公开(公告)号：US5503676A

公开(公告)日：1996-04-02

申请号：US385202

申请日：1995-02-08

申请人： Paul K. Shufflebotham ,  Larry D. Hartsough ,  Dean R. Denison

发明人： Paul K. Shufflebotham ,  Larry D. Hartsough ,  Dean R. Denison

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/50 ,  C23C16/511 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  C23C16/00 ,  H01L21/306

CPC分类号： H01J37/32862 ,  Y10S156/916 ,  Y10S438/905

摘要： A method and apparatus for removing extraneous deposits from particle control surfaces in a microwave plasma generating device. An annular magnetron plasma is formed in contact with a particle control surface having a shape which intersects 200-500 G lines of magnetic induction. The magnetron plasma is scanned across particle control surfaces on a horn and chuck by increasing the current to the main coil and/or mirror coil of the apparatus. As the magnetron plasma moves across the particle control surfaces, the plasma reacts with the extraneous deposits and etches the deposits off of the particle control surfaces.

摘要翻译： 一种用于从微波等离子体产生装置中的颗粒控制表面去除外来沉积物的方法和装置。 形成与具有与200〜500G线磁感应相交的形状的粒子控制面接触的环形磁控管等离子体。 通过增加到设备的主线圈和/或镜面线圈的电流，在喇叭和卡盘上的颗粒控制表面上扫描磁控管等离子体。 当磁控管等离子体穿过颗粒控制表面时，等离子体与外来沉积物反应，并蚀刻颗粒控制表面上的沉积物。

公开(公告)号：US5368646A

公开(公告)日：1994-11-29

申请号：US180495

申请日：1994-01-12

申请人： Arthur K. Yasuda ,  Dean R. Denison ,  Randall S. Mundt ,  James E. Tappan

发明人： Arthur K. Yasuda ,  Dean R. Denison ,  Randall S. Mundt ,  James E. Tappan

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/513 ,  H01J37/32 ,  C23C16/50

CPC分类号： H01J37/32623 ,  C23C16/4401 ,  C23C16/513 ,  H01J37/32633

摘要： A method of controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surfaces which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature.Apparatus for controlling deposition quality of line-of-sight and target surfaces in a plasma-enhanced chemical vapor deposition apparatus. The apparatus includes a plasma shield having a line-of-sight surface and a plasma target having a target surface. The line-of-sight surface defines a bore through the plasma shield and is located out of direct contact with a plasma stream, such as oxygen, which passes from a plasma chamber, through the bore, and into a reaction chamber. A semiconductor specimen is mounted on a support in the reaction chamber. The target surface surrounds the specimen. The line-of-sight and target surfaces are maintained at a substantially constant temperature by circulating a fluid medium through fluid passages in the plasma shield and plasma target. The plasma target can include a removable plate having the target surface on one side thereof. The plasma shield can include a removable gas ring for ejecting gas, such as SiH.sub.4, into the bore.

摘要翻译： 一种控制等离子体增强化学气相沉积设备中视线和目标表面的沉积质量的方法。 通过（1）避免膜和下面的表面的不同的热膨胀，（2）控制表面的几何形状以消除在沉积膜中产生应力的边缘的一个或多个，提高了表面上沉积膜的粘附和完整性， 和（3）使用提供沉积膜强粘附的表面的材料。 例如，通过将表面保持在基本恒定的温度例如环境温度，可以避免差分热膨胀。 用于控制等离子体增强化学气相沉积装置中的视线和目标表面的沉积质量的装置。 该装置包括具有视线表面的等离子体屏蔽和具有目标表面的等离子体靶。 视线表面限定穿过等离子体屏蔽的孔，并且位于与等离子体流（例如氧等离子体）直接接触，等离子体流从等离子体室通过孔并进入反应室。 将半导体样品安装在反应室中的载体上。 目标表面围绕着试样。 视线和目标表面通过使流体介质通过等离子体屏蔽和等离子体靶中的流体通道循环而保持在基本上恒定的温度。 等离子体靶可以包括其一侧上具有目标表面的可移除板。 等离子体屏蔽件可以包括用于将诸如SiH 4的气体喷射到孔中的可移除气体环。

公开(公告)号：US06326064B1

公开(公告)日：2001-12-04

申请号：US09277606

申请日：1999-03-29

申请人： Dean R. Denison ,  Mark Weise

发明人： Dean R. Denison ,  Mark Weise

IPC分类号： C23C1640

摘要： A process for reducing intrinsic stress and/or hydrogen content of a SiOx film grown by chemical vapor deposition. The process is applicable to plasma-enhanced and electron cyclotron resonance chemical vapor deposition of silicon dioxide wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

