公开(公告)号：US4699298A

公开(公告)日：1987-10-13

申请号：US815025

申请日：1985-12-30

申请人： Robert W. Grant ,  Joshua P. Waldman

发明人： Robert W. Grant ,  Joshua P. Waldman

IPC分类号： B67D1/08 ,  B67D7/02 ,  B67D7/34 ,  B65D83/00

CPC分类号： B67D7/0294 ,  B67D1/0829 ,  B67D7/344 ,  Y10S285/914

摘要： A bung connection for a rigid container has a bung body which threads into the bung opening, and has a base wall with two or more access openings which are connected to tubes extending to the flowable material in the container. A tube mounting is removably inserted into the bung body and has flow ports which connect with the access ports in the base wall. Flow tubes connect to the tube mounting. The tube mounting and bung body have a coded pattern of interfitting lugs and recesses which prevent full assembly of the tube mounting and bung body if the coding is wrong. A clamp ring secures the tube mounting in the bung body. A shipping plug and liner replace the tube mounting in the bung body for shipping the container to be refilled and then returned for use again.

摘要翻译： 用于刚性容器的接头连接件具有螺纹连接到入口开口中的栓体，并且具有底壁，其具有两个或更多个进入开口，所述入口开口连接到延伸到容器中的可流动材料的管。 管安装件可拆卸地插入到主体中并且具有与底壁中的进入端口连接的流动端口。 流管连接到管安装。 管安装和栓体具有相互配合的凸耳和凹槽的编码图案，如果编码错误，则防止管安装和塞体的完全组装。 夹紧环将管安装在栓体中。 运输插头和衬管更换管体中的管安装件，用于运输要重新填充的容器，然后再次返回使用。

公开(公告)号：US06391804B1

公开(公告)日：2002-05-21

申请号：US09590824

申请日：2000-06-09

申请人： Robert W. Grant ,  Benjamin J. Petrone ,  Ronald F. Klopp ,  Theodore E. Farley ,  Paul D. Mumbauer

发明人： Robert W. Grant ,  Benjamin J. Petrone ,  Ronald F. Klopp ,  Theodore E. Farley ,  Paul D. Mumbauer

IPC分类号： H01L21324

CPC分类号： H01L21/67115 ,  H01L21/67109

摘要： Method and apparatus for uniform direct radiant heating in a rapid thermal processing reactor where uniformity of temperature across the width and breadth of a semiconductor wafer is achieved by placement of a dome-shaped thermal insert in close proximity to a semiconductor wafer in process. Thermal energy is absorbed by the thermal insert from the semiconductor wafer at a high rate where the spacing between the thermal insert and semiconductor wafer is at a minimum and at a gradually reduced rate where the spacing between the thermal insert and semiconductor wafer is gradually increased. A guard ring is also incorporated to negate bottom side reflective thermal energy exposure.

摘要翻译： 在快速热处理反应器中用于均匀直接辐射加热的方法和装置，其中半导体晶片的宽度和宽度上的温度均匀度通过将半圆形热插入件放置在非常接近半导体晶片的过程中来实现。 热能被热插入物从半导体晶片以高速率吸收，其中热插入物和半导体晶片之间的间隔处于最小并且逐渐降低的速率，其中热插入物和半导体晶片之间的间隔逐渐增加。 还结合了保护环以抵消底部反射热能暴露。

公开(公告)号：US5017236A

公开(公告)日：1991-05-21

申请号：US396116

申请日：1989-08-21

申请人： Sherman U. Moxness ,  Robert W. Grant

发明人： Sherman U. Moxness ,  Robert W. Grant

IPC分类号： B08B3/12 ,  H01L21/00

CPC分类号： H01L21/67023 ,  B08B3/12 ,  Y10S134/902

摘要： A single substrate high frequency sonic processing module uses a substrate chamber dimensionally sized to the substrate for immersing the substrate in processing solution. Sonic wave permeable membranes form two ends of the substrate chamber along a sonic wave path therethrough. A sonic wave generated by a transducer external to the substrate chamber, travels through sonic wave conducting liquid in contact with the first membrane, external to the substrate chamber. The liquid is shaped by a sonic wave guide of continuously diminishing cross sectional area along the sonic wave path therethrough, thus intensifying and concentrating the sonic wave entering the substrate chamber. The sonic wave passes through the second membrane to a sonic absorbing and dissipating ante chamber. A method for sonic processing of substrates is disclosed. The individual sonic processing modules are combined into a single system for simultaneously processing plural substrates. The minimal sized substrate chamber provides effective processing with minimal processing solution, minimizing cost and disposal. The shaped wave guide concentrates and intensifies the sonic wave guide to provide enhanced processing.

