公开(公告)号：US4905057A

公开(公告)日：1990-02-27

申请号：US325123

申请日：1989-03-17

申请人： Akio Ohishi ,  Takao Kuroda ,  Shinji Tsuji ,  Motohisa Hirao ,  Hiroyoshi Matsumura

发明人： Akio Ohishi ,  Takao Kuroda ,  Shinji Tsuji ,  Motohisa Hirao ,  Hiroyoshi Matsumura

IPC分类号： H01S5/227

CPC分类号： H01S5/227 ,  H01S5/2275

摘要： A semiconductor device such as a semiconductor laser device or a transistor which is small in both threshold current and leakage current and exhibits no increase with time in the threshold current and leakage current can be obtained by incorporating pnp or npn junctions in a buried layer which coats an active region containing InGaAsP, forming the mid layer of the junctions with InGaAsP, adjusting the conductivity type of the mid layer with an implanted ion and specifying the energy band width of a semiconductor constituting the mid layer.

摘要翻译： 通过在掩埋层中并入pnp或npn结，可以获得阈值电流和漏电流小的半导体激光器件或晶体管，其阈值电流和漏电流不随时间增加， 包含InGaAsP的有源区，用InGaAsP形成接合的中间层，用注入离子调节中间层的导电类型，并指定构成中间层的半导体的能带宽度。

公开(公告)号：US4819036A

公开(公告)日：1989-04-04

申请号：US60869

申请日：1987-05-04

申请人： Takao Kuroda ,  Akiyoshi Watanabe ,  Shinji Tsuji ,  Akio Ohishi ,  Hiroyoshi Matsumura

发明人： Takao Kuroda ,  Akiyoshi Watanabe ,  Shinji Tsuji ,  Akio Ohishi ,  Hiroyoshi Matsumura

IPC分类号： H01S5/00 ,  B82Y20/00 ,  H01L29/15 ,  H01L29/80 ,  H01L31/10 ,  H01S5/34 ,  H01S5/343

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L29/155 ,  H01S5/343 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34313 ,  H01S5/34326 ,  H01S5/3436 ,  H01S5/34366

摘要： A novel method which enables a quaternary III-V group crystal to be readily formed on a III-V group crystal so that the former crystal lattice-matches with the latter crystal. More specifically, it is easy to produce a superlattice structure on a III-V group crystal substrate, the superlattice structure consisting of a first III-V group (hereinafter referred to as "III.sup.1 -V.sup.1 ") binary crystal layer which lattice-matches with the substrate, and a III-V group (III.sup.1 -III.sup.2 -V.sup.2) ternary crystal layer which similarly lattice-matches with the substrate. It is possible to obtain an even more stable superlattice layer by selecting the ratio between the film thickness of the (III.sup.1 -V.sup.1) crystal and the film thickness of the (III.sup.1 -III.sup.2 -V.sup.2) crystal so that, when the superlattice structure is mixed-crystallized spontaneously or by means of impurity doping, the mixed-crystallized composition lattice-matches with the previous crystal.

摘要翻译： PCT No.PCT / JP86 / 00443 Sec。 371日期：1987年5月4日 102（e）日期1987年5月4日PCT提交1986年8月29日PCT公布。 第WO87 / 015222B号公开 日期：1987年3月12日。一种使III-V族晶体易于在III-V族晶体上形成的新方法，使得前一晶格与后一晶体匹配。 更具体地说，容易在III-V族晶体基板上产生超晶格结构，超晶格结构由与第一III-V族（以下称为“III1-V1”）二元晶体层 基板和与基板类似地匹配的III-V族（III1-III2-V2）三元晶体层。 通过选择（III1-V1）晶体的膜厚与（III1-III2-V2）晶体的膜厚之间的比例，可以获得更稳定的超晶格层，使得当超晶格结构混合时 自发结晶或通过杂质掺杂，混合结晶的组合物与先前的晶体匹配。

