公开(公告)号：US4905060A

公开(公告)日：1990-02-27

申请号：US198198

申请日：1988-05-25

申请人： Naoki Chinone ,  Hisao Nakashima ,  Makoto Okai ,  Shinji Tsuji

发明人： Naoki Chinone ,  Hisao Nakashima ,  Makoto Okai ,  Shinji Tsuji

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/343

CPC分类号： H01L33/305 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/20 ,  H01S5/223 ,  H01S5/343 ,  H01S5/34313 ,  H01S5/3434 ,  H01S5/2059 ,  H01S5/34306

摘要： A light emitting device has a multiple layer film structure such as a multiple quantum well (MQW) structure which is made of an indium system compound semiconductor not containing phosphorus, wherein part of a region or regions of the multiple film structure is (are) a disordered region or regions disordered by introduction of an inpurity.

公开(公告)号：US4894835A

公开(公告)日：1990-01-16

申请号：US249870

申请日：1988-09-27

申请人： Kazuhisa Uomi ,  Shinji Tsuji ,  Makoto Okai ,  Shinji Sakano ,  Naoki Chinone

发明人： Kazuhisa Uomi ,  Shinji Tsuji ,  Makoto Okai ,  Shinji Sakano ,  Naoki Chinone

IPC分类号： H01S5/00 ,  H01S5/187 ,  H01S5/34 ,  H01S5/42

CPC分类号： H01S5/187 ,  H01S5/42 ,  H01S5/3428

摘要： A surface emitting laser diode having a two-dimensionally extended light emitting region is disclosed in which the light emitting region includes a plurality of stripe regions and gap regions each formed between adjacent stripe regions, the stripe regions are optically coupled with each other through the gap regions, and an even-order diffraction grating is formed in at least a part of the light emitting area. The laser diode having the above structure can emit a high-intensity, well-collimated laser beam.

公开(公告)号：US4885753A

公开(公告)日：1989-12-05

申请号：US256318

申请日：1988-10-07

申请人： Makoto Okai ,  Kazuhisa Uomi ,  Shinji Tsuji ,  Shinji Sakano ,  Naoki Chinone

发明人： Makoto Okai ,  Kazuhisa Uomi ,  Shinji Tsuji ,  Shinji Sakano ,  Naoki Chinone

IPC分类号： H01S5/00 ,  H01S3/08 ,  H01S3/082 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/10 ,  H01S5/12 ,  H01S5/125 ,  H01S5/40

CPC分类号： H01S5/06256 ,  H01S5/0265 ,  H01S5/06258 ,  H01S5/1032 ,  H01S5/1215 ,  H01S5/125 ,  H01S5/4031

摘要： A tunable semiconductor laser device has an active region for generating light, and a feedback region which is optically coupled with the active region and includes a perturbation portion having non-uniform perturbation period. In this semiconductor laser device, the light intensity distribution in the feedback region is changed to vary the degree of coupling of light propagated in the feedback region with a desired part of the perturbation portion, thereby varying the wavelength of emitted light.

摘要翻译： 可调谐半导体激光器件具有用于产生光的有源区域和与有源区域光学耦合并包括具有不均匀扰动周期的扰动部分的反馈区域。 在该半导体激光器件中，改变反馈区域中的光强度分布，以改变在反馈区域中传播的光与扰动部分的所需部分的耦合度，从而改变发射光的波长。

公开(公告)号：US4873691A

公开(公告)日：1989-10-10

申请号：US224726

申请日：1988-07-27

申请人： Kazuhisa Uomi ,  Shinji Tsuji ,  Shinji Sakano ,  Makoto Okai ,  Naoki Chinone

发明人： Kazuhisa Uomi ,  Shinji Tsuji ,  Shinji Sakano ,  Makoto Okai ,  Naoki Chinone

IPC分类号： H01S5/00 ,  H01S3/1055 ,  H01S5/042 ,  H01S5/0625 ,  H01S5/125 ,  H01S5/34

CPC分类号： B82Y20/00 ,  H01S3/1055 ,  H01S5/06256 ,  H01S5/125 ,  H01S5/34

摘要： A wavelength-tunable semiconductor laser having an active part and an external waveguide part is disclosed. The external waveguide part has a diffraction grating, such as a distributed Bragg reflector, and a quantum well structure optically coupled to the diffraction grating, together with electrodes for impressing an electric field to the quantum well structure. By applying the electric filed to the quantum well structure, the refractive index in the optically coupled diffraction grating/quantum well structure, and light oscillation wavelength in the external waveguide part, can be varied.

