公开(公告)号：US20140014175A1

公开(公告)日：2014-01-16

申请号：US14008807

申请日：2012-03-29

申请人： Norikazu Ito ,  Akira Murao ,  Makoto Onodera ,  Takeshi Ito ,  Shinichiro Inaba

发明人： Norikazu Ito ,  Akira Murao ,  Makoto Onodera ,  Takeshi Ito ,  Shinichiro Inaba

IPC分类号： H01L31/0216

CPC分类号： H01L31/02167 ,  H01L31/022425 ,  H01L31/02363 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/1868 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell element and a solar cell module are disclosed. The solar cell element includes a polycrystalline silicon substrate and an aluminum oxide layer on the p-type semiconductor layer. The polycrystalline silicon substrate includes a p-type semiconductor layer located at the uppermost position. The aluminum oxide layer is primarily amorphous. The solar cell module includes the above-mentioned solar cell element.

摘要翻译： 公开了太阳能电池元件和太阳能电池模块。 太阳能电池元件包括多晶硅基板和p型半导体层上的氧化铝层。 多晶硅衬底包括位于最上位置的p型半导体层。 氧化铝层主要是无定形的。 太阳能电池模块包括上述太阳能电池元件。

公开(公告)号：US20140130860A1

公开(公告)日：2014-05-15

申请号：US14129518

申请日：2012-06-27

申请人： Norikazu Ito ,  Akira Murao ,  Makoto Onodera ,  Takeshi Ito

发明人： Norikazu Ito ,  Akira Murao ,  Makoto Onodera ,  Takeshi Ito

IPC分类号： H01L31/0232

CPC分类号： H01L31/02327 ,  C23C16/403 ,  C23C16/45553 ,  H01L31/02167 ,  H01L31/0547 ,  H01L31/056 ,  H01L31/1868 ,  Y02E10/52 ,  Y02P70/521

摘要： A solar cell element and a method for forming an alumina film are disclosed. The method comprises: preparing a substrate; supplying sources of an aluminum source material that contains aluminum atoms and an oxygen source material that contains oxygen atoms comprising H2O and O3 to the substrate; and forming an alumina film on the substrate.

摘要翻译： 公开了太阳能电池元件和氧化铝膜的形成方法。 该方法包括：制备基材; 将含有铝原子的铝源材料源和含有包含H 2 O和O 3的氧原子的氧源材料供给到所述衬底; 在基板上形成氧化铝膜。

公开(公告)号：US09257548B2

公开(公告)日：2016-02-09

申请号：US13297141

申请日：2011-11-15

申请人： Shinya Takado ,  Norikazu Ito ,  Atsushi Yamaguchi

发明人： Shinya Takado ,  Norikazu Ito ,  Atsushi Yamaguchi

IPC分类号： H01L29/06 ,  H01L29/778 ,  H01L29/417 ,  H01L29/423 ,  H01L29/20 ,  H01L23/00

CPC分类号： H01L21/02458 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L29/045 ,  H01L29/154 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7784 ,  H01L29/7787 ,  H01L2224/06051 ,  H01L2224/451 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A nitride semiconductor element includes a Si substrate; a buffer layer including (a) an AlN layer formed on a primary surface of the Si substrate; and (b) an AlGaN deposit layer formed by laminating multiple AlGaN layers on the AlN layer and having a total thickness ranging from 100 nm to 500 nm; a GaN electron transfer layer formed on the AlGaN deposit layer and having a thickness ranging from 500 nm to 2000 nm provided that the GaN electron transfer layer is thicker than the AlGaN deposit layer; and an AlGaN electron supply layer formed on the GaN electron transfer layer, wherein the AlGaN deposit layer includes an AlGaN layer that is provided closer to the AlN layer and has an Al component that ranges from about 40% to about 60%, and a reference AlGaN layer that has an Al component (%) that is lower than that of the AlGaN layer.

摘要翻译： 氮化物半导体元件包括Si衬底; 缓冲层，包括（a）形成在所述Si衬底的主表面上的AlN层; 和（b）通过在AlN层上层叠多个AlGaN层并且具有100nm至500nm的总厚度而形成的AlGaN沉积层; 形成在AlGaN沉积层上并且具有500nm至2000nm的厚度的GaN电子转移层，条件是GaN电子转移层比AlGaN沉积层厚; 以及形成在GaN电子转移层上的AlGaN电子供给层，其中AlGaN沉积层包括设置在更靠近AlN层并具有约40％至约60％范围内的Al成分的AlGaN层，以及参考 AlGaN层的Al成分（％）低于AlGaN层的Al成分。

公开(公告)号：US09197126B2

公开(公告)日：2015-11-24

申请号：US13258055

申请日：2009-04-01

申请人： Masaki Yamada ,  Takahiro Urakabe ,  Akihiko Iwata ,  Norikazu Ito

发明人： Masaki Yamada ,  Takahiro Urakabe ,  Akihiko Iwata ,  Norikazu Ito

IPC分类号： H02M3/335 ,  H02M1/42

CPC分类号： H02M1/4225 ,  H02M1/4208 ,  Y02B70/126

摘要： In a power converting apparatus which converts AC power into DC power, an inverter circuit including at least one series-connected single-phase inverter is connected in a downstream of a stage in which an AC input is rectified in series therewith. In the downstream stage of the inverter circuit, there are provided a smoothing capacitor connected via a rectifier diode and a short-circuiting switch for bypassing the smoothing capacitor. The short-circuiting switch is set to an ON state only in each of short-circuiting phase ranges of which midpoint matches each of zero-crossing phases and an output of the inverter circuit is controlled by using a current command so that a DC voltage of the smoothing capacitor follows a target voltage and an input power factor is improved.