公开(公告)号：US4288757A

公开(公告)日：1981-09-08

申请号：US56360

申请日：1979-07-10

申请人： Takashi Kajimura ,  Motohisa Hirao ,  Michiharu Nakamura ,  Takao Kuroda ,  Shigeo Yamashita ,  Jun-Ichi Umeda

发明人： Takashi Kajimura ,  Motohisa Hirao ,  Michiharu Nakamura ,  Takao Kuroda ,  Shigeo Yamashita ,  Jun-Ichi Umeda

IPC分类号： H01L21/208 ,  H01S5/00 ,  H01S5/22 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/0025 ,  H01S5/22 ,  H01S5/32308 ,  H01S5/32325

摘要： In certain applications, it is desirable to have a semiconductor laser device having shorter wave lengths of oscillation than are possible with conventional semiconductor lasers. To accomplish this, a semiconductor laser device is formed having a double-hetero structure, which comprises a semiconductor substrate composed of a GaAsP crystal, a first cladding layer formed on the substrate and composed of a GaAlAsP crystal of one conducting type, an active layer formed on the first cladding layer and composed of GaInAsP crystal, and a second cladding layer formed on the active layer and composed of a GaAlAsP crystal of the conducting type reverse to that of the first cladding layer. The cladding layers disposed on both sides of the active layer have a lower refractivity and a larger band gap than the active layer.

摘要翻译： 在某些应用中，期望具有比常规半导体激光器可能的波长波长更短的半导体激光器件。 为了实现这一点，形成具有双异质结构的半导体激光器件，其包括由GaAsP晶体构成的半导体衬底，形成在衬底上并由一种导电类型的GaAlAsP晶体构成的第一覆层，活性层 形成在第一包层上并由GaInAsP晶体构成;以及第二覆层，形成在有源层上并由与第一覆层相反的导电类型的GaAlAsP晶体构成。 设置在有源层两侧的覆层具有比活性层更低的折射率和更大的带隙。

公开(公告)号：US4835581A

公开(公告)日：1989-05-30

申请号：US76765

申请日：1987-07-23

申请人： Takao Kuroda ,  Akiyoshi Watanabe ,  Takao Miyazaki ,  Hiroyoshi Matsumura

发明人： Takao Kuroda ,  Akiyoshi Watanabe ,  Takao Miyazaki ,  Hiroyoshi Matsumura

IPC分类号： H01L29/205 ,  H01L21/338 ,  H01L29/10 ,  H01L29/739 ,  H01L29/778 ,  H01L29/812

CPC分类号： H01L29/7783 ,  H01L29/1025 ,  H01L29/7391

摘要： Disclosed is a semiconductor device comprising a first semiconductor layer, a second semiconductor layer, and a third semiconductor layer which is formed between the first semiconductor layer and the second semiconductor layer and a band gap of which is narrower than that of each of the first and second layers, so that band discontinuities in conduction bands and valence bands of the three layers form a barrier to the third semiconductor layer, and that a tunneling current can flow through the third semmiconductor layer owing to an internal electric field of the third semiconductor layer.

摘要翻译： 公开了一种半导体器件，包括第一半导体层，第二半导体层和形成在第一半导体层和第二半导体层之间的第三半导体层，并且其带隙比第一和第二半导体层 使得三层的导带和价带中的频带不连续性形成对第三半导体层的阻挡，并且由于第三半导体层的内部电场，隧道电流可以流过第三半导体层。

公开(公告)号：US4814838A

公开(公告)日：1989-03-21

申请号：US56657

申请日：1987-06-02

申请人： Takao Kuroda ,  Akiyoshi Watanabe ,  Takao Miyazaki ,  Hiroyoshi Matsumura

发明人： Takao Kuroda ,  Akiyoshi Watanabe ,  Takao Miyazaki ,  Hiroyoshi Matsumura

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/338 ,  H01L29/205 ,  H01L29/36 ,  H01L29/43 ,  H01L29/812 ,  H01L29/80

CPC分类号： H01L29/205 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02576 ,  H01L21/02579 ,  H01L29/365 ,  H01L29/432

摘要： A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed.Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.

