公开(公告)号：US07253100B2

公开(公告)日：2007-08-07

申请号：US11164290

申请日：2005-11-17

申请人： Ronald A. DellaGuardia ,  Daniel C. Edelstein ,  Habib Hichri ,  Vincent J. McGahay

发明人： Ronald A. DellaGuardia ,  Daniel C. Edelstein ,  Habib Hichri ,  Vincent J. McGahay

IPC分类号： H10L21/4763

CPC分类号： H01L21/31144 ,  H01L21/02063 ,  H01L21/31133 ,  H01L21/76808

摘要： Methods are disclosed for reducing damage to an ultra-low dielectric constant (ULK) dielectric during removal of a planarizing layer such as a crosslinked polymer. The methods at least partially fill an opening with an at most lightly crosslinked polymer, followed by the planarizing layer. When the at most lightly crosslinked polymer and planarizing layer are removed, the at most lightly crosslinked polymer removal is easier than removal of the planarizing layer, i.e., crosslinked polymer, and does not damage the surrounding dielectric compared to removal chemistries used for the crosslinked polymer.

摘要翻译： 公开了减少在去除平坦化层例如交联聚合物期间对超低介电常数（ULK）电介质的损伤的方法。 该方法至少部分地用至少轻度交联的聚合物填充开口，随后是平坦化层。 当除去至多轻度交联的聚合物和平坦化层时，与用于交联聚合物的去除化学物质相比，去除至多轻度交联的聚合物去除比去除平坦化层即交联聚合物更容易，并且不损坏周围的电介质 。

公开(公告)号：US20080315347A1

公开(公告)日：2008-12-25

申请号：US11767789

申请日：2007-06-25

申请人： Griselda Bonilla ,  Shyng-Tsong Chen ,  Ronald A. DellaGuardia ,  Qinghuang Lin ,  Kelly Malone ,  Shom S. Ponoth ,  Chih-Chao Yang

发明人： Griselda Bonilla ,  Shyng-Tsong Chen ,  Ronald A. DellaGuardia ,  Qinghuang Lin ,  Kelly Malone ,  Shom S. Ponoth ,  Chih-Chao Yang

IPC分类号： H01L21/76 ,  H01L29/00

CPC分类号： H01L21/31695 ,  H01L21/02107 ,  H01L21/02203 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76829 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： Fabricating an integrated circuit using a cap layer that includes one or more gaps or voids. The gaps or voids are provided prior to performing deposition and cure for an inter-layer dielectric (ILD) layer adjoining the cap layer. The gaps or voids reduce and prevent tensile stress buildup by allowing for stress relaxation, hence preventing catastrophic failure of the integrated circuit.

摘要翻译： 使用包括一个或多个间隙或空隙的盖层来制造集成电路。 在对与盖层相邻的层间电介质（ILD）层进行沉积和固化之前，提供间隙或空隙。 间隙或空隙通过允许应力松弛减小并防止拉伸应力累积，从而防止集成电路的灾难性故障。

公开(公告)号：US20080200034A1

公开(公告)日：2008-08-21

申请号：US11677100

申请日：2007-02-21

申请人： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

发明人： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

IPC分类号： H01L21/311

CPC分类号： H01L21/31127 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

摘要翻译： 描述了通过利用照射去除和清洁其中使用的牺牲材料来制造作为集成电路和微电子器件的一部分的互连结构的方法。 利用照射去除牺牲材料的优点包括降低对层间电介质层的损伤，导致增强的器件性能和/或增加的可靠性。

公开(公告)号：US06203965B1

公开(公告)日：2001-03-20

申请号：US09552211

申请日：2000-04-19

申请人： James F. Cameron ,  James Michael Mori ,  George W. Orsula ,  James W. Thackeray ,  Wu-Song Huang ,  Ronald A. DellaGuardia ,  Kuang-Jung Chen ,  Hiroshi Ito ,  Wayne M. Moreau

发明人： James F. Cameron ,  James Michael Mori ,  George W. Orsula ,  James W. Thackeray ,  Wu-Song Huang ,  Ronald A. DellaGuardia ,  Kuang-Jung Chen ,  Hiroshi Ito ,  Wayne M. Moreau

IPC分类号： G03F7004

CPC分类号： G03F7/0045 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/122

摘要： The invention provides new photoresist compositions that contain a resin binder and a blend of photoacid generators. Photoacid generator blends of the invention produce photoacids that differ in acid strength and/or size. A specific composition comprises a terpolymer having units of hydroxystyrene, styrene and t-butyl acrylate with the photoacid generators di-(4-tbutylphenyl)iodonium camphorsulfonate and di-(4-t-butylphenyl)iodonium o-trifluoromethylbenzene sulfonate.

