SEMICONDUCTOR PACKAGE
    2.
    发明申请

    公开(公告)号:US20210111114A1

    公开(公告)日:2021-04-15

    申请号:US16884212

    申请日:2020-05-27

    IPC分类号: H01L23/498 H01L21/48

    摘要: A semiconductor package includes a semiconductor chip, a redistribution structure below the semiconductor chip, a first insulating layer below the redistribution structure, a pad below the first insulating layer, the pad being in contact with the redistribution structure, and a bump below the pad, wherein a horizontal maximum length of an upper portion of the pad is greater than a horizontal maximum length of a lower portion of the pad.

    SEMICONDUCTOR PACKAGE
    5.
    发明申请

    公开(公告)号:US20220406702A1

    公开(公告)日:2022-12-22

    申请号:US17892215

    申请日:2022-08-22

    IPC分类号: H01L23/498 H01L21/48

    摘要: A semiconductor package includes a semiconductor chip, a redistribution structure below the semiconductor chip, a first insulating layer below the redistribution structure, a pad below the first insulating layer, the pad being in contact with the redistribution structure, and a bump below the pad, wherein a horizontal maximum length of an upper portion of the pad is greater than a horizontal maximum length of a lower portion of the pad.

    SEMICONDUCTOR PACKAGE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20230026972A1

    公开(公告)日:2023-01-26

    申请号:US17700818

    申请日:2022-03-22

    摘要: Disclosed are semiconductor packages and their fabricating methods. The semiconductor package includes a lower structure and an upper redistribution layer. The lower structure includes a first bump layer, a lower redistribution layer, a semiconductor chip, a molding layer, a conductive pillar, and an under pad layer. The upper redistribution layer includes a second bump layer and second redistribution layers. The first redistribution layer includes a lower redistribution pattern including a first line part and a first via part. A width of the first via part increases in a direction toward the first line part from a bottom surface of the first via part. The second redistribution layer includes an upper redistribution pattern including a second line part and the second via part. A width of the second via part increases in a direction toward the second line part from a top surface of the second via part.

    SEMICONDUCTOR PACKAGE
    9.
    发明申请

    公开(公告)号:US20220293501A1

    公开(公告)日:2022-09-15

    申请号:US17453243

    申请日:2021-11-02

    摘要: A semiconductor package includes a redistribution substrate and a semiconductor chip on a top surface of the redistribution substrate. The redistribution substrate includes an insulating layer, and first, second, and third redistribution patterns disposed in the insulating layer. The first to third redistribution patterns are sequentially stacked in an upward direction and are electrically connected to each other. Each of the first to third redistribution patterns includes a wire portion that extends parallel to the top surface of the redistribution substrate. Each of the first and third redistribution patterns further includes a via portion that extends from the wire portion in a direction perpendicular to the top surface of the redistribution substrate. The second redistribution pattern furthers include first fine wire patterns that are less wide than the wire portion of the second redistribution pattern.