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公开(公告)号：US09035297B2
公开(公告)日：2015-05-19
申请号：US13931697
申请日：2013-06-28
发明人： Jaewoo Park , Yoon Gyu Lee , Do-Hyun Kim , Dongjo Kim , Juok Park , Insung Sohn , Sangwon Yoon , Gunhyo Lee , Yongjin Lee , Woo-Seok Jeon
CPC分类号： H01L29/78693 , C23C14/0036 , C23C14/086 , C23C14/3407 , C23C14/3414
摘要： A thin-film transistor includes a metal electrode and a zinc oxide-based barrier film that blocks a material from diffusing out of the metal electrode. The zinc oxide-based barrier film is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based barrier film. A zinc oxide-based sputtering target for deposition of a barrier film of a thin-film transistor is made of zinc oxide doped with indium oxide, the content of the indium oxide ranging, by weight, 1 to 50 percent of the zinc oxide-based sputtering target.
摘要翻译： 薄膜晶体管包括阻挡材料扩散出金属电极的金属电极和氧化锌基阻挡膜。 基于氧化锌的阻挡膜由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌系阻挡膜的1〜50重量％。 用于沉积薄膜晶体管的阻挡膜的氧化锌基溅射靶由掺杂有氧化铟的氧化锌制成，氧化铟的含量为氧化锌基的1〜50重量％ 溅射靶。
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公开(公告)号：US09954006B2
公开(公告)日：2018-04-24
申请号：US15332079
申请日：2016-10-24
发明人： Je-Hun Lee , Ki-Won Kim , Do-Hyun Kim , Woo-Geun Lee , Kap-Soo Yoon
IPC分类号： H01L29/10 , H01L27/12 , H01L29/51 , H01L29/786 , H01L29/45 , H01L23/532 , H01L29/49 , H01L29/66 , H01L21/02
CPC分类号： H01L27/1225 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02554 , H01L21/02565 , H01L23/53238 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L29/45 , H01L29/4908 , H01L29/513 , H01L29/518 , H01L29/66969 , H01L29/78603 , H01L29/7869 , H01L2924/0002 , H01L2924/00
摘要： A TFT array substrate includes a semiconductive oxide layer disposed on an insulating substrate and including a channel portion, a gate electrode overlapping the semiconductive oxide layer, a gate insulating layer interposed between the semiconductive oxide layer and the gate electrode, and a passivation layer disposed on the semiconductive oxide layer and the gate electrode. At least one of the gate insulating layer and the passivation layer includes an oxynitride layer, and the oxynitride layer has a higher concentration of oxygen than that of nitrogen in a location of the oxynitride layer closer to the semiconductive oxide layer.
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公开(公告)号：US09520412B2
公开(公告)日：2016-12-13
申请号：US14798123
申请日：2015-07-13
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L21/00 , H01L21/84 , H01L27/12 , H01L21/4757 , H01L21/441 , H01L21/475 , H01L29/786 , H01L29/66
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
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公开(公告)号：US09340868B2
公开(公告)日：2016-05-17
申请号：US13760758
申请日：2013-02-06
发明人： Jin Ho Hwang , Do-Hyun Kim , Sang Won Shin , Woo Song Kim , Chang-Oh Jeong
CPC分类号： C23C14/352 , C23C14/0063 , C23C14/35 , C23C16/455 , C23C16/45565 , H01J37/3244 , H01J37/32449 , H01J37/32834 , H01J37/3411 , H01J37/3417 , H01J37/3435 , H01J37/3438
摘要： A sputtering device includes: a sputtering target; a substrate supporter facing the sputtering target and upon which a substrate is disposed; an anode mask between the sputtering target and the substrate which is on the substrate supporter; and a gas distribution member between the anode mask and the sputtering target, and including a plurality of gas distribution tubes separated from each other. Each gas distribution tube includes a plurality of discharge holes defined therein and through which gas is discharged to a vacuum chamber configured to receive the sputtering device.
摘要翻译： 溅射装置包括：溅射靶; 面向溅射靶的衬底支撑件，并且衬底被设置在衬底支撑件上; 位于所述基板支撑体上的所述溅射靶和所述基板之间的阳极掩模; 以及位于阳极掩模和溅射靶之间的气体分配构件，并且包括彼此分离的多个气体分配管。 每个气体分配管包括限定在其中的多个排放孔，并且气体被排出到被配置为接收溅射装置的真空室。
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公开(公告)号：US09048326B2
公开(公告)日：2015-06-02
申请号：US13710889
申请日：2012-12-11
发明人： Youngjoo Choi , Gwang-Bum Ko , GwonHeon Ryu , Joongeol Kim , Do-Hyun Kim , Sang-Moon Moh , WooGeun Lee , WonHee Lee
IPC分类号： H01L21/00 , H01L29/786 , H01L29/66 , H01L27/12 , G02F1/1343
CPC分类号： H01L29/78693 , G02F1/134363 , H01L27/1225 , H01L27/124 , H01L27/1259 , H01L27/1288 , H01L29/66969
摘要： A thin film transistor substrate includes a substrate; a gate electrode on the substrate; a semiconductor pattern on the gate electrode; a source electrode on the semiconductor pattern; a drain electrode on the semiconductor pattern and spaced apart from the source electrode; a pixel electrode connected to the drain electrode; and a common electrode partially overlapped with the pixel electrode. The semiconductor pattern is in a same layer of the thin film transistor substrate as the pixel electrode and has an electrical property different from an electrical property of the pixel electrode.