摘要翻译： 在将AC电力转换为DC电力的电力转换装置中，包括至少一个串联连接的单相逆变器的逆变器电路在与其串联整流的级的下游连接。 在逆变器电路的下游侧，设置有通过整流二极管连接的平滑电容器和用于旁路平滑电容器的短路开关。 短路开关仅在其中点与每个过零相位匹配的短路相位范围中的每一个中被设置为导通状态，并且通过使用电流指令来控制逆变器电路的输出，使得直流电压 平滑电容器跟随目标电压，并且改善输入功率因数。

公开(公告)号：US08884560B2

公开(公告)日：2014-11-11

申请号：US13604892

申请日：2012-09-06

申请人： Norikazu Ito

发明人： Norikazu Ito

IPC分类号： H02P6/14

CPC分类号： H02M5/297 ,  H02M1/088 ,  H02M2001/0048 ,  H03K17/127 ,  H03K17/163 ,  H03K2217/0036 ,  Y02B70/1491

摘要： An inverter device includes a plurality of switching circuits in which first switching elements including Si semiconductors and second switching element including WBG semiconductors having ON resistance smaller than that of the first switching elements and having switching speed higher than that of the first switching elements are connected in parallel. The inverter device includes a converting circuit that converts a direct-current voltage into a desired alternating-current voltage and a driving unit that generates a plurality of driving signals for respectively turning on and off the switching circuits. The inverter device includes, for each of the switching circuits, a gate circuit that, based on the driving signals, turns on the second switching element later than the first switching element and turns off the first switching element later than the second switching element.

摘要翻译： 逆变器装置包括多个开关电路，其中包括Si半导体的第一开关元件和包括具有比第一开关元件的导通电阻小的开关速度的开关速度高于第一开关元件的开关速度的WBG半导体的第二开关元件连接在 平行。 逆变器装置包括将直流电压转换成期望的交流电压的转换电路和产生用于分别导通和关断开关电路的多个驱动信号的驱动单元。 对于每个开关电路，逆变器装置包括基于驱动信号的第二开关元件比第一开关元件晚的导通，并且使第一开关元件比第二开关元件晚的截止的栅极电路。

公开(公告)号：US20120119219A1

公开(公告)日：2012-05-17

申请号：US13297141

申请日：2011-11-15

申请人： Shinya Takado ,  Norikazu Ito ,  Atsushi Yamaguchi

发明人： Shinya Takado ,  Norikazu Ito ,  Atsushi Yamaguchi

IPC分类号： H01L29/20

CPC分类号： H01L21/02458 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02499 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/4952 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L29/045 ,  H01L29/154 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7784 ,  H01L29/7787 ,  H01L2224/06051 ,  H01L2224/451 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49111 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/12032 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device design, and a nitride semiconductor element package with excellent voltage tolerance performance and reliability are provided. On a substrate (41), a buffer layer (44) including an AlN layer (47), a first AlGaN layer (48) (with an average Al component of 50%) and a second AlGaN layer (49) (with an average Al component of 20%) is formed. On the buffer layer (44), an element action layer including a GaN electron transfer layer (45) and an AlGaN electron supply layer (46) is formed. Thus, an HEMT element (3) is constituted.

摘要翻译： 提供能够容纳宽范围厚度的GaN电子转移层，以便允许更大的器件设计自由度的氮化物半导体元件和具有优异的耐压性能和可靠性的氮化物半导体元件封装。 在衬底（41）上，包括AlN层（47），第一AlGaN层（48）（平均Al成分为50％）和第二AlGaN层（49）（平均值）的缓冲层（44） Al成分为20％）。 在缓冲层（44）上，形成包括GaN电子转移层（45）和AlGaN电子供给层（46）的元素作用层。 因此，构成HEMT元件（3）。

公开(公告)号：US08093606B2

公开(公告)日：2012-01-10

申请号：US12085564

申请日：2006-11-28

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Mitsuhiko Sakai

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Mitsuhiko Sakai

IPC分类号： H01L33/00

CPC分类号： H01S5/18358 ,  B82Y20/00 ,  H01L33/105 ,  H01L33/32 ,  H01S5/34333

摘要： There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion (3) provided on a first light reflection layer (2) provided on a substrate (1). The first light reflection layer (2) is formed with laminating a low refractivity layer (21) and a high refractivity layer (22) which have a different refractivity from each other, and the low refractivity layer (21) of the first light reflection layer is formed with a single layer structure of an AlxGa1−xN layer (0≦x≦1), and the high refractivity layer (22) of the first light reflection layer is formed with a multi layer structure formed by laminating alternately an AlyGa1−yN layer (0≦y≦0.5 and y