摘要翻译： 一种降低通过化学气相沉积生长的SiOx膜的固有应力和/或氢含量的方法。 该方法适用于二氧化硅的等离子体增强和电子回旋共振化学气相沉积，其中在生长二氧化硅膜的同时引入气相蚀刻剂。 在等离子体沉积工艺期间存在蚀刻剂允许选择性地去除生长膜中的高能二氧化硅分子，从而降低膜内的本征应力。 卤素蚀刻剂的使用进一步减少了作为膜内的羟基存在的氢的量。

公开(公告)号：US5841623A

公开(公告)日：1998-11-24

申请号：US577535

申请日：1995-12-22

申请人： Dean R. Denison ,  David R. Pirkle ,  Alain Harrus

发明人： Dean R. Denison ,  David R. Pirkle ,  Alain Harrus

IPC分类号： H01L21/683 ,  H02N13/00

CPC分类号： H02N13/00 ,  H01L21/6831 ,  H01L21/6833 ,  Y10T279/23

摘要： A chuck for processing a substrate includes a chuck body having a dielectric layer, the dielectric layer including a substrate receiving surface, the substrate receiving surface being at least as large as a substrate to be processed on the chuck. The chuck further includes an electrode buried in the chuck body, the electrode being larger than the substrate receiving surface such that edges of a radio frequency field generated by the electrode are all disposed beyond the substrate receiving surface. A method for depositing a film in a radio frequency biased plasma chemical deposition system is also disclosed.

摘要翻译： 用于处理基板的卡盘包括具有电介质层的卡盘主体，该电介质层包括基板接收表面，该基板接收表面至少与卡盘上要处理的基板一样大。 卡盘还包括埋在卡盘主体中的电极，电极大于基板接收表面，使得由电极产生的射频场的边缘都设置在基板接收表面之外。 还公开了一种在射频偏压等离子体化学沉积系统中沉积膜的方法。

公开(公告)号：US5869149A

公开(公告)日：1999-02-09

申请号：US886148

申请日：1997-06-30

申请人： Dean R. Denison ,  Ajay Saproo ,  David T. Hodul

发明人： Dean R. Denison ,  Ajay Saproo ,  David T. Hodul

IPC分类号： H01L21/31 ,  C23C16/40 ,  C23C16/56 ,  H01L21/316 ,  H01L23/532 ,  B05D3/06

CPC分类号： H01L21/02274 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02131 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/31625 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/3011

摘要： A process of preparing a moisture-resistant fluorine containing SiO.sub.x film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber, depositing a fluorine-containing SiO.sub.x film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300.degree. C., and nitriding an exposed surface of the film with a high density plasma. The silicon and fluorine reactants can be supplied by separate gases such as SiH.sub.4 and SiF.sub.4 or as a single SiF.sub.4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH.sub.4 and SiF.sub.4 can be supplied in a ratio of SiH.sub.4 /(SiH.sub.4 +SiF.sub.4) of no greater than 0.5. The process can provide a film with a fluorine content of 2 to 12 atomic percent and argon can be included in the plasma to assist in gap filling. The plasma can be a high density plasma produced in an ECR, TCP.TM. or ICP reactor and the substrate can be a silicon wafer including one or more metal layers over which the fluorine-containing SiO.sub.x film is deposited. The substrate support can include a gas passage which supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support for maintaining the substrate at a desired temperature. The nitriding step can be carried out in less than 1 minute without applying an rf bias to the substrate. The nitriding gas can be N.sub.2, N.sub.2 O and/or NH.sub.3, the nitrogen ion energy can be 20 to 50 eV, the nitrogen flux can be at least 1 mA/cm.sup.2 and the nitrogen gas flow rate can be at least 50 sccm.