摘要翻译： 本发明提供了含有树脂粘合剂和光致酸发生剂的混合物的新的光致抗蚀剂组合物。 本发明的光酸发生剂共混物产生酸强度和/或尺寸不同的光酸。 特定组合物包含具有羟基苯乙烯，苯乙烯和丙烯酸叔丁酯与光酸产生剂二（4-叔丁基苯基）鏻樟脑磺酸盐和邻 - 三氟甲基苯磺酸二（4-叔丁基苯基）碘的单元的三元共聚物。

公开(公告)号：US06207353B1

公开(公告)日：2001-03-27

申请号：US08987808

申请日：1997-12-10

申请人： Michael D. Armacost ,  Willard E. Conley ,  Tina J. Cotler-Wagner ,  Ronald A. DellaGuardia ,  David M. Dobuzinsky ,  Michael L. Passow ,  William C. Wille

发明人： Michael D. Armacost ,  Willard E. Conley ,  Tina J. Cotler-Wagner ,  Ronald A. DellaGuardia ,  David M. Dobuzinsky ,  Michael L. Passow ,  William C. Wille

IPC分类号： G03F700

CPC分类号： H01L21/0274 ,  G03F7/039 ,  H01L21/31116 ,  H01L21/31144

摘要： A resist formulation minimizes blistering during reactive ion etching processes resulting in an increased amount of polymer by-product deposition. Such processes involve exciting a gaseous fluorocarbon etchant with sufficient energy to form a high-density plasma, and the use of an etchant having a carbon-to-fluorine ratio of at least 0.33. In addition to a conventional photoactive component, resists which minimize blistering under these conditions include a resin binder which is a terpolymer having: (a) units that contain acid-labile groups; (b) units that are free of reactive groups and hydroxyl groups; and (c) units that contribute to aqueous developability of the photoresist. After the photoresist is patterned on the silicon oxide layer and the high-density plasma is formed, the high-density plasma is introduced to the silicon oxide layer to etch at least one opening in the silicon oxide layer. Preferably, the terpolymer is made up of about 70% 4-hydroxystyrene, about 20% styrene, and about 10% t-butylacrylate.

摘要翻译： 抗蚀剂制剂使反应离子蚀刻过程中的起泡最小化，导致聚合物副产物沉积量增加。 这种方法包括以足够的能量激发气态碳氟化合物蚀刻剂以形成高密度等离子体，以及使用碳 - 氟比至少为0.33的蚀刻剂。 除了常规的光活性组分之外，在这些条件下使泡沫最小化的抗蚀剂包括具有以下三元共聚物的树脂粘合剂：（a）含有酸不稳定基团的单元; （b）不含反应性基团和羟基的单元; 和（c）有助于光致抗蚀剂的水性显影性的单元。 在氧化硅层上形成光致抗蚀剂并形成高密度等离子体之后，将高密度等离子体引入到氧化硅层中以蚀刻氧化硅层中的至少一个开口。 优选地，三元共聚物由约70％的4-羟基苯乙烯，约20％的苯乙烯和约10％的丙烯酸叔丁酯组成。

公开(公告)号：US5264328A

公开(公告)日：1993-11-23

申请号：US874286

申请日：1992-04-24

申请人： Ronald A. DellaGuardia ,  John L. Mauer, IV ,  David E. Seeger

发明人： Ronald A. DellaGuardia ,  John L. Mauer, IV ,  David E. Seeger

IPC分类号： G03F7/26 ,  G03F7/30 ,  H01L21/027 ,  H01L21/30 ,  H01L21/66 ,  G03C5/02

CPC分类号： G03F7/30 ,  Y10S430/168

摘要： The present invention provides a method for determining the development endpoint in a X-ray lithographic process. Endpoint is determined by visually observing resist test field patterns through a microscope during the developing step. During the developing, changing test field patterns are formed because test field locations each had been exposed simultaneously to different radiation doses. These different doses are produced when radiation passes through a mask containing a plurality of different size radiation attenuators. When the changing test field pattern matches a known pattern, which is correlated to the desired development endpoint, the workpiece is removed from the developing step.

摘要翻译： 本发明提供了一种用于确定X射线光刻工艺中的显影终点的方法。 通过在显影步骤期间通过显微镜在视觉上观察抗蚀剂测试场图案来确定端点。 在开发期间，形成变化的测试场模式，因为测试场位置各自同时暴露于不同的辐射剂量。 当辐射通过包含多个不同尺寸的辐射衰减器的掩模时，产生这些不同的剂量。 当改变的测试场模式匹配与期望的开发端点相关联的已知模式时，工件从显影步骤中移除。

公开(公告)号：US06268436B1

公开(公告)日：2001-07-31

申请号：US09473225

申请日：1999-12-27

申请人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Quighuang Lin

发明人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Quighuang Lin

IPC分类号： C08L6500

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/107 ,  Y10S430/111

摘要： The present invention is directed to a high-performance irradiation sensitive positive-tone resist and to a method of formulating the same. In one aspect, the polymer resin composition of the present invention comprises a blend of at least two miscible aqueous base soluble polymer resins, wherein one of said aqueous base soluble polymer resins of said blend is partially protected with a high activation energy protecting group and the other aqueous base soluble polymer resin of said blend is partially protected with a low activation energy protecting group. A chemically amplified resist system comprising said polymer resin composition; at least one acid generator; and a solvent is also provided herein.

