallization. The excess metallization is removed by etching or by chem-mech (chemical-mechanical) polishing.

摘要翻译： 图案化的导线通过连接通过绝缘层与螺柱同时形成，以预先形成的多层VLSI芯片技术中的下面的图案化导电线。 第一平坦化绝缘层沉积在要选择性地建立触点的图案化导电材料的第一层上。 第一层然后被蚀刻停止材料覆盖。 在需要螺柱连接器的位置处，在蚀刻停止材料中限定接触孔。 此时第一层绝缘层不被蚀刻。 接下来，将第二平坦化绝缘层沉积在蚀刻停止材料上。 再次通过光刻将第二层绝缘层蚀刻到蚀刻停止材料上，以限定所需的布线通道，其中的一些布线通道将与蚀刻停止材料中先前形成的接触孔对准。 在暴露接触孔的那些位置中，蚀刻继续进入第一绝缘层，以露出图案化的导电材料的下面的第一层。 通道和通孔充满金属化。 通过蚀刻或化学机械（chemical-mechanical）抛光去除多余的金属化。

公开(公告)号：US20080098170A1

公开(公告)日：2008-04-24

申请号：US11584824

申请日：2006-10-23

申请人： William L. Guthrie ,  Joe-Ming Cheng ,  Nyles Norbert Heise

发明人： William L. Guthrie ,  Joe-Ming Cheng ,  Nyles Norbert Heise

IPC分类号： G06F13/00

CPC分类号： G06F12/0866 ,  G06F2212/601

摘要： A desired cache size in a disk drive is established, and no reordering algorithm is performed on commands in the cache until the desired size is reached. An optimal subset size is also established. Then, an optimization algorithm is performed on all commands in the cache, with only the commands in the optimal subset being output for execution. The cache is refilled to the desired size, and the process is repeated.

摘要翻译： 建立磁盘驱动器中期望的高速缓存大小，并且不对缓存中的命令执行重新排序算法，直到达到期望的大小。 还建立了最佳子集大小。 然后，对缓存中的所有命令执行优化算法，只有最优子集中的命令被输出才能执行。 将高速缓存重新填充到所需的大小，并重复该过程。