利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

70 条记录 (耗时 0.022 秒)

    Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant
    1.
    发明授权
    Method for a short channel CMOS transistor with small overlay capacitance using in-situ doped spacers with a low dielectric constant 有权
    使用具有低介电常数的原位掺杂间隔物的具有小覆盖电容的短沟道CMOS晶体管的方法

    公开(公告)号：US06348385B1

    公开(公告)日：2002-02-19

    申请号：US09726256

    申请日：2000-11-30

    申请人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Chee Tee Chua

    发明人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Chee Tee Chua

    IPC分类号： H01L21336

    CPC分类号： H01L29/66545 ,  H01L21/2255 ,  H01L21/28167 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/66537 ,  H01L29/66553 ,  H01L29/7834

    摘要： The method for a transistor using a replacement gate process that has a doped low-K dielectric spacer that lowers the junction capacitance. A dummy gate is formed over a substrate. Ions are implanted into the substrate using the dummy gate as an implant mask to form source and drain regions. A masking layer is formed on the substrate over the source and drain regions. We remove the dummy gate. Doped low k spacers are formed on the sidewalls of the masking layer. The doped spacers are heated to diffuse dopant into the substrate to form lightly doped drain (LDD regions). We form a high k gate dielectric layer over the masking layer. A gate layer is formed over the high K dielectric layer. The gate layer is chemical-mechanical polished (CMP) to form a gate over the high k dielectric layer and to remove the gate layer over the masking layer.

    摘要翻译： 使用具有降低结电容的掺杂低K电介质间隔物的替代栅极工艺的晶体管的方法。 在基板上形成虚拟栅极。 使用伪栅极作为注入掩模将离子注入到衬底中以形成源区和漏区。 在源极和漏极区上的衬底上形成掩模层。 我们删除虚拟门。 在掩蔽层的侧壁上形成掺杂的低k间隔物。 掺杂的间隔物被加热以将掺杂剂扩散到衬底中以形成轻掺杂漏极（LDD区）。 我们在掩模层上形成一个高k栅介质层。 在高K电介质层上形成栅极层。 栅极层是化学机械抛光（CMP），以在高k电介质层上形成栅极，并且去除掩模层上的栅极层。

    Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique
    2.
    发明授权
    Method to eliminate top metal corner shaping during bottom metal patterning for MIM capacitors via plasma ashing and hard masking technique 有权
    用于通过等离子体灰化和硬掩蔽技术消除MIM电容器底金属图案化期间的顶部金属角成形的方法

    公开(公告)号：US06319767B1

    公开(公告)日：2001-11-20

    申请号：US09798639

    申请日：2001-03-05

    申请人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Yeow Kheng Lim

    发明人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Yeow Kheng Lim

    IPC分类号： H01L218242

    CPC分类号： H01L28/60 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139

    摘要： A method for fabricating a metal-insulator-metal capacitor wherein top metal corner shaping during patterning is eliminated is described. An insulating layer is provided overlying a semiconductor substrate. A composite metal stack is formed comprising a first metal layer overlying the insulating layer, a capacitor dielectric layer overlying the first metal layer, a second metal layer overlying the capacitor dielectric layer, and a hard mask layer overlying the second metal layer. A first photoresist mask is formed overlying the hard mask layer. The composite metal stack is patterned using the first photoresist mask as an etching mask whereby the patterned first metal layer forms a bottom electrode of the capacitor. A portion of the first photoresist mask is removed by plasma ashing to form a second photoresist mask narrower than the first photoresist mask. The hard mask layer is patterned using the second photoresist mask as an etching mask. The second metal layer is patterned using the hard mask layer as an etching mask whereby the second metal layer forms a top electrode of the capacitor to complete fabrication of a metal-insulator-metal capacitor.

    摘要翻译： 描述了一种用于制造金属 - 绝缘体 - 金属电容器的方法，其中消除了图案化期间的顶部金属角成形。 绝缘层设置在半导体衬底上。 形成复合金属堆叠，其包括覆盖绝缘层的第一金属层，覆盖第一金属层的电容器电介质层，覆盖电容器电介质层的第二金属层和覆盖第二金属层的硬掩模层。 第一光致抗蚀剂掩模形成在硬掩模层上。 使用第一光致抗蚀剂掩模将复合金属堆叠图案化为蚀刻掩模，由此图案化的第一金属层形成电容器的底部电极。 通过等离子体灰化除去第一光致抗蚀剂掩模的一部分，以形成比第一光致抗蚀剂掩模窄的第二光刻胶掩模。 使用第二光致抗蚀剂掩模将硬掩模层图案化为蚀刻掩模。 使用硬掩模层作为蚀刻掩模对第二金属层进行构图，由此第二金属层形成电容器的顶部电极，以完成金属 - 绝缘体 - 金属电容器的制造。