摘要翻译： 本发明涉及一种高性能照射敏感正性抗蚀剂及其制备方法。 一方面，本发明的聚合物树脂组合物包含至少两种可混溶的水溶性可溶性聚合物树脂的共混物，其中所述共混物的所述水溶性基础可溶性聚合物树脂之一部分地被高活化能保护基团保护，并且 所述共混物的其它水溶性可溶性聚合物树脂部分地被低活化能保护基团保护。 一种包含所述聚合物树脂组合物的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。

公开(公告)号：US6074800A

公开(公告)日：2000-06-13

申请号：US64955

申请日：1998-04-23

申请人： Gregory Breyta ,  Phillip J. Brock ,  Daniel J. Dawson ,  Ronald A. DellaGuardia ,  Charlotte R. DeWan ,  Andrew R. Eckert ,  Hiroshi Ito ,  Premlatha Jagannathan ,  Leo L. Linehan ,  Kathleen H. Martinek ,  Wayne M. Moreau ,  Randolph J. Smith

发明人： Gregory Breyta ,  Phillip J. Brock ,  Daniel J. Dawson ,  Ronald A. DellaGuardia ,  Charlotte R. DeWan ,  Andrew R. Eckert ,  Hiroshi Ito ,  Premlatha Jagannathan ,  Leo L. Linehan ,  Kathleen H. Martinek ,  Wayne M. Moreau ,  Randolph J. Smith

IPC分类号： G03F7/004

CPC分类号： G03F7/0045 ,  Y10S430/115

摘要： Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.

摘要翻译： 提供了几个中等紫外光酸产生剂（PAG），化学放大光抗蚀剂（CAMP）和改进嵌套到隔离线偏压的方法。 类似地，也可以提高照相速度。 与传统的中等紫外线PAG不同，本发明的PAG化合物，抗蚀剂组合物和方法不需要中等紫外线敏化剂。 具体地说，提供了能够承受中等紫外线辐射，特别是I线的发色团的PAG，并且适合用于光速为500mJ / cm 2以下但优选为200mJ / cm 2的化学放大型光致抗蚀剂的PAG， cm2以下。 例如，PAG可以是锍或碘鎓盐，例如蒽基，丁基，甲基锍三氟甲磺酸酯和双（4-叔丁基苯基）碘9,10-二甲氧基蒽磺酸盐。 形成PAG的一部分的发色团可以选自多芳族烃，例如氯仿，芘，荧蒽，蒽，二苯甲酮，噻吨酮，蒽和菲，但优选为蒽。

公开(公告)号：US07598169B2

公开(公告)日：2009-10-06

申请号：US11677100

申请日：2007-02-21

申请人： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

发明人： Qinghuang Lin ,  Elbert E. Huang ,  Christy S. Tyberg ,  Ronald A. DellaGuardia

IPC分类号： H01L21/4763

CPC分类号： H01L21/31127 ,  H01L21/02063 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/76825 ,  H01L21/76826

摘要： A method to fabricate interconnect structures that are part of integrated circuits and microelectronic devices by utilization of an irradiation to remove and clean a sacrificial material used therein is described. The advantages of utilizing the irradiation to remove the sacrificial material include reduced damage to interlayer dielectric layers that result in enhanced device performance and/or increased reliability.

摘要翻译： 描述了通过利用照射去除和清洁其中使用的牺牲材料来制造作为集成电路和微电子器件的一部分的互连结构的方法。 利用照射去除牺牲材料的优点包括降低对层间电介质层的损伤，导致增强的器件性能和/或增加的可靠性。

公开(公告)号：US06303263B1

公开(公告)日：2001-10-16

申请号：US09030568

申请日：1998-02-25

申请人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

发明人： Kuang-Jung Chen ,  Ronald A. DellaGuardia ,  Wu-Song Huang ,  Ahmad D. Katnani ,  Mahmoud M. Khojasteh ,  Qinghuang Lin

IPC分类号： G03F7039

CPC分类号： G03F7/039 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/108 ,  Y10S430/11 ,  Y10S430/111

摘要： The present invention is directed to a high-performance irradiation sensitive resists and to a polymer resin composition useful for making the same. In accordance to the present invention, the polymer resin comprises a dual blocked polymer resins. Specifically, the dual blocked polymer resin comprises at least two different acid labile protecting groups which block some, but not all, of the polar functional groups of the polymer resin. a chemically amplified resist system comprising said dual blocked polymer resin; at least one acid generator; and a solvent is also provided herein.

摘要翻译： 本发明涉及一种高性能的照射敏感抗蚀剂以及可用于制造它的聚合物树脂组合物。 根据本发明，聚合物树脂包含双嵌段聚合物树脂。 具体地，双嵌段聚合物树脂包含至少两种不同的酸不稳定保护基团，其阻挡聚合物树脂的一些但不是全部的极性官能团。 包含所述双嵌段聚合物树脂的化学放大抗蚀剂体系; 至少一种酸发生剂; 并且还提供了溶剂。