摘要翻译： 制备耐湿含氟SiOx膜的方法包括以下步骤：将含有硅，氧和氟的反应气体供应到处理室中，并在处理室中产生等离子体，将衬底支撑在处理室中的衬底支撑件上， 通过使基板与等离子体接触而使基板上的含氟SiO x膜保持在300℃以上，同时以高密度等离子体对膜的暴露面进行氮化。 硅和氟反应物可以通过单独的气体例如SiH 4和SiF 4或单个SiF 4气体供应，并且氧反应物可以由纯氧气供应。 可以以不大于0.5的SiH 4 /（SiH 4 + SiF 4）的比率供给SiH 4和SiF 4。 该方法可以提供2至12原子％的氟含量的膜，并且可以在等离子体中包括氩以辅助间隙填充。 等离子体可以是在ECR，TCP TM或ICP反应器中产生的高密度等离子体，并且衬底可以是包括一个或多个金属层的硅晶片，在其上沉积含氟SiO x膜。 衬底支撑件可以包括气体通道，其将温度控制气体供应到衬底的相对表面和衬底支撑件之间的空间中，以将衬底保持在期望的温度。 氮化步骤可以在不到1分钟的时间内进行，而不对基板施加rf偏压。 氮化气体可以是N 2，N 2 O和/或NH 3，氮离子能量可以为20〜50eV，氮通量可以为至少1mA / cm 2，氮气流量可以至少为50sccm。

公开(公告)号：US4101874A

公开(公告)日：1978-07-18

申请号：US709947

申请日：1976-07-29

申请人： Dean R. Denison ,  George J. Kren

发明人： Dean R. Denison ,  George J. Kren

IPC分类号： G01F1/075 ,  G08B21/00 ,  G01F1/06

CPC分类号： G01F1/075

摘要： A small diameter transparent visible fluid flow indicator suitable for mounting behind an opening in an instrument panel contains a six-bladed paddle wheel pivoted for rotation by the flow of fluid passing through orifices in the indicator housing. Each of the six blades of the wheel contains a small magnet oppositely polarized from the magnets in the adjacent blades to create alternate magnetic fields that pass through a pickup coil embedded in the housing. The resulting coil voltage is amplified and rectified to control a relay switch. Thus, the liquid flow indicator provides both a visible indication of fluid flow and also controls a switching circuit that may be used as an alarm if the fluid flow stops or varies from some predetermined value.

公开(公告)号：US6042901A

公开(公告)日：2000-03-28

申请号：US604018

申请日：1996-02-20

申请人： Dean R. Denison ,  James Lam

发明人： Dean R. Denison ,  James Lam

IPC分类号： C23C16/40 ,  H01L21/31 ,  H01L21/316 ,  H01L21/02 ,  H05H1/24

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608

摘要： A process of preparing a moisture-resistant fluorine containing silicon oxide film includes steps of supplying reactant gases containing silicon, oxygen and fluorine into a process chamber and generating plasma in the process chamber, supporting a substrate on a substrate support in the process chamber and growing a fluorine-containing silicon oxide film on the substrate by contacting the substrate with the plasma while maintaining temperature of the film above 300.degree. C. The silicon and fluorine reactants can be supplied by separate gases such as SiH.sub.4 and SiF.sub.4 or as a single SiF.sub.4 gas and the oxygen reactant can be supplied by a pure oxygen gas. The SiH.sub.4 and SiF.sub.4 can be supplied in a gas flow ratio of SiH.sub.4 /(SiH.sub.4 +SiF.sub.4) of no greater than 0.5. The process can provide a film with a fluorine content of 2-12 atomic percent and argon can be included in the plasma to assist in gap filling. The plasma can be a high density plasma produced in an ECR, TCP.TM., or ICP reactor and the substrate can be a silicon wafer including one or more metal layers over which the fluorine-containing silicon oxide film is deposited. The substrate support can include a gas passage which supplies a temperature control gas into a space between opposed surfaces of the substrate and the substrate support for maintaining the substrate at a desired temperature.

摘要翻译： 制备耐湿氟氧化硅膜的方法包括以下步骤：将含有硅，氧和氟的反应气体供应到处理室中，并在处理室中产生等离子体，将衬底支撑在处理室中的衬底支撑件上并生长 通过使基板与等离子体接触，同时保持膜的温度在300℃以上，从而在基板上形成含氟氧化硅膜。硅和氟反应物可以通过单独的气体例如SiH 4和SiF 4或单个SiF 4气体 氧反应物可以通过纯氧气供给。 SiH 4和SiF 4可以以不大于0.5的SiH 4 /（SiH 4 + SiF 4）的气体流量比供应。 该方法可以提供2-12原子％的氟含量的膜，并且可以在等离子体中包含氩以辅助间隙填充。 等离子体可以是在ECR，TCP TM或ICP反应器中产生的高密度等离子体，并且衬底可以是包含一个或多个金属层的硅晶片，在其上沉积含氟氧化硅膜。 衬底支撑件可以包括气体通道，其将温度控制气体供应到衬底的相对表面和衬底支撑件之间的空间中，以将衬底保持在期望的温度。