摘要翻译： 公开了一种具有有源部分和外部波导部分的波长可调谐半导体激光器。 外部波导部分具有衍射光栅，例如分布式布拉格反射器，以及光学耦合到衍射光栅的量子阱结构，以及用于向量子阱结构施加电场的电极。 通过将电场施加到量子阱结构，可以改变光耦合衍射光栅/量子阱结构中的折射率和外部波导部分中的光振荡波长。

公开(公告)号：US4841536A

公开(公告)日：1989-06-20

申请号：US850685

申请日：1986-04-11

申请人： Aiko Ohishi ,  Motohisa Hirao ,  Naoki Chinone ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Hiroyoshi Matsumura

发明人： Aiko Ohishi ,  Motohisa Hirao ,  Naoki Chinone ,  Shinji Tsuji ,  Hitoshi Nakamura ,  Hiroyoshi Matsumura

IPC分类号： H01S5/227

CPC分类号： H01S5/227 ,  H01S5/2275

摘要： This invention discloses a semiconductor laser capable of a high temperature and high output operation by forming a mesa stripe having an active layer in a reverse triangular mesa shape and forming thick semiconductor layers on both sides of the mesa stripe in such a manner that the resulting p-n junctions have a current blocking function. The invention discloses also a semiconductor laser wherein the formation of the p-n junctions described above is made before the formation of the reverse mesa stripe, and ion implantation is introduced in order to form the p-n junctions. Furthermore, the invention relates to transistors and semiconductor lasers using InGaAsP type quaternary compounds as the semiconductor. The quaternary compounds having a composition in which an energy band gap is from 1.2 to 1.4 eV are formed in a thickness of up to 1 .mu.m, and there can be thus obtained semiconductor devices having a small leakage current and being stable with time.

摘要翻译： 本发明公开了一种能够通过形成具有反三角台面形状的有源层的台面条形状的高温高输出操作的半导体激光器，在台面条的两侧形成厚半导体层，使得所得到的pn 结点具有电流阻塞功能。 本发明还公开了一种半导体激光器，其中在形成反向台面条之前进行上述p-n结的形成，并且引入离子注入以形成p-n结。 此外，本发明涉及使用InGaAsP型四元化合物作为半导体的晶体管和半导体激光器。 形成其能带隙为1.2〜1.4eV的组成的四元化合物的厚度为1μm以下，可以得到漏电流小且时间稳定的半导体器件。

公开(公告)号：US4665528A

公开(公告)日：1987-05-12

申请号：US681820

申请日：1984-12-14

申请人： Naoki Chinone ,  Shinji Tsuji ,  Yoshihisa Fujisaki ,  Yasutoshi Kashiwada ,  Motohisa Hirao

发明人： Naoki Chinone ,  Shinji Tsuji ,  Yoshihisa Fujisaki ,  Yasutoshi Kashiwada ,  Motohisa Hirao

IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S3/19

CPC分类号： H01S5/1225 ,  H01S5/106 ,  H01S5/1215

摘要： Disclosed is a distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different bragg wavelength, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation.

摘要翻译： 公开了一种具有光栅的分布反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。 光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。 激光装置可以实现稳定的单纵模振荡。

公开(公告)号：US4775980A

公开(公告)日：1988-10-04

申请号：US759136

申请日：1985-07-26

申请人： Naoki Chinone ,  Shinji Tsuji ,  Yoshihisa Fujisaki ,  Yasutoshi Kashiwada ,  Motohisa Hirao ,  Hitoshi Nakamura ,  Akio Oishi ,  Kenji Hiruma ,  Tadashi Fukuzawa ,  Hiroyoshi Matumura

发明人： Naoki Chinone ,  Shinji Tsuji ,  Yoshihisa Fujisaki ,  Yasutoshi Kashiwada ,  Motohisa Hirao ,  Hitoshi Nakamura ,  Akio Oishi ,  Kenji Hiruma ,  Tadashi Fukuzawa ,  Hiroyoshi Matumura

IPC分类号： H01S5/10 ,  H01S5/12 ,  H01S5/183 ,  H01S3/08 ,  H01S3/19

CPC分类号： H01S5/18305 ,  H01S5/12 ,  H01S5/106 ,  H01S5/1206 ,  H01S5/1215 ,  H01S5/1225 ,  H01S5/18308 ,  H01S5/2072

摘要： A distributed feedback semiconductor laser provided with a grating which effects optical feedback by means of periodic corrugation disposed inside an optical resonator. The optical resonator has at least two regions having different Bragg wavelengths, and these regions are arranged longitudinally in the direction of an optical axis. The laser device can realize stable single longitudinal mode oscillation through variation of the refractive indexes of the regions nonuniformly around an average value.

