公开(公告)号：US10249589B2

公开(公告)日：2019-04-02

申请号：US15582277

申请日：2017-04-28

Applicant: Renesas Electronics Corporation

Inventor： Akira Yajima ,  Yoshiaki Yamada

IPC: H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/525 ,  H01L21/56 ,  H01L23/532 ,  H01L21/311 ,  H01L21/321

Abstract: The semiconductor device includes: a semiconductor substrate; a conductor layer formed over the semiconductor substrate and having an upper surface and a lower surface; a conductive pillar formed on the upper surface of the conductor layer and having an upper surface, a lower surface, and a sidewall; a protection film covering the upper surface of the conductor layer and having an opening which exposes the upper surface and the sidewall of the conductive pillar; and a protection film covering the sidewall of the conductive pillar. Then, in plan view, the opening of the protection film is wider than the upper surface of the conductive pillar and exposes an entire region of an upper surface of the conductive pillar.

公开(公告)号：US20170373031A1

公开(公告)日：2017-12-28

申请号：US15582277

申请日：2017-04-28

Applicant: Renesas Electronics Corporation

Inventor： Akira YAJIMA ,  Yoshiaki Yamada

IPC: H01L23/00

CPC classification number: H01L24/13 ,  H01L21/311 ,  H01L21/321 ,  H01L21/56 ,  H01L23/293 ,  H01L23/3157 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/53295 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02311 ,  H01L2224/02331 ,  H01L2224/02333 ,  H01L2224/02377 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05567 ,  H01L2224/06135 ,  H01L2224/10145 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1182 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13163 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13686 ,  H01L2224/1369 ,  H01L2224/16112 ,  H01L2224/16237 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/81191 ,  H01L2224/81411 ,  H01L2224/81815 ,  H01L2924/3512 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/01014 ,  H01L2924/00014 ,  H01L2924/04941 ,  H01L2924/01047 ,  H01L2924/014 ,  H01L2924/053

Abstract: The semiconductor device includes: a semiconductor substrate; a conductor layer formed over the semiconductor substrate and having an upper surface and a lower surface; a conductive pillar formed on the upper surface of the conductor layer and having an upper surface, a lower surface, and a sidewall; a protection film covering the upper surface of the conductor layer and having an opening which exposes the upper surface and the sidewall of the conductive pillar; and a protection film covering the sidewall of the conductive pillar. Then, in plan view, the opening of the protection film is wider than the upper surface of the conductive pillar and exposes an entire region of an upper surface of the conductive pillar.

公开(公告)号：US11217670B2

公开(公告)日：2022-01-04

申请号：US16722355

申请日：2019-12-20

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yuji Takahashi ,  Masaki Watanabe ,  Masashi Sahara ,  Kentaro Yamada ,  Masaki Sakashita ,  Shinichi Maeda ,  Yoshiaki Yamada

IPC: H01L29/417 ,  H01L29/732 ,  H01L21/324 ,  H01L29/40 ,  H01L21/02 ,  H01L29/47

Abstract: A characteristic of a semiconductor device having a back electrode including an Au—Sb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the Au—Sb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the Au—Sb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the Au—Sb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.