摘要:
A semiconductor physical quantity sensor includes a substrate, a beam-structure movable portion and a fixed portion. The beam-structure movable portion is suspended by four anchors formed of polycrystalline films. A rectangular mass is suspended between beams. Movable electrodes project from both sides of the mass. First fixed electrodes and second fixed electrodes are fixedly provided on the surface of the substrate. The substrate has a laminated structure, wherein an oxide film, attaching film, insulating films, conductive film and insulating film are laminated on the substrate. An anchor formed from the conductive film is electrically connected to the attaching film. An electrode pad made of an aluminum film is provided the above the anchor. Because this structure enables the potential of the attaching film to be fixed, parasitic capacitance can be decreased.
摘要:
In a method of manufacturing a dynamic amount sensor including a beam structure and a fixed electrode which are respectively supported by anchor parts of a substrate, opening portions are formed on a first semiconductor substrate where the anchor parts are to be formed. Each of the opening portions is composed of a plurality of stripe-like openings. Then a first thin film for forming the anchor parts and a second thin film are formed on the first semiconductor substrate in that order. After the surface of the second thin film is polished, a second semiconductor substrate is bonded to the polished surface of the second thin film. In this method, because the opening portions are composed of the plurality of stripe-like openings, the second thin film is flattened without having any steps thereon.
摘要:
A semiconductor sensor having a thin-film structure body, in which thin-film structure is prevented from bending due to the internal stress distribution in the thickness direction, is disclosed. A silicon-oxide film is formed as a sacrificial layer on a silicon substrate, and a polycrystalline-silicon thin film is formed on the silicon-oxide film. Thereafter, phosphorus (P) is ion-implanted in the surface of the polycrystalline-silicon thin film, and thereby the surface state of the polycrystalline-silicon thin film is modified. A portion of distribution of stress existing in the thickness direction of the polycrystalline-silicon thin film is changed by this modification, and stress distribution is adjusted. By removal of the silicon-oxide film, a movable member of the polycrystalline-silicon thin film is disposed above the silicon substrate with a gap interposed therebetween.
摘要:
The absorbent article of the present invention comprises: a liquid-pervious surface sheet, a liquid-impervious backside sheet provided at the position opposing said surface sheet, and an absorption body provided between said surface sheet and said backside sheet, wherein the absorbent article comprises an endless compressed groove, surrounding a central part of said absorbent article, which is formed in said surface sheet and said absorption body in the thickness direction, and a plurality of concave parts, provided inside and outside said compressed groove, which are formed in said surface sheet and said absorption body in the thickness direction, and an uncompressed region bordering inner and outer edges of the compressed groove, wherein the closest distance between said compressed groove and the nearest concave parts is greater than the distance between adjacent ones of those same concave parts.
摘要:
A plurality of convex portions that protrude radially outward from a plurality of positions separated in the circumferential direction are provided on the outer peripheral surface of a driven gear. Each convex portion has, in the circumferential direction of the driven gear, a rising surface that rises from a minimum diameter position to a maximum diameter position in the direction opposite the rotational direction of the driven gear, and a falling surface that falls from that maximum diameter position to a minimum diameter position that is adjacent to and in back of that maximum diameter position with respect to the rotational direction of the driven gear. The circumferential length of the falling surface is greater than the circumferential length of the rising surface.
摘要:
An absorbent article package is individually packaged by folding a packaging sheet and an absorbent article in a state where the absorbent article is arranged on the packaging sheet. In a state where the individually-packaged absorbent article is opened, in the packaging sheet and the absorbent article, a first folding line based on which the absorbent article and the packaging sheet are folded towards the topsheet side, and a second folding line based on which the absorbent article and the packaging sheet are folded towards the backsheet side are formed adjacent to each other in the longitudinal direction.
摘要:
According to the present invention, an HCV replicon-replicating cell is produced by a production method including a step of introducing RNA containing an HCV replicon sequence and a selectable marker gene sequence into a Li23 cell or a cured cell derived from a Li23 cell. Further, a full-length HCV RNA-replicating cell is produced by a production method including a step of introducing RNA containing a full-length HCV genome sequence and a selectable marker gene sequence into a Li23 cell or a cured cell derived from a Li23 cell. The use of these cells enables the construction of an HCV life cycle reproduction system that is derived from a cell line other than the HuH-7 cell line and that has capabilities equivalent to those of an HCV life cycle reproduction system derived from the HuH-7 cell line.
摘要:
A plurality of convex portions that protrude radially outward from a plurality of positions separated in the circumferential direction are provided on the outer peripheral surface of a driven gear. Each convex portion has, in the circumferential direction of the driven gear, a rising surface that rises from a minimum diameter position to a maximum diameter position in the direction opposite the rotational direction of the driven gear, and a falling surface that falls from that maximum diameter position to a minimum diameter position that is adjacent to and in back of that maximum diameter position with respect to the rotational direction of the driven gear. The circumferential length of the falling surface is greater than the circumferential length of the rising surface.
摘要:
A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.
摘要:
A mold type semiconductor device includes a semiconductor chip including a semiconductor part; a metallic layer; a solder layer; and a metallic member connecting to the semiconductor chip through the metallic layer and the solder layer. The solder layer is made of solder having yield stress smaller than that of the metallic layer. Even when the semiconductor chip is sealed with a resin mold, the metallic layer is prevented from cracking.