摘要翻译： 一种配置有光栅的分布式反馈半导体激光器，其通过设置在光学谐振器内部的周期性波纹来实现光学反馈。 光谐振器具有至少两个具有不同布拉格波长的区域，并且这些区域沿光轴方向纵向布置。 激光装置可以通过使区域的折射率不均匀地围绕平均值变化来实现稳定的单纵模振荡。

公开(公告)号：US5340637A

公开(公告)日：1994-08-23

申请号：US895430

申请日：1992-06-05

申请人： Makoto Okai ,  Shinji Tsuji ,  Akio Ohishi ,  Motohisa Hirao ,  Hiroyoshi Matsumura ,  Tatsuo Harada ,  Toshiaki Kita ,  Hideki Taira

发明人： Makoto Okai ,  Shinji Tsuji ,  Akio Ohishi ,  Motohisa Hirao ,  Hiroyoshi Matsumura ,  Tatsuo Harada ,  Toshiaki Kita ,  Hideki Taira

IPC分类号： G02B5/18 ,  G03F1/00 ,  B32B3/28 ,  G02B27/42 ,  G03C5/00

CPC分类号： G02B5/1857 ,  Y10T428/2457 ,  Y10T428/24612 ,  Y10T428/24942

摘要： A method of fabricating diffraction gratings wherein a photomask is arranged on a substrate which is coated with a photoresist, light is to be incident thereupon at an acute angle relative to the normal direction of the photomask, and a bright/dark pattern is formed on said photoresist by the interference of the transmission light that has passed through the photomask and the diffraction light. The invention further deals with a photomask used for the above method.

摘要翻译： 一种制造衍射光栅的方法，其中光掩模布置在涂覆有光致抗蚀剂的基底上，光将相对于光掩模的法线方向以锐角入射到其上，并且在所述光掩模上形成明暗图案 通过透过光掩模的透射光的干涉和衍射光的光致抗蚀剂。 本发明还涉及用于上述方法的光掩模。

公开(公告)号：US20120327965A1

公开(公告)日：2012-12-27

申请号：US13521555

申请日：2010-02-02

申请人： Kazunori Shinoda ,  Koichiro Adachi ,  Shinji Tsuji ,  Masahiro Aoki

发明人： Kazunori Shinoda ,  Koichiro Adachi ,  Shinji Tsuji ,  Masahiro Aoki

IPC分类号： H01S5/028 ,  H01S5/024 ,  H01L21/02

CPC分类号： H01S5/125 ,  H01S5/0265 ,  H01S5/0267 ,  H01S5/187 ,  H01S5/2081

摘要： In order to provide a semiconductor laser element or an integrated optical device with high reliability, a horizontal-cavity semiconductor laser or an optical module includes a deeply dug DBR mirror serving as a cavity mirror, the deeply dug DBR mirror being composed of a material that is lattice-matched to a substrate and that has a band gap energy that does not absorb light emitted from an active layer.

摘要翻译： 为了提供具有高可靠性的半导体激光元件或集成光学器件，水平腔半导体激光器或光学模块包括用作腔镜的深钻DBR镜，深冲DBR镜由以下材料组成的材料组成： 与衬底晶格匹配，并且具有不吸收从有源层发射的光的带隙能量。

公开(公告)号：US20120230361A1

公开(公告)日：2012-09-13

申请号：US13512595

申请日：2010-11-29

申请人： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Kazunori Shinoda ,  Shinji Tsuji

发明人： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Kazunori Shinoda ,  Shinji Tsuji

IPC分类号： H01S5/18

CPC分类号： H01S5/18 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01S5/02212 ,  H01S5/0224 ,  H01S5/02268 ,  H01S5/02284 ,  H01S5/0267 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2224 ,  H01S5/4025 ,  H01S5/4031

摘要： Specifically, provided is a horizontal-cavity surface-emitting laser including, on a semiconductor substrate: a cavity structure; a waveguide layer; and a reflecting part, wherein a first electrode provided on the semiconductor substrate along side regions of the cavity structure and the reflecting part and a second electrode provided on the main surface of the cavity structure are provided, the first electrode includes an electrode (1) that is provided around one side region of the reflecting part located in the direction intersecting with the traveling direction of light guided through the waveguide layer and an electrode (2) provided around one side region of the cavity structure and the other side region of the reflecting part that are located in the direction parallel with the traveling direction of light guided through the waveguide layer, and the shape of the electrode (2) has different widths at at least two positions.

摘要翻译： 具体地，提供了一种水平腔表面发射激光器，其包括在半导体衬底上：空腔结构; 波导层; 以及反射部，其中，设置在所述半导体衬底上的沿着所述空腔结构的侧面区域和所述反射部分的第一电极和设置在所述空腔结构的主表面上的第二电极，所述第一电极包括电极（1） 设置在与通过波导层引导的光的行进方向相交的方向上的反射部的一个侧面区域和设置在该空腔结构的一个侧面区域的反射部的另一侧区域的电极（2） 位于与通过波导层引导的光的行进方向平行的方向的部分，并且电极（2）的形状在至少两个位置处具有不同的宽度。