    Simplified method to reduce or eliminate STI oxide divots
    3.
    发明授权
    Simplified method to reduce or eliminate STI oxide divots 失效
    简化方法来减少或消除STI氧化层

    公开(公告)号：US06432797B1

    公开(公告)日：2002-08-13

    申请号：US09768487

    申请日：2001-01-25

    申请人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Yeow Kheng Lim

    发明人： Randall Cher Liang Cha ,  Tae Jong Lee ,  Alex See ,  Lap Chan ,  Yeow Kheng Lim

    IPC分类号： H01L2176

    CPC分类号： H01L21/76237 ,  H01L21/31053 ,  H01L21/31055

    摘要： A method for forming shallow trench isolation wherein oxide divots at the edge of the isolation and active regions are reduced or eliminated is described. A trench is etched into a semiconductor substrate. An oxide layer is deposited overlying the semiconductor substrate and filling the trench. Nitrogen atoms are implanted into the oxide layer overlying the trench. The substrate is annealed whereby a layer of nitrogen-rich oxide is formed at the surface of the oxide layer overlying the trench. The oxide layer is planarized to the semiconductor substrate wherein the nitrogen-rich oxide layer is planarized more slowly than the oxide layer resulting in a portion of the oxide layer remaining overlying the trench after the oxide layer overlying the semiconductor substrate has been removed wherein the portion of the oxide layer remaining provides a smooth transition between the shallow trench isolation and the active areas completing the formation of shallow trench isolation in the fabrication of an integrated circuit device.

    摘要翻译： 描述了形成浅沟槽隔离的方法，其中在隔离和有源区的边缘处的氧化物凹陷被减少或消除。 将沟槽蚀刻到半导体衬底中。 沉积在半导体衬底上并填充沟槽的氧化物层。 将氮原子注入到覆盖沟槽的氧化物层中。 将衬底退火，由此在覆盖沟槽的氧化物层的表面上形成一层富氮氧化物。 氧化物层平坦化到半导体衬底，其中富氧氧化物层平坦化比氧化物层缓慢，导致一部分氧化物层保留在沟槽上方，在氧化物层覆盖半导体衬底之后，其中部分 剩余的氧化物层在浅沟槽隔离和有源区域之间提供平滑的过渡，从而在集成电路器件的制造中完成浅沟槽隔离的形成。

    Versatile copper-wiring layout design with low-k dielectric integration
    4.
    发明授权
    Versatile copper-wiring layout design with low-k dielectric integration 失效
    多功能铜线布局设计，低k电介质集成

    公开(公告)号：US06355563B1

    公开(公告)日：2002-03-12

    申请号：US09798652

    申请日：2001-03-05

    申请人： Randall Cher Liang Cha ,  Alex See ,  Yeow Kheng Lim ,  Tae Jong Lee ,  Lap Chan

    发明人： Randall Cher Liang Cha ,  Alex See ,  Yeow Kheng Lim ,  Tae Jong Lee ,  Lap Chan

    IPC分类号： H01L2144

    CPC分类号： H01L21/76802 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76832

    摘要： A method to integrate low dielectric constant dielectric materials with copper metallization is described. A metal line is provided overlying a semiconductor substrate and having a nitride capping layer thereover. A polysilicon layer is deposited over the nitride layer and patterned to form dummy vias. A dielectric liner layer is conformally deposited overlying the nitride layer and dummy vias. A dielectric layer having a low dielectric constant is spun-on overlying the liner layer and covering the dummy vias. The dielectric layer is polished down whereby the dummy vias are exposed. Thereafter, the dielectric layer is cured whereby a cross-linked surface layer is formed. The dummy vias are removed thereby exposing a portion of the nitride layer within the via openings. The exposed nitride layer is removed. The via openings are filled with a copper layer which is planarized to complete copper metallization in the fabrication of an integrated circuit device.

    摘要翻译： 描述了一种将低介电常数电介质材料与铜金属化相结合的方法。 金属线设置在半导体衬底上并且在其上具有氮化物覆盖层。 多晶硅层沉积在氮化物层上并被图案化以形成虚拟通孔。 电介质衬垫层共形沉积在氮化物层和虚拟通孔之上。 将具有低介电常数的介电层旋涂在衬层上并覆盖虚拟通孔。 抛光电介质层，从而暴露虚拟通孔。 此后，电介质层被固化，由此形成交联表面层。 去除虚设通孔，从而将通孔的一部分氮化物层露出。 去除暴露的氮化物层。 通孔开口填充有铜层，该铜层在集成电路器件的制造中被平坦化以完成铜金属化。

