摘要:
A device for cleaning the surface of a molybdenum wire at high temperature, comprises a wire pay-off mechanism, a first wire guiding wheel, a cleaning mechanism, a second wire guiding wheel, and a wire take-up mechanism; wherein the two ends of a furnace body of the cleaning mechanism are provided with an inlet hole and an outlet hole for the molybdenum wire. Electrodes connected to a power supply are provided at the inlet hole and in a central part inside the furnace body. An upper part of the furnace body is provided with a gas outlet and a lower part thereof is provided with a wet hydrogen inlet; a heating section is formed between the electrode located at the inlet hole and the electrode located in the central part, and a cooling section is formed between the electrode located in the central part and the outlet hole.
摘要:
A device for cleaning the surface of a molybdenum wire at high temperature, comprises a wire pay-off mechanism, a first wire guiding wheel, a cleaning mechanism, a second wire guiding wheel, and a wire take-up mechanism; wherein the two ends of a furnace body of the cleaning mechanism are provided with an inlet hole and an outlet hole for the molybdenum wire. Electrodes connected to a power supply are provided at the inlet hole and in a central part inside the furnace body. An upper part of the furnace body is provided with a gas outlet and a lower part thereof is provided with a wet hydrogen inlet; a heating section is formed between the electrode located at the inlet hole and the electrode located in the central part, and a cooling section is formed between the electrode located in the central part and the outlet hole.
摘要:
A semiconductor device includes a lead frame having a die support area and a plurality of inner and outer row leads surrounding the die support area, and a semiconductor die mounted on the die support area and electrically connected to the leads with bond wires. A molding material encapsulates the semiconductor die, the bond wires, and the leads, and defines a package body. The semiconductor device further includes connection bars extending vertically from the leads to a top surface of the package body. The connection bars connect the inner row leads to respective ones of the outer row leads before the molding process is performed.
摘要:
A semiconductor device includes a lead frame having a down bond area, a die attach area and a dam formed between the down bond area and the die attach area. A bottom of the dam is attached on a surface of the lead frame. The dam prevents contamination of the down bond area from die attach material, which may occur during a die attach process.
摘要:
An electrical connection includes a first wire bonded to adjacent bond pads proximate to an edge of a die and a second wire having one end bonded to a die bond pad distal to the die edge and a second end bonded to a lead finger of a lead frame or a connection pad of a substrate. The second wire crosses and is supported by the first wire. The first wire acts as a brace that prevents the second wire from touching the edge of the die. The first wire also prevents the second wire from excessive lateral movement during encapsulation.
摘要:
Quad Flat No-Lead packaged devices are manufactured using two singulation operations with two different saw blades of varying widths with the first singulation operation using a wider saw blade than the second singulation operation. Between singulation operations, the exposed portions of the leads are plated with a solderable metal. By performing the second singulation operation within the first cut made by the first singulation, at least half of the exposed metal of the leads remains plated. Thus, better solder joints may be formed, which allows for simpler visual inspection.
摘要:
A semiconductor package is assembled using first and second lead frames. The first lead frame includes a die flag and the second lead frame includes lead fingers. When the first and second lead frames are mated, the lead fingers surround the die flag. Side surfaces of the die flag are partially etched to form an extended die attach surface on the die flag, and portions of the top surface of each of the lead fingers also are partially etched to form lead finger surfaces that are complementary with the etched side surfaces of the die flag. A semiconductor die is attached to the extended die attach surface and bond pads of the semiconductor die are electrically connected to the lead fingers. An encapsulating material covers the die, electrical connections, and top surfaces of the die flag and lead fingers.
摘要:
A method of making semiconductor devices includes producing an array of first lead frames having rows of first electrical contact elements on respective sides. Sub-assemblies are produced by applying a first molding compound peripherally to provide support between the first electrical contact elements of each of the first lead frames, and singulating the sub-assemblies. An array of assemblies is produced, each of which includes a second lead frame having rows of second electrical contact elements on respective sides, a respective one of the sub-assemblies disposed in the second lead frame with the rows of first electrical contact elements nested adjacent to and inside the rows of second electrical contact elements, and a semiconductor die mounted on the sub-assembly. The assemblies are encapsulated using a second molding compound with the rows of first and second electrical contact elements exposed on adjacent sides of an active face of the respective assembly.
摘要:
A lead frame and a method of making a lead frame for a semiconductor package. The lead frame is formed by stamping a lead frame material into a desire configuration. The stamped lead frame is then affixed to a support material. When assembling a semiconductor package using the lead frame, during saw singuation, the saw does not have to cut through much lead frame material. Thus, the saw blade does not wear quickly.
摘要:
A process for assembling a Chip-On-Lead packaged semiconductor device includes the steps of: mounting and sawing a wafer to provide individual semiconductor dies; performing a first molding operation on a lead frame; depositing epoxy on the lead frame via a screen printing process; attaching one of the singulated dies on the lead frame with the epoxy, where the die attach is done at room temperature; and curing the epoxy in an oven. Throughput improvements may be ascribed to not including a hot die attach process. An optional plasma cleaning step may be performed, which greatly improves wire bonding quality and a second molding quality. In addition, since a first molding operation is performed before the formation of epoxy to avoid the problem of the epoxy hanging in the air, the delamination risk between the epoxy and the die is avoided.