摘要翻译： 薄膜晶体管基板包括基板; 基板上的栅电极; 栅电极上的半导体图案; 半导体图案上的源电极; 半导体图案上的漏电极，与源电极间隔开; 连接到所述漏电极的像素电极; 以及与像素电极部分重叠的公共电极。 半导体图案与像素电极在薄膜晶体管基板的同一层中，具有与像素电极的电特性不同的电特性。
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6.发明授权Liquid crystal display and method of fabricating the same to have TFT's with pixel electrodes integrally extending from one of the source/drain electrodes 失效液晶显示器及其制造方法具有TFT，其中像素电极从源/漏电极之一整体延伸公开(公告)号：US08558984B2
公开(公告)日：2013-10-15
申请号：US13709774
申请日：2012-12-10
发明人： Je-Hun Lee , Do-Hyun Kim , Tae-Sang Kim , Kyung-Seok Son , Chang-Oh Jeong
IPC分类号： G02F1/13
CPC分类号： H01L33/0095 , G02F1/133512 , G02F1/133516 , G02F1/136209 , G02F1/1368 , G02F2001/133397 , G02F2001/136222 , G02F2001/136231 , G02F2001/13685 , H01L27/124 , H01L27/1288 , H01L29/458
摘要： A liquid crystal display (LCD) includes thin film transistors (TFTs) each having spaced apart source/drain electrodes and an oxide-type semiconductive film disposed over and between the source/drain electrodes to define an active layer. Each of the source/drain electrodes includes a portion of a subdivided transparent conductive layer where one subdivision of the transparent conductive layer continues from within its one of the source/drain electrodes to define an optically exposed pixel-electrode that is reliably connected integrally to the one source/drain electrode. Mass production costs can be reduced and production reliability increased because a fewer number of photolithographic masks can be used to form the TFTs.
摘要翻译： 液晶显示器（LCD）包括薄膜晶体管（TFT），每个薄膜晶体管具有间隔开的源/漏电极和设置在源/漏电极之间和之间的氧化物型半导体膜，以限定有源层。 源/漏电极中的每一个包括细分透明导电层的一部分，其中透明导电层的一个细分从其源极/漏极之一内延伸，以限定光学曝光的像素电极，其可靠地与 一个源/漏电极。 由于可以使用较少数量的光刻掩模来形成TFT，所以可以降低批量生产成本并提高生产可靠性。
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7.发明授权公开(公告)号：US09941143B2
公开(公告)日：2018-04-10
申请号：US14687080
申请日：2015-04-15
发明人： Chanwoo Yang , Do-Hyun Kim , Jeongju Park , Junhyun Park , Doohyoung Lee , Xinxing Li
IPC分类号： H01L29/786 , H01L21/467 , H01L29/66 , H01L21/4757 , H01L29/417 , H01L29/45 , H01L27/12
CPC分类号： H01L21/467 , H01L21/47573 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L27/1259 , H01L29/41733 , H01L29/45 , H01L29/66969 , H01L29/78606 , H01L29/7869
摘要： A thin film transistor include a control electrode, a semiconductor layer on the control electrode, an input electrode, at least a portion of the input electrode being on the semiconductor layer, and an output electrode spaced apart from the input electrode, at least a portion of the output electrode being on the semiconductor layer. Each of the input electrode and the output electrode includes a wiring layer including a metal material, a dummy portion on a side part of the wiring layer, the dummy portion including an oxide of the metal material, and a protection layer on the wiring layer, the protection layer overlapping the wiring layer and the dummy portion.
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公开(公告)号：US09837446B2
公开(公告)日：2017-12-05
申请号：US15427696
申请日：2017-02-08
发明人： Do-Hyun Kim , Yoon Ho Khang , Dong-Hoon Lee , Sang Ho Park , Se Hwan Yu , Cheol Kyu Kim , Yong-Su Lee , Sung Haeng Cho , Chong Sup Chang , Dong Jo Kim , Jung Kyu Lee
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1237 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/45 , H01L29/7869
摘要： A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
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公开(公告)号：US09589998B2
公开(公告)日：2017-03-07
申请号：US15010497
申请日：2016-01-29
发明人： Do-Hyun Kim , Yoon Ho Khang , Dong-Hoon Lee , Sang Ho Park , Se Hwan Yu , Cheol Kyu Kim , Yong-Su Lee , Sung Haeng Cho , Chong Sup Chang , Dong Jo Kim , Jung Kyu Lee
IPC分类号： H01L27/12 , H01L29/786 , H01L29/45
CPC分类号： H01L27/124 , H01L27/1225 , H01L27/1237 , H01L27/1262 , H01L27/127 , H01L27/1288 , H01L29/45 , H01L29/7869
摘要： A thin film transistor array panel includes: a gate wiring layer disposed on a substrate; an oxide semiconductor layer disposed on the gate wiring layer; and a data wiring layer disposed on the oxide semiconductor layer, in which the data wiring layer includes a main wiring layer including copper and a capping layer disposed on the main wiring layer and including a copper alloy.
摘要翻译： 薄膜晶体管阵列面板包括：设置在基板上的栅极布线层; 设置在所述栅极布线层上的氧化物半导体层; 以及数据布线层，其设置在所述氧化物半导体层上，所述数据布线层包括包含铜的主布线层和设置在所述主布线层上并包括铜合金的覆盖层。
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公开(公告)号：US09443877B2
公开(公告)日：2016-09-13
申请号：US14799060
申请日：2015-07-14
发明人： Pil-Sang Yun , Ki-Won Kim , Hye-Young Ryu , Woo-Geun Lee , Seung-Ha Choi , Jae-Hyoung Youn , Kyoung-Jae Chung , Young-Wook Lee , Je-Hun Lee , Kap-Soo Yoon , Do-Hyun Kim , Dong-Ju Yang , Young-Joo Choi
IPC分类号： H01L29/04 , H01L31/036 , H01L27/12 , H01L21/4757 , H01L21/441 , H01L21/475 , H01L29/786 , H01L29/66
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
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