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    Wafer bonding hermetic encapsulation
    3.
    发明授权
    Wafer bonding hermetic encapsulation 有权
    晶圆粘合气密封装

    公开(公告)号：US07622324B2

    公开(公告)日：2009-11-24

    申请号：US10913357

    申请日：2004-08-09

    申请人： Paul M. Enquist ,  Qin-Yi Tong ,  Gaius Gillman Fountain, Jr. ,  Robert Markunas

    发明人： Paul M. Enquist ,  Qin-Yi Tong ,  Gaius Gillman Fountain, Jr. ,  Robert Markunas

    IPC分类号： H01L21/00

    CPC分类号： B81C1/00269 ,  B81C2203/0118 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  H01L2924/01079 ,  H01L2924/00

    摘要： A method for providing encapsulation of an electronic device which obtains an encapsulating member configured to enclose the electronic device, prepares a surface of the encapsulating member for non-adhesive direct bonding, prepares a surface of a device carrier including the electronic device for non-adhesive direct bonding, and bonds the prepared surface of the encapsulating member to the prepared surface of the device carrier to form an encapsulation of the electronic device. As such, an encapsulated electronic device results which includes the device carrier having a first bonding region encompassing the electronic device, includes the encapsulating member having at least one relief preventing contact between the electronic device and the encapsulating member and having a second bonding region bonded to the first bonding region of the device carrier, and includes a non-adhesive direct bond formed between the first and second bonding regions thereby to form an encapsulation of the electronic device. The encapsulated electronic device can be an electronic or optoelectronic device.

    摘要翻译： 一种用于提供电子设备的封装的方法，该电子设备获得构造成封闭电子设备的封装构件，准备用于非粘合剂直接接合的封装构件的表面，准备包括用于非粘合剂的电子设备的设备载体的表面 直接结合，并将封装构件的制备表面粘合到装置载体的制备表面上以形成电子器件的封装。 因此，包括具有包围电子设备的第一接合区域的器件载体的封装的电子器件包括具有至少一个防止接触电子器件与封装元件之间的防止接触的封装元件，并且具有第二接合区域 装置载体的第一结合区域，并且包括在第一和第二接合区域之间形成的非粘合性直接结合，从而形成电子器件的封装。 封装的电子器件可以是电子或光电器件。

    Method of epitaxial-like wafer bonding at low temperature and bonded structure
    7.
    发明授权
    Method of epitaxial-like wafer bonding at low temperature and bonded structure 有权
    低温外延态晶片接合方法及结合结构

    公开(公告)号：US06563133B1

    公开(公告)日：2003-05-13

    申请号：US09635272

    申请日：2000-08-09

    申请人： Qin-Yi Tong

    发明人： Qin-Yi Tong

    IPC分类号： H01L2904

    CPC分类号： H01L21/02052 ,  H01L21/187 ,  H01L21/306 ,  Y10S438/974

    摘要： A process for bonding oxide-free silicon substrate pairs and other substrates at low temperature. This process involves modifying the surface of the silicon wafers to create defect regions, for example by plasma-treating the surface to be bonded with a or boron-containing plasmas such as a B2H6 plasma. The surface defect regions may also be created by ion implantation, preferably using boron. The surfaces may also be amorphized. The treated surfaces are placed together, thus forming an attached pair at room temperature in ambient air. The bonding energy reaches approximately 400 mJ/M2 at room temperature, 900 mJ/M2 at 150° C., and 1800 mJ/M2 at 250° C. The bulk silicon fracture energy of 2500 mJ/m2 was achieved after annealing at 350-400° C. The release of hydrogen from B—H complexes and the subsequent absorption of the hydrogen by the plasma induced modified layers on the bonding surfaces at low temperature is most likely responsible for the enhanced bonding energy.

    摘要翻译： 一种低温下无氧化硅衬底对和其他衬底的焊接工艺。 该方法包括改变硅晶片的表面以产生缺陷区域，例如通过等离子体处理待与诸如B2H6等离子体的含硼等离子体接合的表面。 表面缺陷区域也可以通过离子注入产生，优选使用硼。 表面也可能是非晶化的。 将处理过的表面放置在一起，从而在室温下在环境空气中形成附着的对。 结合能在室温下达到约400mJ / M2，在150℃下达到900mJ / M2，在250℃下达到1800mJ / M2。在350℃退火后实现了2500mJ / m 2的体硅裂解能， 400℃。从BH络合物中释放氢气以及随后通过等离子体在低温下在接合表面上引起改性层吸收氢是很有可能造成增强的结合能。

    Method for the transfer of thin layers monocrystalline material onto a desirable substrate
    8.
    发明授权
    Method for the transfer of thin layers monocrystalline material onto a desirable substrate 有权
    将薄层单晶材料转移到所需衬底上的方法

    公开(公告)号：US6150239A

    公开(公告)日：2000-11-21

    申请号：US163897

    申请日：1998-09-30

    申请人： Ulrich M. Goesele ,  Qin-Yi Tong

    发明人： Ulrich M. Goesele ,  Qin-Yi Tong

    IPC分类号： H01L21/76 ,  H01L21/02 ,  H01L21/20 ,  H01L21/265 ,  H01L21/762 ,  H01L27/12 ,  H01L21/304

    CPC分类号： H01L21/76251 ,  H01L21/76254 ,  Y10S117/915

    摘要： A method for transferring of monocrystalline, thin layers from a first monocrystalline substrate onto a second substrate, with a reduced requirement with respect to the hydrogen dose needed for layer splitting is realized by co-implantation of hydrogen-trap inducing ions with hydrogen ions, by the high temperature implantation of hydrogen, and by their combination, followed by a heat-treatment to weaken the connection between the implanted layer and the rest of the first substrate, then forming a strong bond between the implanted first substrate and the second substrate and finally using another heat-treatment in order to split the monocrystalline thin layer from the rest of the first substrate by the formation, and growth of hydrogen filled microcracks.

    摘要翻译： 通过将氢诱捕离子与氢离子共注入，通过与氢离子共注入来实现将单晶薄层从第一单晶衬底转移到第二衬底上的方法，其中相对于层分裂所需的氢剂量的要求降低 氢的高温注入，并通过它们的组合，随后进行热处理以削弱注入层与第一衬底的其余部分之间的连接，然后在注入的第一衬底和第二衬底之间形成牢固的结合，最后 使用另一种热处理，以便通过形成将单晶薄层与第一衬底的其余部分分离，以及填充氢的微裂纹的生长。