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1.发明授权
公开(公告)号：US5358826A
公开(公告)日：1994-10-25
申请号：US884285
申请日：1992-05-08
IPC分类号： H01L21/48 , H01L23/13 , H01L23/498 , H01L23/538 , G03F7/00
CPC分类号： H01L23/13 , H01L21/4846 , H01L23/49866 , H01L23/5386 , H01L2924/0002 , Y10S257/915
摘要： A method for simultaneously manufacturing metallized carriers from wafer-shaped substrates is described, wherein such wafer-shaped substrates permit the use of standard IC fabrication apparatus and methods. As a result, very thin and finely dimensioned traces can be deposited. Thin-film manufacturing techniques are used to create the high-density traces on the surface of the chip carriers, thereby permitting direct connections from the IC to the periphery of the carrier without the need for vias. A lid hermetically seals and protects the package. The traces are comprised of a plurality of metals to facilitate bonding, each of the metals homogeneous for a portion of the trace. One metal portion of the trace is of a type compatible with an IC chip placed in the carrier. Another metal portion of the trace is of a type compatible with a trace on a printed circuit board. A metal barrier is interposed between the metals to prevent metal diffusion from one metal to an adjoining portion of another metal.
摘要翻译： 描述了从晶片状基板同时制造金属化载体的方法，其中这种晶片状基板允许使用标准IC制造装置和方法。 因此，可以沉积非常薄且精细尺寸的迹线。 使用薄膜制造技术来在芯片载体的表面上产生高密度迹线，从而允许从IC直接连接到载体的外围，而不需要通孔。 盖子密封并保护包装。 痕迹由多个金属组成以便于粘合，每个金属对于痕迹的一部分是均匀的。 迹线的一个金属部分是与放置在载体中的IC芯片兼容的类型。 迹线的另一金属部分是与印刷电路板上的迹线相兼容的类型。 在金属之间插入金属阻挡层，以防止金属从一种金属扩散到另一种金属的邻接部分。
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2.发明授权
公开(公告)号：US5182420A
公开(公告)日：1993-01-26
申请号：US506729
申请日：1990-04-09
IPC分类号： H01L21/48 , H01L23/13 , H01L23/498 , H01L23/538
CPC分类号： H01L23/13 , H01L21/4846 , H01L23/49866 , H01L23/5386 , H01L2924/0002 , Y10S257/915
摘要： A method for simultaneously manufacturing metallized carriers from wafer-shaped substrates is described, wherein such wafer-shaped substrates permit the use of standard IC fabrication apparatus and methods. As a result, very thin and finely dimensioned traces can be deposited. Thin-film manufacturing techniques are used to create the high-density traces on the surface of the chip carriers, thereby permitting direct connections from the IC to the periphery of the carrier without the need for vias. A lid hermetically seals and protects the package. The traces are comprised of a plurality of metals to facilitate bonding, each of the metals homogeneous for a portion of the trace. One metal portion of the trace is of a type compatible with an IC chip placed in the carrier. Another metal portion of the trace is of a type compatible with a trace on a printed circuit board. A metal barrier is interposed between the metals to prevent metal diffusion from one metal to an adjoining portion of another metal.
摘要翻译： 描述了从晶片状基板同时制造金属化载体的方法，其中这种晶片状基板允许使用标准IC制造装置和方法。 因此，可以沉积非常薄且精细尺寸的迹线。 使用薄膜制造技术来在芯片载体的表面上产生高密度迹线，从而允许从IC直接连接到载体的外围，而不需要通孔。 盖子密封并保护包装。 痕迹由多个金属组成以便于粘合，每个金属对于痕迹的一部分是均匀的。 迹线的一个金属部分是与放置在载体中的IC芯片兼容的类型。 迹线的另一金属部分是与印刷电路板上的迹线相兼容的类型。 在金属之间插入金属阻挡层，以防止金属从一种金属扩散到另一种金属的邻接部分。
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公开(公告)号：USH1153H
公开(公告)日：1993-03-02
申请号：US646834
申请日：1991-01-28
申请人： Melvin C. August , Diane M. Christie , Arthur J. Hebert , Eugene F. Neumann , Richard R. Steitz
发明人： Melvin C. August , Diane M. Christie , Arthur J. Hebert , Eugene F. Neumann , Richard R. Steitz
IPC分类号： H01L23/057 , H01L23/10 , H01L23/498
CPC分类号： H01L23/10 , H01L23/057 , H01L23/4985 , H01L2924/09701 , H01L2924/15153 , H01L2924/15165 , H01L2924/15173 , H01L2924/16152
摘要： A hermetically sealed carrier for integrated circuits has an IC placed on a carrier substrate, and an electrical lead apparatus, comprised of a highly heat resistant substrate with a metallized interconnect pattern deposited thereon, connected to the IC and brought out across and over the edges of the carrier substrate to facilitate electrical connection to a circuit board. A lid is provided which is placed over the IC. A low-melting temperature adhesive means is then placed on the lid-to-carrier interface and is exposed to heat hermetically sealing the IC. A hermetically sealed carrier including a single silicon die which includes both an active region where an integrated circuit may be fabricated and an inactive region is also provided. Electrical leads are electrically interconnected to the IC of the active region and extend to the periphery of the inactive region of the silicon die. A lid and adhesive means is provided for hermetically sealing the IC of the active region.
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公开(公告)号：US5127570A
公开(公告)日：1992-07-07
申请号：US545271
申请日：1990-06-28
申请人： Richard R. Steitz , Melvin C. August , Diane M. Christie , Deanna M. Dowdle , Dean B. Dudley , Stephen E. Nelson , Eugene F. Neumann , Paul E. Schroeder
发明人： Richard R. Steitz , Melvin C. August , Diane M. Christie , Deanna M. Dowdle , Dean B. Dudley , Stephen E. Nelson , Eugene F. Neumann , Paul E. Schroeder
CPC分类号： H01L24/86 , B23K26/0661 , B23K26/382 , B23K26/384 , B23K26/386 , B23K26/40 , B23K26/402 , H01L23/4985 , H05K3/4084 , B23K2201/35 , B23K2203/05 , B23K2203/08 , B23K2203/10 , B23K2203/12 , B23K2203/172 , B23K2203/42 , B23K2203/50 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/3011 , H05K1/118 , H05K2201/0394 , H05K2201/0397 , H05K2203/1184 , H05K3/0032 , H05K3/361 , Y10T29/49133
摘要： A flexible automated bonding apparatus electrically interconnects integrated circuit carriers, printed circuit boards, and other devices. A metallized interconnect pattern is deposited on the surface of the substrate. The metallized interconnects in the pattern span apertures created in the substrate using an excimer laser. Thus, the metallized interconnects can be electrically bonded through the apertures to elements lying underneath the substrate.
摘要翻译： 柔性自动接合装置将集成电路载体，印刷电路板和其它装置电互连。 金属化互连图案沉积在基板的表面上。 图案中的金属化互连使用准分子激光器跨越在衬底中产生的孔。 因此，金属化互连可以通过孔电连接到位于衬底下方的元件。
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