公开(公告)号：US20240282681A1

公开(公告)日：2024-08-22

申请号：US18652417

申请日：2024-05-01

Applicant: Rohm Co., Ltd.

Inventor： Masashi HAYASHIGUCHI ,  Hidetoshi ABE

IPC: H01L23/495 ,  H01L23/29 ,  H01L23/31 ,  H01L23/367 ,  H01L25/07

CPC classification number: H01L23/49562 ,  H01L23/293 ,  H01L23/3142 ,  H01L23/49513 ,  H01L25/072 ,  H01L23/367

Abstract: A semiconductor device includes a semiconductor element and a first terminal electrically connected to the semiconductor element. The first terminal includes a first portion at least a portion of which extends in a first direction and a second portion extending in the first direction. The second portion overlaps with the first portion as viewed in a second direction orthogonal to the first direction. The first terminal may include a third portion connecting the first portion and the second portion. The third portion may protrude beyond the first portion and the second portion as viewed in the first direction. The second section may be spaced apart from the first section.

公开(公告)号：US20240170558A1

公开(公告)日：2024-05-23

申请号：US18420823

申请日：2024-01-24

Applicant: ROHM CO., LTD.

Inventor： Keiji OKUMURA ,  Mineo MIURA ,  Yuki NAKANO ,  Noriaki KAWAMOTO ,  Hidetoshi ABE

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L21/311 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/423 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/66734 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/0465 ,  H01L21/31111 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/512 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66068 ,  H01L29/66719 ,  H01L29/7802 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/7827 ,  H01L29/1608

Abstract: A method for producing a semiconductor power device, includes forming a gate trench from a surface of a semiconductor layer toward an inside thereof. A first insulation film is formed on an inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

公开(公告)号：US20250070051A1

公开(公告)日：2025-02-27

申请号：US18943120

申请日：2024-11-11

Applicant: ROHM CO., LTD.

Inventor： Hidetoshi ABE ,  Makoto IKENAGA ,  Kensei TAKAMOTO

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

公开(公告)号：US20240266261A1

公开(公告)日：2024-08-08

申请号：US18637032

申请日：2024-04-16

Applicant: ROHM CO., LTD.

Inventor： Kenji HAYASHI ,  Takumi KANDA ,  Hidetoshi ABE

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49562 ,  H01L23/3121 ,  H01L24/48 ,  H01L2224/48177

Abstract: A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.

公开(公告)号：US20220148949A1

公开(公告)日：2022-05-12

申请号：US17437715

申请日：2020-05-13

Applicant: ROHM CO., LTD.

Inventor： Kenji HAYASHI ,  Takumi KANDA ,  Hidetoshi ABE

IPC: H01L23/495 ,  H01L23/00 ,  H01L23/31

Abstract: A semiconductor device includes a substrate including a main surface, a semiconductor element mounted on the main surface, a drive pad, and drive wires. The semiconductor element includes a front surface that faces in a same direction as the main surface and a drive electrode formed on the front surface and containing SiC. The drive wires are spaced apart from each other and connect the drive electrode to the drive pad. The drive wires include a first drive wire and a second drive wire configured to be a combination of furthermost ones of the drive wires. The first drive wire and the second drive wire are separated from each other by a greater distance at the drive pad than at the drive electrode as viewed in a first direction that is perpendicular to the main surface of the substrate.

公开(公告)号：US20240030159A1

公开(公告)日：2024-01-25

申请号：US18475946

申请日：2023-09-27

Applicant: ROHM CO., LTD.

Inventor： Hidetoshi ABE ,  Makoto IKENAGA ,  Kensei TAKAMOTO

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

CPC classification number: H01L23/562 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/3114 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

公开(公告)号：US20210305175A1

公开(公告)日：2021-09-30

申请号：US17260499

申请日：2019-07-18

Applicant: ROHM CO., LTD.

Inventor： Hidetoshi ABE ,  Makoto IKENAGA ,  Kensei TAKAMOTO

IPC: H01L23/00 ,  H01L23/31 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the lead frame, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.

公开(公告)号：US20170092743A1

公开(公告)日：2017-03-30

申请号：US15261830

申请日：2016-09-09

Applicant: ROHM CO., LTD.

Inventor： Keiji OKUMURA ,  Mineo MIURA ,  Yuki NAKANO ,  Noriaki KAWAMOTO ,  Hidetoshi ABE

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/311 ,  H01L29/423 ,  H01L21/02

Abstract: A method for producing a semiconductor power device, includes forming a gate trench from a surface of a semiconductor layer toward an inside thereof. A first insulation film is formed on an inner surface of the gate trench. The method also includes removing a part on a bottom surface of the gate trench in the first insulation film. A second insulation film having a dielectric constant higher than SiO2 is formed in such a way as to cover the bottom surface of the gate trench exposed by removing the first insulation film.

公开(公告)号：US20240332367A1

公开(公告)日：2024-10-03

申请号：US18741835

申请日：2024-06-13

Applicant: ROHM CO., LTD.

Inventor： Katsuhisa NAGAO ,  Hidetoshi ABE

IPC: H01L29/16 ,  H01L23/31 ,  H01L23/535 ,  H01L23/60 ,  H01L29/06 ,  H01L29/36 ,  H01L29/423 ,  H01L29/47 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/872

CPC classification number: H01L29/1608 ,  H01L23/535 ,  H01L23/60 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/36 ,  H01L29/4236 ,  H01L29/47 ,  H01L29/51 ,  H01L29/739 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/872 ,  H01L23/3171

Abstract: According to the present invention, a semiconductor device includes a first conductivity type SiC layer, an electrode that is selectively formed upon the SiC layer, and an insulator that is formed upon the SiC layer and that extends to a timing region that is set at an end part of the SiC layer. The insulator includes an electrode lower insulating film that is arranged below the electrode, and an organic insulating layer that is arranged so as to cover the electrode lower insulating film. The length (A) of the interval wherein the organic insulating layer contacts the SiC layer is 40 μm or more, and the lateral direction distance (B) along the electrode lower insulating layer between the electrode and SiC layer is 40 μm or more.

公开(公告)号：US20230096699A1

公开(公告)日：2023-03-30

申请号：US18074399

申请日：2022-12-02

Applicant: ROHM CO., LTD.

Inventor： Hidetoshi ABE ,  Makoto IKENAGA ,  Kensei TAKAMOTO

IPC: H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/495

Abstract: A semiconductor device includes a semiconductor element, a lead frame, a conductive member, a resin composition and a sealing resin. The semiconductor element has an element front surface and an element back surface facing away in a first direction. The semiconductor element is mounted on the lead frame. The conductive member is bonded to the lead frame, electrically connecting the semiconductor element and the lead frame. The resin composition covers a bonded region where the conductive member and lead frame are bonded while exposing part of the element front surface. The sealing resin covers part of the leadframe, the semiconductor element, and the resin composition. The resin composition has a greater bonding strength with the lead frame than a bonding strength between the sealing resin and lead frame and a greater bonding strength with the conductive member than a bonding strength between the sealing resin and conductive member.