摘要翻译： 公开了具有不等晶格常数的两种化合物半导体的半导体器件。 通过使化合物半导体之一与杂质进行原子层掺杂来避免由晶格失配引起的位错等缺陷。 由于这种结构，允许将最佳材料作为复合半导体组合，并且半导体器件具有其性能改进并且其设计多功能性扩大。

公开(公告)号：US4766092A

公开(公告)日：1988-08-23

申请号：US937019

申请日：1986-12-02

申请人： Takao Kuroda ,  Kenji Hiruma ,  Hiroyoshi Matsumura

发明人： Takao Kuroda ,  Kenji Hiruma ,  Hiroyoshi Matsumura

IPC分类号： H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L21/265 ,  H01S5/00

CPC分类号： H01L21/26506 ,  H01L21/02381 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02658 ,  H01S2301/173 ,  H01S2304/04 ,  H01S5/021 ,  H01S5/0422 ,  H01S5/305 ,  H01S5/3054 ,  Y10S148/072 ,  Y10S148/097 ,  Y10S148/119 ,  Y10S438/933 ,  Y10S438/938

摘要： When a semiconductor device is produced by growing epitaxially a compound semiconductor layer on a Si or Ge substrate, lattice matching between the substrate crystal and the compound semiconductor layer to be formed on the substrate can be improved by ion-implanting an ion species element, which increases the lattice constant of Si or Ge as the substrate, into the Si or Ge substrate in order to increase its lattice constant. In comparison with conventional semiconductor devices using Si or Ge into which ion implantation is not made, the semiconductor device produced by the method described above can improve remarkably its characteristics. In the case of a semiconductor laser device, for example, its threshold value drops drastically and its service life can be prolonged remarkably.

摘要翻译： 当通过在Si或Ge衬底上外延生长化合物半导体层来制造半导体器件时，可以通过离子注入离子种类元素来改善衬底晶体和待形成在衬底上的化合物半导体层之间的晶格匹配， 将作为衬底的Si或Ge的晶格常数增加到Si或Ge衬底中，以增加其晶格常数。 与使用不进行离子注入的Si或Ge的常规半导体器件相比，通过上述方法制造的半导体器件可以显着改善其特性。 在半导体激光器件的情况下，例如，其阈值急剧下降，使用寿命显着延长。

公开(公告)号：US20080012048A1

公开(公告)日：2008-01-17

申请号：US11570658

申请日：2005-12-14

申请人： Takao Kuroda

发明人： Takao Kuroda

IPC分类号： H01L27/148 ,  H01L21/339 ,  H01L29/76

CPC分类号： H01L27/14689 ,  H01L27/14806 ,  H01L29/76833

摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.

摘要翻译： 在包括通过绝缘层3设置在半导体衬底1上的转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，导电类型的第二半导体区域5 第一导电类型的第三半导体区域6以及直接位于转移电极2a至2c下方的与半导体衬底1的区域重叠的位置。 第二半导体区域5形成在第一半导体区域4上。 第三半导体区域6形成在第二半导体区域5上，使得当第三半导体区域6被耗尽时第二半导体区域5的电位的最大点8的位置比第三半导体区域5的第三半导体区域5的最大点8的位置更深 半导体区域6不存在。