摘要翻译： 单个基板高频声波处理模块使用尺寸适合于基板的基板室，将基板浸入处理溶液中。 声波透过膜沿着声波通道从基底腔的两端形成。 由衬底室外部的换能器产生的声波通过与衬底室外部的第一膜接触的声波导电液体传播。 液体由声波引导器形成，声波导体沿着声波通道的横截面积不断减小，从而增强和集中进入基底腔室的声波。 声波通过第二个膜通过声波吸收和消散的前室。 公开了一种用于基底的声处理的方法。 单独的声处理模块被组合成单个系统以同时处理多个基板。 最小尺寸的基板腔室提供有效的处理，最少的处理解决方案，最大限度地降低成本和 成形波导集中和强化声波引导，以提供增强的处理。

公开(公告)号：US4815630A

公开(公告)日：1989-03-28

申请号：US160650

申请日：1988-02-26

申请人： William M. Jenson ,  Robert W. Grant

发明人： William M. Jenson ,  Robert W. Grant

IPC分类号： B65D88/42 ,  B01J3/03 ,  B01J19/00 ,  B01J19/02 ,  B32B25/20 ,  F16J13/02 ,  B65D83/00

CPC分类号： F16J13/02 ,  B01J19/0053 ,  B01J19/0073 ,  B01J19/02 ,  B01J3/03 ,  B32B25/20 ,  B01J2219/00132 ,  B01J2219/00153 ,  B01J2219/00155 ,  B01J2219/0245 ,  B01J2219/0286

摘要： A cover for a fluid processing chamber is formed of a resilient, heat and chemical resistant laminate of at least three layers. The first layer is a Teflon sheath, the second layer is a blanket heater, and the third layer is a plurality of thin sheets of silicone rubber. The laminate is formed by vacuum formation of the Teflon sheath onto the blanket heater which is supported by the silicone rubber. The opening to the chamber is formed with a rigid lip. The laminate is contained in a stainless steel housing which has an opening therein sized to encompass the perimeter of the chamber lip. Pressure on the cover housing achieves a fluid tight seal with the chamber. No fluid seeps between the cover and the lip even when processing requiring vigorous fluid agitation is carried out in the sealed chamber.

公开(公告)号：US08529746B2

公开(公告)日：2013-09-10

申请号：US13018586

申请日：2011-02-01

申请人： Robert W. Grant ,  Matthew Sweetland

发明人： Robert W. Grant ,  Matthew Sweetland

IPC分类号： H01M4/139 ,  C25D9/02

CPC分类号： H01M4/366 ,  C09D5/24 ,  C09D179/02 ,  C25D3/42 ,  C25D5/40 ,  C25D5/44 ,  C25D9/02 ,  C25D11/00 ,  C25D13/12 ,  C25F3/04 ,  H01G9/0029 ,  H01G9/042 ,  H01G11/24 ,  H01G11/48 ,  H01G11/52 ,  H01G11/86 ,  H01M2/1653 ,  H01M4/0452 ,  H01M4/0461 ,  H01M4/0466 ,  H01M4/134 ,  H01M4/137 ,  H01M4/1395 ,  H01M4/1399 ,  H01M10/052 ,  H01M10/0525 ,  Y02E60/13

摘要： This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.

摘要翻译： 该方法能够在能量存储组件中使用纳米线或纳米纹理形式的聚苯胺和其它导电聚合物。 在连续电化学合成，干燥，溶剂应用和物理组装过程中，这些非常高的表面积材料的微妙性质得以保留。 本发明还涉及一种负极，其由蚀刻的锂化铝组成，其比常规碳基锂离子负极更安全和更轻。 本发明提供了用于制造负极和正极以及包含它们的储能装置的改进方法。 本发明在有机溶剂和电解质溶液中提供足够的稳定性，其中现有技术的方法通常失效。 本发明进一步提供重复充电和放电期间的稳定性。 本发明还提供了用于能量存储装置中的用于新颖的微结构保护支撑膜。

