Method of fabricating metallized chip carries from wafer-shaped
substrates
    1.
    发明授权
    Method of fabricating metallized chip carries from wafer-shaped substrates 失效
    金属化芯片的制造方法由晶圆形基板承载

    公开(公告)号:US5358826A

    公开(公告)日:1994-10-25

    申请号:US884285

    申请日:1992-05-08

    摘要: A method for simultaneously manufacturing metallized carriers from wafer-shaped substrates is described, wherein such wafer-shaped substrates permit the use of standard IC fabrication apparatus and methods. As a result, very thin and finely dimensioned traces can be deposited. Thin-film manufacturing techniques are used to create the high-density traces on the surface of the chip carriers, thereby permitting direct connections from the IC to the periphery of the carrier without the need for vias. A lid hermetically seals and protects the package. The traces are comprised of a plurality of metals to facilitate bonding, each of the metals homogeneous for a portion of the trace. One metal portion of the trace is of a type compatible with an IC chip placed in the carrier. Another metal portion of the trace is of a type compatible with a trace on a printed circuit board. A metal barrier is interposed between the metals to prevent metal diffusion from one metal to an adjoining portion of another metal.

    摘要翻译: 描述了从晶片状基板同时制造金属化载体的方法,其中这种晶片状基板允许使用标准IC制造装置和方法。 因此,可以沉积非常薄且精细尺寸的迹线。 使用薄膜制造技术来在芯片载体的表面上产生高密度迹线,从而允许从IC直接连接到载体的外围,而不需要通孔。 盖子密封并保护包装。 痕迹由多个金属组成以便于粘合,每个金属对于痕迹的一部分是均匀的。 迹线的一个金属部分是与放置在载体中的IC芯片兼容的类型。 迹线的另一金属部分是与印刷电路板上的迹线相兼容的类型。 在金属之间插入金属阻挡层,以防止金属从一种金属扩散到另一种金属的邻接部分。

    Method of fabricating metallized chip carriers from wafer-shaped
substrates
    2.
    发明授权
    Method of fabricating metallized chip carriers from wafer-shaped substrates 失效
    从成形衬底制造金属化芯片载体的方法

    公开(公告)号:US5182420A

    公开(公告)日:1993-01-26

    申请号:US506729

    申请日:1990-04-09

    摘要: A method for simultaneously manufacturing metallized carriers from wafer-shaped substrates is described, wherein such wafer-shaped substrates permit the use of standard IC fabrication apparatus and methods. As a result, very thin and finely dimensioned traces can be deposited. Thin-film manufacturing techniques are used to create the high-density traces on the surface of the chip carriers, thereby permitting direct connections from the IC to the periphery of the carrier without the need for vias. A lid hermetically seals and protects the package. The traces are comprised of a plurality of metals to facilitate bonding, each of the metals homogeneous for a portion of the trace. One metal portion of the trace is of a type compatible with an IC chip placed in the carrier. Another metal portion of the trace is of a type compatible with a trace on a printed circuit board. A metal barrier is interposed between the metals to prevent metal diffusion from one metal to an adjoining portion of another metal.

    摘要翻译: 描述了从晶片状基板同时制造金属化载体的方法,其中这种晶片状基板允许使用标准IC制造装置和方法。 因此,可以沉积非常薄且精细尺寸的迹线。 使用薄膜制造技术来在芯片载体的表面上产生高密度迹线,从而允许从IC直接连接到载体的外围,而不需要通孔。 盖子密封并保护包装。 痕迹由多个金属组成以便于粘合,每个金属对于痕迹的一部分是均匀的。 迹线的一个金属部分是与放置在载体中的IC芯片兼容的类型。 迹线的另一金属部分是与印刷电路板上的迹线相兼容的类型。 在金属之间插入金属阻挡层,以防止金属从一种金属扩散到另一种金属的邻接部分。