公开(公告)号：US5897711A

公开(公告)日：1999-04-27

申请号：US577519

申请日：1995-12-22

申请人： Dean R. Denison

发明人： Dean R. Denison

IPC分类号： C23C16/40 ,  C23C16/455 ,  C23C16/52 ,  H01L21/316 ,  C23C16/00 ,  H01L21/00

CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31612

摘要： A method and an apparatus for depositing a dielectric film on a substrate in a plasma process chamber wherein the uniformity of the refractive index of the film is improved. The method involves introducing an oxygen reactant and a silicon reactant into the process chamber and generating a plasma, contacting the substrate with the plasma and depositing a SiO.sub.x film thereon. To control uniformity of the refractive index of the film, a second oxygen reactant is injected locally at a position at which it is desired to lower the refractive index. The second oxygen reactant can be O.sub.2 which is injected at the periphery of the substrate. The gas injection apparatus includes a substrate support below the substrate and a deposition shield surrounding the substrate. The shield contains gas injection outlets directed toward the periphery of the substrate for supplying the O.sub.2 to a region above the outer periphery of the substrate.

摘要翻译： 一种用于在等离子体处理室中的衬底上沉积电介质膜的方法和装置，其中改善了膜的折射率的均匀性。 该方法包括将氧反应物和硅反应物引入处理室并产生等离子体，使基板与等离子体接触并在其上沉积SiOx膜。 为了控制膜的折射率的均匀性，在希望降低折射率的位置局部注入第二氧反应物。 第二氧气反应物可以是在基材周边注入的O 2。 气体注入装置包括在衬底下面的衬底支撑件和围绕衬底的沉积屏蔽。 屏蔽罩包含指向基板周边的气体注入口，用于将O2提供到衬底的外周上方的区域。

公开(公告)号：US5750211A

公开(公告)日：1998-05-12

申请号：US106768

申请日：1993-07-16

申请人： Mark Weise ,  Dean R. Denison

发明人： Mark Weise ,  Dean R. Denison

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/50 ,  C23C16/511 ,  H01L21/316 ,  B05D3/06

CPC分类号： C23C16/401 ,  C23C16/44

摘要： A process for reducing intrinsic stress and/or hydrogen content of a SiO.sub.x film grown by ECR chemical vapor deposition, wherein a vapor phase etchant is introduced while growing the silicon dioxide film. The presence of the etchant during the plasma deposition process allows for selective removal of high energy silicon dioxide molecules in the growing film thus reducing intrinsic stress within the film. The use of halogen etchants further reduces the amount of hydrogen present as hydroxyl within the film.

摘要翻译： 一种降低通过ECR化学气相沉积生长的SiO x膜的固有应力和/或氢含量的方法，其中在生长二氧化硅膜的同时引入气相蚀刻剂。 在等离子体沉积工艺期间存在蚀刻剂允许选择性地去除生长膜中的高能二氧化硅分子，从而降低膜内的本征应力。 卤素蚀刻剂的使用进一步减少了作为膜内的羟基存在的氢的量。

公开(公告)号：US5200232A

公开(公告)日：1993-04-06

申请号：US623090

申请日：1990-12-11

申请人： James E. Tappan ,  Arthur K. Yasuda ,  Dean R. Denison ,  Randall S. Mundt

发明人： James E. Tappan ,  Arthur K. Yasuda ,  Dean R. Denison ,  Randall S. Mundt

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/513 ,  H01J37/32

CPC分类号： H01J37/32623 ,  C23C16/4401 ,  C23C16/513 ,  H01J37/32633

摘要： A method of controlling deposition quality of line-of-sight and specimen surrounding surfaces in a plasma-enhanced chemical vapor deposition apparatus. Adhesion and integrity of deposited film on the surfaces is improved by one or more of (1) avoiding differential thermal expansion of the film and the underlying surfaces, (2) controlling geometry of the surfaces to eliminate edges which generate stress in the deposited film, and (3) using material for the surface which provides strong adhesion of the deposited film. For instance, differential thermal expansion can be avoided by maintaining the surfaces at a substantially constant temperature such as ambient temperature.

摘要翻译： 一种控制等离子体增强化学气相沉积设备中视线和样品周围表面的沉积质量的方法。 通过（1）避免膜和下面的表面的不同的热膨胀，（2）控制表面的几何形状以消除在沉积膜中产生应力的边缘的一个或多个，提高了表面上沉积膜的粘附和完整性， 和（3）使用提供沉积膜强粘附性的表面材料。 例如，通过将表面保持在基本恒定的温度例如环境温度，可以避免差分热膨胀。