公开(公告)号：US20060119725A1

公开(公告)日：2006-06-08

申请号：US11332885

申请日：2006-01-17

申请人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

发明人： Takao Kuroda ,  Sei Suzuki ,  Kidera Akito

IPC分类号： H04N5/335

CPC分类号： H04N5/3728 ,  H04N5/357 ,  H04N5/3597

摘要： In making solid state imaging devices smaller and increasing their number of pixels, it is desirable to increase the charge amount that can be handled per unit area of the transfer portions. It is possible to achieve this by making the insulating film thinner, but this leads to electric fields in the semiconductor substrate that are too strong, and causes problems such as the generation of noise and the deterioration of the transfer efficiency. This invention relaxes potential steps in the transfer region by applying, when a signal charge 1 is being read out (t=t2), a high voltage to the electrode 43 for reading out the signal charge, a low voltage to at least one of the electrodes 41, 45-47 for preventing unnecessary mixing of signal charges, and an intermediate voltage between the high voltage and the low voltage to the electrodes 42 and 44, which are adjacent to the electrode 43 to which the high voltage is applied.

摘要翻译： 在使固态成像装置更小并且其像素数量增加的情况下，期望增加可以在转印部分的每单位面积处理的电荷量。 可以通过使绝缘膜更薄而实现这一点，但是这导致半导体衬底中的电场太强，并且引起噪声的产生和传输效率的劣化等问题。 本发明通过在读出信号电荷1（t = t 2 2）时施加向读出信号电荷的电极43施加的高电压，放松了转印区域中的潜在步骤， 低电压至至少一个电极41,45-47，用于防止信号电荷的不必要的混合，以及与电极43相邻的电极42和44的高电压和低电压之间的中间电压， 施加高电压。

公开(公告)号：US5837565A

公开(公告)日：1998-11-17

申请号：US450621

申请日：1995-05-25

申请人： Takao Kuroda ,  Yasuhiro Shiraki

发明人： Takao Kuroda ,  Yasuhiro Shiraki

IPC分类号： H01L29/812 ,  H01L21/20 ,  H01L21/338 ,  H01L29/201 ,  H01L29/205 ,  H01L29/778 ,  H01L29/80

CPC分类号： H01L29/205 ,  H01L29/7783 ,  Y10S438/938

摘要： Disclosed is a semiconductor device comprising an undoped GaAs layer, an intermediate undoped layer and an undoped Ga.sub.1-x Al.sub.x As layer which are successively provided on a substrate made of a semiinsulating GaAs crystal; the intermediate undoped layer being an undoped In.sub.y Ga.sub.1-y As layer, an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs.sub.1-z Sb.sub.z layer, a superlattice layer which includes an undoped In.sub.y Ga.sub.1-y As layer and an undoped GaAs layer, or a superlattice layer which includes an undoped GaAs.sub.1-z Sb layer and an undoped GaAs layer. When applied to a high electron mobility transistor, this semiconductor device affords a high current and a high speed and has the merit of a small dispersion in the threshold voltage thereof.

公开(公告)号：US5451802A

公开(公告)日：1995-09-19

申请号：US145347

申请日：1993-10-29

申请人： Hiroyoshi Komobuchi ,  Takao Kuroda

发明人： Hiroyoshi Komobuchi ,  Takao Kuroda

IPC分类号： H01L29/762 ,  H01L21/339 ,  H01L29/423 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H01L29/78

CPC分类号： H01L29/42396

摘要： A charge transfer device is provided, which includes: a semiconductor substrate having transfer regions for transferring a signal charge; an insulating film formed on the semiconductor substrate; an electrode layer formed above the transfer regions with the insulating film sandwiched therebetween, the electrode layer having high-resistant portions and low-resistant portions alternately provided; and voltage application means for applying a voltage for changing a surface potential of the transfer regions to the low-resistant portions of the electrode layer.

摘要翻译： 提供电荷转移装置，其包括：具有用于传送信号电荷的转移区域的半导体衬底; 形成在半导体衬底上的绝缘膜; 形成在所述转印区域之上的绝缘膜夹在其间的电极层，所述电极层具有高阻抗部分和低阻抗部分交替设置; 以及电压施加装置，用于将转印区域的表面电位改变为电极层的低电阻部分的电压。