公开(公告)号：US20110195293A1

公开(公告)日：2011-08-11

申请号：US13018586

申请日：2011-02-01

申请人： Robert W. Grant ,  Matthew Sweetland

发明人： Robert W. Grant ,  Matthew Sweetland

IPC分类号： H01M2/18 ,  H01M4/60 ,  B05D5/12 ,  B05D3/14 ,  B05D3/04 ,  B05D3/02 ,  B05D3/00 ,  H01G9/035 ,  B82Y99/00

CPC分类号： H01M4/366 ,  C09D5/24 ,  C09D179/02 ,  C25D3/42 ,  C25D5/40 ,  C25D5/44 ,  C25D9/02 ,  C25D11/00 ,  C25D13/12 ,  C25F3/04 ,  H01G9/0029 ,  H01G9/042 ,  H01G11/24 ,  H01G11/48 ,  H01G11/52 ,  H01G11/86 ,  H01M2/1653 ,  H01M4/0452 ,  H01M4/0461 ,  H01M4/0466 ,  H01M4/134 ,  H01M4/137 ,  H01M4/1395 ,  H01M4/1399 ,  H01M10/052 ,  H01M10/0525 ,  Y02E60/13

摘要： This method enables the use of nanowire or nano-textured forms of Polyaniline and other conductive polymers in energy storage components. The delicate nature of these very high surface area materials are preserved during the continuous electrochemical synthesis, drying, solvent application and physical assembly. The invention also relates to a negative electrode that is comprised of etched, lithiated aluminum that is safer and lighter weight than conventional carbon based lithium-ion negative electrodes. The invention provides for improved methods for making negative and positive electrodes and for energy storage devices containing them. The invention provides sufficient stability in organic solvent and electrolyte solutions, where the prior art processes commonly fail. The invention further provides stability during repetitive charge and discharge. The invention also provides for novel microstructure protecting support membranes to be used in an energy storage device.

摘要翻译： 该方法能够在能量存储组件中使用纳米线或纳米纹理形式的聚苯胺和其它导电聚合物。 在连续电化学合成，干燥，溶剂应用和物理组装过程中，这些非常高的表面积材料的微妙性质得以保留。 本发明还涉及一种负极，其由蚀刻的锂化铝组成，其比常规碳基锂离子负极更安全和更轻。 本发明提供了用于制造负极和正极以及包含它们的储能装置的改进方法。 本发明在有机溶剂和电解质溶液中提供足够的稳定性，其中现有技术的方法通常失效。 本发明进一步提供重复充电和放电期间的稳定性。 本发明还提供了用于能量存储装置中的用于新颖的微结构保护支撑膜。

公开(公告)号：US06258733B1

公开(公告)日：2001-07-10

申请号：US09620751

申请日：2000-07-21

申请人： Narayan Solayappan ,  Robert W. Grant ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

发明人： Narayan Solayappan ,  Robert W. Grant ,  Larry D. McMillan ,  Carlos A. Paz de Araujo

IPC分类号： A01L2131

CPC分类号： C23C18/12 ,  B05D1/007 ,  B05D1/04 ,  C23C16/40 ,  C23C16/448 ,  C23C16/45561 ,  C23C16/45565 ,  C23C18/1216 ,  H01L21/31691 ,  H01L28/55

摘要： A mass flow controller controls the delivery of a precursor to a mist generator. The precursor is misted utilizing a venturi in which a combination of oxygen and nitrogen gas is charged by a corona wire and passes over a precursor-filled throat. The mist is refined using a particle inertial separator, electrically filtered so that it comprises predominantly negative ions, passes into a velocity reduction chamber, and then flows into a deposition chamber through inlet ports in an inlet plate that is both a partition between the chambers and a grounded electrode. The inlet plate is located above and substantially parallel to the plane of the substrate on which the mist is to be deposited. The substrate is positively charged to a voltage of about 5000 volts. There are 440 inlet ports per square inch in an 39 square inch inlet port area of the inlet plate directly above the substrate. The inlet port area is approximately equal to the substrate area. An exhaust port defines a channel about the periphery of an exhaust plane parallel to and below the substrate plane.

