公开(公告)号：US08119210B2

公开(公告)日：2012-02-21

申请号：US10851561

申请日：2004-05-21

Applicant: Pravin K. Narwankar ,  Gregg Higashi

Inventor： Pravin K. Narwankar ,  Gregg Higashi

IPC: H05H1/24

CPC classification number: H01L21/3141 ,  C23C16/401 ,  H01L21/3143

Abstract: In one embodiment, a method for depositing a capping layer on a dielectric layer in a process chamber is provided which includes depositing the dielectric layer on a substrate surface, depositing a silicon-containing layer by an ALD process, comprising alternately pulsing a silicon precursor and an oxidizing gas into the process chamber, and exposing the silicon-containing layer to a nitridation process. In another embodiment, a method for depositing a silicon-containing capping layer on a dielectric layer in a process chamber by an ALD process is provided which includes flowing a silicon precursor into the process chamber, purging the process chamber with a purge gas, flowing an oxidizing gas comprising water formed by flowing a H2 gas and an oxygen-containing gas through a water vapor generator, and purging the process chamber with the purge gas.

Abstract translation: 在一个实施例中，提供了一种用于在处理室中的电介质层上沉积覆盖层的方法，其包括在基底表面上沉积电介质层，通过ALD工艺沉积含硅层，包括交替地脉冲硅前体和 氧化气体进入处理室，并将含硅层暴露于氮化过程。 在另一个实施例中，提供了一种通过ALD工艺在处理室中的电介质层上沉积含硅覆盖层的方法，其包括使硅前体流入处理室，用吹扫气体吹扫处理室， 包括通过使H 2气体和含氧气体流过水蒸汽发生器而形成的水的氧化气体，以及用吹扫气体吹扫处理室。

公开(公告)号：US20130074771A1

公开(公告)日：2013-03-28

申请号：US13682479

申请日：2012-11-20

Applicant: VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

Inventor： VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

IPC: C23C16/54

CPC classification number: C23C16/545 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/035227 ,  H01L31/075 ,  H01L31/1876 ,  H01L31/206 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract translation: 提供了一种用于在基底上形成复合材料的方法和装置。 复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。 在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。 纤维网被引导通过各种处理室以形成复合材料。 在另一个实施例中，大规模衬底包括离散衬底。 离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。 复合材料可用于形成储能装置和/或光伏器件。

公开(公告)号：US08117987B2

公开(公告)日：2012-02-21

申请号：US12873299

申请日：2010-08-31

Applicant: Dieter Haas ,  Pravin K. Narwankar ,  Randhir P. S. Thakur

Inventor： Dieter Haas ,  Pravin K. Narwankar ,  Randhir P. S. Thakur

IPC: A61D3/00

CPC classification number: C23C16/24 ,  C23C16/54 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods and apparatus for hot wire chemical vapor deposition (HWCVD) are provided herein. In some embodiments, an inline HWCVD tool may include a linear conveyor for moving a substrate through the linear process tool; and a multiplicity of HWCVD sources, the multiplicity of HWCVD sources being positioned parallel to and spaced apart from the linear conveyor and configured to deposit material on the surface of the substrate as the substrate moves along the linear conveyor; wherein the substrate is coated by the multiplicity of HWCVD sources without breaking vacuum. In some embodiments, methods of coating substrates may include depositing a first material from an HWCVD source on a substrate moving through a first deposition chamber; moving the substrate from the first deposition chamber to a second deposition chamber; and depositing a second material from a second HWCVD source on the substrate moving through the second deposition chamber.

