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    Semiconductor laser devices
    3.
    发明授权
    Semiconductor laser devices 失效
    半导体激光器件

    公开(公告)号：US4841536A

    公开(公告)日：1989-06-20

    申请号：US850685

    申请日：1986-04-11

    申请人： Aiko Ohishi ,  Motohisa Hirao ,  Naoki Chinone ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Hiroyoshi Matsumura

    发明人： Aiko Ohishi ,  Motohisa Hirao ,  Naoki Chinone ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Hiroyoshi Matsumura

    IPC分类号： H01S5/227

    CPC分类号： H01S5/227 ,  H01S5/2275

    摘要： This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.

    摘要翻译： 本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器，在台面条的两侧形成厚半导体层，使得所得到的pn 结点具有电流阻塞功能。 本发明还公开了一种半导体激光器，其中在形成反向台面条之前进行上述p-n结的形成，并且引入离子注入以形成p-n结。 此外，本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。 形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下，可以得到漏电流小且时间稳定的半导体器件。

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US4426700A

    公开(公告)日：1984-01-17

    申请号：US260744

    申请日：1981-05-05

    申请人： Motohisa Hirao ,  Atsutoshi Doi ,  Michiharu Nakamura ,  Shinji Tsuji ,  Takao Mori

    发明人： Motohisa Hirao ,  Atsutoshi Doi ,  Michiharu Nakamura ,  Shinji Tsuji ,  Takao Mori

    IPC分类号： H01S5/00 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/2275

    摘要： A buried-heterostructure semiconductor laser including a mesa-shaped optical confinement region having an active layer and a clad layer and disposed on a semiconductor substrate; a burying layer burying both side surfaces of the region; and at least one p-n junction so formed inside the burying layer in parallel to the active layer as to be brought under the reversely biased state during the operation of the laser; wherein surface protection semiconductor layers are formed on the mesa-shaped optical confinement region and on the burying layer, respectively, for protecting the semiconductor assembly in the arrangement such that these surface protection semiconductor layers do not come into direct contact with each other. Even if the forbidden band gas of these surface protection semiconductor layers are relatively small, it is possible to realize a semiconductor laser having an extremely small leakage current and reduced variance of threshold current values, while protecting the surface of the multi-layer semiconductor layers.

    摘要翻译： 一种掩埋异质结构半导体激光器，包括具有有源层和覆层的台面形状的光限制区域，并设置在半导体衬底上; 埋藏在该区域的两个侧表面上的掩埋层; 以及在激光器的工作过程中平行于活性层在掩埋层内部形成的至少一个p-n结，使其处于反向偏置状态; 其中表面保护半导体层分别形成在台状光限制区域和掩埋层上，用于保护半导体组件的布置，使得这些表面保护半导体层不彼此直接接触。 即使这些表面保护半导体层的禁带宽度相对较小，也可以在保护多层半导体层的表面的同时实现具有极小的漏电流和减小阈值电流值的方差的半导体激光器。

    Semiconductor laser device including an arrangement for preventing laser degradation caused by excessive current flow
    6.
    发明授权
    Semiconductor laser device including an arrangement for preventing laser degradation caused by excessive current flow 失效
    半导体激光装置包括用于防止由过大电流引起的激光劣化的装置

    公开(公告)号：US4366569A

    公开(公告)日：1982-12-28

    申请号：US191293

    申请日：1980-09-26

    申请人： Motohisa Hirao ,  Michiharu Nakamura ,  Atsutoshi Doi ,  Shinji Tsuji ,  Yutaka Takeda ,  Takao Mori

    发明人： Motohisa Hirao ,  Michiharu Nakamura ,  Atsutoshi Doi ,  Shinji Tsuji ,  Yutaka Takeda ,  Takao Mori

    IPC分类号： H01L21/208 ,  H01L33/16 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01S5/227 ,  H01S3/19

    CPC分类号： H01S5/227 ,  H01S5/2275

    摘要： Disclosed herein is a semiconductor laser device including at least an active region consisting of a semiconductor material and a semiconductor region consisting of a material having a different composition from that of the active region and confining the active region, wherein at least one p-n junction is formed inside the confining region in parallel to the active region and a current flowing through the active region at a field strength below an electric field causing degradation of the semiconductor laser device is allowed to flow through regions other than the active region via the p-n junction by controlling the impurity concentration of the region having the p-n junction. The semiconductor laser device does not undergo catastrophic degradation even when applied with a current higher than a rated value.

    摘要翻译： 本发明公开了一种半导体激光器件，其至少包括由半导体材料构成的有源区和由与有源区的组成不同的材料构成的半导体区域，并限制该有源区，其中形成至少一个pn结 在限制区域内与激活区域平行地流过电场强度低于电场的电流，导致半导体激光器件劣化的电流经由pn结通过控制区域流过有源区域以外的区域 具有pn结的区域的杂质浓度。 即使施加高于额定值的电流，半导体激光器也不会发生灾难性的劣化。

    Semiconductor devices
    7.
    发明授权
    Semiconductor devices 失效
    半导体器件

    公开(公告)号：US4905057A

    公开(公告)日：1990-02-27

    申请号：US325123

    申请日：1989-03-17

    申请人： Akio Ohishi ,  Takao Kuroda ,  Shinji Tsuji ,  Motohisa Hirao ,  Hiroyoshi Matsumura

    发明人： Akio Ohishi ,  Takao Kuroda ,  Shinji Tsuji ,  Motohisa Hirao ,  Hiroyoshi Matsumura

    IPC分类号： H01S5/227

    CPC分类号： H01S5/227 ,  H01S5/2275

    摘要： A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.

    摘要翻译： 通过在掩埋层中并入pnp或npn结，可以获得阈值电流和漏电流小的半导体激光器件或晶体管，其阈值电流和漏电流不随时间增加， 包含InGaAsP的有源区，用InGaAsP形成接合的中间层，用注入离子调节中间层的导电类型，并指定构成中间层的半导体的能带宽度。