    Method for fabricating complementary silicon on insulator devices using wafer bonding
    8.
    发明授权
    Method for fabricating complementary silicon on insulator devices using wafer bonding 失效
    使用晶片接合制造绝缘体上互补硅的方法

    公开(公告)号：US06468880B1

    公开(公告)日：2002-10-22

    申请号：US09805954

    申请日：2001-03-15

    申请人： Yeow Kheng Lim ,  Randall Cher Liang Cha ,  Alex See ,  Tae Jong Lee ,  Wang Ling Goh

    发明人： Yeow Kheng Lim ,  Randall Cher Liang Cha ,  Alex See ,  Tae Jong Lee ,  Wang Ling Goh

    IPC分类号： H01L2130

    CPC分类号： H01L21/76264 ,  H01L21/76283 ,  H01L21/84 ,  Y10S438/977

    摘要： A method to form a silicon on insulator (SOI) device using wafer bonding. A first substrate is provided having an insulating layer over a first side. A second substrate is provided having first isolation regions (e.g., STI) that fill first trenches in the second substrate. Next, we bond the first and second substrate together by bonding the insulating layer to the first isolation regions and the second substrate. Then, a stop layer is formed over the second side of the second substrate. The stop layer and the second side of the second substrate are patterned to form second trenches in the second substrate. The second trenches have sidewalls at least partially defined by the isolation regions and the second trenches expose the second insulating layer. The second trenches define first active regions over the first isolation regions (STI) and define second active regions over the insulating layer. Next, the second trenches are filled with an insulator material to from second isolation regions. Next, the stop layer is removed. Lastly, devices are formed in and on the active regions.

    摘要翻译： 一种使用晶片接合形成绝缘体上硅（SOI）器件的方法。 提供第一基板，其在第一侧上具有绝缘层。 提供了第二衬底，其具有填充第二衬底中的第一沟槽的第一隔离区域（例如STI）。 接下来，通过将绝缘层粘合到第一隔离区域和第二基板上，将第一和第二基板结合在一起。 然后，在第二基板的第二侧上形成止挡层。 图案化第二基板的阻挡层和第二侧，以在第二基板中形成第二沟槽。 第二沟槽具有由隔离区域至少部分地限定的侧壁，并且第二沟槽露出第二绝缘层。 第二沟槽限定第一隔离区域（STI）上的第一有源区，并在绝缘层上限定第二有源区。 接下来，第二沟槽用绝缘体材料填充到第二隔离区域。 接下来，停止层被去除。 最后，在活动区域​​中形成器件。

    Technique to achieve thick silicide film for ultra-shallow junctions
    9.
    发明授权
    Technique to achieve thick silicide film for ultra-shallow junctions 失效
    实现超浅结的厚硅化物薄膜技术

    公开(公告)号：US06878623B2

    公开(公告)日：2005-04-12

    申请号：US10457885

    申请日：2003-06-09

    申请人： Cheng Cheh Tan ,  Randall Cher Liang Cha ,  Alex See ,  Lap Chan

    发明人： Cheng Cheh Tan ,  Randall Cher Liang Cha ,  Alex See ,  Lap Chan

    IPC分类号： H01L21/336 ,  H01L21/44

    CPC分类号： H01L29/66507 ,  H01L29/41783 ,  H01L29/665 ,  H01L29/6656

    摘要： A gate structure having associated (LDD) regions and source and drain is formed as is conventional. A first oxide spacer, for example, is formed along the sidewalls of the gate structure. A layer of metal such as titanium is then deposited over the surface of the gate structure. Second sidewall spacers are formed covering the metal over the first sidewall spacer and covering the metal over isolation regions. A layer of polysilicon is deposited over the surface of the gate structure. A rapid thermal annealing (RTA) is performed causing the metal to react with both the silicon in the junction below the metal and the polysilicon above the metal forming a metal silicide. Metal along the sidewalls between the first and second sidewall spacers and over the isolation regions does not react and is etched away. By providing an additional source of silicon in the polysilicon layer above the metal, a thicker silicide is achieved.

    摘要翻译： 具有相关联（LDD）区域和源极和漏极的栅极结构如常规形成。 例如，沿着栅极结构的侧壁形成第一氧化物间隔物。 然后在栅极结构的表面上沉积诸如钛的金属层。 形成第二侧壁间隔物，覆盖第一侧壁间隔物上的金属，并将金属覆盖在隔离区上。 在栅极结构的表面上沉积多晶硅层。 进行快速热退火（RTA），使得金属与金属之下的结中的硅和形成金属硅化物的金属上方的多晶硅反应。 沿着第一和第二侧壁间隔物之间​​的侧壁以及隔离区域上的金属不会反应并被蚀刻掉。 通过在金属上方的多晶硅层中提供附加的硅源，可获得更厚的硅化物。