Abstract translation: 本文提供了热线化学气相沉积（HWCVD）的方法和装置。 在一些实施例中，在线HWCVD工具可以包括用于通过线性处理工具移动衬底的线性输送机; 和多个HWCVD源，多个HWCVD源被定位成与线性传送器平行并与其间隔开，并且被配置为当衬底沿着线性传送器移动时将材料沉积在衬底的表面上; 其中所述基底被多个HWCVD源涂覆而不破坏真空。 在一些实施例中，涂覆基底的方法可以包括在移动通过第一沉积室的基底上沉积来自HWCVD源的第一材料; 将衬底从第一沉积室移动到第二沉积室; 以及将第二材料从第二HWCVD源沉积在移动通过第二沉积室的衬底上。

公开(公告)号：US07871942B2

公开(公告)日：2011-01-18

申请号：US12057113

申请日：2008-03-27

Applicant: Shreyas S. Kher ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

Inventor： Shreyas S. Kher ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/31645 ,  C23C14/083 ,  C23C16/56 ,  H01L21/3141

Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Abstract translation: 公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。 还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

公开(公告)号：US07658973B2

公开(公告)日：2010-02-09

申请号：US10772893

申请日：2004-02-04

Applicant: Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

Inventor： Pravin K. Narwankar ,  Gary E. Miner ,  Arnaud Lepert

IPC: B05D3/02 ,  C23C16/00 ,  B05D1/40 ,  B05D3/12 ,  H01L21/31 ,  H01L21/469

CPC classification number: H01L21/28185 ,  H01L21/3105 ,  H01L21/3144 ,  H01L29/518 ,  H01L29/66181

Abstract: A method of forming a dielectric film that includes nitrogen. The method includes incorporating nitrogen into a dielectric film using a nitridation gas and a rapid thermal annealing process, wherein an ultra-low pressure of equal to or less than about 10 Torr is used for the rapid thermal annealing process.

Abstract translation: 一种形成包括氮的电介质膜的方法。 该方法包括使用氮化气体和快速热退火工艺将氮合并到电介质膜中，其中使用等于或小于约10Torr的超低压用于快速热退火工艺。

公开(公告)号：US06454860B2

公开(公告)日：2002-09-24

申请号：US09179921

申请日：1998-10-27

Applicant: Craig R. Metzner ,  Turgut Sahin ,  Gregory F. Redinbo ,  Pravin K. Narwankar ,  Patricia M. Liu

Inventor： Craig R. Metzner ,  Turgut Sahin ,  Gregory F. Redinbo ,  Pravin K. Narwankar ,  Patricia M. Liu

IPC: C23C1600

CPC classification number: C23C16/4557 ,  C23C16/407 ,  C23C16/44 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/448 ,  C23C16/4481 ,  C23C16/452 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/54

Abstract: An integrated deposition system is provided which is capable of vaporizing low vapor pressure liquid precursors and delivering this vapor into a processing region for use in the fabrication of advanced integrated circuits. The integrated deposition system is made up of a heated exhaust system, a remote plasma generator, a processing chamber and a liquid delivery system which together provide a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors, anneal those films while also providing commercially viable in-situ cleaning capability.

Abstract translation: 提供一种集成沉积系统，其能够蒸发低蒸气压液体前体并将该蒸气输送到用于制造先进集成电路的处理区域中。 集成沉积系统由加热的排气系统，远程等离子体发生器，处理室和液体输送系统组成，这些系统一起提供了一种商业可行且具有生产价值的系统，用于从低蒸汽压前体沉积大容量电介质材料，退火 同时还提供商业上可行的原位清洁能力。

公开(公告)号：US20130192524A1

公开(公告)日：2013-08-01

申请号：US13755891

申请日：2013-01-31

Applicant: Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

Inventor： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

IPC: H01L21/673

CPC classification number: H01L21/673 ,  C23C16/45546 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67346 ,  H01L21/677

Abstract: A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

Abstract translation: 提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。 可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。 输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。 处理室可以是多室衬底处理系统的一部分。

公开(公告)号：US20110100955A1

公开(公告)日：2011-05-05

申请号：US12885139

申请日：2010-09-17

Applicant: VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

Inventor： VICTOR L. PUSHPARAJ ,  Pravin K. Narwankar ,  Dieter Haas ,  Bipin Thakur ,  Mahesh Arcot ,  Vikas Gujar ,  Omkaram Nalamasu