摘要翻译： 质量流量控制器控制前体到雾发生器的输送。 使用文丘里管雾化前体，其中氧气和氮气的组合由电晕丝充电并且通过前体填充的喉部。 使用粒子惯性分离器精制雾，使其主要包含负离子，进入减速室，然后通过入口板中的入口板流入沉积室，该入口板是室和室之间的隔板 接地电极。 入口板位于要沉积雾的基底的平面上方并且基本上平行。 基板被充电至约5000伏特的电压。 在基板正上方的入口板的39平方英寸进口端口区域中每平方英寸有440个入口端口。 入口面积大致等于衬底面积。 排气口围绕平行于和低于衬底平面的排气平面的周边限定通道。

公开(公告)号：US20090186194A1

公开(公告)日：2009-07-23

申请号：US12110063

申请日：2008-04-25

申请人： Robert W. Grant

发明人： Robert W. Grant

IPC分类号： B32B3/30 ,  B32B15/04 ,  C23C18/00 ,  B05D3/00 ,  C23C16/54

CPC分类号： C23C18/1295 ,  B81C1/0038 ,  C23C18/08 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/1245 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1291 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76898 ,  H01L28/91 ,  Y10T428/24521 ,  Y10T428/24545

摘要： A process for coating of at least one conformal thin film simultaneously onto the surface of a plurality or batch of substrates having nanoscaled features is provided. The process involves exposing a batch of substrates to a supercritical fluid mixture in a controlled environment, and subsequently heating and cooling the substrate, in the presence of the supercritical fluid mixture, beyond a threshold temperature at which film growth can be enabled to initiate conformal thin film deposition on the surface of the substrate and within the nanoscaled features. The supercritical fluid mixture may be generated in a manner so as to maintain a necessary concentration level of the precursor material to permit sufficient thin film growth within the controlled environment. The supercritical fluid mixture may also be introduced into the controlled environment in a manner which minimizes precipitation or loss of solubility of the precursor material in the mixture. A system of thin film deposition of a batch of substrates is also provided.

摘要翻译： 提供了将至少一个共形薄膜同时涂覆到具有纳米尺度特征的多个或一批基底的表面上的方法。 该方法包括在受控环境中将一批衬底暴露于超临界流体混合物，并且随后在超临界流体混合物的存在下加热和冷却衬底，超过阈值温度，在该阈值温度下，可以使膜生长以启动保形薄 薄膜沉积在基板的表面上并在纳米尺度的特征内。 超临界流体混合物可以以保持前体材料的必要浓度水平以在受控环境内允许足够的薄膜生长的方式产生。 超临界流体混合物也可以以最小化混合物中前体材料的溶解度的沉淀或损失的方式引入受控环境中。 还提供了一批基板的薄膜沉积系统。

公开(公告)号：USRE38760E1

公开(公告)日：2005-07-19

申请号：US08903077

申请日：1997-07-30

申请人： Robert W. Grant ,  Jerzy Ruzyllo ,  Kevin Torek

发明人： Robert W. Grant ,  Jerzy Ruzyllo ,  Kevin Torek

IPC分类号： C30B33/12 ,  B08B6/00 ,  C23F1/12 ,  H01L21/302 ,  H01L21/311 ,  B44C1/21

CPC分类号： H01L21/31116

摘要： Oxides are etched with a halide-containing species and a low molecular weight organic molecule having a high vapor pressure at standard conditions, where etching is performed at preset wafer temperature in an enclosed chamber at a pressure such that all species present in the chamber, including water, are in the gas phase and condensation of species present on the etched surface is controlled. Thus all species involved remain in the gas phase even if trace water vapor appears in the process chamber. Preferably, etching is performed in a cluster dry tool apparatus.

摘要翻译： 在标准条件下用含卤化物的物质和具有高蒸气压的低分子量有机分子蚀刻氧化物，其中在封闭的室中以预设的晶片温度进行蚀刻，其压力使得存在于室中的所有物质包括 水，处于气相中，并且控制存在于蚀刻表面上的物质的冷凝。 因此，即使在处理室中出现痕量水蒸汽，所有涉及的物种都保持在气相中。 优选地，在簇干燥工具装置中进行蚀刻。

公开(公告)号：US06261373B1

公开(公告)日：2001-07-17

申请号：US09352080

申请日：1999-07-14

申请人： Robert W. Grant

发明人： Robert W. Grant

IPC分类号： C23C1600

CPC分类号： C23C16/45557 ,  C23C16/4415

摘要： A method and apparatus for improved metal oxide chemical vapor deposition on a substrate surface where the application boundary layer is reduced and where the uniformity of the application boundary layer is greatly enhanced in a reactor. Primary and secondary sonic or other disturbance sources are introduced to the interior chamber or an oscillating chuck is incorporated to influence the boundary layer thickness and uniformity.

摘要翻译： 一种在衬底表面上改善金属氧化物化学气相沉积的方法和装置，其中应用边界层被减少，并且在反应器中大大增强了应用边界层的均匀性。 一次和二次声波或其他扰动源被引入到室内或者混合摆动卡盘以影响边界层的厚度和均匀性。