摘要翻译： 提供一种氮化物半导体发光器件，其具有能够防止由于有源层的质量劣化而引起的反射率降低和降低亮度的光反射层。 氮化物半导体激光器至少包括设置在设置在基板（1）上的第一光反射层（2）上的发光层形成部（3）。 第一光反射层（2）形成为具有彼此不同的折射率的低折射率层（21）和高折射率层（22），并且第一光反射层的低折射率层（21） 形成有Al x Ga 1-x N层（0＆amp; nlE; x＆nlE; 1）的单层结构，并且第一光反射层的高折射率层（22）形成有多层结构，其通过交替层叠AlyGa1-yN 层（0＆amp; nlE; y＆nlE; 0.5和y n1; 1和t

公开(公告)号：US20100035410A1

公开(公告)日：2010-02-11

申请号：US12086418

申请日：2006-12-07

申请人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara ,  Shinichi Tamai

发明人： Masayuki Sonobe ,  Norikazu Ito ,  Kazuaki Tsutsumi ,  Tetsuya Fujiwara ,  Shinichi Tamai

IPC分类号： H01L21/20

CPC分类号： C23C16/303 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： To provide a method for manufacturing InGaN which causes less segregation of In and achieves high crystallinity of an InGaN layer with the proportion of In increased.The method for manufacturing an InGaN layer including growing an InGaN layer under conditions of a growth temperature of 700 to 790° C., a growth rate of 30 to 93 Å/min, and a flow rate of trimethylindium of 0.882×10−5 to 3.53×10−5 mol/min.

摘要翻译： 提供一种制造InGaN的方法，其使In的偏析较少，并且In增加的InGaN层的结晶度达到高结晶度。 InGaN层的制造方法，包括在生长温度为700〜790℃，生长速度为30〜93 /分钟，三甲基铟的流量为0.882×10 -5〜3.53的条件下生长InGaN层 x 10 -5 mol / min。

公开(公告)号：US20090272992A1

公开(公告)日：2009-11-05

申请号：US12223739

申请日：2007-02-08

申请人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Shinichi Tamai

发明人： Kazuaki Tsutsumi ,  Norikazu Ito ,  Masayuki Sonobe ,  Shinichi Tamai

IPC分类号： H01L33/00

CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262

摘要： A semiconductor light emitting device of the present invention includes a substrate (1), an n-GaN layer (2) supported by the substrate (1), a p-GaN layer (7) which is located farther from the substrate (1) than the n-GaN layer (2) is, an active layer (4) formed between the n-GaN layer (2) and the p-GaN layer (7) and containing InGaN, a sublimation preventing layer (5) formed between the active layer (4) and the p-GaN layer (7) and containing InGaN, and an In composition gradient layer (6) sandwiched between the sublimation preventing layer (5) and the p-GaN layer (7) and having such In composition ratio gradient that the In composition ratio decreases in the thickness direction toward the p-GaN layer (7).

摘要翻译： 本发明的半导体发光器件包括：衬底（1），由衬底（1）支撑的n-GaN层（2），位于离衬底（1）更远的p-GaN层（7） 在n-GaN层（2）中，形成在n-GaN层（2）和p-GaN层（7）之间并含有InGaN的有源层（4），形成在该GaN衬底之间的升华防止层（5） 有源层（4）和p-GaN层（7）并且包含InGaN，以及夹在升华防止层（5）和p-GaN层（7）之间的In组成梯度层（6），并且具有这样的In组成 In组成比在厚度方向朝向p-GaN层（7）减小的比率梯度。

公开(公告)号：US20060011231A1

公开(公告)日：2006-01-19

申请号：US10529904

申请日：2003-10-03

申请人： Masashi Ueda ,  Tomoko Takagi ,  Norikazu Ito

发明人： Masashi Ueda ,  Tomoko Takagi ,  Norikazu Ito

IPC分类号： H01L31/00

CPC分类号： C23C16/509 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A plurality of antenna elements, each of which has first and second linear conductors whose first ends are electrically interconnected are formed. The antenna elements are arranged in plane in such a way that the first and second linear conductors are alternated and separated from one another at regular intervals, thereby forming one or more array antennas which are disposed in a chamber. The second ends of the first linear conductors are connected to a high-frequency power supply, and the second ends of the second linear conductors are connected to ground. A plurality of substrates are parallel placed on both sides of the array antennas at distances approximate to the distances between the linear conductors. A film is formed by introducing an ingredient gas into the chamber.

摘要翻译： 形成有多个天线元件，每个天线元件具有第一和第二线性导体，其第一端电互连。 天线元件布置在平面中，使得第一和第二线性导体以规则的间隔彼此交替和分离，从而形成设置在腔室中的一个或多个阵列天线。 第一线性导体的第二端连接到高频电源，第二线性导体的第二端连接到地。 多个基板平行地放置在阵列天线的两侧，距离线性导体之间的距离近似。 通过将成分气体引入室中形成膜。