IPC: C23F1/00 ,  C23C16/22 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00 ,  B82Y40/00

CPC classification number: C23C16/545 ,  B82Y10/00 ,  B82Y40/00 ,  H01L31/035227 ,  H01L31/075 ,  H01L31/1876 ,  H01L31/206 ,  H01L51/0048 ,  H01L51/4213 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521

Abstract: A method and apparatus are provided for formation of a composite material on a substrate. The composite material includes carbon nanotubes and/or nanofibers, and composite intrinsic and doped silicon structures. In one embodiment, the substrates are in the form of an elongated sheet or web of material, and the apparatus includes supply and take-up rolls to support the web prior to and after formation of the composite materials. The web is guided through various processing chambers to form the composite materials. In another embodiment, the large scale substrates comprise discrete substrates. The discrete substrates are supported on a conveyor system or, alternatively, are handled by robots that route the substrates through the processing chambers to form the composite materials on the substrates. The composite materials are useful in the formation of energy storage devices and/or photovoltaic devices.

Abstract translation: 提供了一种用于在基底上形成复合材料的方法和装置。 复合材料包括碳纳米管和/或纳米纤维，以及复合本征和掺杂硅结构。 在一个实施方案中，基材为细长片或材料网的形式，并且该装置包括在形成复合材料之前和之后的供应和卷取辊以支撑幅材。 纤维网被引导通过各种处理室以形成复合材料。 在另一个实施例中，大规模衬底包括离散衬底。 离散的衬底被支撑在输送系统上，或者由机器人来处理，该机器人将衬底通过处理室，以在衬底上形成复合材料。 复合材料可用于形成储能装置和/或光伏器件。

公开(公告)号：US20090246972A1

公开(公告)日：2009-10-01

申请号：US12057113

申请日：2008-03-27

Applicant: SHREYAS S. KHER ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

Inventor： SHREYAS S. KHER ,  Pravin K. Narwankar ,  Khaled Z. Ahmed ,  Yi Ma

IPC: H01L21/31

CPC classification number: H01L21/31645 ,  C23C14/083 ,  C23C16/56 ,  H01L21/3141

Abstract: Processes for making a high K (dielectric constant) film using an ultra-high purity hafnium containing organometallic compound are disclosed. Also described are devices incorporating high K films made with high purity hafnium containing organometallic compounds.

Abstract translation: 公开了使用含有超高纯度铪的有机金属化合物制造高K（介电常数）膜的方法。 还描述了包含用高纯度铪含有有机金属化合物制成的高K膜的装置。

公开(公告)号：US08642376B2

公开(公告)日：2014-02-04

申请号：US13470768

申请日：2012-05-14

Applicant: Sukti Chatterjee ,  Annamalai Lakshmanan ,  Joe Griffith Cruz ,  Pravin K. Narwankar

Inventor： Sukti Chatterjee ,  Annamalai Lakshmanan ,  Joe Griffith Cruz ,  Pravin K. Narwankar

IPC: H01L21/00 ,  H01L21/36 ,  H01L21/20 ,  H01L21/322

CPC classification number: H01L21/0237 ,  C23C16/02 ,  C23C16/24 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262

Abstract: Methods for depositing a material atop a substrate are provided herein. In some embodiments, a method of depositing a material atop a substrate may include exposing a substrate to a silicon containing gas and a reducing gas; increasing a flow rate of the silicon containing gas while decreasing a flow rate of the reducing gas to form a first layer; and depositing a second layer atop the first layer.

Abstract translation: 本文提供了在基板上沉积材料的方法。 在一些实施例中，在衬底上沉积材料的方法可以包括将衬底暴露于含硅气体和还原气体; 增加含硅气体的流量，同时降低还原气体的流速以形成第一层; 以及在所述第一层顶上沉积第二层。